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    Spatial absorptive and phase shift filter layer to reduce modal reflectivity for higher order modes in a vertical cavity surface emitting laser
    43.
    发明授权
    Spatial absorptive and phase shift filter layer to reduce modal reflectivity for higher order modes in a vertical cavity surface emitting laser 有权
    空间吸收和相移滤波器层，用于在垂直腔表面发射激光器中降低较高阶模的模态反射率

    公开(公告)号：US6144682A

    公开(公告)日：2000-11-07

    申请号：US183908

    申请日：1998-10-29

    Applicant: Decai Sun

    Inventor： Decai Sun

    IPC: H01S5/042 ,  H01S5/183 ,  H01S5/00

    CPC classification number: H01S5/18394 ,  H01S2301/166 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/18308 ,  H01S5/2063

    Abstract: A first, thicker, annular gallium arsenide semiconductor layer surrounds a second, thinner, circular gallium arsenide semiconductor layer in a vertical cavity surface emitting laser. The thinner circular gallium arsenide layer defines the output window for the laser cavity which matches the TEM.sub.00 fundamental mode of the light beam emitted by the active region of the VCSEL. The thicker annular gallium arsenide layer outside the output window of the thinner circular gallium arsenide layer provides modal reflectivity discrimination against high order transverse modes of the light beam emitted by the active region of the VCSEL.

    Abstract translation: 第一个较厚的环形砷化镓半导体层围绕垂直腔表面发射激光器中的第二个较薄的圆形砷化镓半导体层。 较薄的圆形砷化镓层限定了与VCSEL的有源区域发射的光束的TEM00基模相匹配的激光腔的输出窗口。 在较薄的环形砷化镓层的输出窗口外侧的较厚的环形砷化镓层提供了由VCSEL的有源区域发射的光束的高阶横向模式的模态反射率辨别。

    Deep native oxide confined ridge waveguide semiconductor lasers
    45.
    发明授权
    Deep native oxide confined ridge waveguide semiconductor lasers 失效
    深自然氧化物限制脊波导半导体激光器

    公开(公告)号：US6044098A

    公开(公告)日：2000-03-28

    申请号：US920444

    申请日：1997-08-29

    Applicant: Decai Sun

    Inventor： Decai Sun

    IPC: H01S5/00 ,  H01S5/10 ,  H01S5/22 ,  H01S5/227 ,  H01S3/19

    CPC classification number: H01S5/227 ,  H01S5/10 ,  H01S5/1071 ,  H01S5/2215 ,  H01S5/2275

    Abstract: A ridge waveguide semiconductor laser structure fabricated by etching and wet oxidation. The upper cladding layer is partially etched forming a ridge and a native oxide layer is wet oxidized from the remaining upper cladding layer and the active region outside the ridge. The deep native oxide layer provides strong optical confinement to the ridge waveguide. Alternately, the active region can be narrower than the ridge waveguide in the laser structure. The ridge waveguide semiconductor laser structures with native oxide layers can also be curved geometry lasers such as ring lasers.

    Abstract translation: 通过蚀刻和湿氧化制造的脊形波导半导体激光器结构。 上覆层被部分地蚀刻形成脊，并且自然氧化物层从剩余的上覆层和脊之外的有源区域被湿氧化。 深的天然氧化物层为脊形波导提供强烈的光学约束。 或者，有源区可以比激光结构中的脊波导窄。 具有自然氧化物层的脊形波导半导体激光器结构也可以是诸如环形激光器的弯曲几何形状的激光器。

    Process for preparing a semiconductor light-emitting device for mounting
    48.
    发明授权
    Process for preparing a semiconductor light-emitting device for mounting 有权
    制备用于安装的半导体发光装置的方法

    公开(公告)号：US08062925B2

    公开(公告)日：2011-11-22

    申请号：US11383522

    申请日：2006-05-16

    Applicant: Oleg Borisovich Shchekin ,  Xiaolin Sun ,  Decai Sun

    Inventor： Oleg Borisovich Shchekin ,  Xiaolin Sun ,  Decai Sun

    IPC: H01L21/00

    CPC classification number: H01L33/44 ,  H01L33/54 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/16

    Abstract: A process for preparing a semiconductor light-emitting device for mounting is disclosed. The light-emitting device has a mounting face for mounting to a sub-mount. The process involves treating at least one surface of the light-emitting device other than the mounting face to lower a surface energy of the at least one surface, such that when mounting the light-emitting device, an underfill material applied between the mounting face and the sub-mount is inhibited from contaminating the at least one surface.

    Abstract translation: 公开了一种用于制备用于安装的半导体发光器件的方法。 发光装置具有用于安装到副安装座的安装面。 该方法包括处理除了安装面以外的发光装置的至少一个表面以降低至少一个表面的表面能，使得当安装发光装置时，将底部填充材料施加在安装面和 防止子安装座污染至少一个表面。

    Light Emitting Device With Undoped Substrate And Doped Bonding Layer
    50.
    发明申请
    Light Emitting Device With Undoped Substrate And Doped Bonding Layer 审中-公开
    具有未掺杂衬底和掺杂粘合层的发光器件

    公开(公告)号：US20080224158A1

    公开(公告)日：2008-09-18

    申请号：US11860502

    申请日：2007-09-24

    Applicant: Decai Sun

    Inventor： Decai Sun

    IPC: H01L33/00 ,  H01L21/00

    CPC classification number: H01L33/38 ,  H01L33/005 ,  H01L33/20 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

    Abstract: A light emitting device having a stack of layers bonded to an undoped substrate with a doped layer between the stack of layers and the undoped substrate. The stack of layers include a layer of first conductivity type over the doped layer, an overlying light emitting layer and a layer of second conductivity type. In one embodiment, the doped substrate is grown on a sacrificial substrate along with the remaining stack of layers prior to bonding to the undoped substrate. Electrical contacts are coupled to device on a side opposite the undoped substrate. In one embodiment, the layers of first conductivity, the light emitting layer, and the layer of second conductivity are removed to expose the doped layer and a first electrical contact is coupled to the layer of first conductivity through the doped substrate, while a second electrical contact is coupled to the layer of second conductivity.

    Abstract translation: 一种发光器件，其具有一层层叠在一起的未掺杂衬底上，层之间具有掺杂层和未掺杂衬底。 层叠层包括在掺杂层上的第一导电类型的层，上覆的发光层和第二导电类型的层。 在一个实施例中，在结合到未掺杂的衬底之前，将掺杂衬底与剩余的层堆叠一起在牺牲衬底上生长。 电触点在与未掺杂的衬底相对的一侧耦合到器件。 在一个实施例中，去除第一导电层，发光层和第二导电层以暴露掺杂层，并且第一电接触通过掺杂衬底耦合到第一导电层，而第二电 接触耦合到第二导电层。

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