公开(公告)号：US07012011B2

公开(公告)日：2006-03-14

申请号：US10876511

申请日：2004-06-24

Applicant: Gregory M. Chrysler ,  Chuan Hu

Inventor： Gregory M. Chrysler ,  Chuan Hu

IPC: H01I21/00

CPC classification number: H01L21/4882 ,  H01L21/78 ,  H01L23/3732 ,  H01L23/3735 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/274 ,  H01L2224/73253 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/15312 ,  H01L2924/00

Abstract: An embodiment of the present invention is a technique to heat spread at wafer level. A silicon wafer is thinned. A chemical vapor deposition diamond (CVDD) wafer processed. The CVDD wafer is bonded to the thinned silicon wafer to form a bonded wafer. Metallization is plated on back side of the CVDD wafer. The CVDD wafer is reflowed to flatten the back side.

公开(公告)号：US20050121778A1

公开(公告)日：2005-06-09

申请号：US11033325

申请日：2005-01-11

Applicant: Cheng-Yi Liu ,  Johanna Swan ,  Steven Towle ,  Anna George ,  Chuan Hu

Inventor： Cheng-Yi Liu ,  Johanna Swan ,  Steven Towle ,  Anna George ,  Chuan Hu

IPC: H01L23/14 ,  H01L23/367 ,  H01L23/495

CPC classification number: H01L24/97 ,  H01L21/4871 ,  H01L23/142 ,  H01L23/36 ,  H01L23/367 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/11 ,  H01L24/19 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04105 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/20 ,  H01L2224/211 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/73267 ,  H01L2224/82039 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/3011 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013

Abstract: A method and apparatus provide an integrated circuit package with improved heat dissipation and easier fabrication. The integrated circuit package includes a thinned semiconductor die attached to a heat spreader using a thermally conductive material. The thinned die reduces the thermal resistance of the die/heat spreader combination to improve heat extraction from the die as well as eliminating processing steps in fabrication. Additionally, the thinned die becomes more compliant as it takes on the thermal/mechanical properties of the heat spreader to reduce stress-induced cracking of the die.

Abstract translation: 一种方法和装置提供具有改进的散热和更容易制造的集成电路封装。 集成电路封装包括使用导热材料附着到散热器的薄化半导体管芯。 减薄的模头降低了模具/散热器组合的热阻，以改善从模具的热提取以及消除制造中的加工步骤。 此外，薄型模具变得更加柔顺，因为它承受散热器的热/机械性能，以减少模具的应力引起的开裂。

公开(公告)号：US09461355B2

公开(公告)日：2016-10-04

申请号：US13853977

申请日：2013-03-29

Applicant: Vijay K. Nair ,  Chuan Hu ,  Shawna M. Liff ,  Larry E. Mosley

Inventor： Vijay K. Nair ,  Chuan Hu ,  Shawna M. Liff ,  Larry E. Mosley

IPC: H01Q1/38 ,  H01Q1/22 ,  G06F1/16 ,  H01Q23/00 ,  H01L23/00 ,  H01L23/29 ,  H01L23/66 ,  H01L21/56 ,  H01L23/31

CPC classification number: H01Q7/06 ,  G06F1/16 ,  H01F1/0054 ,  H01L21/565 ,  H01L21/568 ,  H01L23/295 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/66 ,  H01L24/17 ,  H01L24/19 ,  H01L24/96 ,  H01L2223/6672 ,  H01L2223/6677 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/24137 ,  H01L2224/24195 ,  H01L2924/01029 ,  H01L2924/05442 ,  H01L2924/12042 ,  H01L2924/1421 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/181 ,  H01L2924/186 ,  H01L2924/19011 ,  H01L2924/19042 ,  H01L2924/19102 ,  H01L2924/19105 ,  H01Q1/2283 ,  H01Q1/2291 ,  H01Q23/00 ,  H01L2924/00

Abstract: A method apparatus and material are described for radio frequency passives and antennas. In one example, an electronic component has a synthesized magnetic nanocomposite material with aligned magnetic domains, a conductor embedded within the nanocomposite material, and contact pads extending through the nanocomposite material to connect to the conductor.

Abstract translation: 无线电频率无源和天线描述了一种方法装置和材料。 在一个示例中，电子部件具有具有对准磁畴的合成磁性纳米复合材料，嵌入在纳米复合材料内的导体以及延伸穿过纳米复合材料以连接到导体的接触垫。

公开(公告)号：US08936967B2

公开(公告)日：2015-01-20

申请号：US13069601

申请日：2011-03-23

Applicant: Chuan Hu ,  Shawna M. Liff ,  Gregory S. Clemons

Inventor： Chuan Hu ,  Shawna M. Liff ,  Gregory S. Clemons

IPC: H01L21/44 ,  H05K1/18 ,  H01L23/00

CPC classification number: H01L24/17 ,  H01L21/563 ,  H01L23/3121 ,  H01L23/3142 ,  H01L23/49816 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L2224/10126 ,  H01L2224/10135 ,  H01L2224/10156 ,  H01L2224/1131 ,  H01L2224/11332 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/13021 ,  H01L2224/13111 ,  H01L2224/16111 ,  H01L2224/16113 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/1624 ,  H01L2224/2929 ,  H01L2224/73103 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81139 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81805 ,  H01L2224/81815 ,  H01L2224/83192 ,  H01L2924/00011 ,  H01L2924/00012 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H05K1/181 ,  H01L2924/01083 ,  H01L2924/00014

