IMAGE SENSOR APPARATUS
    35.
    发明申请
    IMAGE SENSOR APPARATUS 审中-公开
    图像传感器装置

    公开(公告)号:US20110278435A1

    公开(公告)日:2011-11-17

    申请号:US13143786

    申请日:2009-01-09

    Inventor: Yoshiyuki Okuda

    CPC classification number: H01L27/14665 H01J40/00 H04N5/32 H04N5/357

    Abstract: An image sensor comprises a photoelectric-conversion-film current detector which detects a photoelectric conversion film current produced by combination of holes generated in a photoelectric conversion film with electrons supplied from an electron supplying source array to the photoelectric conversion film; a plurality of integrators which sequentially perform temporal integration on the photoelectric conversion film current during respective corresponding pixel periods during which electrons are supplied to said pixel areas, so as to generate integral signals; and sampling means which samples the integral signals of the plurality of integrators in each of the pixel periods to generate an image signal.

    Abstract translation: 图像传感器包括光电转换膜电流检测器,该光电转换膜电流检测器检测由光电转换膜中产生的空穴与从电子供给源阵列供应的电子与光电转换膜组合产生的光电转换膜电流; 多个积分器,其在将电子提供给所述像素区域的各个对应的像素周期期间顺序地对光电转换膜电流执行时间积分,以便产生积分信号; 以及采样装置,其在每个像素周期中对多个积分器的积分信号进行采样以产生图像信号。

    Photodiode
    36.
    发明授权
    Photodiode 失效
    光电二极管

    公开(公告)号:US4614871A

    公开(公告)日:1986-09-30

    申请号:US666990

    申请日:1984-10-31

    Inventor: John N. Driscoll

    CPC classification number: G01N30/74 H01J40/00

    Abstract: A non-evacuated photodiode for detecting far-uv radiation. The photocathode is a cylindrical element surrounded by an annular anode. The photocathode is constructed of a metal (e.g., nickel) that emits electrons only in response to far-uv radiation of 140 nanometer or shorter wavelengths. A window (e.g., magnesium fluoride) is positioned at the entrance to the photodiode, to filter out far-uv radiation with wavelengths shorter than about 100 nanometers. The window and photocathode material serve to make the photodiode sensitive to radiation in a wavelength range to greater than 100 to 140 nanometers. A high-temperature perfluoroethylene material is used as an insulating layer for spacing the window from the anode and for spacing the anode from the photocathode. The photodiode is used in a gas chromatography detector.

    Abstract translation: 用于检测远紫外辐射的非抽真空光电二极管。 光电阴极是由环形阳极包围的圆柱形元件。 光电阴极由仅响应于140纳米或更短波长的远紫外辐射而发射电子的金属(例如镍)构成。 窗口(例如氟化镁)位于光电二极管的入口处,以过滤出波长短于约100纳米的远紫外辐射。 窗口和光电阴极材料用于使光电二极管对波长范围大于100至140纳米的辐射敏感。 使用高温全氟乙烯材料作为将阳极与阳极间隔开并将阳极与光电阴极间隔开的绝缘层。 光电二极管用于气相色谱检测器。

Patent Agency Ranking