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    Vacuum chamber, feedthrough system for vacuum chamber and methods
    1.
    发明授权
    Vacuum chamber, feedthrough system for vacuum chamber and methods 有权

    公开(公告)号：US11679366B2

    公开(公告)日：2023-06-20

    申请号：US17657677

    申请日：2022-04-01

    Applicant: Sidus Space, Inc.

    Inventor： Ivan Townsend ,  Jason Schuler ,  Robert Cox

    IPC: B01J3/00

    CPC classification number: B01J3/006

    Abstract: A vacuum chamber may include an ambient side and a vacuum side. The vacuum chamber may be configured to carry a feedthrough that may include a hollow tube, a first O-ring captured by a first recess within the hollow tube and a rod extending through the hollow tube. The outer circumference of the rod may be configured to contact an entirety of an inner circumference of the first O-ring. A vacuum fitting having an inner circumference may be fixedly secured to the hollow tube. The rod may be operable to be linearly movable within the hollow tube and may be rotatably movable about an axis within the hollow tube. An object may be secured to the rod and may be linearly and rotatably moved within the vacuum chamber.

    Apparatus for obtaining growth factors
    3.
    发明授权
    Apparatus for obtaining growth factors 有权
    用于获得生长因子的装置

    公开(公告)号：US08871526B1

    公开(公告)日：2014-10-28

    申请号：US13986745

    申请日：2013-05-31

    Applicant: Orogen Biosciences, Inc.

    Inventor： James B. Gandy ,  Ryan N Brandt

    IPC: G01N1/10 ,  C07K1/34 ,  B01J3/00 ,  G01N33/49

    CPC classification number: C07K1/34 ,  A61M1/0009 ,  A61M1/0068 ,  A61M1/02 ,  A61M1/029 ,  A61M1/3695 ,  A61M2202/0427 ,  A61M2202/0462 ,  B01J3/006 ,  C07K14/475 ,  G01N33/491 ,  Y10T436/25375

    Abstract: A reservoir is supported by a base in a vertical position. A reciprocating member is positioned in the reservoir forming an internal chamber. The chamber receives growth factor starting material through an inlet in the reciprocating member. After the inlet is sealed, the reciprocating member increases the volume of the chamber to apply negative pressure to the growth factor starting material within the chamber to produce activated growth factors. The activated growth factors are extracted from the chamber through an outlet in the reciprocating member. Optionally, the growth factor starting material is held in the chamber to separate into fractions.

    Abstract translation: 储存器由垂直位置的基座支撑。 往复运动的构件定位在储存器中，形成内部腔室。 腔室通过往复运动构件中的入口容纳生长因子原料。 在入口被密封之后，往复构件增加腔室的体积，以对室内的生长因子原料施加负压以产生活化的生长因子。 活化的生长因子通过往复运动构件中的出口从腔室中提取出来。 任选地，将生长因子原料保持在室中以分离成级分。

    VACUUM PROCESSING DEVICE AND VACUUM PROCESSING METHOD
    5.
    发明申请
    VACUUM PROCESSING DEVICE AND VACUUM PROCESSING METHOD 审中-公开
    真空处理装置和真空处理方法

    公开(公告)号：US20140158301A1

    公开(公告)日：2014-06-12

    申请号：US14177627

    申请日：2014-02-11

    Applicant: ULVAC, Inc.

    Inventor： Ken MAEHIRA ,  Taichi SUZUKI ,  Eriko MASE ,  Koh FUWA

    IPC: B01J3/00

    CPC classification number: B01J3/006 ,  H01J37/321 ,  H01J37/32706 ,  H01J37/32715 ,  H01L21/6831

    Abstract: A vacuum processing device and a vacuum processing method that strongly chuck and hold an insulating substrate when plasma processing is performed are provided. The vacuum processing device includes a vacuum chamber that is grounded; a vacuum evacuation device connected to the vacuum chamber; a chuck device arranged inside the vacuum chamber; a chuck power supply for applying an output voltage to a single-pole type electrode provided in the chuck device; a plasma generation gas introduction device for introducing a plasma generation gas into the vacuum chamber; and a plasma generation portion which converts the plasma generation gas into plasma. An object to be processed is arranged on the chuck device; and the chuck power supply applies an output voltage to the single-pole type electrode while the plasma is being generated inside the vacuum chamber; and the object to be processed is processed by the plasma while the object to be processed is being chucked by the chuck device. An insulating substrate is used as the object to be processed and the chuck power supply applies the output voltage that periodically changes between a positive voltage and a negative voltage to the single-pole type electrode.

