公开(公告)号：US20020122758A1

公开(公告)日：2002-09-05

申请号：US09773605

申请日：2001-02-02

Inventor： Tadahiro Ohmi ,  Nobukazu Ikeda ,  Yukio Minami ,  Kouji Kawada ,  Katunori Komehana ,  Teruo Honiden ,  Touru Hirai ,  Akihiro Morimoto ,  Toshirou Nariai ,  Keiji Hirao ,  Masaharu Taguchi ,  Osamu Nakamura

IPC: B01J008/00

CPC classification number: B01J3/006 ,  B01J7/00 ,  B01J12/007 ,  C01B5/00

Abstract: A safe, reduced pressure apparatus for generating water vapor from hydrogen and oxygen and feeding high purity moisture to processes such as semiconductor production. The apparatus eliminates the possibility of the gas igniting by maintaining the internal pressure of the catalytic reactor for generating moisture at a high level while supplying moisture gas from the reactor under reduced pressure. A heat dissipation reactor improvement substantially increases moisture generation without being an enlargement in size by efficient cooling of the reactor alumite-treated fins.

Abstract translation: 一种用于从氢气和氧气产生水蒸汽并将高纯度水分提供给诸如半导体生产的过程的安全的减压装置。 该设备通过保持催化反应器的内部压力以消除气体点燃的可能性，以产生高水平的水分，同时在减压下从反应器中提供湿气。 散热反应器的改进通过有效冷却反应器耐氧化铝处理的翅片而大大地增加了水分产生而不会扩大尺寸。

公开(公告)号：US20010011423A1

公开(公告)日：2001-08-09

申请号：US09782197

申请日：2001-02-14

Inventor： Shigekazu Kato ,  Kouji Nishihata ,  Tsunehiko Tsubone ,  Atsushi Itou

IPC: F26B013/30

CPC classification number: H01L21/67748 ,  B01J3/006 ,  B41J2/36 ,  B41J2/365 ,  C23C14/564 ,  H01L21/67028 ,  H01L21/67167 ,  H01L21/67253 ,  H01L21/67736 ,  Y10S134/902 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S414/14

Abstract: This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dry-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used for dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.

公开(公告)号：US20010010126A1

公开(公告)日：2001-08-02

申请号：US09782193

申请日：2001-02-14

Inventor： Shigekazu Kato ,  Kouji Nishihata ,  Tsunehiko Tsubone ,  Atsushi Itou

IPC: F26B005/04

CPC classification number: H01L21/67748 ,  B01J3/006 ,  B41J2/36 ,  B41J2/365 ,  C23C14/564 ,  H01L21/67028 ,  H01L21/67167 ,  H01L21/67253 ,  H01L21/67736 ,  Y10S134/902 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S414/14

Abstract: This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus When the vacuum processing chambers are dry-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple Furthermore, the dummy substrates used for dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high

Abstract translation: 本发明涉及具有真空处理室的真空处理装置，其内部必须被干燥清洁，以及操作这种装置的方法当真空处理室被干洗时，虚设基板通过 基板输送装置由设置在空气气氛中的虚拟基板存储装置和用于存储待处理基板的存储装置一起，并且通过产生等离子体对真空处理室的内部进行干洗。 在完成干式清洁之后，将虚拟基板返回到虚设基板存储装置。因此，不需要用于清洁目的的任何具体机构，并且能够简化装置的结构此外，用于干洗的虚拟基板和 要处理的基板不共存，可以防止由于灰尘和剩余气体而导致的待处理基板的污染，并且生产成品率可以高

公开(公告)号：US20010008051A1

公开(公告)日：2001-07-19

申请号：US09781295

申请日：2001-02-13

Inventor： Shigekazu Kato ,  Kouji Nishihata ,  Tsunehiko Tsubone ,  Atsushi Itou

IPC: F26B013/30

CPC classification number: H01L21/67748 ,  B01J3/006 ,  B41J2/36 ,  B41J2/365 ,  C23C14/564 ,  H01L21/67028 ,  H01L21/67167 ,  H01L21/67253 ,  H01L21/67736 ,  Y10S134/902 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S414/14

Abstract: This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dry-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used for dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.

