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公开(公告)号：US20120256105A1
公开(公告)日：2012-10-11
申请号：US13494778
申请日：2012-06-12
Applicant: Masato MORIYA , Osamu Wakabayashi , Georg Soumagne
Inventor： Masato MORIYA , Osamu Wakabayashi , Georg Soumagne
IPC: G21K5/00
CPC classification number: H05G2/003 , B82Y10/00 , G03F7/70575 , G21K1/062 , G21K2201/061 , G21K2201/064 , G21K2201/067
Abstract: The exposure device is able to supply only EUV radiation to a mask, while eliminating radiation other than the EUV radiation. A multi layer made from a plurality of Mo/Si pair layers is provided upon the front surface of a mirror, and blazed grooves are formed in this multi layer. Radiation which is incident from a light source device is incident upon this mirror, and is reflected or diffracted. Since the reflected EUV radiation (including diffracted EUV radiation) and the radiation of other wavelengths are reflected or diffracted at different angles, accordingly their directions of progression are different. By eliminating the radiation of other wavelengths with an aperture and/or a dumper, it is possible to irradiate a mask only with EUV radiation of high purity.
Abstract translation: 曝光装置只能将EUV辐射提供给掩模，同时消除EUV辐射以外的辐射。 在反射镜的前表面上设置由多个Mo / Si对层制成的多层，并且在该多层中形成闪耀的凹槽。 从光源装置入射的辐射入射在该反射镜上并被反射或衍射。 由于反射的EUV辐射（包括衍射的EUV辐射）和其他波长的辐射在不同的角度被反射或衍射，因此它们的进展方向是不同的。 通过用孔和/或自卸车消除其它波长的辐射，可以仅用高纯度的EUV辐射照射掩模。
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32.发明申请公开(公告)号：US20120248342A1
公开(公告)日：2012-10-04
申请号：US13437678
申请日：2012-04-02
Applicant: Masato MORIYA , Osamu Wakabayashi , Georg Soumagne
Inventor： Masato MORIYA , Osamu Wakabayashi , Georg Soumagne
IPC: G21K5/04
CPC classification number: G02B5/1838 , G02B5/0891 , G02B5/1857 , G03F7/70575 , G21K1/065 , G21K2201/064
Abstract: An EUV light source is configured for generating an EUV light for an exposure device. The EUV light source includes a chamber, a target supply device configured for supplying a target into the chamber, an optical system for introducing laser light from a driver laser into the chamber and irradiating the target with the laser light to turn the target into plasma from which EUV light is emitted, and an EUV collector mirror in the chamber. The EUV collector mirror may include a multilayered reflecting surface with grooves and collect the EUV light from the plasma to a focal spot. The grooves can be arranged in a concentric fashion, and be configured for diffracting at least light at a wavelength which is the same as that of the laser light from the driver laser.
Abstract translation: EUV光源被配置为产生用于曝光装置的EUV光。 所述EUV光源包括室，被配置为将靶供给到所述室中的目标供给装置，用于将来自驱动器激光器的激光引入所述室并且用所述激光照射所述靶的光学系统，以将所述靶转换成等离子体 哪个EUV光被发射，并且在室中的EUV收集器反射镜。 EUV收集器反射镜可以包括具有凹槽的多层反射表面并且将来自等离子体的EUV光收集到焦点。 凹槽可以以同心的方式布置，并且被配置为至少衍射与来自驱动器激光器的激光的波长相同的光。
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公开(公告)号：US08235769B2
公开(公告)日：2012-08-07
申请号：US11989960
申请日：2006-08-03
Applicant: Yuzo Mori
Inventor： Yuzo Mori
IPC: B24B49/00
CPC classification number: G21K1/06 , B23H5/04 , B23H7/38 , B23K15/00 , B24B31/10 , B24C1/08 , G21K2201/064 , G21K2201/067 , Y10S451/908
Abstract: To provide an electron beam assisted EEM method that can realize ultraprecision machining of workpieces, including glass ceramic materials, in which at least two component materials different from each other in machining speed in a machining process are present in a refined mixed state and the surface state is not even, to a surface roughness of 0.2 to 0.05 nm RMS. The EEM method comprises a working process in which a workpiece and chemically reactive fine particles are allowed to flow along the working face to remove atoms on the working face chemically bonded to the fine particles together with the fine particles through chemical interaction between the fine particles and the working face interface. The workpiece comprises at least two component materials present in a refined mixed state and different from each other in machining speed in the machining process. After the exposure of the workpiece in its working face to an electron beam to conduct modification so that the machining speed of the surface layer part in the working face is substantially even, ultraprecision smoothening is carried out by working process.
