METHOD FOR DURABLE FABRIC TREATMENT
    41.
    发明申请
    METHOD FOR DURABLE FABRIC TREATMENT 审中-公开
    耐用织物处理方法

    公开(公告)号:US20120126163A1

    公开(公告)日:2012-05-24

    申请号:US13292232

    申请日:2011-11-09

    Inventor: TIRTHANKAR GHOSH

    Abstract: The present invention provides an aqueous composition useful for treating fabric comprising (i) a complex of silver ion with a copolymer and (ii) a dispersed amine-functional softener, wherein said copolymer comprises (a) 60-95 wt % polymerized units of one or more monomer X, wherein said monomer X is an ethylenically unsaturated compound having a substituent group selected from an unsaturated or aromatic heterocyclic group having at least one nitrogen atom; and (b) 5-40 wt % polymerized units of one or more monomer Y, wherein said monomer Y is an ethylenically unsaturated compound selected from carboxylic acids, organosulfuric acids, sulfonic acids, phosphonic acids, esters comprising polymerized units of ethylene oxide, and mixtures thereof. Also provided is a method of treating fabric comprising contacting said fabric with the composition of claim 1 at pH from 3 to 7.

    Abstract translation: 本发明提供了一种用于处理织物的水性组合物,其包含(i)银离子与共聚物的络合物和(ii)分散的胺官能的柔软剂,其中所述共聚物包含(a)60-95重量% 或更多的单体X,其中所述单体X是具有选自具有至少一个氮原子的不饱和或芳族杂环基的取代基的烯属不饱和化合物; 和(b)5-40重量%的一种或多种单体Y的聚合单元,其中所述单体Y是选自羧酸,有机硫酸,磺酸,膦酸的乙烯性不饱和化合物,包含环氧乙烷的聚合单元的酯和 其混合物。 还提供了一种处理织物的方法,其包括使所述织物与权利要求1的组合物在3至7的pH下接触。

    Heterocyclic latex copolymer and methods of making and using same
    43.
    发明授权
    Heterocyclic latex copolymer and methods of making and using same 有权
    杂环胶乳共聚物及其制备和使用方法

    公开(公告)号:US07807765B2

    公开(公告)日:2010-10-05

    申请号:US11803460

    申请日:2007-05-15

    CPC classification number: C08F220/18 C08F222/1006 C08F222/385 C08F226/06

    Abstract: A latex copolymer composition comprising >5 wt % of polymerized units derived from a monomer X containing an unsaturated heterocycle, wherein the latex copolymer composition comprises ≦1,000 ppm of residual monomer X is disclosed. Also disclosed are methods of making and using the latex copolymer compositions.

    Abstract translation: 一种胶乳共聚物组合物,其包含> 5重量%的衍生自含有不饱和杂环的单体X的聚合单元,其中所述胶乳共聚物组合物包含n1E; 1,000ppm的残余单体X。 还公开了制备和使用胶乳共聚物组合物的方法。

    Aqueous emulsion copolymer compositions
    45.
    发明申请
    Aqueous emulsion copolymer compositions 审中-公开
    水乳液共聚物组合物

    公开(公告)号:US20090143540A1

    公开(公告)日:2009-06-04

    申请号:US12313574

    申请日:2008-11-21

    CPC classification number: C09D133/12 C08L39/06 C09D4/00

    Abstract: An aqueous composition comprising polymer particles of one or more multistage aqueous emulsion, at least one of which is a multistage aqueous emulsion copolymer comprising polymerized units derived from monomer X in at least one stage, wherein monomer X is selected from polymerizable derivatives of imidazole, imidazoline, amidine, pyridine, pyrrole, pyrrolidine, pyrrolidinone, caprolactam, and combinations thereof. Also disclosed are methods of making and using the compositions.