Abstract: The present disclosure relates to the field of fabricating microelectronic packages, wherein cavities are formed in a dielectric layer deposited on a first substrate to maintain separation between soldered interconnections. In one embodiment, the cavities may have sloped sidewalls. In another embodiment, a solder paste may be deposited in the cavities and upon heating solder structures may be formed. In other embodiments, the solder structures may be placed in the cavities or may be formed on a second substrate to which the first substrate may be connected. In still other embodiments, solder structures may be formed on both the first substrate and a second substrate. The solder structures may be used to form solder interconnects by contact and reflow with either contact lands or solder structures on a second substrate.

公开(公告)号：US20140299999A1

公开(公告)日：2014-10-09

申请号：US13859659

申请日：2013-04-09

Applicant: Chuan Hu ,  Qing Ma ,  Chia-Pin Chiu

Inventor： Chuan Hu ,  Qing Ma ,  Chia-Pin Chiu

IPC: H01L23/48 ,  H01L21/56

CPC classification number: H01L23/481 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/49894 ,  H01L24/19 ,  H01L24/96 ,  H01L25/0652 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/24137 ,  H01L2224/73209 ,  H01L2224/81005 ,  H01L2224/92133 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/00

Abstract: Embodiments of the present disclosure are directed towards techniques and configurations for integrated circuit package assemblies including a glass solder mask layer and/or bridge. In one embodiment, an apparatus includes one or more build-up layers having electrical routing features and a solder mask layer composed of a glass material, the solder mask layer being coupled with the one or more build-up layers and having openings disposed in the solder mask layer to allow coupling of package-level interconnect structures with the electrical routing features through the one or more openings. Other embodiments may be described and/or claimed.

Abstract translation: 本公开的实施例涉及包括玻璃焊接掩模层和/或桥的集成电路封装组件的技术和配置。 在一个实施例中，一种装置包括具有电路径特征的一个或多个堆积层和由玻璃材料组成的焊接掩模层，该焊接掩模层与一个或多个堆积层耦合并且具有设置在 焊接掩模层，以允许封装级互连结构与电路由特征通过一个或多个开口耦合。 可以描述和/或要求保护其他实施例。

公开(公告)号：US20140167217A1

公开(公告)日：2014-06-19

申请号：US13719836

申请日：2012-12-19

Applicant: Chuan Hu ,  Dingying Xu ,  Yoshihiro Tomita

Inventor： Chuan Hu ,  Dingying Xu ,  Yoshihiro Tomita

IPC: H01L23/538 ,  H01L21/768

CPC classification number: H01L25/50 ,  H01L21/561 ,  H01L21/568 ,  H01L21/76838 ,  H01L23/3128 ,  H01L23/5389 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/24 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/91 ,  H01L24/96 ,  H01L25/0655 ,  H01L25/16 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/27002 ,  H01L2224/27003 ,  H01L2224/27334 ,  H01L2224/2784 ,  H01L2224/29078 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2224/27 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/00

Abstract: Embodiments of the present disclosure are directed to techniques and configurations for an integrated circuit (IC) package having one or more dies connected to an integrated circuit substrate by an interface layer. In one embodiment, the interface layer may include an anisotropic portion configured to conduct electrical signals in the out-of-plane direction between one or more components, such as a die and an integrated circuit substrate. In another embodiment, the interface layer may be a dielectric or electrically insulating layer. In yet another embodiment, the interface layer may include an anisotropic portion that serves as an interconnect between two components, a dielectric or insulating portion, and one or more interconnect structures that are surrounded by the dielectric or insulating portion and serve as interconnects between the same or other components. Other embodiments may be described and/or claimed.

Abstract translation: 本公开的实施例涉及具有通过界面层连接到集成电路基板的一个或多个管芯的集成电路（IC）封装的技术和配置。 在一个实施例中，界面层可以包括各向异性部分，其被配置为在诸如管芯和集成电路基板的一个或多个部件之间的面外方向上传导电信号。 在另一个实施例中，界面层可以是介电层或电绝缘层。 在另一个实施例中，界面层可以包括用作两个部件之间的互连的各向异性部分，电介质或绝缘部分，以及由电介质或绝缘部分包围并用作相互之间的互连的一个或多个互连结构 或其他组件。 可以描述和/或要求保护其他实施例。

公开(公告)号：US08541876B2

公开(公告)日：2013-09-24

申请号：US11242176

申请日：2005-09-30

Applicant: Daoqiang Lu ,  Chuan Hu ,  Gilroy J. Vandentop ,  Shriram Ramanathan ,  Rajashree Baskaran ,  Valery M. Dubin

Inventor： Daoqiang Lu ,  Chuan Hu ,  Gilroy J. Vandentop ,  Shriram Ramanathan ,  Rajashree Baskaran ,  Valery M. Dubin

IPC: H01L23/10

CPC classification number: H01L24/83 ,  H01L21/4871 ,  H01L23/3735 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/18161 ,  H01L2924/19106 ,  H01L2924/00

Abstract: A method of fabricating a microelectronic package having a direct contact heat spreader, a package formed according to the method, a die-heat spreader combination formed according to the method, and a system incorporating the package. The method comprises metallizing a backside of a microelectronic die to form a heat spreader body directly contacting and fixed to the backside of the die thus yielding a die-heat spreader combination. The package includes the die-heat spreader combination and a substrate bonded to the die.

