公开(公告)号：US20110233693A1

公开(公告)日：2011-09-29

申请号：US13128035

申请日：2009-11-25

Applicant: François Perruchot ,  Emmanuel Defay ,  Patrice Rey ,  Lianjun Liu ,  Sergio Pacheco

Inventor： François Perruchot ,  Emmanuel Defay ,  Patrice Rey ,  Lianjun Liu ,  Sergio Pacheco

IPC: H01L29/84 ,  H01L21/02

CPC classification number: B81B3/0072 ,  B81B2201/032 ,  H01L41/0933 ,  H01L41/094

Abstract: A micro or nano electromechanical transducer device formed on a semiconductor substrate comprises a movable structure which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure comprising at least one mechanical layer having a first thermal response characteristic and a first mechanical stress response characteristic, at least one layer of the actuating structure, the at least one layer having a second thermal response characteristic different to the first thermal response characteristic and a second mechanical stress response characteristic different to the first mechanical stress response characteristic, a first compensation layer having a third thermal response characteristic and a third mechanical stress characteristic, and a second compensation layer having a fourth thermal response characteristic and a fourth mechanical stress response characteristic. The first and second compensation layers are arranged to compensate a thermal effect produced by the different first and second thermal response characteristics of the mechanical structure and the at least one layer of the actuating structure such that movement of the movable structure is substantially independent of variations in temperature and to adjust a stress effect produced by the different first and second stress response characteristics of the mechanical structure and the at least one layer of the actuating structure such that the movable structure is deflected a predetermined amount relative to the substrate when the electromechanical transducer device is in an inactive state.

Abstract translation: 形成在半导体衬底上的微型或纳米机电换能器装置包括可移动结构，其被布置成响应于致动结构的致动而是可移动的。 可移动结构包括机械结构，其包括具有第一热响应特性和第一机械应力响应特性的至少一个机械层，所述致动结构的至少一层，所述至少一层具有与 第一热响应特性和与第一机械应力响应特性不同的第二机械应力响应特性，具有第三热响应特性和第三机械应力特性的第一补偿层，以及具有第四热响应特性的第二补偿层和 第四机械应力响应特性。 第一和第二补偿层布置成补偿由机械结构和致动结构的至少一个层的不同的第一和第二热响应特性产生的热效应，使得可移动结构的移动基本上与 并且调节由所述机械结构和所述致动结构的所述至少一个层的不同的第一和第二应力响应特性产生的应力效应，使得当所述机电换能器装置 处于非活动状态。

公开(公告)号：US20110221307A1

公开(公告)日：2011-09-15

申请号：US13128032

申请日：2009-11-25

Applicant: Lianjun Liu ,  Sergio Pacheco ,  Francois Perruchot ,  Emmanuel Defay ,  Patrice Rey

Inventor： Lianjun Liu ,  Sergio Pacheco ,  Francois Perruchot ,  Emmanuel Defay ,  Patrice Rey

IPC: H01L41/04

CPC classification number: B81B3/0072 ,  B81B2201/032 ,  H01L41/0933 ,  H01L41/094

Abstract: A micro or nano electromechanical transducer device formed on a semiconductor substrate comprises a movable structure which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure having at least one mechanical layer having a first thermal response characteristic, at least one layer of the actuating structure having a second thermal response characteristic different to the first thermal response characteristic, and a thermal compensation structure having at least one thermal compensation layer. The thermal compensation layer is different to the at least one layer and is arranged to compensate a thermal effect produced by the mechanical layer and the at least one layer of the actuating structure such that the movement of the movable structure is substantially independent of variations in temperature.

Abstract translation: 形成在半导体衬底上的微型或纳米机电换能器装置包括可移动结构，其被布置成响应于致动结构的致动而是可移动的。 可移动结构包括具有至少一个具有第一热响应特性的机械层的机械结构，至少一层致动结构具有不同于第一热响应特性的第二热响应特性，以及至少具有至少 一个热补偿层。 热补偿层不同于至少一个层，并且被布置成补偿由机械层和致动结构的至少一个层产生的热效应，使得可移动结构的运动基本上与温度变化无关 。

公开(公告)号：US20100029031A1

公开(公告)日：2010-02-04

申请号：US12488898

申请日：2009-06-22

Applicant: François Perruchot ,  Bernard Diem ,  Vincent Larrey ,  Laurent Clavelier ,  Emmanuel Defay