Abstract translation: 提供一种能够实现包括玻璃陶瓷材料在内的工件的超精密加工的电子束辅助EEM方法，其中在加工过程中以加工速度彼此不同的至少两种组分材料以精细混合状态存在，并且表面状态 不均匀，表面粗糙度为0.2〜0.05nm RMS。 EEM方法包括工作过程，其中允许工件和化学反应性微粒沿着工作面流动，以通过细颗粒与细颗粒之间的化学相互作用将微粒与化学键合的工作面上的原子除去 工作面界面。 工件包括以精加工的混合状态存在并且在加工过程中以加工速度彼此不同的至少两种组分材料。 在将工件的工作面暴露于电子束进行变形，使得工作面中的表层部的加工速度基本均匀的情况下，通过加工工序进行超精密平滑化。
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公开(公告)号：US20120182634A1
公开(公告)日：2012-07-19
申请号：US13392453
申请日：2010-08-27
Applicant: Marcos Bavdaz
Inventor： Marcos Bavdaz
CPC classification number: G21K1/06 , G21K2201/064 , G21K2201/067 , Y10T156/1002
Abstract: The invention relates to a method for assembling a mirror plate stack 30 comprising a plurality of mirror plates 10 and a base plate 13 onto which the plurality of mirror plates are stacked. Additionally, the invention relates to a method for assembling two or more mirror plate stacks into a rigid unit. In order to improve the assembly accuracy of the mirror plates, it is proposed that the method comprises the steps of providing a base plate 13 with a first mirror plate mounted thereto; providing a handling tool with a second mirror plate; providing a spacer to a first surface of the second mirror plate; positioning the handling tool comprising the second mirror plate with the spacer to align the second mirror plate with the first mirror plate, wherein the second mirror plate is aligned relative to the first mirror plate based on a measured position and shape of the first mirror plate to compensate a deviation of the measured position and shape of the first mirror plate from a pre-defined position and shape of the first mirror plate; attaching the second mirror plate to the first mirror plate by bonding the spacer to the first mirror plate, wherein the spacer determines a pre-defined distance between the first and the second mirror plates; exposing a second surface of the second mirror plate by removing the handling tool from the attached second mirror plate; and measuring the position and shape of the attached second mirror plate after the second surface has been exposed.