公开(公告)号：US20010004807A1

公开(公告)日：2001-06-28

申请号：US09780444

申请日：2001-02-12

Inventor： Shigekazu Kato ,  Kouji Nishihata ,  Tsunehiko Tsubone ,  Atsushi Itou

IPC: F26B013/30

CPC classification number: H01L21/67748 ,  B01J3/006 ,  B41J2/36 ,  B41J2/365 ,  C23C14/564 ,  H01L21/67028 ,  H01L21/67167 ,  H01L21/67253 ,  H01L21/67736 ,  Y10S134/902 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S414/14

Abstract: This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dry-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used for dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.

公开(公告)号：US20010003873A1

公开(公告)日：2001-06-21

申请号：US09781296

申请日：2001-02-13

Inventor： Shigekazu Kato ,  Kouji Nishihata ,  Tsunehiko Tsubone ,  Atsushi Itou

IPC: F26B005/04

CPC classification number: H01L21/67748 ,  B01J3/006 ,  B41J2/36 ,  B41J2/365 ,  C23C14/564 ,  H01L21/67028 ,  H01L21/67167 ,  H01L21/67253 ,  H01L21/67736 ,  Y10S134/902 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S414/14

Abstract: This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dry-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used for dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.

公开(公告)号：US20010002517A1

公开(公告)日：2001-06-07

申请号：US09766975

申请日：2001-01-23

Inventor： Shigekazu Kato ,  Kouji Nishihata ,  Tsunehiko Tsubone ,  Atsushi Itou

IPC: F26B005/04

CPC classification number: H01L21/67748 ,  B01J3/006 ,  B41J2/36 ,  B41J2/365 ,  C23C14/564 ,  H01L21/67028 ,  H01L21/67167 ,  H01L21/67253 ,  H01L21/67736 ,  Y10S134/902 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S414/14

Abstract: This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dry-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used for dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.

公开(公告)号：US06241917B1

公开(公告)日：2001-06-05

申请号：US09316170

申请日：1999-05-21

Applicant: David W. Owens ,  John F. Balhoff

Inventor： David W. Owens ,  John F. Balhoff

IPC: C07F102

CPC classification number: C07B39/00 ,  B01J3/006 ,  B01J19/18 ,  B01J2219/00132 ,  B01J2219/00162 ,  B01J2219/0027 ,  C07C17/208 ,  C07F3/02 ,  C07F5/027

Abstract: Chloropentafluorobenzene or bromopentafluorobenzene is formed by heating perhalobenzene, C6FnX6-n where n is 0 to 4, and each X is, independently, a chlorine or bromine atom, with alkali metal fluoride, and an aminophosphonium catalyst (e.g., (Et2N)4PBr). The resultant chloropentafluorobenzene or bromopentafluorobenzene can be converted into a pentafluorophenyl Grignard reagent or a pentafluorophenyl alkali metal compound. This in turn can be converted into tris(pentafluorophenylborane), which can be converted into a single coordination complex comprising a labile tetra(pentafluorophenyl)boron anion (e.g., a trialkylammonium tetra(pentafluorophenyl) boron complex or an N,N-dimethylanilinium tetra(pentafluorophenyl)boron complex). The complex can be used in the preparation of an active catalyst by mixing the complex with a cyclopentadienyl metal compound containing a Group 4 metal in suitable solvent or diluent so that the cation of the complex reacts irreversibly with a ligand of the cyclopentadienyl compound, and such that the pentafluorophenyl anion forms a non-coordinating ion pair with a resulting cation produced from the cyclopentadienyl metal compound. Alternatively, the tris(pentafluorophenylborane) can be contacted with a metallocene of the formula LMX2 wherein L is a derivative of a delocalized pi-bonded group imparting a constrained geometry to the metal active site and where L contains up to 50 non-hydrogen atoms, M is a Group 4 metal, and each X is, independently, hydride, or a hydrocarbyl, silyl, or germyl group having up to 20 carbon, silicon, or germanium atoms to form a catalyst having a limiting charge separated structure of the formula LMX⊕XA⊖ wherein A is an anion formed from the tris(pentafluorophenyl)borane.

