Method of fabricating an hermetically sealed container
    35.
    发明授权
    Method of fabricating an hermetically sealed container 失效
    制造密封密封容器的方法

    公开(公告)号:US3823468A

    公开(公告)日:1974-07-16

    申请号:US25739072

    申请日:1972-05-26

    Applicant: HASCOE N

    Inventor: HASCOE N

    Abstract: A conductive hermetic sealing cover for a container is fabricated by disposing the cover with a superimposed preformed heat-fusible conductive ring having outer dimensions similar to those of the cover in a shallow cavity of a nonconductive supporting member, the cavity having dimensions only slightly larger than those of the cover to secure registration between the ring and the periphery of the cover. A plurality of pairs of spaced electrodes are resiliently engaged with the ring with substantially equal contact pressures and a separate pulse of current is passed between the electrodes of each pair and through the ring and the cover, thereby producing an effective spot weld between the ring and the cover adjacent each of the electrodes. The term ''''ring'''' is used herein and in the appended claims in its generic sense to include a closed loop of conductive material of any configuration corresponding to the periphery of the cover, usually round or rectangular. The cover so fabricated is then applied to seal a container consisting of a body having a cavity therein by assembling the cover on the body with the sealing ring in contact with the body surrounding the cavity and then heating the assembly to a temperature sufficient to fuse the ring to the cover and to the body.

    Abstract translation: 用于容器的导电气密密封盖是通过在不导电的支撑构件的浅空腔中设置具有与盖的外形尺寸相似的外部尺寸的叠置的预制热熔导电环来制造的,该空腔的尺寸仅略大于 盖子上的那些,以确保环和盖的周边之间的配准。 多对隔开的电极与环具有大致相等的接触压力弹性地接合,并且在每对的电极之间通过单独的电流脉冲通过环和盖,从而在环和环之间产生有效的点焊 邻近每个电极的盖。 本文和所附权利要求书中术语“环”在其一般意义上使用包括通常为圆形或矩形的对应于盖的周边的任何构造的导电材料的闭环。 然后将如此制造的盖子用于通过将主体上的盖与密封环组装在一起而密封容器,该容器包括腔体,密封环与围绕空腔的主体接触,然后将组件加热至足以熔化 环到盖子和身体。

    Semiconductor passivating process and product
    37.
    发明授权
    Semiconductor passivating process and product 失效
    半导体钝化工艺和产品

    公开(公告)号:US3644801A

    公开(公告)日:1972-02-22

    申请号:US3644801D

    申请日:1971-01-21

    Applicant: GARY S SHELDON

    Inventor: SHELDON GARY S

    Abstract: A semiconductive wafer is selectively protected and etched so that a grid of intersecting grooves is formed on one or both major surfaces. The grooves extend below junction depth. Oxide lip portions overhanging the grooves may be removed and the grooves may be treated to enhance wettability. A passivant is then selectively electrophoretically deposited into the grooves. Where glass is employed the passivant it is fired after deposition. The wafer may be subdivided into pellets before or after contacts are applied. A pliant supplemental passivant encapsulates the semiconductive pellet, and a casement is molded thereabout to complete the device. One semiconductive element that may be obtained by the passivation process is characterized by a passivant coating on a beveled periphery that progressively increases in thickness as it approaches a major surface intersecting the beveled periphery.

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