Method for treating the surface of an electrically conducting substrate surface
    32.
    发明授权
    Method for treating the surface of an electrically conducting substrate surface 有权
    用于处理导电基底表面的表面的方法

    公开(公告)号:US08758590B2

    公开(公告)日:2014-06-24

    申请号:US12295321

    申请日:2007-04-20

    CPC classification number: B23H3/00 B81C1/00634 B81C2201/0146 C25F3/14

    Abstract: Disclosed is a method of treating the surface of an electrically conducting substrate surface wherein a tool comprising an ion-conducting solid material is brought into contact at least in some areas with the substrate surface. The tool conducts the metal ions of the substrate and an electric potential is applied so that an electrical potential gradient is applied between the substrate surface and the tool in such a manner that metal ions are drawn from the substrate surface or deposited onto the substrate surface by means of the tool.

    Abstract translation: 公开了一种处理导电衬底表面的方法,其中包括离子导电固体材料的工具至少在一些区域与衬底表面接触。 该工具传导衬底的金属离子并且施加电位,使得电位梯度以这样的方式施加在衬底表面和工具之间,使得金属离子从衬底表面被拉出或沉积到衬底表面上 手段的工具。

    Methods for Manufacturing a Microstructure
    33.
    发明申请
    Methods for Manufacturing a Microstructure 审中-公开
    微结构制造方法

    公开(公告)号:US20100288729A1

    公开(公告)日:2010-11-18

    申请号:US12681851

    申请日:2008-10-03

    Abstract: Methods for manufacturing a microstructure, wherein use is made of a powder blasting and/or etching and a single mask layer with openings and structures of varying dimensions, wherein the mask layer at least at one given point in time has been wholly worn away within at least one region by mask erosion while the microstructure is not yet wholly realized. Use can be made of a combination of ‘vertical’ erosion, i.e. parallel to the thickness direction and ‘horizontal’ erosion, i.e. perpendicularly of the thickness direction, of the mask layer. The horizontal mask erosion occurs at the edges of the mask structure.

    Abstract translation: 用于制造微结构的方法,其中使用粉末喷射和/或蚀刻以及具有不同尺寸的开口和结构的单个掩模层,其中至少在一个给定时间点的掩模层已经被完全磨损在内 至少一个区域通过掩模侵蚀,而微结构尚未完全实现。 可以使用“垂直”腐蚀,即平行于厚度方向和“水平”侵蚀,即垂直于掩模层的厚度方向垂直的侵蚀的组合。 在掩模结构的边缘处发生水平掩模腐蚀。

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