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    CONTROL OF PROCESSING PARAMETERS FOR SUBSTRATE POLISHING WITH SUBSTRATE PRECESSION
    1.
    发明申请
    CONTROL OF PROCESSING PARAMETERS FOR SUBSTRATE POLISHING WITH SUBSTRATE PRECESSION 有权

    公开(公告)号：US20220283554A1

    公开(公告)日：2022-09-08

    申请号：US17681673

    申请日：2022-02-25

    Applicant: Applied Materials, Inc.

    Inventor： Eric Lau ,  Charles C. Garretson ,  Huanbo Zhang ,  Zhize Zhu ,  Benjamin Cherian ,  Brian J. Brown ,  Thomas H. Osterheld

    IPC: G05B13/04 ,  B24B49/00 ,  B24B49/12 ,  B24B49/16 ,  B24B37/005

    Abstract: Generating a recipe for a polishing process includes receiving a target removal profile that includes a target thickness to remove for locations spaced angularly around a center of a substrate, storing a first function providing substrate orientation relative to a carrier head over time, storing a second function defining a polishing rate below a zone of the zone as a function of one or more pressures of one or more zones of the carrier head, and for each particular zone of the plurality of zones, calculate a recipe defining a pressure for the particular zone over time. Calculating the recipe includes calculating an expected thickness profile after polishing from the second function defining the polishing rate and the first function providing substrate orientation relative to the zone over time, and applying a minimizing algorithm to reduce a difference between the expected thickness profile and the target thickness profile.

    Polishing head with local wafer pressure
    5.
    发明授权
    Polishing head with local wafer pressure 有权

    公开(公告)号：US12251788B2

    公开(公告)日：2025-03-18

    申请号：US18630886

    申请日：2024-04-09

    Applicant: Applied Materials, Inc.

    Inventor： Andrew Nagengast ,  Steven M. Zuniga ,  Jay Gurusamy ,  Charles C. Garretson ,  Vladimir Galburt

    IPC: B24B37/32 ,  B24B37/005 ,  B24B37/04

    Abstract: A polishing system includes a carriage arm having an actuator disposed on a lower surface thereof. The actuator includes a piston and a roller coupled to a distal end of the piston. The polishing system includes a polishing pad and a substrate carrier suspended from the carriage arm and configured to apply a pressure between a substrate and the polishing pad. The substrate carrier includes a housing, a retaining ring, and a membrane. The substrate carrier includes an upper load ring disposed in the housing. The roller of the actuator is configured to contact the upper load ring during relative rotation between the substrate carrier and the carriage arm. The actuator is configured to apply a load to a portion of the upper load ring thereby altering the pressure applied between the substrate and the polishing pad.

    MACHINE LEARNING FOR CLASSIFYING RETAINING RINGS
    6.
    发明申请
    MACHINE LEARNING FOR CLASSIFYING RETAINING RINGS 有权

    公开(公告)号：US20220281052A1

    公开(公告)日：2022-09-08

    申请号：US17678932

    申请日：2022-02-23

    Applicant: Applied Materials, Inc.

    Inventor： Eric Lau ,  Andrew J. Nagengast ,  Charles C. Garretson ,  Huanbo Zhang ,  Zhize Zhu

    IPC: B24B37/005

    Abstract: A method for optimizing polishing includes, for each respective retaining ring of a plurality of retaining rings mounted on a particular carrier head, performing measurements for a bottom surface of the respective retaining ring mounted on the particular carrier head using a coordinate measurement machine and collecting a respective removal profile of a substrate polished using the respective retaining ring. A machine learning model is trained based on the measurements of the bottom surface of the retaining ring and the respective removal profiles.

    Asymmetry correction via oriented wafer loading
    8.
    发明授权
    Asymmetry correction via oriented wafer loading 有权

    公开(公告)号：US11282755B2

    公开(公告)日：2022-03-22

    申请号：US16552456

    申请日：2019-08-27

    Applicant: Applied Materials, Inc.

    Inventor： Eric Lau ,  Charles C. Garretson ,  Huanbo Zhang ,  Zhize Zhu

    IPC: H01L21/66 ,  B25J9/16 ,  H01L21/306 ,  H01L21/67 ,  H01L21/687 ,  B24B37/30 ,  B24B49/12

    Abstract: A chemical mechanical polishing system includes a metrology station having a sensor configured to measure a thickness profile of a substrate, a robotic arm configured to transfer the substrate from the metrology station to a polishing station having, a platen to support a polishing pad having a polishing surface, a carrier head on the polishing surface, the carrier head having a membrane configured to apply pressure to the substrate in the carrier head, and a controller configured to receive measurements from the sensor and configured to control the robotic arm to orient the substrate in the carrier head according to substrate profile and a removal profile for the carrier head.

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