公开(公告)号：US06433348B1

公开(公告)日：2002-08-13

申请号：US09625132

申请日：2000-07-25

Applicant: Fayez E. Abboud ,  Jan M. Chabala

Inventor： Fayez E. Abboud ,  Jan M. Chabala

IPC: H01J37302

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/30488

Abstract: A scanning lithography tool exposes a medium in a raster scan. The raster scan is a multi-pass scan in which the shape of the beam, while fixed for any one pass, is altered between passes. Thus, certain pixels are exposed in one or more scans using a Gaussian (round) beam while other pixels are exposed in separate scans using, for instance, a shaped (e.g., square or rectangular) shaped beam. Beam shape here refers to the cross-sectional shape of the beam as incident on the medium. This process, especially when the shaped beam is applied at the corners and slanted edges of a feature being exposed, has been found to substantially reduce the problem of edge blur otherwise typical of raster scan lithography. This process is applicable to both electron beam and laser beam raster scanning lithography.

Abstract translation: 扫描光刻工具在光栅扫描中曝光介质。 光栅扫描是一种多遍扫描，其中在通过之间改变光束的形状，同时固定任何一个通过。 因此，某些像素使用高斯（圆形）光束在一次或多次扫描中曝光，而其他像素使用例如成形（例如，正方形或矩形）形状的光束在单独的扫描中曝光。 梁的形状是指入射在介质上的梁的横截面形状。 这个过程，特别是当成形光束被施加在被曝光的特征的拐角和倾斜边缘时，已经发现基本上减少了光栅扫描光刻的其它典型的边缘模糊的问题。 该过程适用于电子束和激光束光栅扫描光刻。

公开(公告)号：US06259106B1

公开(公告)日：2001-07-10

申请号：US09226779

申请日：1999-01-06

Applicant: Volker Boegli ,  Stephen A. Rishton ,  Lee H. Veneklasen

Inventor： Volker Boegli ,  Stephen A. Rishton ,  Lee H. Veneklasen

IPC: H01J37302

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F7/70058 ,  G03F7/70375 ,  G03F7/70425 ,  G03F7/70483 ,  H01J37/3023 ,  H01J37/3174 ,  H01J2237/30488 ,  H01J2237/31776

Abstract: A converter for lithography which generates signals that control a shaping of an electron (or other energy) beam and which includes a translator that translates shape data into shape and position signals, and translates duration information into a duration signal. The converter also includes a retrograde scan circuit coupled to the translator that provides a retrograde signal that adjusts the position signal to offset a raster scan movement of the beam. The shape signals control the shaping of the beam, the position signal specifies a position of the beam for writing the shape on a substrate, and the duration signal specifies a duration of exposure of the beam on the substrate.

Abstract translation: 用于光刻的转换器，其生成控制电子（或其他能量）光束的成形的信号，并且包括将形状数据转换成形状和位置信号的转换器，并将持续时间信息转换为持续时间信号。 转换器还包括耦合到转换器的逆行扫描电路，其提供逆行信号，其调整位置信号以偏移光束的光栅扫描运动。 形状信号控制光束的成形，位置信号指定用于将形状写入衬底的光束的位置，并且持续时间信号指定光束在衬底上的曝光持续时间。

公开(公告)号：US06246065B1

公开(公告)日：2001-06-12

申请号：US09145647

申请日：1998-09-02

Applicant: Susumu Goto

Inventor： Susumu Goto

IPC: H01J37302

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3174 ,  H01J2237/063

Abstract: This invention provides an electron beam projection exposure apparatus which can obtain a large irradiation width while maintaining an electron beam intensity required for exposure. An electron beam emitted by an electron gun (1) is transmitted through a condenser lens (2) and field lens (3), and illuminates a mask (4). The electron beam transmitted through the mask (4) is imaged and irradiated onto a wafer (7) via reduction projection lenses (5, 6), thus forming a pattern on the mask (4) on the wafer (7) by exposure. The electron gun (1) has an electron source, an electron emission surface of which has a circularly recessed central portion, and a ring-shaped electron beam emitted by the peripheral portion of the electron emission surface is used in exposure.