    Abstract translation: 一种水性组合物,其包含一种或多种多级水性乳液的聚合物颗粒,其至少一种是在至少一个阶段包含衍生自单体X的聚合单元的多级含水乳液共聚物,其中单体X选自咪唑,咪唑啉 ,脒,吡啶,吡咯,吡咯烷,吡咯烷酮,己内酰胺及其组合。 还公开了制备和使用组合物的方法。

    Chemical mechanical polishing compositions and methods relating thereto
    46.
    发明授权
    Chemical mechanical polishing compositions and methods relating thereto 有权
    化学机械抛光组合物及其相关方法

    公开(公告)号:US07300874B2

    公开(公告)日:2007-11-27

    申请号:US11077671

    申请日:2005-03-10

    CPC classification number: C09G1/02 H01L21/3212

    Abstract: A method for chemical mechanical polishing of semiconductor substrates containing a metal layer requiring removal and metal interconnects utilizing a composition containing engineered copolymer molecules comprising hydrophilic functional groups and relatively less hydrophilic functional groups; the engineered copolymer molecules enabling contact-mediated reactions between the polishing pad surface and the substrate surface during CMP resulting in minimal dishing of the metal interconnects in the substrate.

    Abstract translation: 包含需要去除的金属层的半导体基板的化学机械抛光方法和利用包含亲水官能团和相对较少亲水官能团的工程共聚物分子的组合物的金属互连的金属互连的方法; 该工程共聚物分子在CMP期间能够在抛光垫表面和衬底表面之间进行接触介导的反应,导致衬底中金属互连的最小凹陷。

    Abrasive-free chemical mechanical polishing compositions and methods relating thereto
    47.
    发明申请
    Abrasive-free chemical mechanical polishing compositions and methods relating thereto 有权
    无磨料化学机械抛光组合物及其相关方法

    公开(公告)号:US20060110924A1

    公开(公告)日:2006-05-25

    申请号:US10996689

    申请日:2004-11-24

    CPC classification number: H01L21/7684 C09G1/04

    Abstract: An aqueous abrasive-free composition is useful for chemical mechanical polishing of a patterned semiconductor wafer containing a nonferrous metal. The composition comprises an oxidizer, an inhibitor for the nonferrous metal, 0 to 15 weight percent water soluble modified cellulose, 0 to 15 weight percent phosphorus compound, 0.005 to 5 weight percent of an amphiphilic polymer, the amphiphilic polymer having an ionic hydrophilic portion with a carbon number of 2 to 250 and water.

    Abstract translation: 无水磨料组合物可用于含有有色金属的图案化半导体晶片的化学机械抛光。 该组合物包含氧化剂,有色金属抑制剂,0-15重量%水溶性改性纤维素,0-15重量%磷化合物,0.005-5重量%两亲聚合物,两性聚合物具有离子亲水部分与 碳数为2至250和水。

    Chemical mechanical polishing compositions and methods relating thereto
    48.
    发明授权
    Chemical mechanical polishing compositions and methods relating thereto 有权
    化学机械抛光组合物及其相关方法

    公开(公告)号:US06632259B2

    公开(公告)日:2003-10-14

    申请号:US09860933

    申请日:2001-05-18

    CPC classification number: C09G1/02 H01L21/3212

    Abstract: A method for chemical mechanical polishing of semiconductor substrates containing a metal layer requiring removal and metal interconnects utilizing a composition containing engineered copolymer molecules comprising hydrophilic functional groups and relatively less hydrophilic functional groups; the engineered copolymer molecules enabling contact-mediated reactions between the polishing pad surface and the substrate surface during CMP resulting in minimal dishing of the metal interconnects in the substrate.

    Abstract translation: 包含需要去除的金属层的半导体基板的化学机械抛光方法和利用包含亲水官能团和相对较少亲水官能团的工程共聚物分子的组合物的金属互连的金属互连的方法; 该工程共聚物分子在CMP期间能够在抛光垫表面和衬底表面之间进行接触介导的反应,导致衬底中金属互连的最小凹陷。

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