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    POLISHING WITH PRE DEPOSITION SPECTRUM
    41.
    发明申请
    POLISHING WITH PRE DEPOSITION SPECTRUM 有权
    用预沉积光谱进行抛光

    公开(公告)号：US20160018815A1

    公开(公告)日：2016-01-21

    申请号：US14333395

    申请日：2014-07-16

    Applicant: Applied Materials, Inc.

    Inventor： Tomohiko Kitajima ,  Jeffrey Drue David ,  Jun Qian ,  Taketo Sekine ,  Garlen C. Leung ,  Sidney P. Huey

    IPC: G05B19/418

    CPC classification number: G05B19/418 ,  B24B37/013 ,  G05B2219/45031 ,  G05B2219/45232 ,  G05B2219/49085 ,  H01L21/31053 ,  H01L22/12 ,  H01L22/26 ,  Y02P90/02

    Abstract: A method of controlling polishing includes storing a base spectrum, the base spectrum being a spectrum of light reflected from a substrate after deposition of a deposited dielectric layers overlying a metallic layer or semiconductor wafer and before deposition of a non-metallic layer over the plurality of deposited dielectric layer. After deposition of the non-metallic layer and during polishing of the non-metallic layer on the substrate, measurements of a sequence of raw spectra of light reflected the substrate during polishing are received from an in-situ optical monitoring system. Each raw spectrum is normalized to generate a sequence of normalized spectra using the raw spectrum and the base spectrum. At least one of a polishing endpoint or an adjustment for a polishing rate is determined based on at least one normalized predetermined spectrum from the sequence of normalized spectra.

    Abstract translation: 控制抛光的方法包括：存储基色谱，所述基色谱是在沉积覆盖在金属层或半导体晶片上的沉积的介电层之后并且在非金属层上沉积多个 沉积介电层。 在沉积非金属层之后并且在非金属层的抛光过程中，从原位光学监测系统接收在抛光期间反射基板的原始光谱序列的测量。 对每个原始光谱进行归一化，以使用原始光谱和基色谱产生归一化光谱序列。 基于归一化光谱序列中的至少一个归一化的预定光谱来确定抛光终点或抛光速率的调整中的至少一个。

    Weighted regression of thickness maps from spectral data
    42.
    发明授权
    Weighted regression of thickness maps from spectral data 有权
    从光谱数据加权回归厚度图

    公开(公告)号：US08992286B2

    公开(公告)日：2015-03-31

    申请号：US13777672

    申请日：2013-02-26

    Applicant: Applied Materials, Inc.

    Inventor： Benjamin Cherian ,  Jeffrey Drue David ,  Boguslaw A. Swedek ,  Dominic J. Benvegnu ,  Jun Qian ,  Thomas H. Osterheld

    IPC: B24B1/00 ,  B24B49/12 ,  B24B37/013

    CPC classification number: B24B49/12 ,  B24B37/013

    Abstract: A method of controlling a polishing operation includes measuring a plurality of spectra at a plurality of different positions on a substrate to provide a plurality of measured spectra. For each measured spectrum of the plurality of measured spectra, a characterizing value is generated based on the measured spectrum. For each characterizing value, a goodness of fit of the measured spectrum to another spectrum used in generating the characterizing value is determined. A wafer-level characterizing value map is generated by applying a regression to the plurality of characterizing values with the plurality of goodnesses of fit used as weighting factors in the regression. A polishing endpoint or a polishing parameter of the polishing apparatus is adjusted based on the wafer-level characterizing map, and the substrate or a subsequent substrate is polished in the polishing apparatus with the adjusted polishing endpoint or polishing parameter.

    Abstract translation: 控制抛光操作的方法包括测量衬底上多个不同位置处的多个光谱以提供多个测量光谱。 对于多个测量光谱的每个测量光谱，基于测量的光谱产生表征值。 对于每个特征值，确定测量的光谱与生成表征值所使用的另一光谱的拟合度。 通过将回归应用于具有多个适合度的拟合优点用作回归中的加权因子来生成晶片级特征值映射。 基于晶片级特征图调整抛光装置的抛光终点或抛光参数，并且在抛光装置中用调整的抛光终点或抛光参数对衬底或随后的衬底进行抛光。

    WEIGHTED REGRESSION OF THICKNESS MAPS FROM SPECTRAL DATA
    43.
    发明申请
    WEIGHTED REGRESSION OF THICKNESS MAPS FROM SPECTRAL DATA 有权
    从光谱数据加权厚度的回归

    公开(公告)号：US20140242878A1

    公开(公告)日：2014-08-28

    申请号：US13777672

    申请日：2013-02-26

    Applicant: Applied Materials, Inc.

    Inventor： Benjamin Cherian ,  Jeffrey Drue David ,  Boguslaw A. Swedek ,  Dominic J. Benvegnu ,  Jun Qian ,  Thomas H. Osterheld

    IPC: B24B49/12 ,  B24B37/013

    CPC classification number: B24B49/12 ,  B24B37/013

    Abstract: A method of controlling a polishing operation includes measuring a plurality of spectra at a plurality of different positions on a substrate to provide a plurality of measured spectra. For each measured spectrum of the plurality of measured spectra, a characterizing value is generated based on the measured spectrum. For each characterizing value, a goodness of fit of the measured spectrum to another spectrum used in generating the characterizing value is determined. A wafer-level characterizing value map is generated by applying a regression to the plurality of characterizing values with the plurality of goodnesses of fit used as weighting factors in the regression. A polishing endpoint or a polishing parameter of the polishing apparatus is adjusted based on the wafer-level characterizing map, and the substrate or a subsequent substrate is polished in the polishing apparatus with the adjusted polishing endpoint or polishing parameter.

