公开(公告)号：US11437249B2

公开(公告)日：2022-09-06

申请号：US16930800

申请日：2020-07-16

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma

IPC: C23C16/40 ,  H01L21/67 ,  H01L21/3065 ,  H01J37/32 ,  C23C16/455 ,  C23C16/44

Abstract: To create constant partial pressures of the by-products and residence time of the gas molecules across the wafer, a dual showerhead reactor can be used. A dual showerhead structure can achieve spatially uniform partial pressures, residence times and temperatures for the etchant and for the by-products, thus leading to uniform etch rates across the wafer. The system can include differential pumping to the reactor.

公开(公告)号：US11387120B2

公开(公告)日：2022-07-12

申请号：US16875814

申请日：2020-05-15

Applicant: ASM IP Holding B.V.

Inventor： Varun Sharma

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/3065 ,  C23C16/455 ,  C23C16/448

Abstract: A chemical dispensing apparatus for providing a chlorine vapor to a reaction chamber is disclosed. The chemical dispensing apparatus may include: a chemical storage vessel configured for storing a chlorine-containing chemical species, a reservoir vessel in fluid communication with the chemical storage vessel, the reservoir vessel configured for converting the chlorine-containing chemical species to the chlorine vapor, and a reaction chamber in fluid communication with the reservoir vessel. Methods for dispensing a chlorine vapor to a reaction chamber are also disclosed.

公开(公告)号：US20220181163A1

公开(公告)日：2022-06-09

申请号：US17457764

申请日：2021-12-06

Applicant: ASM IP HOLDING B.V.

Inventor： Andrea Illiberi ,  Varun Sharma ,  Michael Givens ,  Marko Tuominen ,  Shaoren Deng

IPC: H01L21/311 ,  H01L21/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/46 ,  C23C16/56

Abstract: The current disclosure generally relates to the manufacture of semiconductor devices. Specifically, the disclosure relates to methods of depositing a layer on a substrate comprising a recess. The method comprises providing the substrate comprising a recess in a reaction chamber, depositing inhibition material on the substrate to fill the recess with inhibition material, removing the inhibition material from the substrate for exposing a deposition area and depositing a layer on the deposition area by a vapor deposition process. A vapor deposition assembly for performing the method is also disclosed.

公开(公告)号：US11230770B2

公开(公告)日：2022-01-25

申请号：US16881885

申请日：2020-05-22

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC: C23F4/02 ,  C23F1/12 ,  H01L21/3213 ,  C09K13/00 ,  H01L21/311 ,  C09K13/08 ,  C09K13/10 ,  H01J37/32 ,  H01L21/3065

Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US20210358721A1

公开(公告)日：2021-11-18

申请号：US17385997

申请日：2021-07-27

Applicant: ASM IP Holding B.V.

Inventor： Tom Blomberg ,  Varun Sharma ,  Chiyu Zhu

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687

Abstract: A reactor for processing substrates and methods for manufacturing and using the reactor are disclosed. Specifically, the reactor can include a material that forms gas compounds. The gas compounds are then easily removed from the reactor, thus reducing or avoiding contamination of the substrates in the reactor that would otherwise arise.

公开(公告)号：US20210020469A1

公开(公告)日：2021-01-21

申请号：US16930867

申请日：2020-07-16

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma

IPC: H01L21/67 ,  H01L21/3065

Abstract: A semiconductor vapor etching device is disclosed. The device can include an intermediate chamber between a vapor source and a reaction chamber. Etch reactant vapor can be pulsed from the intermediate chamber to the reaction chamber to etch a substrate.

公开(公告)号：US20200308709A1

公开(公告)日：2020-10-01

申请号：US16881718

申请日：2020-05-22

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi P. Haukka ,  Marko J. Tuominen ,  Chiyu Zhu

IPC: C23F4/02 ,  C23F1/12 ,  H01L21/3213 ,  C09K13/00 ,  H01L21/311 ,  C09K13/08 ,  C09K13/10 ,  H01J37/32 ,  H01L21/3065

Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US20200279758A1

公开(公告)日：2020-09-03

申请号：US16875814

申请日：2020-05-15

Applicant: ASM IP Holding B.V.

Inventor： Varun Sharma

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/3065 ,  C23C16/455 ,  C23C16/448

Abstract: A chemical dispensing apparatus for providing a chlorine vapor to a reaction chamber is disclosed. The chemical dispensing apparatus may include: a chemical storage vessel configured for storing a chlorine-containing chemical species, a reservoir vessel in fluid communication with the chemical storage vessel, the reservoir vessel configured for converting the chlorine-containing chemical species to the chlorine vapor, and a reaction chamber in fluid communication with the reservoir vessel. Methods for dispensing a chlorine vapor to a reaction chamber are also disclosed.

公开(公告)号：US10665425B2

公开(公告)日：2020-05-26

申请号：US16390319

申请日：2019-04-22

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi P. Haukka ,  Marko J. Tuominen ,  Chiyu Zhu

IPC: H01J37/32 ,  C23F1/12 ,  H01L21/311 ,  C23G5/00 ,  H01L21/3213

Abstract: Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.

公开(公告)号：US10453701B2

公开(公告)日：2019-10-22

申请号：US15486124

申请日：2017-04-12

Applicant: ASM IP Holding B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma ,  Jan Willem Maes ,  Delphine Longrie ,  Krzysztof Kachel

IPC: H01L21/311 ,  H01L21/768 ,  H01L21/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/56 ,  H01L21/033 ,  H01L21/32 ,  H01L21/3213

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.