Abstract translation: 一种制造具有直接接触散热器的微电子封装的方法，根据该方法形成的封装，根据该方法形成的模具散热器组合以及包含封装的系统。 该方法包括金属化微电子管芯的背面以形成直接接触并固定到管芯背面的散热器主体，从而产生模具散热器组合。 该封装包括模具散热器组合和与模具结合的衬底。

公开(公告)号：US20110147440A1

公开(公告)日：2011-06-23

申请号：US12643084

申请日：2009-12-21

Applicant: Chuan Hu

Inventor： Chuan Hu

IPC: B23K1/20 ,  B23K31/02 ,  B23K35/02

CPC classification number: H05K1/0271 ,  B23K1/0018 ,  B23K1/203 ,  B23K3/0623 ,  B23K2101/40 ,  H01L24/11 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/05647 ,  H01L2224/10135 ,  H01L2224/10145 ,  H01L2224/11442 ,  H01L2224/11474 ,  H01L2224/1148 ,  H01L2224/11849 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/16238 ,  H01L2224/81139 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/3841 ,  H05K1/11 ,  H05K13/0465 ,  H05K2201/10734 ,  Y10T428/12222 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An interconnection technology may use molded solder to define solder balls. A mask layer may be patterned to form cavities and solder paste deposited in the cavities. Upon heating, solder balls are formed. The cavity is defined by spaced walls to keep the solder ball from bridging during a bonding process. In some embodiments, the solder bumps connected to the solder balls may have facing surfaces which are larger than the facing surfaces of the solder ball.

Abstract translation: 互连技术可以使用模制焊料来限定焊球。 掩模层可以被图案化以形成沉积在空腔中的空腔和焊膏。 加热时，形成焊球。 空腔由间隔壁限定，以在焊接过程中保持焊球不起桥接作用。 在一些实施例中，连接到焊球的焊料凸块可以具有大于焊球的相对表面的相对表面。

公开(公告)号：US07682876B2

公开(公告)日：2010-03-23

申请号：US11957355

申请日：2007-12-14

Applicant: Daoqiang Lu ,  Chuan Hu

Inventor： Daoqiang Lu ,  Chuan Hu

IPC: H01L21/00

CPC classification number: H01L24/83 ,  H01L23/3735 ,  H01L24/32 ,  H01L2224/04026 ,  H01L2224/29111 ,  H01L2224/32507 ,  H01L2224/83193 ,  H01L2224/83801 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/01028 ,  H01L2924/00014

Abstract: Embodiments relate to electronic assemblies and methods for forming electronic assemblies. One method includes providing a die and a copper heat spreader that are to be coupled to one another through a thermal interface material. A layer of tin is formed on the copper heat spreader. The heat spreader and the die are clamped together with the tin positioned between the heat spreader and the die. The assembly is heated so that the tin melts and forms at least one intermetallic compound with copper from the heat spreader. The heat spreader is then coupled to the die through the intermetallic compound.

Abstract translation: 实施例涉及用于形成电子组件的电子组件和方法。 一种方法包括提供待通过热界面材料彼此耦合的管芯和铜散热器。 在铜散热器上形成一层锡。 散热器和模具与放置在散热器和模具之间的锡夹紧在一起。 加热组件使得锡从散热器中熔化并与铜形成至少一种金属间化合物。 然后通过金属间化合物将散热器耦合到管芯。

公开(公告)号：US20090166852A1

公开(公告)日：2009-07-02

申请号：US11967860

申请日：2007-12-31

Applicant: Chuan Hu

Inventor： Chuan Hu

IPC: H01L23/34 ,  H01L21/48

CPC classification number: H01L23/373 ,  H01L23/3736 ,  H01L23/42 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L24/81 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29309 ,  H01L2224/29311 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/32225 ,  H01L2224/732 ,  H01L2224/73253 ,  H01L2224/8384 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A method comprises providing a layer of nano particles between a semiconductor die and a slug; and sintering the layer of nano particles to provide thermal interface material to bond the semiconductor die to a heat spreader formed by the slug. The sintering temperature of the nano particles is around 50° C. to around 200° C.

Abstract translation: 一种方法包括在半导体管芯和块之间提供一层纳米颗粒; 并且烧结所述纳米颗粒层以提供热界面材料以将所述半导体管芯结合到由所述块塞形成的散热器。 纳米颗粒的烧结温度约为50℃至约200℃