Coupler having reduction of reflections to light source
    41.
    发明申请
    Coupler having reduction of reflections to light source 审中-公开
    耦合器具有减少对光源的反射

    公开(公告)号:US20050013542A1

    公开(公告)日:2005-01-20

    申请号:US10620512

    申请日:2003-07-16

    CPC classification number: G02B6/4204 G02B6/4292

    Abstract: A coupler for coupling light between an optoelectronic element and an optical fiber. The coupler has a fiber stop that is made of a material that has an index of refraction that effectively matches the index of refraction of the optical fiber being coupled to the optoelectronic element. The fiber stop may be flat or rounded. It may be a discrete or molded part of the coupler assembly. The end of the fiber being stopped may be flat or rounded.

    Abstract translation: 用于在光电子元件和光纤之间耦合光的耦合器。 耦合器具有由具有有效地匹配耦合到光电子元件的光纤的折射率匹配的折射率的材料制成的光纤停止件。 纤维止动器可以是平的或圆形的。 它可以是耦合器组件的分立或模制部件。 停止的纤维的端部可以是平的或圆形的。

    Asymmetric DBR pairs combined with periodic and modulation doping to maximize conduction and reflectivity, and minimize absorption
    42.
    发明授权
    Asymmetric DBR pairs combined with periodic and modulation doping to maximize conduction and reflectivity, and minimize absorption 有权
    非对称DBR对与周期性和调制掺杂结合,以最大限度地提高传导和反射率,并使吸收最小化

    公开(公告)号:US08213474B2

    公开(公告)日:2012-07-03

    申请号:US11963365

    申请日:2007-12-21

    Abstract: An optical device for improving conduction and reflectivity and minimizing absorption. The optical device includes a first mirror comprising a first plurality of mirror periods designed to reflect an optical field at a predetermined wavelength, where the optical field has peaks and nulls. Each of the plurality of mirror periods includes a first layer of having a high carrier mobility, a second layer having lower carrier mobility, and a first compositional ramp between the first and second layers. The thicknesses of the first and second layers for at least a portion of the first plurality of mirror periods are established such that the nulls of the optical field occur within the first layer and not within the compositional ramp. At least the portion of the first layers within the first plurality of mirror periods include elevated doping concentrations at locations of the nulls of the optical field.

    Abstract translation: 用于改善传导和反射率并最小化吸收的光学装置。 该光学装置包括第一反射镜,该第一反射镜包括被设计成反射预定波长的光场的第一多个反射镜周期,其中光场具有峰值和零点。 多个反射镜周期中的每一个包括具有高载流子迁移率的第一层,具有较低载流子迁移率的第二层以及第一和第二层之间的第一组成斜面。 第一和第二层的厚度对于第一多个反射镜周期的至少一部分被建立为使得光场的零点发生在第一层内而不在组成斜坡内。 第一多个反射镜周期内的第一层的至少部分包括在光场的零点的位置处的升高的掺杂浓度。

    Optimizing VCSEL mirrors for improving temperature response
    43.
    发明授权
    Optimizing VCSEL mirrors for improving temperature response 有权
    优化VCSEL镜子以改善温度响应

    公开(公告)号:US07606282B2

    公开(公告)日:2009-10-20

    申请号:US11963315

    申请日:2007-12-21

    CPC classification number: H01S5/18369 H01S5/18372 H01S5/18394

    Abstract: Improved slope efficiency in a VCSEL can be accomplished by selecting particular mirror layer compositions and/or mirror layer configurations that minimize increased reflectivity in the top mirror and/or maximize increased reflectivity of the bottom mirror with increasing temperature. Improved reflectivity of the bottom mirror compared to the top mirror over a desired operating temperature range can be facilitated by (i) selecting mirror pairs for the bottom and/or top mirror that gives the bottom mirror pairs a greater increase in contrast ratio with increasing temperature compared to the top-mirror pairs, and/or (ii) including fewer mirror pairs in the bottom mirror than the number of mirror pairs that would give optimal reflectivity.

    Abstract translation: 可以通过选择使顶部反射镜中增加的反射率最小化和/或最大程度地提高底部反射镜随着温度升高的增加的反射率的特定镜面层组合物和/或镜面层构造来实现VCSEL中的改进的斜率效率。 可以通过(i)为底部和/或上部反射镜选择镜对来提高底部反射镜与顶部反射镜在所需工作温度范围内的反射率,从而使底部镜对对比度随着温度升高而增加。 与上镜对相比,和/或(ii)在底镜中包括较少的镜对,比将产生最佳反射率的镜对数多。

    OPTIMIZING VCSEL MIRRORS FOR IMPROVING TEMPERATURE RESPONSE
    44.
    发明申请
    OPTIMIZING VCSEL MIRRORS FOR IMPROVING TEMPERATURE RESPONSE 有权
    优化VCSEL MIRRORS改善温度响应