Abstract translation: 本发明涉及一种组装反光板叠层30的方法，所述镜板组30包括多个镜板10和底板13，所述多个镜板堆叠在该底板上。 另外，本发明涉及一种用于将两个或多个镜板组装配成刚性单元的方法。 为了提高镜板的装配精度，提出了该方法包括以下步骤：为基板13提供安装在其上的第一镜板; 提供具有第二镜板的处理工具; 在所述第二镜板的第一表面上设置间隔件; 将包括第二镜板的处理工具定位成具有间隔件以使第二镜板与第一镜板对准，其中第二镜板相对于第一镜板基于第一镜板的测量位置和形状对准 将第一镜板的测量位置和形状与第一镜板的预定位置和形状的偏差补偿; 通过将间隔件接合到第一镜板将第二镜板附接到第一镜板，其中间隔件确定第一和第二镜板之间的预定义距离; 通过从附接的第二镜板上移除操作工具来暴露第二镜板的第二表面; 并且在第二表面已经暴露之后测量附接的第二镜板的位置和形状。
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35.发明授权公开(公告)号：US08198613B2
公开(公告)日：2012-06-12
申请号：US12469140
申请日：2009-05-20
Applicant: Masato Moriya , Osamu Wakabayashi , Georg Soumagne
Inventor： Masato Moriya , Osamu Wakabayashi , Georg Soumagne
CPC classification number: G02B5/1838 , G02B5/0891 , G02B5/1857 , G03F7/70575 , G21K1/065 , G21K2201/064
Abstract: The EUV light source device eliminates radiation other than EUV radiation from the light which it emits, and supplies only the EUV radiation to an exposure device. A composite layer consisting of a plurality of Mo/Si pair layers is provided upon the front surface of an EUV collector mirror, and blazed grooves are formed in this composite layer. Radiation emitted from a plasma is incident upon this EUV collector mirror, and is reflected or diffracted. The reflected EUV radiation (including diffracted EUV) proceeds towards an intermediate focal point IF. The radiation of other wavelengths proceeds towards some position other than this focal point IF, because its reflection angle or diffraction angle is different. A SPF shield having an aperture portion is provided at the focal point IF. Accordingly, only the EUV radiation passes through the aperture portion and is supplied to the exposure device, while the other radiation is intercepted by the shield.
Abstract translation: EUV光源装置除去其发射的光之外的EUV辐射以外的辐射，并且仅将EUV辐射提供给曝光装置。 在EUV收集镜的前表面上设置由多个Mo / Si对层构成的复合层，在该复合层中形成闪耀槽。 从等离子体发射的辐射入射到该EUV收集镜上，并被反射或衍射。 反射的EUV辐射（包括衍射的EUV）进行到中间焦点IF。 由于其反射角或衍射角不同，其他波长的辐射进入除了该焦点IF之外的某个位置。 具有开口部分的SPF屏蔽设置在焦点IF处。 因此，只有EUV辐射通过开口部分并被提供给曝光装置，而另一辐射被屏蔽件遮挡。
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Patent Agency Ranking
公开(公告)号：US20120063569A1
公开(公告)日：2012-03-15
申请号：US13227517
申请日：2011-09-08
Applicant: Edwin G. Haas , Christopher Stelmach , Zhong Zhong
Inventor： Edwin G. Haas , Christopher Stelmach , Zhong Zhong
IPC: G21K1/06
CPC classification number: G21K1/06 , G21K2201/062 , G21K2201/064
Abstract: An x-ray focusing device and method for adjustably focusing x-rays in two orthogonal directions simultaneously. The device and method can be operated remotely using two pairs of orthogonal benders mounted on a rigid, open frame such that x-rays may pass through the opening in the frame. The added x-ray flux allows significantly higher brightness from the same x-ray source.
Abstract translation: 一种用于可同时在两个正交方向上可调整地聚焦X射线的X射线聚焦装置和方法。 该装置和方法可以使用安装在刚性开放框架上的两对正交弯曲器远程操作，使得X射线可以穿过框架中的开口。 添加的X射线通量允许来自相同x射线源的明显更高的亮度。
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公开(公告)号：US08121258B2
公开(公告)日：2012-02-21
申请号：US12667464
申请日：2008-07-02
Applicant: Peter Hoghoj , Pascal Boulee , Paraskevi Ntova , Sergio Rodrigues
Inventor： Peter Hoghoj , Pascal Boulee , Paraskevi Ntova , Sergio Rodrigues
IPC: H01J35/10
CPC classification number: H01J35/10 , B82Y10/00 , G21K2201/061 , G21K2201/064 , H01J35/14 , H01J35/20
Abstract: The invention relates to X-ray analytical instruments (RX), more precisely a device for providing a high energy X-ray beam, typically above 4 keV, for X-ray analysis applications. The device comprises an X-ray tube with a turning anode and an X-ray lens for shaping the beam.
