公开(公告)号：US3632434A

公开(公告)日：1972-01-04

申请号：US3632434D

申请日：1969-01-21

Applicant: JERALD L HUTSON

Inventor： HUTSON JERALD L

IPC: H01L21/316 ,  H01L23/31 ,  B44D1/18 ,  H01L1/10

CPC classification number: H01L21/316 ,  H01L23/3157 ,  H01L2924/0002 ,  Y10S148/118 ,  H01L2924/00

Abstract: A process for glass passivating silicon semiconductor junctions comprises the steps of coating a slice of semiconductor material containing exposed rectifying junctions in a liquid mixture of powdered glass and an organic component, spinning the slice to remove excess mixture, but leave remaining on the slice a thin uniform film of the mixture, heating the slice in an oxygen atmosphere to form a very thin silicon dioxide layer on the surface of the slice while burning off the organic component to leave the glass in a highly compacted, dry powder form tightly adhering to the slice, and again heating the slice in a dry, substantially oxygen-free atmosphere at a temperature sufficient to fuse the glass powder together and to the slice.

Abstract translation: 用于玻璃钝化硅半导体结的方法包括以下步骤：在玻璃粉末和有机组分的液体混合物中涂覆含有暴露的精馏结的半导体材料片，旋转切片以除去过量的混合物，但留在切片上薄 混合物的均匀膜，在氧气气氛中加热切片以在切片的表面上形成非常薄的二氧化硅层，同时燃烧有机组分，使玻璃留下紧密粘附在切片上的高度紧密，干燥的粉末形式 ，并再次在干燥的，基本上无氧的气氛中加热切片，其温度足以将玻璃粉末熔合到切片上。

公开(公告)号：US3632433A

公开(公告)日：1972-01-04

申请号：US3632433D

申请日：1968-03-26

Applicant: HITACHI LTD

Inventor： TOKUYAMA TAKASHI ,  MORI TAKAAKI

IPC: H01L21/00 ,  H01L23/29 ,  H01L29/00 ,  H01L1/10 ,  H01L1/14

CPC classification number: H01L23/291 ,  H01L21/00 ,  H01L24/05 ,  H01L29/00 ,  H01L2224/04042 ,  H01L2224/48463 ,  H01L2224/8592 ,  H01L2924/12036 ,  H01L2924/14 ,  Y10T428/24917 ,  H01L2924/00

Abstract: A first insulating film of silicon dioxide is provided on the surface of a semiconductor device, and a second silicon dioxide layer containing uniformly a small amount of phosphorus is deposited from the vapor phase on said first insulating film, thereby realizing stable passivation of the electrical characteristics of said semiconductor device. The waterproof property and accurate etching of said films are also accomplished.

Abstract translation: 在半导体器件的表面上设置有二氧化硅的第一绝缘膜，并且从所述第一绝缘膜上的气相沉积含有少量均匀的磷的第二二氧化硅层，从而实现电特性的稳定钝化 的所述半导体器件。 还实现了所述膜的防水性能和精确蚀刻。

公开(公告)号：US3631589A

公开(公告)日：1972-01-04

申请号：US3631589D

申请日：1969-11-25

Applicant: WESTERN ELECTRIC CO

Inventor： GARCEAU WILLIAM J

IPC: C03C27/02 ,  H01J5/26 ,  H01L1/10

CPC classification number: C03C27/02 ,  H01J5/26 ,  H01J2893/0043 ,  H01L23/051 ,  H01L24/01 ,  Y10S65/11 ,  Y10T29/49171

Abstract: Method of hermetically sealing hard glass to metal as in the encapsulation of a semiconductor device wherein the glass and metal are assembled in loosely fitting relationship and placed in an oven. The assembly is then heated under nonoxidizing conditions at a first pressure. The nonoxidizing atmosphere is then evacuated to produce a second pressure and an oxygen containing gas is then introduced to produce a third pressure and to oxidize the metal when the temperature is increased to the range at which the metal oxidizes. The oxygen-containing atmosphere is then flushed out by introducing a nonoxidizing gas under pressure. The temperature is increased till the glass softens and seals with the metal. The sealed structure is then cooled.

Abstract translation: 将硬质玻璃与金属密封的方法如半导体器件的封装一样，其中玻璃和金属以松散配合的关系组装并放置在烘箱中。 然后将组件在非氧化条件下在第一压力下加热。 然后将非氧化气体抽真空以产生第二压力，然后引入含氧气体以产生第三压力，并且当温度升高到金属氧化的范围时氧化金属。 然后通过在压力下引入非氧化气体将含氧气体冲洗掉。 升温至玻璃软化并用金属密封。 然后将密封结构冷却。

公开(公告)号：US3621563A

公开(公告)日：1971-11-23

申请号：US3621563D

申请日：1968-04-19

Applicant: HUGHES AIRCRAFT CO

Inventor： GEE ALLEN

IPC: H01L23/051 ,  H01L23/16 ,  H01L23/31 ,  B01J17/00 ,  H01L1/10

CPC classification number: H01L23/16 ,  H01L23/051 ,  H01L23/3157 ,  H01L2924/0002 ,  Y10S228/903 ,  H01L2924/00

Abstract: METHOD OF PREVENTING TEMPERATURE-VOLTAGE DEGRADATION OF P-N JUNCTIONDIODES BY PACKAGING THE DIODE WITH A COMPOUND WHICH YIELDS PHOSPHOROUS PENTOXIDE UPON BEING HEATED.

