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公开(公告)号:US12001183B2
公开(公告)日:2024-06-04
申请号:US17186678
申请日:2021-02-26
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Martin Foltin , William Edward White , Aalap Tripathy , Harvey Edward White, Jr.
IPC: G05B19/042 , G06F9/54
CPC classification number: G05B19/0423 , G06F9/544 , G06F9/546 , G05B2219/21063 , G05B2219/25257
Abstract: Systems and methods are provided for enabling coexistence of Information Technology (IT) systems and Operational Technology (OT) systems, where advanced computing functionality realized by the IT systems can be applied to legacy applications and incumbent hardware technologies resident in the OT systems. A distributed control node (DCN) implemented between the IT and OT systems may comprise a microcontroller system partitioned into two processor clusters. Microservices associated with the IT systems are provisioned to a high performance processor cluster, and legacy applications running bare metal associated with the OT systems are provisioned to a real-time processor cluster. Partitioning of the microcontroller system allows for interoperability between the microservices and the legacy applications.
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42.
公开(公告)号:US11947928B2
公开(公告)日:2024-04-02
申请号:US17017557
申请日:2020-09-10
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Craig Warner , Eun Sub Lee , Sai Rahul Chalamalasetti , Martin Foltin
CPC classification number: G06F7/5443 , G06F9/3867 , G06F9/522 , G06F40/20 , G06N3/063
Abstract: Systems and methods are provided for a multi-die dot-product engine (DPE) to provision large-scale machine learning inference applications. The multi-die DPE leverages a multi-chip architecture. For example, a multi-chip interface can include a plurality of DPE chips, where each DPE chip performs inference computations for performing deep learning operations. A hardware interface between a memory of a host computer and the plurality of DPE chips communicatively connects the plurality of DPE chips to the memory of the host computer system during an inference operation such that the deep learning operations are spanned across the plurality of DPE chips. Due to the multi-die architecture, multiple silicon devices are allowed to be used for inference, thereby enabling power-efficient inference for large-scale machine learning applications and complex deep neural networks. The multi-die DPE can be used to build a multi-device DNN inference system performing specific applications, such as object recognition, with high accuracy.
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公开(公告)号:US11861429B2
公开(公告)日:2024-01-02
申请号:US17049031
申请日:2018-04-30
Applicant: Hewlett Packard Enterprise Development LP
Inventor: John Paul Strachan , Dejan S. Milojicic , Martin Foltin , Sai Rahul Chalamalasetti , Amit S. Sharma
Abstract: In some examples, a device includes a first processing core comprising a resistive memory array to perform an analog computation, and a digital processing core comprising a digital memory programmable with different values to perform different computations responsive to respective different conditions. The device further includes a controller to selectively apply input data to the first processing core and the digital processing core.
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公开(公告)号:US11322545B2
公开(公告)日:2022-05-03
申请号:US17041382
申请日:2018-04-27
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Amit S. Sharma , John Paul Strachan , Martin Foltin
IPC: H01L29/66 , H01L21/02 , H01L27/24 , H01L29/161 , H01L29/808
Abstract: Devices and methods are provided. In one aspect, a device for driving a memristor array includes a substrate including a well having a bottom layer, a first wall and a second wall. The substrate is formed of a strained layer of a first semiconductor material. A vertical JFET is formed in the well. The vertical JFET includes a vertical gate region formed in a middle portion of the well with a gate region height less than a depth of the well. A channel region is formed of an epitaxial layer of a second semiconductor wrapped around the vertical gate region. Vertical source regions are formed on both sides of a first end of the vertical gate region, and vertical drain regions are formed on both sides of a second end of the vertical gate region.
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45.
