Abstract:
A fabrication method of an RF MEMS switch includes forming a signal transmission line having a first signal transmission line and a second signal transmission line electrically separated from each other for transmitting a signal and forming an on/off component for turning on/off the signal transmission line. The forming the on/off component further includes forming a suspension layer, forming a piezoelectric capacitor disposed at the suspension layers, and actuated with a piezoelectric characteristic by receiving an external power, forming a contact electrode disposed at the suspension layers, and electrically separated from the piezoelectric capacitors, and forming a ground line adjacent to the signal transmission line, wherein the ground line is electrically connected to the signal transmission line by a connection line.
Abstract:
Disclosed is a micro-electro-mechanical switch, including a substrate having a gate connection, a source connection, a drain connection and a switch structure, coupled to the substrate. The switch structure includes a beam member, an anchor, an anchor beam interface and a hinge. The beam member having a length sufficient to overhang both the gate connection and the drain connection. The anchor coupling the switch structure to the substrate. The anchor beam interface coupling the anchor to the hinge. The hinge coupling the beam member to the anchor at a respective position along the anchor's length, the hinge to flex in response to a voltage differential established between the gate and the beam member. The switch structure having gaps between the substrate and the anchor in regions proximate to the hinges.
Abstract:
The present invention provides a MEMS switch that is formed on, not merely placed on, a semiconductor substrate of a semiconductor device. The basic semiconductor substrate includes a handle wafer, an insulator layer over the handle wafer, and a device layer over the insulator layer. The device layer is one in which active semiconductor devices, such as transistors and diodes, may be formed. The MEMS switch is formed over the device layer during fabrication of the semiconductor device. Additional layers, such as connecting layers, passivation layers, and dielectric layers, may be inserted among or between any of these various layers without departing from the essence of the invention. As such, the present invention avoids the need to fabricate MEMS switches apart from the devices that contain circuitry to be associated with the MEMS switches, and to subsequently mount the MEMS switches to modules that circuitry.
Abstract:
A MEMS apparatus has a MEMS device sandwiched between a base and a circuit chip. The movable member of the MEMS device is attached at the side up against the circuit chip. The movable member may be mounted on a substrate of the MEMS device or formed directly on a passivation layer on the circuit chip. The circuit chip provides control signals to the MEMS device through wire bonds, vias through the MEMS device or a conductive path such as solder balls external to the MEMS device.
Abstract:
A semiconductor actuator includes a substrate base, a bending structure which is connected to the substrate base and can be deflected at least partially relative to the substrate base. The bending structure has semiconductor compounds on the basis of nitrides of main group III elements and at least two electrical supply contacts which impress an electrical current in or for applying an electrical voltage to the bending structure. At least two of the supply contacts are disposed at a spacing from each other respectively on the bending structure and/or integrated in the latter.
Abstract:
The micro-electromechanical (MEMS) switch comprises a first double-sided cantilever MEMS actuator attached to a substrate and movable in two opposite directions, and a second cantilever MEMS actuator attached to the substrate. In use, the first MEMS actuator is moved in either directions to distribute the stress more uniformly, thereby reducing the mechanical creep and improving its reliability as well as its operation life.
Abstract:
Disclosed are an RF MEMS switch and a fabrication method thereof. According to an embodiment the RF MEMS switch is actuated with a low voltage and a low consumption power by using a piezoelectric capacitor actuated by being converted to mechanical energy from electric energy when an electric field is applied to the piezoelectric capacitor. A cap substrate can be formed by using an etching method, a chemical mechanical polishing method, an electroplating method, etc., and the RF MEMS switch has a high reliability and a high yield.
Abstract:
An integrated arrangement with a circuit and a MEMS switch element is provided, in which the circuit has a plurality of semiconductor components that are connected to form the circuit by metallic traces in several metallization levels located one over the other, in which the metallization levels are located between the MEMS switch element and the semiconductor components, so that the MEMS switch element is located over the topmost metallization level, in which the MEMS switch element is designed to be movable, the MEMS switch element is positioned with respect to a dielectric, so that the movable MEMS switch element and the dielectric produce a variable impedance (for a high-frequency signal), and in which a drive electrode, which is positioned with respect to the MEMS switch element and is for producing an electrostatic force to move the MEMS switch element, is constructed in the topmost metallization level.
Abstract:
A micro-electromechanical system switch includes a substrate and a plurality of actuating electrodes formed the substrate wherein each actuating electrode is activatable. A cantilever beam has a first end and a second end and a plurality of stops formed thereon. The plurality of stops engages the substrate between the plurality of actuating electrode. A contact area is formed in the substrate and located to engage the second end of the cantilever beam. A voltage source applies a voltage to each actuating electrode independently in a sequence from an actuating electrode located adjacent to the first end of the cantilever beam to an actuating electrode located adjacent to the second end of the cantilever beam so that the plurality of stops sequentially engage the substrate between the plurality of actuating electrodes.
Abstract:
Resonators 4 and 5 are able to oscillate horizontally and vertically to substrate 1. Resonator 4 is primarily composed of a supporting portion in stationary contact with substrate 1, a movable portion including a contact surface making contact with resonator 5 and a contact surface making contact with electrode 7, and a crossing portion that couples the supporting portion and movable portion. Electrode 6 is disposed in the direction in which resonator 5 is spaced apart from resonator 4. Electrode 7 is disposed in the direction in which resonator 4 is spaced apart from resonator 5. Electrode 9 is disposed in a position that causes resonator 5 to generate electrostatic force in a direction different from the direction of both forces of attraction acting between resonators 4 and 5 and between resonator 5 and electrode 6.