公开(公告)号：US20160225569A1

公开(公告)日：2016-08-04

申请号：US15093808

申请日：2016-04-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Dawn D. HALL ,  Mark C.H. LAMOREY ,  Anthony K. STAMPER

IPC: H01H59/00

CPC classification number: H01H59/0009 ,  B81B2201/014 ,  G06F17/5068 ,  H01H11/00 ,  Y10T29/49105 ,  Y10T29/49117 ,  Y10T29/49155 ,  Y10T29/49204

Abstract: Normally closed (shut) micro-electro-mechanical switches (MEMS), methods of manufacture and design structures are provided. A structure includes a beam structure that includes a first end hinged on a first electrode and in electrical contact with a second electrode, in its natural state when not actuated.

Abstract translation: 提供常闭（关闭）微机电开关（MEMS），制造方法和设计结构。 一种结构包括梁结构，该梁结构包括铰链在第一电极上并与第二电极电接触的第一端，处于其未被致动的自然状态。

公开(公告)号：US20160161545A1

公开(公告)日：2016-06-09

申请号：US14561830

申请日：2014-12-05

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jeffrey P. GAMBINO ,  Eric D. JOHNSON ,  Ian A. MCCALLUM-COOK ,  Richard A. PHELPS ,  Anthony K. STAMPER ,  Michael J. ZIERAK

IPC: G01R31/26 ,  H01L29/10 ,  H01L29/06

CPC classification number: G01R31/2601 ,  H01L21/26513 ,  H01L22/34 ,  H01L29/0626

Abstract: A high resistivity substrate final resistance test structure, methods of manufacture and testing processes are disclosed. The test structure includes spaced apart implants extending into a high resistivity wafer in at least one kerf region of the wafer. The test structure further includes contacts in direct electrical contact to each of the spaced apart implants.

Abstract translation: 公开了一种高电阻率基板最终电阻测试结构，制造和测试方法。 测试结构包括在晶片的至少一个切痕区域中延伸到高电阻率晶片的间隔开的植入物。 测试结构还包括与每个间隔开的植入物直接电接触的触点。

公开(公告)号：US20160072469A1

公开(公告)日：2016-03-10

申请号：US14940815

申请日：2015-11-13

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： James W. ADKISSON ,  Panglijen CANDRA ,  Thomas J. DUNBAR ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Anthony K. STAMPER ,  Randy L. WOLF

IPC: H03H3/04

CPC classification number: H03H3/04 ,  B81B7/008 ,  B81B7/02 ,  G06F17/5045 ,  H01L41/094 ,  H01L41/0973 ,  H03H3/08 ,  H03H9/0542 ,  H03H9/0547 ,  H03H9/1064 ,  H03H9/1092 ,  H03H9/48 ,  H03H9/542 ,  H03H9/6403 ,  H03H9/6423 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49126 ,  Y10T29/49147 ,  Y10T29/49156

Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam formed above the piezoelectric substrate and at a location in which, upon actuation, the MEMS beam shorts the piezoelectric filter structure by contacting at least one of the plurality of electrodes.

公开(公告)号：US20160071925A1

公开(公告)日：2016-03-10

申请号：US14480215

申请日：2014-09-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Mark D. JAFFE ,  Alvin J. JOSEPH ,  Qizhi LIU ,  Anthony K. STAMPER

IPC: H01L29/06 ,  H01L29/66 ,  H01L21/02 ,  H01L21/764 ,  H01L21/762 ,  H01L21/306 ,  H01L29/78 ,  H01L21/265

CPC classification number: H01L21/76289 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/0273 ,  H01L21/26533 ,  H01L21/266 ,  H01L21/30604 ,  H01L21/76224 ,  H01L21/76283 ,  H01L21/76286 ,  H01L21/764 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/66651 ,  H01L29/66772 ,  H01L29/78

Abstract: A field effect transistor (FET) with an underlying airgap and methods of manufacture are disclosed. The method includes forming an amorphous layer at a predetermined depth of a substrate. The method further includes forming an airgap in the substrate under the amorphous layer. The method further includes forming a completely isolated transistor in an active region of the substrate, above the amorphous layer and the airgap.

公开(公告)号：US20150364367A1

公开(公告)日：2015-12-17

申请号：US14832024

申请日：2015-08-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jeffrey P. GAMBINO ,  Thomas J. HARTSWICK ,  Zhong-Xiang HE ,  Anthony K. STAMPER ,  Eric J. WHITE

IPC: H01L21/768 ,  H01L21/3205 ,  H01L21/288

CPC classification number: H01L21/2885 ,  C25D3/38 ,  C25D5/10 ,  C25D7/123 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/288 ,  H01L21/32053 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76883 ,  H01L21/76885 ,  H01L21/76886 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/485 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/585 ,  H01L24/95 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor structure with low resistance conduction paths and methods of manufacture are disclosed. The method includes forming at least one low resistance conduction path on a wafer, and forming an electroplated seed layer in direct contact with the low resistance conduction path.