    公开(公告)号:US20090161714A1

    公开(公告)日:2009-06-25

    申请号:US11963315

    申请日:2007-12-21

    CPC classification number: H01S5/18369 H01S5/18372 H01S5/18394

    Abstract: Improved slope efficiency in a VCSEL can be accomplished by selecting particular mirror layer compositions and/or mirror layer configurations that minimize increased reflectivity in the top mirror and/or maximize increased reflectivity of the bottom mirror with increasing temperature. Improved reflectivity of the bottom mirror compared to the top mirror over a desired operating temperature range can be facilitated by (i) selecting mirror pairs for the bottom and/or top mirror that gives the bottom mirror pairs a greater increase in contrast ratio with increasing temperature compared to the top-mirror pairs, and/or (ii) including fewer mirror pairs in the bottom mirror than the number of mirror pairs that would give optimal reflectivity.

    Abstract translation: 可以通过选择使顶部反射镜中增加的反射率最小化和/或最大程度地提高底部反射镜随着温度升高的增加的反射率的特定镜面层组合物和/或镜面层构造来实现VCSEL中的改进的斜率效率。 可以通过(i)为底部和/或上部反射镜选择镜对来提高底部反射镜与顶部反射镜在所需工作温度范围内的反射率,从而使底部镜对对比度随着温度升高而增加。 与上镜对相比,和/或(ii)在底镜中包括较少的镜对,比将产生最佳反射率的镜对数多。

    Power and encircled flux alignment
    45.
    发明授权
    Power and encircled flux alignment 有权
    电源和环绕磁通对准

    公开(公告)号:US07295733B2

    公开(公告)日:2007-11-13

    申请号:US11157564

    申请日:2005-06-21

    CPC classification number: G02B6/4225

    Abstract: A system and method for aligning optical components based on coupled optical power and encircled flux is described. In one embodiment of the invention, coupled power and encircled flux is measured corresponding to multiple locations of a first optical component relative to a second optical element. The measured coupled power and encircled flux values are analyzed and an appropriate location of the first optical component relative to the second optical component is selected.

    Abstract translation: 描述了一种基于耦合光功率和环绕通量对准光学元件的系统和方法。 在本发明的一个实施例中,对应于第一光学部件相对于第二光学元件的多个位置来测量耦合的功率和环绕的通量。 分析测量的耦合功率和环绕磁通值,并选择第一光学部件相对于第二光学部件的适当位置。

    OPTICAL NETWORKS FOR CONSUMER ELECTRONICS
    46.
    发明申请
    OPTICAL NETWORKS FOR CONSUMER ELECTRONICS 有权
    消费电子的光学网络

    公开(公告)号:US20070233906A1

    公开(公告)日:2007-10-04

    申请号:US11468280

    申请日:2006-08-29

    CPC classification number: G06F13/28 G09G5/003 G09G2370/12 G09G2380/10

    Abstract: Digital optical networks for communication between digital consumer electronic devices are disclosed. A digital optical network can include an input interface configured to electrically couple to a DVI or HDMI receptacle of a source device. The input interface includes an optical transmitter for converting a TMDS signal into an optical signal. An input optical fiber optically coupled to the optical transmitter receives the optical signal. A coupler is coupled to the input optical fiber and couples the optical signal with at least one of multiple output optical fibers coupled to the coupler. Output interfaces each include an optical transmitter for converting the optical signal back into the electrical TMDS signal. The output interfaces are configured to electrically couple the TMDS signals with respective DVI or HDMI receptacles of DVI or HDMI sink devices.

    Abstract translation: 公开了用于数字消费电子设备之间的通信的数字光网络。 数字光网络可以包括被配置为电耦合到源设备的DVI或HDMI插座的输入接口。 输入接口包括用于将TMDS信号转换成光信号的光发射机。 光耦合到光发射机的输入光纤接收光信号。 耦合器耦合到输入光纤并且将光信号与耦合到耦合器的多个输出光纤中的至少一个耦合。 输出接口各自包括用于将光信号转换回电TMDS信号的光发射器。 输出接口被配置为将TMDS信号与DVI或HDMI接收器设备的相应DVI或HDMI插座电耦合。

    Coupling region for optical systems
    47.
    发明申请
    Coupling region for optical systems 失效
    光学系统耦合区域

    公开(公告)号:US20070009208A1

    公开(公告)日:2007-01-11

    申请号:US11178170

    申请日:2005-07-08

    CPC classification number: G02B6/4225 G02B6/4227

    Abstract: The present invention discloses systems and methods for defining a coupling region or regions for use with optical systems. An embodiment of the coupling region represents a region in which an optical parameter meets or exceeds a selected threshold value. Embodiments of the coupling region may be used for the alignment, characterization, qualification, or design of optical elements or optical assemblies.

