Abstract:
A semiconductor package has a sub-assembly unit comprising a lead frame bonded onto a metal support by a composite glass frit layer on the peripheral parts of the support, a semiconductor device is bonded to the support, or to an intermediate member comprising part of the support, and a metal capping member is secured to the lead frame by an adhesive coating on a glass frit base layer on the capping member.
Abstract:
A conductive hermetic sealing cover for a container is fabricated by disposing the cover with a superimposed preformed heat-fusible conductive ring having outer dimensions similar to those of the cover in a shallow cavity of a nonconductive supporting member, the cavity having dimensions only slightly larger than those of the cover to secure registration between the ring and the periphery of the cover. A plurality of pairs of spaced electrodes are resiliently engaged with the ring with substantially equal contact pressures and a separate pulse of current is passed between the electrodes of each pair and through the ring and the cover, thereby producing an effective spot weld between the ring and the cover adjacent each of the electrodes. The term ''''ring'''' is used herein and in the appended claims in its generic sense to include a closed loop of conductive material of any configuration corresponding to the periphery of the cover, usually round or rectangular. The cover so fabricated is then applied to seal a container consisting of a body having a cavity therein by assembling the cover on the body with the sealing ring in contact with the body surrounding the cavity and then heating the assembly to a temperature sufficient to fuse the ring to the cover and to the body.
Abstract:
This disclosure is concerned with electronic components having improved ionic stability. The improved stability is achieved by the doping of silicon oxide films and layers in the component. Suitable doping materials are selected from a group of material having divalent large ionic radii atoms.
Abstract:
A semiconductive wafer is selectively protected and etched so that a grid of intersecting grooves is formed on one or both major surfaces. The grooves extend below junction depth. Oxide lip portions overhanging the grooves may be removed and the grooves may be treated to enhance wettability. A passivant is then selectively electrophoretically deposited into the grooves. Where glass is employed the passivant it is fired after deposition. The wafer may be subdivided into pellets before or after contacts are applied. A pliant supplemental passivant encapsulates the semiconductive pellet, and a casement is molded thereabout to complete the device. One semiconductive element that may be obtained by the passivation process is characterized by a passivant coating on a beveled periphery that progressively increases in thickness as it approaches a major surface intersecting the beveled periphery.
Abstract:
A METHOD OF HERMETICALLY ENCAPSULATING ELECTRONIC COMPONENTS COMPRISING COATING LESS THAN ALL OF THE SURFACES WITH A FIRST REFRACTORY MATERIAL AND FRING THE COMPONENT TO GLAZE THE FIRST REFRACTORY MATERIAL; AND, COATING THE REMAINING SURFACES WITH A SECOND REFRACTORY MATERIAL HAVING A LOWER MELTING TEMPERATURE THAN THE FIRST REFRACTORY MATERIAL AND AGAIN FIRING THE COMPONENT TO GLAZE THE SECOND REFRACTORY MATERIAL.