Abstract translation: 本发明涉及X射线分析仪器（RX），更准确地说，一种用于提供通常高于4keV的高能X射线束用于X射线分析应用的装置。 该装置包括具有转向阳极的X射线管和用于使束成形的X射线透镜。
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38.发明申请公开(公告)号：US20110317814A1
公开(公告)日：2011-12-29
申请号：US12823503
申请日：2010-06-25
Applicant: BORIS VERMAN
Inventor： BORIS VERMAN
IPC: G21K1/06
CPC classification number: G21K1/062 , B82Y10/00 , G21K1/04 , G21K2201/064 , G21K2201/067
Abstract: An x-ray optical system includes a multiple corner optic assembly including an adjustable aperture assembly located in close proximity to the optic assembly. The adjustable aperture assembly enables a user to easily and effectively adjust the convergence of an incident beam of x-rays or the optic focal spot size. The adjustable aperture assembly may further enable a user to condition x-rays of one wavelength and block x-rays of another wavelength and thereby reduce the amount of background radiation exhibited from x-rays of more than one wavelength.
Abstract translation: X射线光学系统包括多角度光学组件，其包括位于光学组件附近的可调节光圈组件。 可调孔径组件使得用户能够容易且有效地调整入射光束的X射线或光焦点尺寸的会聚。 可调整孔径组件还可以使用户能够调节一个波长的x射线并阻挡另一个波长的X射线，从而减少从多于一个波长的X射线显示的背景辐射的量。
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公开(公告)号：US20110188636A1
公开(公告)日：2011-08-04
申请号：US12699493
申请日：2010-02-03
Applicant: Boris Verman , Michael Young , Licai Jiang
Inventor： Boris Verman , Michael Young , Licai Jiang
CPC classification number: G21K1/06 , B82Y10/00 , G21K2201/061 , G21K2201/064 , G21K2201/067
Abstract: A multi-beam x-ray system includes an x-ray source which emits x-rays and a housing with a first part and a second part. The second part is moveable relative to the first part and includes a plurality of optics of different performance characteristics. Each optic, through the movement of the second part relative to the first part, is positioned to a working position so that the optic receives the x-rays from the x-ray source and directs the x-rays with the desired performance attributes to a desired location.
Abstract translation: 多光束X射线系统包括发射x射线的X射线源和具有第一部分和第二部分的壳体。 第二部分可相对于第一部分移动，并且包括具有不同性能特征的多个光学元件。 每个光学元件通过第二部分相对于第一部分的移动被定位到工作位置，使得光学器件接收来自x射线源的x射线，并将具有所需性能属性的x射线引导到 理想位置。
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公开(公告)号：US07986455B2
公开(公告)日：2011-07-26
申请号：US12188603
申请日：2008-08-08
Applicant: Torsten Feigl , Nicolas Benoit , Sergiy Yulin , Nobert Kaiser
Inventor： Torsten Feigl , Nicolas Benoit , Sergiy Yulin , Nobert Kaiser
CPC classification number: G02B5/0891 , B82Y10/00 , G21K1/062 , G21K2201/061 , G21K2201/064 , G21K2201/067
Abstract: A multilayer mirror includes a layer sequence arranged on a substrate and a plurality of layer pairs. Each layer pair includes a first layer composed of a first material and a second layer composed of a second material. The first layers and the second layers each have a thickness of more than 2 nm, and the first material or the second material is a silicon boride or a molybdenum nitride.
Abstract translation: 多层反射镜包括布置在基板和多个层对上的层序列。 每个层对包括由第一材料构成的第一层和由第二材料构成的第二层。 第一层和第二层各自具有大于2nm的厚度，并且第一材料或第二材料是硅化硼或氮化钼。
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