    Abstract translation: 本发明公开了用于限定与光学系统一起使用的耦合区域或区域的系统和方法。 耦合区域的实施例表示光学参数满足或超过所选择的阈值的区域。 耦合区域的实施例可以用于光学元件或光学组件的对准,表征,鉴定或设计。

    Photo-imaged stress management layer for semiconductor devices
    48.
    发明申请
    Photo-imaged stress management layer for semiconductor devices 有权
    用于半导体器件的光成像应力管理层

    公开(公告)号:US20060199282A1

    公开(公告)日:2006-09-07

    申请号:US11071940

    申请日:2005-03-04

    Abstract: A photo-imaged stress management layer for a semiconductor device is described. The stress management layer is located on an outer surface of a semiconductor device and may be patterned to address certain stress compensation requirements of the semiconductor device. The stress management layer may be manufactured onto the semiconductor device using a photolithographic procedure that allows both simple and complex patterns to be realized.

    Abstract translation: 描述了用于半导体器件的光成像应力管理层。 应力管理层位于半导体器件的外表面上并且可以被图案化以解决半导体器件的某些应力补偿要求。 应力管理层可以使用允许简单和复杂图案实现的光刻过程在半导体器件上制造。

    Integrated light emitting device and photodiode with ohmic contact
    49.
    发明申请
    Integrated light emitting device and photodiode with ohmic contact 有权
    集成发光器件和光电二极管与欧姆接触

    公开(公告)号:US20060146904A1

    公开(公告)日:2006-07-06

    申请号:US11026699

    申请日:2004-12-30

    Abstract: Optoelectronic device including integrated light emitting device and photodiode. The optoelectronic device includes a light emitting, device such as a vertical cavity surface emitting laser (VCSEL) or resonant cavity light emitting diode (RCLED). A photodiode is also included in the optoelectronic device. Between the light emitting device and the photodiode is a transition region. At least part of the transition region is shorted. A metal contact provides a contact to both the light emitting device and the photodiode.

    Abstract translation: 光电器件包括集成发光器件和光电二极管。 光电子器件包括诸如垂直腔表面发射激光器(VCSEL)或谐振腔发光二极管(RCLED)的发光器件。 光电二极管也包括在光电器件中。 在发光器件和光电二极管之间是过渡区域。 至少部分过渡区域短路。 金属触点提供与发光器件和光电二极管的接触。

    Methods of conducting wafer level burn-in of electronic devices
    50.
    发明申请
    Methods of conducting wafer level burn-in of electronic devices 有权
    进行电子器件晶圆级老化的方法

    公开(公告)号:US20060097337A1

    公开(公告)日:2006-05-11

    申请号:US10486661

    申请日:2002-08-12

    CPC classification number: G01R31/2874 H01S5/0021 H01S5/02461 H01S5/183

    Abstract: Methods of conducting wafer level burn-in (WLBI) of semiconductor devices are presented wherein systems are provided having at least two electrodes (210, 215). Electrical bias (920) and/or thermal power (925) is applied on each side of a wafer (100) having back and front electrical contacts for semiconductor devices borne by the wafer. A pliable conductive layer (910) is described for supplying pins on the device side of a wafer with electrical contact and/or also for providing protection to the wafer from mechanical pressure being applied to its surfaces. Use of a cooling system (950) is also described for enabling the application of a uniform temperature to a wafer undergoing burn-in. Wafer level burn-in is performed by applying electrical and physical contact (915) using an upper contact plate to individual contacts for the semiconductor devices; applying electrical and physical contact using a lower contact plate (910) to a substrate surface of said semiconductor wafer; providing electrical power (920) to said semiconductor devices through said upper and lower second contact plates from a power source coupled to said upper and lower contacts plates; monitoring and controlling electrical power (935) to said semiconductor devices for a period in accordance with a specified burn-in criteria; removing electrical power at completion of said period (955); and removing electrical and physical contact to said semiconductor wafer (965).

    Abstract translation: 提供了进行半导体器件的晶片级老化(WLBI)的方法,其中提供具有至少两个电极(210,215)的系统。 电晶体(920)和/或热功率(925)施加在具有由晶片承载的半导体器件的背面和前部电触头的晶片(100)的每一侧上。 描述了一种柔性导电层(910),用于在具有电接触的晶片的器件侧上提供引脚和/或用于为施加到其表面的机械压力提供对晶片的保护。 还描述了使用冷却系统(950),以使得能够对经历老化的晶片施加均匀的温度。 通过使用上接触板向半导体器件的单个触点施加电和物理接触(915)来执行晶片级老化; 使用下接触板(910)将电和物理接触施加到所述半导体晶片的衬底表面; 通过所述上和下第二接触板从耦合到所述上和下接触板的电源向所述半导体器件提供电力(920); 根据指定的老化标准对所述半导体器件监控和控制电力(935)一段时间; 在所述期间完成时移除电力(955); 以及去除与所述半导体晶片(965)的电和物理接触。

Patent Agency Ranking