    Abstract translation: 控制抛光操作的方法包括测量衬底上多个不同位置处的多个光谱以提供多个测量光谱。 对于多个测量光谱的每个测量光谱，基于测量的光谱产生表征值。 对于每个特征值，确定测量的光谱与生成表征值所使用的另一光谱的拟合度。 通过将回归应用于具有多个适合度的拟合优点用作回归中的加权因子来生成晶片级特征值映射。 基于晶片级特征图调整抛光装置的抛光终点或抛光参数，并且在抛光装置中用调整的抛光终点或抛光参数对衬底或随后的衬底进行抛光。

    Feedback for polishing rate correction in chemical mechanical polishing
    44.
    发明授权
    Feedback for polishing rate correction in chemical mechanical polishing 有权
    化学机械抛光抛光率校正的反馈

    公开(公告)号：US08755927B2

    公开(公告)日：2014-06-17

    申请号：US13919144

    申请日：2013-06-17

    Applicant: Applied Materials, Inc.

    Inventor： Jun Qian ,  Charles C. Garretson ,  Sivakumar Dhandapani ,  Jeffrey Drue David ,  Harry Q. Lee

    IPC: G06F19/00 ,  B24B49/04 ,  B24B49/12

    CPC classification number: B24B49/04 ,  B24B49/12

    Abstract: A substrate having a plurality of zones is polished and spectra are measured. For each zone, a first linear function fits a sequence of index values associated with reference spectra that best match the measured spectra. A projected time at which a reference zone will reach the target index value is determined based on the first linear function, and for at least one adjustable zone, a polishing parameter adjustment is calculated such that the adjustable zone has closer to the target index at the projected time than without such adjustment. The adjustment is calculated based on a feedback error calculated for a previous substrate. The feedback error for a subsequent substrate is calculated based on a second linear function that fits a sequence of index values associated with reference spectra that best match spectra measured after the polishing parameter is adjusted.

    Abstract translation: 研磨具有多个区域的基板并测量光谱。 对于每个区域，第一个线性函数拟合与参考光谱相关联的索引值序列，该参考光谱与测量的光谱最匹配。 基于第一线性函数确定参考区域将达到目标指标值的预计时间，并且对于至少一个可调整区域，计算抛光参数调整，使得可调节区域更接近目标索引处的目标索引 预计时间比没有这样的调整。 基于对先前基板计算的反馈误差来计算调整。 基于适合与调整抛光参数之后测量的最佳匹配光谱的参考光谱相关联的索引值序列的第二线性函数来计算后续衬底的反馈误差。

    ACOUSTIC MONITORING FOR PROCESS RELIABILITY DURING POLISHING
    46.
    发明申请
    ACOUSTIC MONITORING FOR PROCESS RELIABILITY DURING POLISHING 有权

    公开(公告)号：US20250062163A1

    公开(公告)日：2025-02-20

    申请号：US18452426

    申请日：2023-08-18

    Applicant: Applied Materials, Inc.

    Inventor： Nicholas A. Wiswell ,  Benjamin Cherian ,  Haoquan Fang ,  Jun Qian ,  Thomas H. Osterheld ,  Sohrab Pourmand

    IPC: H01L21/66 ,  B24B37/005

    Abstract: Disclosed herein is a chemical mechanical polishing apparatus, comprising a platen to support a polishing pad; a carrier head to hold a surface of a substrate against the polishing pad; a motor to generate relative motion between the platen and the carrier head so as to polish an overlying layer on the substrate; an in-situ acoustic monitoring system including an acoustic sensor that receives acoustic energy from the substrate and the polishing pad; and a controller configured to detect an abnormal acoustic event based on measurements from the in-situ acoustic monitoring system, and determine a type of anomaly based on signals measured by the in-situ acoustic monitoring system during the abnormal acoustic event.

    Preston matrix generator
    47.
    发明授权
    Preston matrix generator 有权

    公开(公告)号：US11989492B2

    公开(公告)日：2024-05-21

    申请号：US16554486

    申请日：2019-08-28

    Applicant: Applied Materials, Inc.

    Inventor： Sivakumar Dhandapani ,  Thomas Li ,  Jun Qian

    IPC: B24B49/10 ,  B24B37/04 ,  G06F30/17 ,  G06F30/333 ,  G06F115/10

    CPC classification number: G06F30/17 ,  B24B37/042 ,  B24B49/10 ,  G06F30/333 ,  G06F2115/10

    Abstract: A method of generating a matrix to relate a plurality of controllable parameters of a chemical mechanical polishing system to a polishing rate profile includes polishing a test substrate. The test substrate is polished for a first period of time using baseline parameter values with a first parameter set to a first value, and the test substrate is polished for a second period of time using first modified parameter values with the first parameter set to a modified second value. A thickness of the test substrate is monitored during polishing, and a baseline polishing rate profile is determined for the first period of time and a first modified polishing rate profile is determined for the second period of time. The matrix is calculated based on the baseline parameter values, the first modified parameters, the baseline polishing rate profile and the first modified polishing rate profile.

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