公开(公告)号:US20220075597A1
公开(公告)日:2022-03-10
申请号:US17017557
申请日:2020-09-10
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Craig Warner , Eun Sub Lee , Sai Rahul Chalamalasetti , Martin Foltin
Abstract: Systems and methods are provided for a multi-die dot-product engine (DPE) to provision large-scale machine learning inference applications. The multi-die DPE leverages a multi-chip architecture. For example, a multi-chip interface can include a plurality of DPE chips, where each DPE chip performs inference computations for performing deep learning operations. A hardware interface between a memory of a host computer and the plurality of DPE chips communicatively connects the plurality of DPE chips to the memory of the host computer system during an inference operation such that the deep learning operations are spanned across the plurality of DPE chips. Due to the multi-die architecture, multiple silicon devices are allowed to be used for inference, thereby enabling power-efficient inference for large-scale machine learning applications and complex deep neural networks. The multi-die DPE can be used to build a multi-device DNN inference system performing specific applications, such as object recognition, with high accuracy.
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公开(公告)号:US20210390070A1
公开(公告)日:2021-12-16
申请号:US16903286
申请日:2020-06-16
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Harvey Edward White, JR. , Aalap Tripathy , Martin Foltin , William Edward White
Abstract: A universal industrial I/O interface bridge is provided. The universal industrial I/O interface bridge may be placed between a host and I/O interface cards to translate and manage electronic communications from these and other sources. Embodiments of the application may include (1) an improved hardware module, (2) an I/O discovery process to dynamically reprogram the universal industrial I/O interface bridge depending on the attached I/O card, (3) an abstraction process to illustrate the universal industrial I/O interface bridge and the physical I/O interfaces, (4) an alert plane within the universal industrial I/O interface bridge to respond to I/O alert pins, and (5) a secure distribution process for a firmware update of the universal industrial I/O interface bridge.
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公开(公告)号:US11024379B2
公开(公告)日:2021-06-01
申请号:US16667773
申请日:2019-10-29
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Amit Sharma , John Paul Strachan , Suhas Kumar , Catherine Graves , Martin Foltin , Craig Warner
Abstract: Systems and methods for providing write process optimization for memristors are described. Write process optimization circuitry manipulates the memristor's write operation, allowing the number of cycles in the write process is reduced. Write process optimization circuitry can include write current integration circuitry that measures an integral of a write current over time. The write optimization circuitry can also include shaping circuitry. The shaping circuitry can shape a write pulse, by determining the pulse's termination, width, and slope. The write pulse is shaped depending upon whether the target memristor device exhibits characteristics of “maladroit” cells or “adroit” cells. The pulse shaping circuitry uses the integral and measured write current to terminate the write pulse in a manner that allows the memristor, wherein having maladroit cells and adroit cells, to reach a target state. Thus, utility of memristors is enhanced by realizing an optimized write process with decrease latency and improved efficiency.
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公开(公告)号:US10983865B2
公开(公告)日:2021-04-20
申请号:US15224988
申请日:2016-08-01
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Gregg B. Lesartre , Martin Foltin
Abstract: In various examples, a device comprises a memory. The memory comprises a plurality of dies and logic. The logic may: determine a tolerable bit error rate (BER) of the memory based on whether one of the plurality of dies has failed, and adjust a parameter of the memory based on the tolerable BER.
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公开(公告)号:US20200312406A1
公开(公告)日:2020-10-01
申请号:US16364717
申请日:2019-03-26
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Amit S. Sharma , John Paul Strachan , Catherine Graves , Suhas Kumar , Craig Warner , Martin Foltin
Abstract: A DPE memristor crossbar array system includes a plurality of partitioned memristor crossbar arrays. Each of the plurality of partitioned memristor crossbar arrays includes a primary memristor crossbar array and a redundant memristor crossbar array. The redundant memristor crossbar array includes values that are mathematically related to values within the primary memristor crossbar array. In addition, the plurality of partitioned memristor crossbar arrays includes a block of shared analog circuits coupled to the plurality of partitioned memristor crossbar arrays. The block of shared analog circuits is to determine a dot product value of voltage values generated by at least one partitioned memristor crossbar array of the plurality of partitioned memristor crossbar arrays.
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公开(公告)号:US20200066676A1
公开(公告)日:2020-02-27
申请号:US16075962
申请日:2016-02-05
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Gregg B. Lesartre , Jason H. Culler , Martin Foltin , William S. Jaffe
IPC: H01L25/065 , H01L25/18
Abstract: According to an example, a dual in-line memory module (DIMM) may include a high density package substrate including a plurality of connectors for communicatively interconnecting the DIMM to a system.
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