公开(公告)号：US3606673A

公开(公告)日：1971-09-21

申请号：US3606673D

申请日：1968-08-15

Applicant: TEXAS INSTRUMENTS INC

Inventor： OVERMAN JAMES H

IPC: H01L23/48 ,  B29C43/00 ,  B29C45/00 ,  B29C45/02 ,  B29C45/14 ,  H01L21/00 ,  H01L21/56 ,  H01L23/31 ,  H01L23/433 ,  H01L23/495 ,  B01J17/00 ,  H01L1/10

CPC classification number: B29C45/14655 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49562 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/8592 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/181 ,  Y10T29/49121 ,  H01L2224/85 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A PLURALITY OF SEMICONDUCTOR DEVICES ARE ENCAPSULATED SIMULTANEOUSLY IN A THERMOSETTING PLASTIC BY A PROCESS THAT INCLUDES THE USE OF TRANSFER MOLDING TECHNIQUES. DISCRETE SEMICONDUCTOR DEVICES, SUCH AS TRANSISTORS, ARE STRIP MOLDED AS A UNIT AND SEPARATED AFTER THE THERMOSETTING PLASTIC HAS CURED. PRIOR TO THE MOLDING PROCESS, AN ARRAY OF LEAD WIRES INTERCONNECTED BY PARTIALLY SHEARED TIE-BARS ARE STAKED TO INDIVIDUAL HEAT SINKS ALSO FORMED IN A STRIP. A SEMICONDUCTOR DEVICE IS MOUNTED TO EACH OF THE INDIVIDUAL HEAT SINKS AND WHISKER LEAD WIRES ARE BONDED TO THE ACTIVE REGIONS OF THE DEVICE AND THE LEAD WIRES. TO PREVENT CONTAMINATION OF THE SEMICONDUCTOR JUNCTIONS WITH ATMOSPHERIC IMPURITIES, THE WAFERS ARE COATED WITH A PROTECTIVE MATERIAL. GROOVES ARE COINED INTO THE HEAT SINK TO LIMIT THE WAFER COATING MATERIAL TO A RESTRICTED AREA. AFTER THE STRIP MOLDING STEP HAS BEEN COMPLETED, THE INDIVIDUAL SEMICONDUCTOR DEVICES ARE SEPARATED BY CUTTING THE TIE-BARS AND SAWING THE INDIVIDUAL HEAT SINKS.

公开(公告)号：US3577633A

公开(公告)日：1971-05-04

申请号：US3577633D

申请日：1969-10-01

Applicant: HITACHI LTD

Inventor： HOMMA MAKOTO ,  SAITO TOSHIAKI

IPC: H01L23/051 ,  H01L23/24 ,  H01L23/433 ,  H01L23/495 ,  B01J17/00 ,  H01L1/10

CPC classification number: H01L23/4334 ,  H01L23/051 ,  H01L23/24 ,  H01L23/49537 ,  H01L23/49562 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/4823 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/16152 ,  Y10T29/49172 ,  H01L2224/45099

Abstract: A method of assembly of a transistor, wherein a lead support member and pairs of collector lead molds are punched in advance in a tape-shaped metal sheet; a lead support member corresponding to said lead support member and pairs of emitter-base lead molds are punched in another tape-shaped metal sheet; a collector electrode of a planar type transistor is put into contact with the center of said collector lead; the position of the end parts of the base and emitter leads with respect to the position of said collector lead is defined by piling up said two support members and thereby the end parts of said two leads are put into contact with said base and emitter electrodes of the transistor; all of said leads and electrodes corresponding thereto are coupled mutually by soldering; said transistor part is molded with resin; and said leads are removed from said respective support members.

公开(公告)号：US3528169A

公开(公告)日：1970-09-15

申请号：US3528169D

申请日：1969-01-23

Applicant: TEXAS INSTRUMENTS INC

Inventor： PERRIN WILLIAM P ,  GENTLE JOE

IPC: H01L23/045 ,  H01L23/26 ,  H01L23/42 ,  H01L1/10

CPC classification number: H01L23/26 ,  H01L23/045 ,  H01L23/42 ,  H01L24/48 ,  H01L2224/48137 ,  H01L2224/4823 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/16152 ,  Y10S228/903 ,  Y10T29/49117 ,  H01L2224/45099

公开(公告)号：US3524249A

公开(公告)日：1970-08-18

申请号：US3524249D

申请日：1967-10-05

Applicant: NIPPON ELECTRIC CO

Inventor： HAMADA TOSHIO ,  SATO KOZABURO

IPC: H01L21/50 ,  H01L23/495 ,  H01L1/10

CPC classification number: H01L21/50 ,  H01L23/49541 ,  H01L2924/0002 ,  Y10T29/49121 ,  H01L2924/00

公开(公告)号：US3435516A

公开(公告)日：1969-04-01

申请号：US3435516D

申请日：1967-01-13

Applicant: TEXAS INSTRUMENTS INC

Inventor： KILBY JACK S

IPC: H01L23/057 ,  H01L23/495 ,  H01L23/498 ,  H01L27/07 ,  H03K3/286 ,  H01L1/10

CPC classification number: H01L24/32 ,  H01L23/057 ,  H01L23/4951 ,  H01L23/49844 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0755 ,  H01L2224/32057 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/4911 ,  H01L2224/4917 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01047 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12036 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/16195 ,  H03K3/286 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/05599 ,  H01L2224/85399

公开(公告)号：US3429030A

公开(公告)日：1969-02-25

申请号：US3429030D

申请日：1965-10-23

Applicant: RCA CORP

Inventor： BELL MATTHEW M

IPC: H01L21/56 ,  H01L23/31 ,  H01L23/49 ,  H01L5/02 ,  B23P19/00 ,  H01L1/10

CPC classification number: H01L23/3107 ,  H01L21/56 ,  H01L24/48 ,  H01L2224/05644 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01079 ,  H01L2924/181 ,  Y10T29/49121 ,  Y10T29/49829 ,  H01L2924/00011 ,  H01L2924/00 ,  H01L2224/45099