公开(公告)号：US08395227B2

公开(公告)日：2013-03-12

申请号：US13344964

申请日：2012-01-06

Applicant: Toru Watanabe ,  Akira Sato ,  Shogo Inaba ,  Takeshi Mori

Inventor： Toru Watanabe ,  Akira Sato ,  Shogo Inaba ,  Takeshi Mori

IPC: H01L29/84 ,  H01L21/00

CPC classification number: B81B3/0086 ,  B81B2201/0271

Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.

Abstract translation: 微机电系统（MEMS）器件包括半导体衬底，包括固定电极的MEMS和通过绝缘层形成在半导体衬底上的可移动电极，以及形成在固定电极下方的半导体衬底中的阱。 井是n型井和p型井之一。 p型阱对固定电极施加正电压，而n型阱对固定电极施加负电压。

公开(公告)号：US08362577B2

公开(公告)日：2013-01-29

申请号：US13012099

申请日：2011-01-24

Applicant: Shogo Inaba ,  Akira Sato ,  Toru Watanabe ,  Takeshi Mori

Inventor： Shogo Inaba ,  Akira Sato ,  Toru Watanabe ,  Takeshi Mori

IPC: H01L29/84

CPC classification number: H03H3/0073 ,  H03H9/1057 ,  Y10S977/721

Abstract: A resonator with a microeletromechanical system structure has a transistor with a gate electrode, a capacitor with an upper and lower electrode, a substrate, a first and second structure of the microelectromechanical system structure, a first silicon layer of the first structure and the upper electrode formed above the substrate, a second silicon layer of the second structure and the gate electrode unit formed above the substrate, and an insulating film formed above the capacitor and the transistor, the insulating film having an opening for placement of the second structure.

Abstract translation: 具有微机电系统结构的谐振器具有具有栅电极的晶体管，具有上电极和下电极的电容器，基板，微机电系统结构的第一和第二结构，第一结构的第一硅层和上电极 形成在基板上方，第二结构的第二硅层和形成在基板上的栅电极单元，以及形成在电容器和晶体管上方的绝缘膜，绝缘膜具有用于放置第二结构的开口。

公开(公告)号：US20120256173A1

公开(公告)日：2012-10-11

申请号：US13518239

申请日：2010-12-28

Applicant: Tetsu Kitamura ,  Toru Watanabe ,  Toshihiro Ise

Inventor： Tetsu Kitamura ,  Toru Watanabe ,  Toshihiro Ise

IPC: H01L51/54 ,  C07D403/10 ,  C07F7/02

CPC classification number: C07D209/86 ,  C09B57/00 ,  C09B57/007 ,  C09B57/10 ,  C09B69/008 ,  H01L51/0025 ,  H01L51/0072 ,  H01L51/0081 ,  H01L51/0085 ,  H01L51/0087 ,  H01L51/0094 ,  H01L51/5016

Abstract: In order to provide an organic electroluminescence device with high luminous efficiency and good durability, the present invention provides a charge transporting material including a compound represented by Formula (Cz-1) wherein the content of a particular halogen-containing impurity in the charge transporting material is from 0.000% to 0.10% when the content is calculated as a proportion of the absorption intensity area of the impurity with respect to the total absorption intensity area of the charge transporting material, as measured by high-performance liquid chromatography at a measurement wavelength of 254 nm, and an organic electroluminescence device wherein the charge transporting material is included in an organic layer: wherein in Formula (Cz-1), each of R1 to R5 independently represents a particular atom or group; and each of n1 to n5 independently represents a particular integer.

Abstract translation: 为了提供具有高发光效率和良好耐久性的有机电致发光器件，本发明提供一种电荷输送材料，其包含由式（Cz-1）表示的化合物，其中电荷输送材料中特定的含卤素杂质的含量 当以与杂质的吸收强度面积相对于电荷输送材料的总吸收强度面积的比例计算含量为0.000％至0.10％时，通过高效液相色谱法在测量波长为 254nm的有机电致发光元件，其中电荷输送材料包含在有机层中的有机电致发光器件：其中在式（Cz-1）中，R 1至R 5中的每一个独立地表示特定的原子或基团; n1〜n5各自独立地表示特定的整数。

公开(公告)号：US08163746B2

公开(公告)日：2012-04-24

申请号：US12297275

申请日：2007-04-19

Applicant: Keizo Sugasawa ,  Kenichi Kawaguchi ,  Takaho Matsuzawa ,  Ryushi Seo ,  Hironori Harada ,  Akira Suga ,  Tomoaki Abe ,  Hidenori Azami ,  Shunichiro Matsumoto ,  Takashi Shin ,  Masayuki Tanahashi ,  Toru Watanabe

Inventor： Keizo Sugasawa ,  Kenichi Kawaguchi ,  Takaho Matsuzawa ,  Ryushi Seo ,  Hironori Harada ,  Akira Suga ,  Tomoaki Abe ,  Hidenori Azami ,  Shunichiro Matsumoto ,  Takashi Shin ,  Masayuki Tanahashi ,  Toru Watanabe

