公开(公告)号：US20240352586A1

公开(公告)日：2024-10-24

申请号：US18761994

申请日：2024-07-02

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Michael Robert Rice ,  Arkaprava Dan ,  Hanhong Chen

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/4584 ,  C23C16/45544 ,  C23C16/52

Abstract: Apparatus and methods to process one or more substrates are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition. The support assembly configured to offset the position of the substrate with respect to the processing stations.

公开(公告)号：US20240096688A1

公开(公告)日：2024-03-21

申请号：US18523394

申请日：2023-11-29

Applicant: Applied Materials, Inc.

Inventor： Michael Robert Rice ,  Joseph AuBuchon ,  Sanjeev Baluja ,  Mandyam Sriram

IPC: H01L21/687 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01L21/68785 ,  C23C16/4409 ,  C23C16/45525 ,  C23C16/4584 ,  C23C16/46 ,  H01L21/67103 ,  H01L21/6719 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68764 ,  H01L21/68771

Abstract: Apparatus and methods to process one or more wafers are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition.

公开(公告)号：US20230366088A1

公开(公告)日：2023-11-16

申请号：US18227058

申请日：2023-07-27

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Kevin Griffin ,  Hanhong Chen

IPC: C23C16/455 ,  H01L21/67 ,  H01L21/02

CPC classification number: C23C16/45557 ,  C23C16/45527 ,  H01L21/67253 ,  H01L21/0228 ,  C23C16/45544

Abstract: Methods for controlling pulse shape in ALD processes improves local non-uniformity issues of films deposited on substrate surface. The methods include using a variable flow valve creating predetermined pulse shape when a reactant is provided on a substrate surface.

公开(公告)号：US11713508B2

公开(公告)日：2023-08-01

申请号：US17845191

申请日：2022-06-21

Applicant: Applied Materials, Inc.

Inventor： Kevin Griffin ,  Sanjeev Baluja ,  Joseph AuBuchon ,  Mario D. Silvetti ,  Hari Ponnekanti

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  H01J37/32

CPC classification number: C23C16/45565 ,  C23C16/458 ,  C23C16/45544 ,  C23C16/45589 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32431 ,  H01J37/32449

Abstract: Processing chambers and methods to disrupt the boundary layer are described. The processing chamber includes a showerhead and a substrate support therein. The showerhead and the substrate support are spaced to have a process gap between them. In use, a boundary layer is formed adjacent to the substrate support or wafer surface. As the reaction occurs at the wafer surface, reaction products and byproduct are produced, resulting in reduced chemical utilization rate. The processing chamber and methods described disrupt the boundary layer by changing one or more process parameters (e.g., pressure, flow rate, time, process gap or temperature of fluid passing through the showerhead).

公开(公告)号：US11584993B2

公开(公告)日：2023-02-21

申请号：US17074035

申请日：2020-10-19

Applicant: Applied Materials, Inc.

Inventor： Jared Ahmad Lee ,  Sanjeev Baluja ,  Joseph AuBuchon ,  Kenneth Brian Doering ,  Dhritiman Subha Kashyap ,  Kartik Shah

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/44

Abstract: Gas distribution assemblies and methods for providing a flow of gases to a process station are described. The gas distribution assemblies comprise a pumping liner with a showerhead and a gas funnel positioned therein. The pumping liner has an inner wall that slants at a first angle relative to a central axis of the gas distribution assembly so that the inner wall adjacent the bottom wall of the pumping liner is closer to the central axis than the inner wall adjacent the top wall. The gas funnel and pumping liner form a plenum between the outer wall of the gas funnel, a cavity in the bottom wall of the gas funnel and the inner wall of the pumping liner.

