Fabrication method of an RF MEMS switch
    31.
    发明授权
    Fabrication method of an RF MEMS switch 有权
    RF MEMS开关的制造方法

    公开(公告)号:US07765681B2

    公开(公告)日:2010-08-03

    申请号:US11640198

    申请日:2006-12-18

    Abstract: A fabrication method of an RF MEMS switch includes forming a signal transmission line having a first signal transmission line and a second signal transmission line electrically separated from each other for transmitting a signal and forming an on/off component for turning on/off the signal transmission line. The forming the on/off component further includes forming a suspension layer, forming a piezoelectric capacitor disposed at the suspension layers, and actuated with a piezoelectric characteristic by receiving an external power, forming a contact electrode disposed at the suspension layers, and electrically separated from the piezoelectric capacitors, and forming a ground line adjacent to the signal transmission line, wherein the ground line is electrically connected to the signal transmission line by a connection line.

    Abstract translation: RF MEMS开关的制造方法包括形成具有彼此电分离的第一信号传输线和第二信号传输线的信号传输线,用于发送信号并形成用于接通/断开信号传输的导通/截断部件 线。 形成开/关组件还包括形成悬浮层,形成设置在悬浮层上的压电电容器,并通过接收外部电力以压电特性致动,形成设置在悬浮层上的接触电极,并与 压电电容器,并且形成与信号传输线相邻的接地线,其中接地线通过连接线电连接到信号传输线。

    MICRO-ELECTRO-MECHANICAL SWITCH BEAM CONSTRUCTION WITH MINIMIZED BEAM DISTORTION AND METHOD FOR CONSTRUCTING
    32.
    发明申请
    MICRO-ELECTRO-MECHANICAL SWITCH BEAM CONSTRUCTION WITH MINIMIZED BEAM DISTORTION AND METHOD FOR CONSTRUCTING 有权
    具有最小波束失真的微机电开关梁结构和构造方法

    公开(公告)号:US20100187076A1

    公开(公告)日:2010-07-29

    申请号:US12755285

    申请日:2010-04-06

    CPC classification number: H01H57/00 B81B7/0012 B81B2201/014 H01H59/0009

    Abstract: Disclosed is a micro-electro-mechanical switch, including a substrate having a gate connection, a source connection, a drain connection and a switch structure, coupled to the substrate. The switch structure includes a beam member, an anchor, an anchor beam interface and a hinge. The beam member having a length sufficient to overhang both the gate connection and the drain connection. The anchor coupling the switch structure to the substrate. The anchor beam interface coupling the anchor to the hinge. The hinge coupling the beam member to the anchor at a respective position along the anchor's length, the hinge to flex in response to a voltage differential established between the gate and the beam member. The switch structure having gaps between the substrate and the anchor in regions proximate to the hinges.

    Abstract translation: 公开了一种微电子机械开关,其包括耦合到衬底的具有栅极连接的衬底,源极连接,漏极连接和开关结构。 开关结构包括梁构件,锚固件,锚梁接口和铰链。 所述梁构件具有足以突出所述栅极连接和所述排出连接的长度。 将开关结构连接到基板上。 将锚杆与铰链连接的锚梁接口。 铰链将梁构件沿着锚定件的长度在相应的位置处联接到锚固件,铰链响应于门和梁构件之间建立的电压差而弯曲。 开关结构在靠近铰链的区域中在基板和锚之间具有间隙。

    Integrated MEMS switch
    33.
    发明授权
    Integrated MEMS switch 有权
    集成MEMS开关

    公开(公告)号:US07745892B1

    公开(公告)日:2010-06-29

    申请号:US11955918

    申请日:2007-12-13

    CPC classification number: B81C1/00246 B81B2201/014 H01H59/0009

    Abstract: The present invention provides a MEMS switch that is formed on, not merely placed on, a semiconductor substrate of a semiconductor device. The basic semiconductor substrate includes a handle wafer, an insulator layer over the handle wafer, and a device layer over the insulator layer. The device layer is one in which active semiconductor devices, such as transistors and diodes, may be formed. The MEMS switch is formed over the device layer during fabrication of the semiconductor device. Additional layers, such as connecting layers, passivation layers, and dielectric layers, may be inserted among or between any of these various layers without departing from the essence of the invention. As such, the present invention avoids the need to fabricate MEMS switches apart from the devices that contain circuitry to be associated with the MEMS switches, and to subsequently mount the MEMS switches to modules that circuitry.

