Semiconductor interlayer dielectric material and a semiconductor device using the same
    44.
    发明授权
    Semiconductor interlayer dielectric material and a semiconductor device using the same 有权
    半导体层间绝缘材料和使用其的半导体器件

    公开(公告)号:US06696538B2

    公开(公告)日:2004-02-24

    申请号:US09776383

    申请日:2001-02-02

    Abstract: The present invention relates to low a dielectric material essential for a next generation semiconductor with high density and high performance, and more particularly to a low dielectric material that is thermally stable and has good film-forming properties and excellent mechanical properties, a dielectric film comprising the low dielectric material, and a semiconductor device manufactured using the dielectric film. The present invention provides an organic silicate polymer having a flexible organic bridge unit in the network prepared by the resin composition of the component (a) and the component (b). a) organosilane of the formula R1mR2nSiX4−m−n (where each of R1 and R2 which may be the same or different, is a non-hydrolysable group; X is a hydrolysable group; and m and n are integers of from 0 to 3 satisfying 0≦m+n≦3) and/or a partially hydrolyzed condensate thereof b) organic bridged silane of the formula R3pY3−pSi—M—SiR4qZ3−q (where each of R3 and R4 which may be the same or different, is a non-hydrolysable group; each of Y and Z which may be the same or different, is a hydrolysable group; and p and q are integers of from 0 to 2) and/or a cyclic oligomer with organic bridge unit (Si—M—Si).

    Abstract translation: 本发明涉及低密度和高性能的下一代半导体所必需的低介电材料,更具体地涉及一种热稳定且具有良好的成膜性能和优异的机械性能的低介电材料,包括 低电介质材料和使用电介质膜制造的半导体器件。本发明提供一种在由组分(a)和组分(b)的树脂组合物制备的网络中具有柔性有机桥单元的有机硅酸盐聚合物。 a)式R 1 mR 2 n SiX 4-mn的有机硅烷(其中可以相同或不同的R 1和R 2各自是不可水解基团; X是可水解基团 ; m和n为0至3的整数,满足0 <= m + n <= 3)和/或部分水解的缩合物b)式R 3 pY 3-pSi-M-SiR的有机桥连硅烷 4> qZ3-q(其中R 3和R 4各自可以是 相同或不同的是不可水解的基团; 可以相同或不同的Y和Z中的每一个是可水解基团; p和q为0〜2的整数)和/或具有有机桥单元(Si-M-Si)的环状低聚物。

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