    Abstract translation: 提供了一种在执行等离子体处理时强力夹持和保持绝缘基板的真空处理装置和真空处理方法。 真空处理装置包括接地的真空室; 连接到真空室的真空排气装置; 设置在真空室内的卡盘装置; 用于向设置在所述卡盘装置中的单极型电极施加输出电压的卡盘电源; 用于将等离子体产生气体引入到真空室中的等离子体产生气体引入装置; 以及将等离子体产生气体转换为等离子体的等离子体产生部。 待加工对象布置在卡盘装置上; 并且所述卡盘电源在所述真空室内产生等离子体时向所述单极型电极施加输出电压; 并且待加工对象被等离子体处理时，被加工物被卡盘装置卡住。 使用绝缘基板作为待处理对象，并且卡盘电源将正电压和负电压之间周期性变化的输出电压施加到单极型电极。

    METHOD OF PRODUCING HIGH PURITY SiOx NANOPARTICLES WITH EXCELLENT VOLATILITY AND APPARATUS FOR PRODUCING THE SAME
    7.
    发明申请
    METHOD OF PRODUCING HIGH PURITY SiOx NANOPARTICLES WITH EXCELLENT VOLATILITY AND APPARATUS FOR PRODUCING THE SAME 审中-公开
    生产具有优异挥发性的高纯度SiO x纳米粒子的方法及其制造方法

    公开(公告)号：US20120251710A1

    公开(公告)日：2012-10-04

    申请号：US13267474

    申请日：2011-10-06

    Applicant: Bo-Yun JANG ,  Jin-Seok LEE ,  Joon-Soo KIM

    Inventor： Bo-Yun JANG ,  Jin-Seok LEE ,  Joon-Soo KIM

    IPC: C01B33/113 ,  B05D5/12 ,  B01J19/00 ,  C23C16/26 ,  B82Y40/00 ,  B82Y30/00

    CPC classification number: H01M4/049 ,  B01J3/006 ,  B82Y30/00 ,  B82Y40/00 ,  C01B33/181 ,  C01P2004/64 ,  H01M4/0428 ,  H01M4/483 ,  Y10T428/2982

    Abstract: The present disclosure provides a method of producing high purity SiOx nanoparticles with excellent volatility and an apparatus for producing the same, which enables mass production of SiOx nanoparticles by melting silicon through induction heating and injecting gas to a surface of the molten silicon. The apparatus includes a vacuum chamber, a graphite crucible into which raw silicon is charged, the graphite crucible being mounted inside the vacuum chamber, an induction melting part which forms molten silicon by induction heating of the silicon material received in the graphite crucible, a gas injector which injects a gas into the graphite crucible to be brought into direct contact with a surface of the molten silicon, and a collector disposed above the graphite crucible and collecting SiOx vapor produced by reaction between the molten silicon and the injected gas.

    Abstract translation: 本公开内容提供了制造具有优异挥发性的高纯度SiO x纳米颗粒的方法及其制造方法，其能够通过感应加热熔融硅并将气体注入熔融硅的表面而大量生产SiO x纳米颗粒。 该装置包括：真空室，其中装有原料硅的石墨坩埚，石墨坩埚安装在真空室内;感应熔化部，其通过感应加热石墨坩埚中接收的硅材料形成熔融硅;气体 将注入气体的石油坩埚与熔融硅的表面直接接触的集尘器，以及设置在石墨坩埚上方的集电体，收集由熔融硅与注入气体反应产生的SiO x蒸气。

    GAS HYDRATE REACTOR COMPRISING THERMOELECTRIC MODULE
    8.
    发明申请
    GAS HYDRATE REACTOR COMPRISING THERMOELECTRIC MODULE 审中-公开
    包含热电模块的气体水合物反应器

    公开(公告)号：US20120082590A1

    公开(公告)日：2012-04-05

    申请号：US12916278

    申请日：2010-10-29

    Applicant: Ju Dong LEE ,  Young Cheol LEE ,  Hyung Ho JO ,  Hu-Kab CHO

    Inventor： Ju Dong LEE ,  Young Cheol LEE ,  Hyung Ho JO ,  Hu-Kab CHO

    IPC: G05D23/00 ,  B01J19/00

    CPC classification number: B01J3/006 ,  B01J19/24 ,  B01J2219/00094 ,  B01J2219/00135 ,  B01J2219/00186 ,  C10L3/108 ,  G05D23/19

    Abstract: Disclosed is a gas hydrate reactor including a supply line for supplying water and gas, a thermoelectric module assembly, a front panel including an observation window, and a housing to which the thermoelectric module assembly and the front panel are attached and into which water and gas are supplied using the supply line so that a gas hydrate is formed therein. This reactor enables rapid and precise temperature control, thus allowing accurate data about properties to be easily acquired in kinetics, phase equilibrium, morphology and microscopic (Raman, XRD, etc.) research of a gas hydrate, thereby leading to the discovery of a gas hydrate production/decomposition mechanism and ensuring important information necessary for a gas hydrate application process.

    Abstract translation: 公开了一种天然气水合物反应器，其包括用于供应水和气体的供应管线，热电模块组件，包括观察窗口的前面板和附接有热电模块组件和前面板的壳体，水和气体 使用供给管线供给，从而在其中形成气体水合物。 该反应器能够进行快速和精确的温度控制，从而允许在气体水合物的动力学，相平衡，形态和微观（拉曼，XRD等）研究中容易获得关于性质的精确数据，从而导致发现气体 水合物生产/分解机制，确保天然气水合物应用过程所需的重要信息。

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