    Abstract translation: 本发明提供一种MEMS开关,其形成在半导体器件的半导体衬底上,而不仅仅放置在其上。 基本半导体衬底包括处理晶片,处理晶片上方的绝缘体层以及绝缘体层上方的器件层。 器件层是其中可以形成诸如晶体管和二极管的有源半导体器件的器件层。 在半导体器件的制造期间,MEMS开关形成在器件层上。 在不脱离本发明的实质的情况下,可以在这些各层之间或之间插入附加层,例如连接层,钝化层和电介质层。 因此,本发明避免了制造除了与MEMS开关相关联的电路的器件之外的MEMS开关以及随后将MEMS开关安装到该电路的模块的需要。

    Micromechanical Actuators Comprising Semiconductors on a Group III Nitride Basis
    35.
    发明申请
    Micromechanical Actuators Comprising Semiconductors on a Group III Nitride Basis 有权
    包含第III组氮化物基础上的半导体的微机械致动器

    公开(公告)号:US20090174014A1

    公开(公告)日:2009-07-09

    申请号:US12300831

    申请日:2007-05-16

    Abstract: A semiconductor actuator includes a substrate base, a bending structure which is connected to the substrate base and can be deflected at least partially relative to the substrate base. The bending structure has semiconductor compounds on the basis of nitrides of main group III elements and at least two electrical supply contacts which impress an electrical current in or for applying an electrical voltage to the bending structure. At least two of the supply contacts are disposed at a spacing from each other respectively on the bending structure and/or integrated in the latter.

    Abstract translation: 半导体致动器包括基板,弯曲结构,其连接到基板基底并且可相对于基板基底至少部分地偏转。 该弯曲结构基于主要III族元素的氮化物和至少两个给弯曲结构施加电压或施加电压的电流的电源触点而具有半导体化合物。 至少两个电源触点分别设置在弯曲结构上和/或与后者集成在一起的彼此间隔开。

    MEMS actuators with even stress distribution
    36.
    发明申请
    MEMS actuators with even stress distribution 审中-公开
    具有均匀应力分布的MEMS致动器

    公开(公告)号:US20090033454A1

    公开(公告)日:2009-02-05

    申请号:US11882457

    申请日:2007-08-01

    CPC classification number: B81B3/0072 B81B2201/014 B81B2203/051 H01H2061/008

    Abstract: The micro-electromechanical (MEMS) switch comprises a first double-sided cantilever MEMS actuator attached to a substrate and movable in two opposite directions, and a second cantilever MEMS actuator attached to the substrate. In use, the first MEMS actuator is moved in either directions to distribute the stress more uniformly, thereby reducing the mechanical creep and improving its reliability as well as its operation life.

    Abstract translation: 微机电(MEMS)开关包括附接到基板并可在两个相反方向上移动的第一双边悬臂MEMS致动器和附接到基板的第二悬臂MEMS致动器。 在使用中,第一MEMS致动器在任一方向上移动以更均匀地分布应力,从而减少机械蠕变并提高其可靠性以及其使用寿命。

    RF MEMS switch and fabrication method thereof
    37.
    发明授权
    RF MEMS switch and fabrication method thereof 有权
    RF MEMS开关及其制造方法

    公开(公告)号:US07456713B2

    公开(公告)日:2008-11-25

    申请号:US11646293

    申请日:2006-12-28

    Abstract: Disclosed are an RF MEMS switch and a fabrication method thereof. According to an embodiment the RF MEMS switch is actuated with a low voltage and a low consumption power by using a piezoelectric capacitor actuated by being converted to mechanical energy from electric energy when an electric field is applied to the piezoelectric capacitor. A cap substrate can be formed by using an etching method, a chemical mechanical polishing method, an electroplating method, etc., and the RF MEMS switch has a high reliability and a high yield.

