公开(公告)号：US10927472B2

公开(公告)日：2021-02-23

申请号：US16212435

申请日：2018-12-06

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Peter Mardilovich ,  Anthony M. Fuller ,  Qingqiao Wei

IPC: C25D11/04 ,  B81C1/00 ,  C25D11/26 ,  C25D11/02 ,  C25D11/08 ,  C25D11/10 ,  C25D11/12 ,  C25D11/16 ,  C25D11/24

Abstract: A method of forming a micro-structure involves forming a multi-layered structure including i) an oxidizable material layer on a substrate and ii) another oxidizable material layer on the oxidizable material layer. The oxidizable material layer is formed of an oxidizable material having an expansion coefficient, during oxidation, that is more than 1. The method further involves forming a template, including a plurality of pores, from the other oxidizable material layer, and growing a nano-pillar inside each pore. The nano-pillar has a predefined length that terminates at an end. A portion of the template is selectively removed to form a substantially even plane that is oriented in a position opposed to the substrate. A material is deposited on at least a portion of the plane to form a film layer thereon, and the remaining portion of the template is selectively removed to expose the nano-pillars.

公开(公告)号：US10479080B2

公开(公告)日：2019-11-19

申请号：US16120262

申请日：2018-09-02

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Rio Rivas ,  Anthony M. Fuller ,  Ed Friesen

IPC: B41J2/14

Abstract: In an embodiment, a fluid ejection device includes a substrate with a fluid slot formed therein, a chamber layer formed on the substrate defining fluid chambers on both sides of the fluid slot, a thin-film layer between the substrate and chamber layer that defines an ink feedhole (IFH) between the fluid slot and the chamber layer, and a chamber layer extension that forms a bridge across the IFH between two chambers.

公开(公告)号：US10287697B2

公开(公告)日：2019-05-14

申请号：US15438074

申请日：2017-02-21

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Peter Mardilovich ,  Qingqiao Wei ,  Irina Nikolaevna Milonova ,  Anthony M. Fuller

IPC: C25D11/12 ,  C25D1/00 ,  B81C1/00 ,  C25D11/24 ,  C25D11/26 ,  C25D11/04 ,  C25D11/10

Abstract: In an example of a method for making a nano-structure, an aluminum layer is partially anodized to form a porous anodic alumina structure. The aluminum layer is positioned on an oxidizable material layer. The porous anodic alumina structure is exposed to partial anisotropic etching to form tracks within the porous anodic alumina structure. A remaining portion of the aluminum layer is further anodized to form paths where the tracks are formed. The oxidizable material layer is anodized to from an oxide, where the oxide grows through the paths formed within the porous anodic alumina structure to form a set of super nano-pillars.

公开(公告)号：US09498953B2

公开(公告)日：2016-11-22

申请号：US14762958

申请日：2013-01-23

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Anthony M. Fuller ,  Rio Rivas ,  Kellie Susanne Jensen

IPC: B41J2/135 ,  B41J2/14 ,  C23C28/00

CPC classification number: B41J2/1433 ,  B41J2/14129 ,  B41J2202/13 ,  C23C28/32 ,  C23C28/321 ,  C23C28/34 ,  C23C28/341 ,  C23C28/345

Abstract: A printhead die includes a SiO2 layer grown into a surface of a silicon substrate, and a dielectric layer deposited onto an interior surface area of a substrate. Multiple termination rings are formed around the interior surface area. Each ring is defined by an absence of the dielectric layer. A berm is located in between each termination ring. Each berm is defined by the presence of the dielectric layer.

Abstract translation: 打印头芯片包括生长在硅衬底的表面中的SiO 2层和沉积在衬底的内表面区域上的介电层。 在内表面区域周围形成多个端接环。 每个环由不存在电介质层限定。 每个终端环之间都设有护堤。 每个护堤由介电层的存在来定义。

公开(公告)号：US20160319445A1

公开(公告)日：2016-11-03

申请号：US15203825

申请日：2016-07-07

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Peter Mardilovich ,  Qingqiao Wei ,  Anthony M. Fuller

IPC: C25D1/00 ,  C25D11/02 ,  B01D69/02 ,  B01D63/08 ,  B01D67/00

CPC classification number: C25D1/006 ,  B01D63/088 ,  B01D67/0065 ,  B01D69/02 ,  B01D2325/028 ,  B01L3/502746 ,  B01L3/502753 ,  B81B2203/0361 ,  B81C1/00031 ,  C25D11/02

Abstract: A method of forming capped nano-pillars on a substrate includes forming a template on the substrate, the template defining nano-pores having a first width. The nano-pores are partially filled to define nano-pillar stem portions of a first thickness corresponding to the first width. The nano-pores are re-shaped to define re-shaped nano-pore sections having a second width different than the first width. The re-shaped nano-pore sections are at least partially filled to define nano-pillar cap portions of a second thickness corresponding to the second width. The method further includes removing the template.

Abstract translation: 在衬底上形成封盖纳米柱的方法包括在衬底上形成模板，该模板限定具有第一宽度的纳米孔。 纳米孔被部分填充以限定对应于第一宽度的第一厚度的纳米柱茎部分。 重新形成纳米孔以形成具有不同于第一宽度的第二宽度的重新形状的纳米孔部分。 重新形成的纳米孔部分至少部分地被填充以限定对应于第二宽度的第二厚度的纳米柱帽部分。 该方法还包括移除模板。

公开(公告)号：US20140320566A1

公开(公告)日：2014-10-30

申请号：US13872314

申请日：2013-04-29

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Kellie S. Jensen ,  Rio Rivas ,  Anthony M. Fuller

IPC: B41J2/01 ,  B41J29/00

CPC classification number: B41J2/01 ,  B41J2/14129 ,  B41J29/00 ,  B41J2202/13

Abstract: In one example implementation, a printhead die includes a SiO2 layer grown into a surface of a silicon substrate, a dielectric layer formed on the surface over an interior area of the substrate, a first termination ring surrounding the interior area and defined by an absence of the dielectric layer, a berm surrounding the first termination ring and defined by the presence of the dielectric layer, a damage detection conductor formed under the berm on the SiO2 layer, and a second termination ring surrounding the berm and defined by an absence of the dielectric layer.

Abstract translation: 在一个示例性实施例中，打印头芯片包括生长到硅衬底的表面中的SiO 2层，形成在衬底的内部区域上的表面上的电介质层，围绕内部区域并由不存在 电介质层，围绕第一端接环并由电介质层的存在限定的护套，形成在SiO2层上的护堤下方的损伤检测导体，以及围绕护堤并由不存在电介质限定的第二端接环 层。