公开(公告)号：US12174061B2

公开(公告)日：2024-12-24

申请号：US18543368

申请日：2023-12-18

Applicant: Lutron Technology Company LLC

Inventor： James P. Steiner ,  Greg Edward Sloan ,  Nathan A. Boring

IPC: G01J1/02 ,  G01J1/16 ,  G01J1/32 ,  G01J1/44 ,  H05B47/10 ,  H05B47/11 ,  H05B47/19

Abstract: A wireless battery-powered daylight sensor for measuring a total light intensity in a space is operable to transmit wireless signals using a variable transmission rate that is dependent upon the total light intensity in the space. The sensor comprises a photosensitive circuit, a wireless transmitter for transmitting the wireless signals, a controller coupled to the photosensitive circuit and the wireless transmitter, and a battery for powering the photosensitive circuit, the wireless transmitter, and the controller. The photosensitive circuit is operable to generate a light intensity control signal in response to the total light intensity in the space. The controller transmits the wireless signals in response to the light intensity control signal using the variable transmission rate that is dependent upon the total light intensity in the space. The variable transmission rate may be dependent upon an amount of change of the total light intensity in the space. In addition, the variable transmission rate may be further dependent upon a rate of change of the total light intensity in the space.

公开(公告)号：US20240413824A1

公开(公告)日：2024-12-12

申请号：US18439641

申请日：2024-02-12

Applicant: PSIQUANTUM CORP.

Inventor： Faraz NAJAFI ,  Qiaodan JIN STONE

IPC: H03K19/195 ,  G01J1/44 ,  H10N60/30 ,  H10N60/84

Abstract: An example circuit includes a superconducting component having a plurality of narrow portions and a plurality of wide portions. The example circuit further includes a plurality of photon detector components, each photon detector component coupled to a corresponding narrow portion of the plurality of narrow portions and configured to provide an output that causes the corresponding narrow portion to transition from a superconducting state to a non-superconducting state. The example circuit also includes an output component coupled to the superconducting component, the output component configured to determine a number of the plurality of narrow portions of the superconducting component that are in the non-superconducting state.

公开(公告)号：US20240413253A1

公开(公告)日：2024-12-12

申请号：US18812076

申请日：2024-08-22

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Dan LUO ,  Tatsuki NISHINO

IPC: H01L31/02 ,  G01J1/44 ,  G01S7/4865 ,  H01L31/107

Abstract: A light detecting device includes first pixel circuitry including a first avalanche photodiode, and second pixel circuitry including a second avalanche photodiode, a first delay circuit including an input coupled to a cathode of the second avalanche photodiode, a first circuit including a first input coupled to the cathode of the second avalanche photodiode, and a second input coupled to an output of the first delay circuit. The light detecting device includes a control circuit coupled to an output of the first circuit and configured to control a potential of an anode of the first avalanche photodiode based on the output of the first circuit. The control circuit is configured to control a potential of an anode of the second avalanche photodiode based on the output of the first circuit.

公开(公告)号：US12163830B2

公开(公告)日：2024-12-10

申请号：US18401990

申请日：2024-01-02

Applicant: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED

Inventor： Thomas Frach ,  Torsten Solf ,  Dennis Groben

IPC: G01J1/44 ,  H03K5/24 ,  H03K5/26

Abstract: The present application relates generally to silicon photomultiplier (SiPM) detector arrays. In one aspect, there is a system including an array of cells each including a single-photon avalanche diode (SPAD) reverse-biased above a breakdown voltage of the SPAD. The system may further include a trigger network configured to generate pulses on a trigger line in response to SPADs of the array undergoing breakdown. The system may still further include a pulse-width filter configured to block pulses on the trigger line whose pulse width is less than a threshold width.

公开(公告)号：US12152936B2

公开(公告)日：2024-11-26

申请号：US18331035

申请日：2023-06-07

Applicant: Quantum-Si Incorporated

Inventor： Eric A. G. Webster ,  Todd Rearick ,  Thomas Raymond Thurston

IPC: G01J1/44 ,  B01J19/00 ,  H01L27/146 ,  H01L27/148

Abstract: Described herein are techniques that improve the collection and readout of charge carriers in an integrated circuit. Some aspects of the present disclosure relate to integrated circuits having pixels with a plurality of charge storage regions. Some aspects of the present disclosure relate to integrated circuits configured to substantially simultaneously collect and read out charge carriers, at least in part. Some aspects of the present disclosure relate to integrated circuits having a plurality of pixels configured to transfer charge carriers between charge storage regions within each pixel substantially at the same time. Some aspects of the present disclosure relate to integrated circuits having three or more sequentially coupled charge storage regions. Some aspects of the present disclosure relate to integrated circuits capable of increased charge transfer rates. Some aspects of the present disclosure relate to techniques for manufacturing and operating integrated circuits according to the other techniques described herein.