    Abstract translation: 公开了一种RF MEMS开关及其制造方法。 根据实施例,通过使用当电场施加到压电电容器时通过从电能转换为机械能而致动的压电电容器,利用低电压和低功率功率来致动RF MEMS开关。 可以通过使用蚀刻方法,化学机械抛光方法,电镀方法等形成盖基板,并且RF MEMS开关具有高可靠性和高产量。

    INTEGRATED ARRANGEMENT AND METHOD FOR PRODUCTION
    38.
    发明申请
    INTEGRATED ARRANGEMENT AND METHOD FOR PRODUCTION 审中-公开
    综合布置和生产方法

    公开(公告)号:US20080217149A1

    公开(公告)日:2008-09-11

    申请号:US11964687

    申请日:2007-12-26

    Abstract: An integrated arrangement with a circuit and a MEMS switch element is provided, in which the circuit has a plurality of semiconductor components that are connected to form the circuit by metallic traces in several metallization levels located one over the other, in which the metallization levels are located between the MEMS switch element and the semiconductor components, so that the MEMS switch element is located over the topmost metallization level, in which the MEMS switch element is designed to be movable, the MEMS switch element is positioned with respect to a dielectric, so that the movable MEMS switch element and the dielectric produce a variable impedance (for a high-frequency signal), and in which a drive electrode, which is positioned with respect to the MEMS switch element and is for producing an electrostatic force to move the MEMS switch element, is constructed in the topmost metallization level.

    Abstract translation: 提供了一种具有电路和MEMS开关元件的集成布置,其中电路具有多个半导体元件,其连接以通过几个金属化层级之间的金属迹线形成电路,其中金属化电平为 位于MEMS开关元件和半导体部件之间,使得MEMS开关元件位于最开始的金属化水平上,其中MEMS开关元件被设计为可移动的,MEMS开关元件相对于电介质定位,因此 可移动MEMS开关元件和电介质产生可变阻抗(用于高频信号),并且其中相对于MEMS开关元件定位并用于产生静电力以移动MEMS的驱动电极 开关元件构造在最高的金属化水平。

    MICRO-ELECTRO MECHANICAL TUNNELING SWITCH
    39.
    发明申请
    MICRO-ELECTRO MECHANICAL TUNNELING SWITCH 有权
    微电机械隧道开关

    公开(公告)号:US20080135386A1

    公开(公告)日:2008-06-12

    申请号:US11943146

    申请日:2007-11-20

    Abstract: A micro-electromechanical system switch includes a substrate and a plurality of actuating electrodes formed the substrate wherein each actuating electrode is activatable. A cantilever beam has a first end and a second end and a plurality of stops formed thereon. The plurality of stops engages the substrate between the plurality of actuating electrode. A contact area is formed in the substrate and located to engage the second end of the cantilever beam. A voltage source applies a voltage to each actuating electrode independently in a sequence from an actuating electrode located adjacent to the first end of the cantilever beam to an actuating electrode located adjacent to the second end of the cantilever beam so that the plurality of stops sequentially engage the substrate between the plurality of actuating electrodes.

    Abstract translation: 微机电系统开关包括基板和形成基板的多个致动电极,其中每个致动电极都是可激活的。 悬臂梁具有形成在其上的第一端和第二端以及多个挡块。 多个止动件与多个致动电极之间的基板接合。 接触区域形成在基板中并且被定位成接合悬臂梁的第二端。 电压源以与从悬臂梁的第一端相邻的致动电极的顺序独立地向每个致动电极施加电压到与悬臂梁的第二端相邻的致动电极,使得多个停止件顺序地接合 多个致动电极之间的基板。

    Micro device
    40.
    发明授权
    Micro device 失效
    微型器件

    公开(公告)号:US07138893B2

    公开(公告)日:2006-11-21

    申请号:US10478305

    申请日:2003-01-16

    Abstract: Resonators 4 and 5 are able to oscillate horizontally and vertically to substrate 1. Resonator 4 is primarily composed of a supporting portion in stationary contact with substrate 1, a movable portion including a contact surface making contact with resonator 5 and a contact surface making contact with electrode 7, and a crossing portion that couples the supporting portion and movable portion. Electrode 6 is disposed in the direction in which resonator 5 is spaced apart from resonator 4. Electrode 7 is disposed in the direction in which resonator 4 is spaced apart from resonator 5. Electrode 9 is disposed in a position that causes resonator 5 to generate electrostatic force in a direction different from the direction of both forces of attraction acting between resonators 4 and 5 and between resonator 5 and electrode 6.

    Abstract translation: 谐振器4和5能够水平和垂直地振荡到衬底1。 谐振器4主要由与基板1固定接触的支撑部分构成,可动部分包括与谐振器5接触的接触表面和与电极7接触的接触表面,以及将支撑部分和可移动部分 。 电极6沿谐振器5与谐振器4间隔开的方向设置。 电极7沿谐振器4与谐振器5间隔开的方向设置。 电极9设置在使得谐振器5沿与谐振器4和5之间以及谐振器5和电极6之间的两个吸引力的方向不同的方向产生静电力的位置。

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