IPC: A61K31/5355 ,  A61K31/496 ,  A61K31/451 ,  A61K31/4535 ,  A61K31/426 ,  C07D413/14 ,  C07D211/32 ,  C07D211/46 ,  C07D277/24

CPC classification number: C07D277/56 ,  C07D263/34 ,  C07D263/48 ,  C07D413/04 ,  C07D413/12 ,  C07D413/14 ,  C07D417/04 ,  C07D417/12 ,  C07D417/14 ,  C07D471/04 ,  C07D471/10 ,  C07D487/08 ,  C07D491/08

Abstract: Provided is an agent for treating or preventing urinary frequency, urinary urgency and urinary, incontinence which are associated with overactive bladder, a lower urinary tract disease such as interstitial cystitis and chronic prostatitis accompanied by lower urinary tract pain, and various diseases accompanied by pain. A novel azolecarboxamide derivative in which an azole ring such as thioazole or oxazole is bonded to a benzene ring, pyridine ring or pyrimidine ring through carboxamide was confirmed to have a potent trkA receptor-inhibitory activity and found to be an agent for treating or preventing lower urinary tract disease and various diseases accompanied by pain, which is excellent in efficacy and safety, and thus the present invention was accomplished.

Abstract translation: 提供治疗或预防与膀胱过度活动相关的尿频，尿急和尿失禁的药物，诸如间质性膀胱炎的下尿路疾病和伴有下尿路疼痛的慢性前列腺炎以及伴有疼痛的各种疾病。 通过甲酰胺将唑环或吡唑环或吡啶环或吡啶环与吡唑或恶唑等唑类结合的新型偶氮甲酰胺衍生物被证实具有强的trkA受体抑制活性，被发现是用于治疗或预防较低 泌尿道疾病，伴有疼痛的各种疾病，其功效和安全性优异，从而完成了本发明。

公开(公告)号：US08120437B2

公开(公告)日：2012-02-21

申请号：US12723776

申请日：2010-03-15

Applicant: Toru Watanabe

Inventor： Toru Watanabe

IPC: H03B5/32

CPC classification number: H03L5/00 ,  H03B5/364

Abstract: An oscillator includes: a vibrator having a first electrode and a second electrode disposed with a gap with the first electrode; a reference voltage supply circuit adapted to supply a reference voltage; and a voltage adjustment circuit having a step-up circuit operating in response to input of clock pulses and adapted to convert the reference voltage into a voltage of a predetermined level and to output the voltage of the predetermined level, wherein the vibrator is configured so as to apply the voltage of the predetermined level, which is output from the voltage adjustment circuit, between the first electrode and the second electrode, and the clock pulses to be input into the step-up circuit are obtained using the vibrator as a source.

Abstract translation: 振荡器包括：振子，具有第一电极和与第一电极间隔设置的第二电极; 参考电压供应电路，其适于提供参考电压; 以及电压调节电路，其具有响应于时钟脉冲的输入而工作的升压电路，并且适于将参考电压转换成预定电平的电压并输出预定电平的电压，其中所述振动器被配置为 将从电压调节电路输出的预定电平的电压施加在第一电极和第二电极之间，并且使用振动器作为源获得要输入到升压电路的时钟脉冲。

公开(公告)号：US20110095383A1

公开(公告)日：2011-04-28

申请号：US12981747

申请日：2010-12-30

Applicant: Toru WATANABE ,  Akira SATO ,  Shogo INABA ,  Takeshi MORI

Inventor： Toru WATANABE ,  Akira SATO ,  Shogo INABA ,  Takeshi MORI

IPC: H01L29/84

CPC classification number: B81B3/0086 ,  B81B2201/0271

Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.

公开(公告)号：US20110031564A1

公开(公告)日：2011-02-10

申请号：US12907337

申请日：2010-10-19

Applicant: Shogo INABA ,  Akira SATO ,  Toru WATANABE ,  Takeshi MORI

Inventor： Shogo INABA ,  Akira SATO ,  Toru WATANABE ,  Takeshi MORI

IPC: H01L29/84

CPC classification number: B81B3/0086

Abstract: A micro electro mechanical system (MEMS) device includes: a fixed electrode made of silicon and provided above a semiconductor substrate; a movable electrode made of silicon and arranged in a mechanically movable manner by having a gap from the semiconductor substrate; and a wiring layered part that is provided around the movable electrode, covers a portion of the fixed electrode and includes wiring. One of the fixed electrode and the movable electrode is implanted with an impurity ion and at least a part of the portion of the fixed electrode covered by the wiring layered part is silicidized.