公开(公告)号：US11560624B2

公开(公告)日：2023-01-24

申请号：US16555759

申请日：2019-08-29

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon

IPC: C23C16/455

Abstract: A precursor delivery system is described herein. Some embodiments provide a precursor delivery system capable of providing a uniform gas flow comprising precursor into a processing chamber for atomic layer deposition processes. Some embodiments of the precursor delivery system comprise a reservoir with an inlet line, an outlet line and an outlet valve. Further embodiments comprise a precursor source, an inlet valve, a heater, a processing chamber and a controller. Additional embodiments relate to methods for using a precursor delivery system.

公开(公告)号：US11479855B2

公开(公告)日：2022-10-25

申请号：US17002409

申请日：2020-08-25

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Dhritiman Subha Kashyap ,  Jared Ahmad Lee ,  Tejas Ulavi ,  Michael Rice

IPC: C23C16/455 ,  C23C16/458 ,  H01L21/67 ,  H01L21/687 ,  C23C16/46 ,  H01L21/02

Abstract: Apparatus and methods to process one or more wafers are described. A processing chamber comprises a first processing station comprising a first gas injector having a first face, a first emissivity and a first temperature, a second processing station comprising a second gas injector having a second face, a second emissivity and a second temperature, and a substrate support assembly comprising a plurality of substantially coplanar support surfaces, the substrate support assembly configured to move the support surfaces between the first processing station and the second processing station. When a wafer is on the support surfaces, a temperature skew of less than about 0.5° C. is developed upon moving the wafer between the stations in about 0.5 seconds.

公开(公告)号：US20220195600A1

公开(公告)日：2022-06-23

申请号：US17129660

申请日：2020-12-21

Applicant: Applied Materials, Inc.

Inventor： Kevin Griffin ,  Sanjeev Baluja ,  Joseph AuBuchon ,  Mario D. Silvetti ,  Hari Ponnekanti

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52

Abstract: Processing chambers and methods to disrupt the boundary layer are described. The processing chamber includes a showerhead and a substrate support therein. The showerhead and the substrate support are spaced to have a process gap between them. In use, a boundary layer is formed adjacent to the substrate support or wafer surface. As the reaction occurs at the wafer surface, reaction products and byproduct are produced, resulting in reduced chemical utilization rate. The processing chamber and methods described disrupt the boundary layer by changing one or more process parameters (e.g., pressure, flow rate, time, process gap or temperature of fluid passing through the showerhead).

公开(公告)号：US20220075396A1

公开(公告)日：2022-03-10

申请号：US17521469

申请日：2021-11-08

Applicant: Applied Materials, Inc.

Inventor： Michael Rice ,  Joseph AuBuchon ,  Sanjeev Baluja ,  Ashley M. Okada ,  Alexander Fernandez ,  Ming Xu ,  Marcel E. Josephson ,  Sushant Suresh Koshti ,  Kenneth Le ,  Kevin M. Brashear

IPC: G05D7/06

Abstract: Gas distribution apparatus to provide uniform flows of gases from a single source to multiple processing chambers are described. A regulator is positioned at an upstream end of a shared volume having a plurality of downstream ends. A flow controller is positioned at each downstream end of the shared volume, the flow controller comprising an orifice and a fast pulsing valve. Methods of using the gas distribution apparatus and calibrating the flow controllers are also described.

公开(公告)号：US11169547B2

公开(公告)日：2021-11-09

申请号：US16396684

申请日：2019-04-27

Applicant: Applied Materials, Inc.

Inventor： Michael Rice ,  Joseph AuBuchon ,  Sanjeev Baluja ,  Ashley M. Okada ,  Alexander Fernandez ,  Ming Xu ,  Marcel E. Josephson ,  Sushant Suresh Koshti ,  Kenneth Le ,  Kevin M. Brashear

IPC: G05D7/06 ,  G01F25/00

Abstract: Gas distribution apparatus to provide uniform flows of gases from a single source to multiple processing chambers are described. A regulator is positioned at an upstream end of a shared volume having a plurality of downstream ends. A flow controller is positioned at each downstream end of the shared volume, the flow controller comprising an orifice and a fast pulsing valve. Methods of using the gas distribution apparatus and calibrating the flow controllers are also described.