Abstract translation: 通过加热全卤苯，其中n为0至4的C 6 F n X 6-n，和各自独立地为氯或溴原子，与碱金属氟化物和氨基鏻催化剂（例如（Et 2 N）4 PBr））形成氯五氟苯或溴五氟苯。 得到的氯五氟苯或溴五氟苯可以转化成五氟苯基格氏试剂或五氟苯基碱金属化合物。 这可以转化成三（五氟苯基硼烷），其可以转化成包含不稳定的四（五氟苯基）硼阴离子的单一配位络合物（例如三烷基四（五氟苯基）硼络合物或N，N-二甲基苯胺四 五氟苯基）硼络合物）。 该络合物可用于制备活性催化剂，该配合物与合适的溶剂或稀释剂中含有第4族金属的环戊二烯基金属化合物混合，使得络合物的阳离子与环戊二烯基化合物的配体不可逆地反应， 五氟苯基阴离子与由环戊二烯基金属化合物产生的所得阳离子形成非配位离子对。 或者，三（五氟苯基硼烷）可以与式LMX2的茂金属接触，其中L是离域化π键合基团的衍生物，赋予金属活性位点约束几何形状，并且其中L含有多达50个非氢原子， M是第4族金属，并且每个X独立地是氢化物，或具有至多20个碳，硅或锗原子的烃基，甲硅烷基或甲锗烷基，以形成具有限定电荷分离结构的式LMX ⊕XA⊖其中A是由三（五氟苯基）硼烷形成的阴离子。

公开(公告)号：US20010001902A1

公开(公告)日：2001-05-31

申请号：US09767837

申请日：2001-01-24

Inventor： Shigekazu Kato ,  Kouji Nishihata ,  Tsunehiko Tsubone ,  Atsushi Itou

IPC: F26B005/04

CPC classification number: H01L21/67748 ,  B01J3/006 ,  B41J2/36 ,  B41J2/365 ,  C23C14/564 ,  H01L21/67028 ,  H01L21/67167 ,  H01L21/67253 ,  H01L21/67736 ,  Y10S134/902 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S414/14

Abstract: This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus When the vacuum processing chambers are dry-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used for dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.

公开(公告)号：US6044576A

公开(公告)日：2000-04-04

申请号：US390684

申请日：1999-09-07

Applicant: Shigekazu Kato ,  Kouji Nishihata ,  Tsunehiko Tsubone ,  Atsushi Itou

Inventor： Shigekazu Kato ,  Kouji Nishihata ,  Tsunehiko Tsubone ,  Atsushi Itou

IPC: B01J3/00 ,  B41J2/36 ,  B41J2/365 ,  C23C14/56 ,  H01L21/00 ,  H01L21/677 ,  F26B5/04

CPC classification number: H01L21/67748 ,  B01J3/006 ,  B41J2/36 ,  B41J2/365 ,  C23C14/564 ,  H01L21/67028 ,  H01L21/67167 ,  H01L21/67253 ,  H01L21/67736 ,  Y10S134/902 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S414/14

Abstract: This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dry-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used for dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.

Abstract translation: 本发明涉及一种具有真空处理室的真空处理装置，其内部必须是干式清洁的，以及一种操作这种装置的方法。 当真空处理室被干洗时，虚设基板通过基板传送装置从设置在空气气氛中的虚设基板存储装置与用于存储待处理基板的存储装置一起转移到真空处理室中， 通过产生等离子体对真空处理室进行干洗。 在完成干洗之后，虚拟衬底返回到虚设衬底存储装置。 因此，仅用于清洁目的的特定机构是不必要的，并且可以使装置的结构简单。 此外，用于干洗的虚拟基板和待加工的基板不共存，可以防止由于灰尘和剩余气体而被处理的基板的污染，并且生产率可以高。