Abstract translation: 微电子机械系统（MEMS）装置包括：由硅制成并设置在半导体衬底之上的固定电极; 由硅制成的可移动电极，通过与半导体衬底有间隙以机械可移动的方式布置; 以及设置在可动电极周围的布线层叠部，覆盖固定电极的一部分并且包括布线。 固定电极和可动电极之一注入杂质离子，被布线层叠部覆盖的固定电极的部分的至少一部分被硅化。

公开(公告)号：US20100140734A1

公开(公告)日：2010-06-10

申请号：US12707943

申请日：2010-02-18

Applicant: Akira SATO ,  Toru WATANABE ,  Shogo INABA ,  Takeshi MORI

Inventor： Akira SATO ,  Toru WATANABE ,  Shogo INABA ,  Takeshi MORI

IPC: H01L29/06

CPC classification number: B81C1/00246 ,  B81B2207/015 ,  B81B2207/07 ,  B81C2203/0136 ,  B81C2203/0714 ,  B81C2203/0735 ,  H01L21/7682 ,  H01L24/05 ,  H01L2924/14 ,  H01L2924/00

Abstract: An electronic device, including a substrate, a functional structure constituting a functional element formed on the substrate, and a cover structure forming a cavity portion in which the functional structure is disposed, is disclosed. In the electronic device, the cover structure includes a laminated structure of an interlayer insulating film and a wiring layer, the laminated structure being formed on the substrate in such a way that it surrounds the cavity portion, and the cover structure has an upside cover portion covering the cavity portion from above, the upside cover portion being formed with part of the wiring layer that is disposed above the functional structure.

Abstract translation: 公开了一种电子设备，包括基板，构成在基板上形成的功能元件的功能结构，以及形成其中设置有功能结构的空腔部分的盖结构。 在电子设备中，盖结构包括层间绝缘膜和布线层的叠层结构，层叠结构以包围空腔部分的方式形成在基板上，并且盖结构具有上侧盖部分 从上方覆盖空腔部分，上侧盖部分形成有设置在功能结构上方的布线层的一部分。

公开(公告)号：US20100109815A1

公开(公告)日：2010-05-06

申请号：US12684336

申请日：2010-01-08

Applicant: Shogo INABA ,  Akira SATO ,  Toru WATANABE ,  Takeshi MORI

Inventor： Shogo INABA ,  Akira SATO ,  Toru WATANABE ,  Takeshi MORI

IPC: H01P7/00

CPC classification number: H03H3/0073 ,  H03H9/1057 ,  Y10S977/721

Abstract: A method is for manufacturing a microelectromechanical system resonator having a semiconductor device and a microelectromechanical system structure unit formed on a substrate. The method includes: forming a lower electrode of an oxide-nitride-oxide capacitor unit included in the semiconductor device using a first silicon layer; forming, using a second silicon layer, a substructure of the microelectromechanical system structure unit and an upper electrode of the oxide-nitride-oxide capacitor unit included in the semiconductor device; and forming, using a third silicon layer, a superstructure of the microelectromechanical system structure unit and a gate electrode of a complementary metal oxide semiconductor circuit unit included in the semiconductor device.

Abstract translation: 一种用于制造具有形成在基板上的半导体器件和微机电系统结构单元的微机电系统谐振器的方法。 该方法包括：使用第一硅层形成包括在半导体器件中的氧化物 - 氮化物 - 氧化物电容器单元的下电极; 使用第二硅层形成微机电系统结构单元的子结构和包括在半导体器件中的氧化物 - 氮化物 - 氧化物电容器单元的上电极; 以及使用第三硅层形成所述微机电系统结构单元的上部结构和包括在所述半导体器件中的互补金属氧化物半导体电路单元的栅电极。

公开(公告)号：US07671430B2

公开(公告)日：2010-03-02

申请号：US11928519

申请日：2007-10-30

Applicant: Shogo Inaba ,  Akira Sato ,  Toru Watanabe ,  Takeshi Mori

Inventor： Shogo Inaba ,  Akira Sato ,  Toru Watanabe ,  Takeshi Mori

IPC: H01L21/66

CPC classification number: H03H3/0073 ,  H03H9/1057 ,  Y10S977/721

Abstract: A method is for manufacturing a microeletromechanical system resonator having a semiconductor device and a microelectromechanical system structure unit formed on a substrate. The method includes: forming a lower electrode of an oxide-nitride-oxide capacitor unit included in the semiconductor device using a first silicon layer; forming, using a second silicon layer, a substructure of the microelectromechanical system structure unit and an upper electrode of the oxide-nitride-oxide capacitor unit included in the semiconductor device; and forming, using a third silicon layer, a superstructure of the microelectromechanical system structure unit and a gate electrode of a complementary metal oxide semiconductor circuit unit included in the semiconductor device.

Abstract translation: 一种用于制造具有半导体器件和形成在衬底上的微机电系统结构单元的微机械系统谐振器的方法。 该方法包括：使用第一硅层形成包括在半导体器件中的氧化物 - 氮化物 - 氧化物电容器单元的下电极; 使用第二硅层形成微机电系统结构单元的子结构和包括在半导体器件中的氧化物 - 氮化物 - 氧化物电容器单元的上电极; 以及使用第三硅层形成所述微机电系统结构单元的上部结构和包括在所述半导体器件中的互补金属氧化物半导体电路单元的栅电极。