Inventor： François Perruchot ,  Bernard Diem ,  Vincent Larrey ,  Laurent Clavelier ,  Emmanuel Defay

IPC: H01L21/18

CPC classification number: B81C1/00507 ,  B81B2201/0271 ,  B81C2201/0115 ,  B81C2201/0136 ,  B81C2201/0177 ,  B81C2203/0136 ,  B81C2203/0145 ,  H03H3/0072 ,  H03H9/175 ,  H03H9/2436 ,  Y10S438/933

Abstract: The invention relates to a method of fabricating and electromechanical device on at least one substrate, the device including at least one active element and wherein the method comprises: a) making a heterogeneous substrate comprising a first portion, an interface layer, and a second portion, the first portion including one or more buried zones sandwiched between first and second regions formed in a first monocrystalline material, the first region extending to the surface of the first portion, and the second region extending to the interface layer, at least one said buried zone being made at least in part out of a second monocrystalline material so as to make it selectively attackable relative to the first and second regions; b) making openings from the surface of the first portion and through the first region, which openings open out to at least one said buried zone; and c) etching at least part of at least one buried zone to form at least one cavity so as to define at least one active element that is at least a portion of the second region between a said cavity and said interface layer; and wherein the first and second portions of the substrate are constituted respectively from first and second substrates that are assembled together by bonding, at least one of them including at least one said interface layer over at least a fraction of its surface.

Abstract translation: 本发明涉及在至少一个基板上制造和机电装置的方法，所述装置包括至少一个有源元件，并且其中所述方法包括：a）制造包含第一部分，界面层和第二部分 ，所述第一部分包括被夹在形成于第一单晶材料中的第一和第二区域之间的一个或多个掩埋区域，所述第一区域延伸到所述第一部分的表面，并且所述第二区域延伸到所述界面层，所述第二区域延伸至所述界面层， 区域至少部分地由第二单晶材料制成，以使其相对于第一和第二区域选择性地被破坏; b）从所述第一部分的表面和所述第一区域制造开口，所述第一区域开放到至少一个所述掩埋区域; 以及c）蚀刻至少一个掩埋区的至少一部分以形成至少一个空腔，以便限定至少一个有源元件，所述至少一个有源元件是所述空腔和所述界面层之间的所述第二区域的至少一部分; 并且其中所述基底的第一和第二部分分别由通过粘合而组装在一起的第一和第二基底构成，其中至少一个在其表面的至少一部分上包括至少一个所述界面层。

公开(公告)号：US20090317931A1

公开(公告)日：2009-12-24

申请号：US12488882

申请日：2009-06-22

Applicant: François Perruchot ,  Bernard Diem ,  Vincent Larrey ,  Laurent Clavelier ,  Emmanuel Defay

Inventor： François Perruchot ,  Bernard Diem ,  Vincent Larrey ,  Laurent Clavelier ,  Emmanuel Defay

IPC: H01L29/84

CPC classification number: B81C1/00238 ,  B81B2201/0271 ,  B81C1/00357 ,  B81C2201/0115 ,  B81C2201/014 ,  B81C2201/0191

Abstract: The invention relates to a method of fabricating an electromechanical device including an active element, wherein the method comprises the following steps:a) making a monocrystalline first stop layer on a monocrystalline layer of a first substrate;b) growing a monocrystalline mechanical layer epitaxially on said first stop layer out of at least one material that is different from that of the stop layer;c) making a sacrificial layer on said active layer out of a material that is suitable for being etched selectively relative to said mechanical layer;d) making a bonding layer on the sacrificial layer;e) bonding a second substrate on the bonding layer; andf) eliminating the first substrate and the stop layer to reveal the surface of the mechanical layer opposite from the sacrificial layer, the active element being made by at least a portion of the mechanical layer.

Abstract translation: 本发明涉及一种制造包括有源元件的机电装置的方法，其中该方法包括以下步骤：a）在第一衬底的单晶层上制备单晶第一阻挡层; b）在所述第一停止层上外延生长至少一种不同于所述停止层的材料的单晶机械层; c）在适合于相对于所述机械层选择性蚀刻的材料中在所述有源层上制造牺牲层; d）在牺牲层上形成结合层; e）在接合层上粘合第二衬底; 以及f）消除所述第一衬底和所述阻挡层以露出与所述牺牲层相对的所述机械层的表面，所述有源元件由所述机械层的至少一部分制成。