Abstract translation: 本发明提供一种能够在保持曝光所需的电子束强度的同时获得大的照射宽度的电子束投影曝光装置。 由电子枪（1）发射的电子束通过聚光透镜（2）和场透镜（3）透射，照射掩模（4）。 通过掩模（4）透射的电子束被成像并经由还原投影透镜（5,6）照射到晶片（7）上，从而通过曝光在晶片（7）上的掩模（4）上形成图案。 电子枪（1）具有电子源，其电子发射表面具有圆形凹入的中心部分，并且在曝光期间使用由电子发射表面的周边部分发射的环形电子束。

公开(公告)号：US06242751B1

公开(公告)日：2001-06-05

申请号：US09353586

申请日：1999-07-15

Applicant: Akio Takemoto ,  Yoshihisa Ooaeh ,  Tomohiko Abe ,  Hiroshi Yasuda ,  Takamasa Satoh ,  Hideki Nasuno ,  Hidefumi Yabara ,  Kenichi Kawakami ,  Kiichi Sakamoto ,  Tomohiro Sakazaki ,  Isamu Seto ,  Masami Takigawa ,  Tatsuro Ohkawa

Inventor： Akio Takemoto ,  Yoshihisa Ooaeh ,  Tomohiko Abe ,  Hiroshi Yasuda ,  Takamasa Satoh ,  Hideki Nasuno ,  Hidefumi Yabara ,  Kenichi Kawakami ,  Kiichi Sakamoto ,  Tomohiro Sakazaki ,  Isamu Seto ,  Masami Takigawa ,  Tatsuro Ohkawa

IPC: H01J37302

CPC classification number: H01J37/147 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/21 ,  H01J37/3045 ,  H01J37/3174 ,  H01J2237/024 ,  H01J2237/1502 ,  H01J2237/1504 ,  H01J2237/216 ,  H01J2237/30472

Abstract: A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.

Abstract translation: 通过将晶片引导到晶片，通过偏转器偏转的带电粒子束将晶片暴露于带电粒子束的方法包括以下步骤：在不同的高度处布置多个第一标记，将带电粒子束聚焦在每个 通过使用设置在偏转器上方的聚焦线圈的第一标记，获得每个第一标记的聚焦距离，获得每个第一标记的偏转效率校正系数，并且使用焦距的线性函数来近似偏转 - 效率校正系数，以获得针对焦距的任意值的偏转效率校正系数。 还提出了一种用于执行该方法的装置。

公开(公告)号：US06229149B1

公开(公告)日：2001-05-08

申请号：US09482018

申请日：2000-01-13

Applicant: Hiroyuki Itoh

Inventor： Hiroyuki Itoh

IPC: H01J37302

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31776

Abstract: It is an object of the present invention to reduce a number of deflection awaiting and a connection error between shots by scanning and exposing a formed beam having a large area. To achieve the object, a continuous scanning deflector and a scan limiter are added to a variable forming type electron beam column and the drawing is performed such that a state in which the electron beam is limited by the scan limiter is continuous to a state in which the electron beam is irradiated on a face of a sample. According to this structure, the number of deflection awaiting and the connection error between shots are reduced and further, a high-speed and highly accurate drawing of a 45° slanted figure is made possible.

Abstract translation: 本发明的目的是通过扫描和曝光具有大面积的成形光束来减少等待的偏转次数和拍摄之间的连接误差。 为了实现该目的，将连续的扫描偏转器和扫描限制器添加到可变形成型电子束柱，并且进行绘图，使得电子束被扫描限制器限制的状态连续到其中 电子束照射在样品的表面上。 根据该结构，能够减少等待时的偏转次数和拍摄间的连接误差，进一步提高45°斜面的高精度和高精度的绘图。