公开(公告)号：US20240385320A1

公开(公告)日：2024-11-21

申请号：US18429644

申请日：2024-02-01

Applicant: Waymo LLC

Inventor： Pierre-Yves Droz ,  Blaise Gassend ,  Caner Onal ,  David Hutchison

IPC: G01S17/08 ,  G01J1/04 ,  G01J1/42 ,  G01J1/44 ,  G01J3/02 ,  G01S7/481 ,  G01S7/486 ,  G01S7/4863 ,  G01S17/10 ,  G01S17/42

Abstract: The present disclosure relates to limitation of noise on light detectors using an aperture. One example embodiment includes a system. The system includes a lens disposed relative to a scene and configured to focus light from the scene onto a focal plane. The system also includes an aperture defined within an opaque material disposed at the focal plane of the lens. The aperture has a cross-sectional area. In addition, the system includes an array of light detectors disposed on a side of the focal plane opposite the lens and configured to intercept and detect diverging light focused by the lens and transmitted through the aperture. A cross-sectional area of the array of light detectors that intercepts the diverging light is greater than the cross-sectional area of the aperture.

公开(公告)号：US20240379715A1

公开(公告)日：2024-11-14

申请号：US18686815

申请日：2022-03-11

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Satoe MIYATA

IPC: H01L27/146 ,  G01J1/44 ,  H04N25/77 ,  H04N25/79

Abstract: A light detection device capable of relaxing an electric field at an interface between an insulating film and a semiconductor substrate. The present technology includes a semiconductor substrate, a first trench and a second trench each having a lattice shape and provided on a first surface of the semiconductor substrate, an insulating film covering inner side surfaces of the first and second trenches and the first surface, an anode electrode embedded in the first trench, P type, P+ type, and N+ type semiconductor regions, a cathode contact in an element region, and a cathode electrode. The insulating film includes at least a first region and a second region. The second region includes a portion at a depth at which a distance between a third semiconductor region and a first electrode is minimized. A dielectric constant of the second region is lower than a dielectric constant of the first region.

公开(公告)号：US12140707B2

公开(公告)日：2024-11-12

申请号：US17274914

申请日：2019-09-09

Applicant: The University Court of the University of Glasgow ,  Heriot-Watt University

Inventor： Douglas John Paul ,  Derek Dumas ,  Jaroslaw Kirdoda ,  Ross W. Millar ,  Muhammad M. Mirza ,  Gerald S. Buller ,  Peter Vines ,  Kateryna Kuzmenko

IPC: H01L31/107 ,  G01J1/44 ,  G01S7/4863 ,  H01L31/18

Abstract: A single photon avalanche diode (SPAD) device is presented. The SPAD device comprising: a Si-based avalanche layer formed over an n-type semiconductor contact layer; a p-type charge sheet layer formed in or on the avalanche layer, the p-type charge sheet layer having an in-plane width; a Ge-based absorber layer, formed over the charge sheet layer and/or the avalanche layer, and overlapping the charge sheet layer, the Ge-based absorber layer having an in-plane width; wherein, at least in one in-plane direction, the in-plane width of the Ge-based absorber layer is greater than the in-plane width of the p-type charge sheet layer.

公开(公告)号：US12135291B2

公开(公告)日：2024-11-05

申请号：US18225594

申请日：2023-07-24

Applicant: Beckman Coulter, Inc.

Inventor： Brian Kozicki ,  Creigh Thompson ,  Richard Wolf ,  Laura Holmes ,  David Sorrentino

IPC: G01N21/27 ,  G01J1/44 ,  G01N21/76

Abstract: Assays (100) may be performed with a luminometer (400) having a chassis (405) that may include a reaction vessel chamber (610). The luminometer (400) may also include a light passage (640) that intersects the reaction vessel chamber (610). The luminometer (400) may also include a cap (415) that, when in a closed configuration, prevents light emitted by external sources from entering the reaction vessel chamber (610) and from entering the light passage (640). The cap (415) may provide access to the reaction vessel chamber (610) when in an open configuration. The luminometer (400) may also include a calibration light source (460) optically coupled to one end of the light passage (640) and a light detector (630) optically coupled to another end of the light passage (640). The light detector (630) may include a sensing element for receiving light from the light passage (640).

公开(公告)号：US20240361180A1

公开(公告)日：2024-10-31

申请号：US18139241

申请日：2023-04-25

Applicant: Avago Technologies International Sales Pte. Limited

Inventor： Junjie LU ,  Jing GUO ,  Leon Samuel WANG ,  Xiaofeng LIN ,  Xicheng JIANG

IPC: G01J1/44 ,  H03H11/04

CPC classification number: G01J1/44 ,  H03H11/04 ,  G01J2001/444

Abstract: An apparatus includes a first circuit that has a photodetector. The photodetector is reverse-biased by a reverse-bias voltage. A common mode voltage is added to the reverse-bias voltage to provide an offset to the photodetector voltage. A second circuit is coupled to the first circuit to provide the common mode voltage for the first circuit. A third circuit is coupled to the second circuit that includes a first voltage source and a second voltage source having opposite voltages equal to half of the reverse-bias voltage. Each one of the first voltage source and the second voltage source are coupled between separate input and output nodes of input and output ports of the third circuit. The first voltage source and the second voltage source provide the reverse-bias voltage to the first circuit to reverse-bias the photodetector. The third circuit provides a photodetector current at an output of the third circuit.