Abstract translation: 公开了具有低电阻传导路径的半导体结构和制造方法。 该方法包括在晶片上形成至少一个低电阻传导路径，以及形成与低电阻传导路径直接接触的电镀种子层。

公开(公告)号：US20150249200A1

公开(公告)日：2015-09-03

申请号：US14713327

申请日：2015-05-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： David L. HARAME ,  Stephen E. LUCE ,  Anthony K. STAMPER

IPC: H01L41/083 ,  H01L41/08

CPC classification number: H01L41/083 ,  G06F17/5068 ,  H01L21/84 ,  H01L27/1203 ,  H01L41/081 ,  H01L41/094 ,  H01L41/332 ,  H03H3/02 ,  H03H9/1007 ,  H03H9/173 ,  H03H2001/0064 ,  H03H2003/027 ,  H03H2009/155

Abstract: Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, are provided. The structure includes a single crystalline beam formed from a silicon layer of a silicon on insulator (SOI) substrate; insulator material coating the single crystalline beam; an upper cavity formed above the single crystalline beam, over a portion of the insulator material; a lower cavity formed in lower wafer bonded to an insulator layer of the SOI substrate, below the single crystalline beam and the insulator layer of the SOI substrate; a connecting via that connects the upper cavity to the lower cavity, the connecting via being coated with the insulator material; and a Bulk Acoustic Wave (BAW) filter or Bulk Acoustic Resonator (BAR) in electrical connection with the single crystalline beam.

Abstract translation: 提供了与CMOS器件集成的体声波滤波器和/或体声波谐振器。 该结构包括由绝缘体上硅（SOI）衬底的硅层形成的单晶束; 绝缘体材料涂覆单晶束; 形成在单晶束上方的上腔，超过绝缘体材料的一部分; 在下晶片上形成的下腔体，其结合到SOI衬底的绝缘体层，在单晶束和SOI衬底的绝缘体层之下; 连接通孔，其将上腔体连接到下腔体，连接通孔被绝缘体材料涂覆; 以及与单晶束电连接的体声波（BAW）滤波器或体声声谐振器（BAR）。

公开(公告)号：US20150042418A1

公开(公告)日：2015-02-12

申请号：US14522676

申请日：2014-10-24

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： James W. ADKISSON ,  Panglijen CANDRA ,  Thomas J. DUNBAR ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Anthony K. STAMPER ,  Randy L. WOLF

IPC: H03H9/64 ,  G06F17/50 ,  B81B7/00 ,  B81B7/02 ,  H03H9/54 ,  H03H9/48

CPC classification number: H03H3/04 ,  B81B7/008 ,  B81B7/02 ,  G06F17/5045 ,  H01L41/094 ,  H01L41/0973 ,  H03H3/08 ,  H03H9/0542 ,  H03H9/0547 ,  H03H9/1064 ,  H03H9/1092 ,  H03H9/48 ,  H03H9/542 ,  H03H9/6403 ,  H03H9/6423 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49126 ,  Y10T29/49147 ,  Y10T29/49156

Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam formed above the piezoelectric substrate and at a location in which, upon actuation, the MEMS beam shorts the piezoelectric filter structure by contacting at least one of the plurality of electrodes.

Abstract translation: 本文公开了可切换和/或可调滤波器，制造方法和设计结构。 形成滤波器的方法包括形成至少一个包括形成在压电基片上的多个电极的压电滤波器结构。 该方法还包括形成微电子机械结构（MEMS），该微机电结构（MEMS）包括形成在压电基板上方的MEMS光束，并且在致动时，MEMS光束通过使多个或多个之中的至少一个接触而使压电滤波器结构短路的位置 的电极。

公开(公告)号：US20140014480A1

公开(公告)日：2014-01-16

申请号：US14027768

申请日：2013-09-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Felix P. ANDERSON ,  Edward C. COONEY, III ,  Thomas L. MCDEVITT ,  Anthony K. STAMPER

IPC: H01H59/00

CPC classification number: H01H59/0009 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Vertical integrated MEMS switches, design structures and methods of fabricating such vertical switches is provided herein. The method of manufacturing a MEMS switch, includes forming at least two vertically extending vias in a wafer and filling the at least two vertically extending vias with a metal to form at least two vertically extending wires. The method further includes opening a void in the wafer from a bottom side such that at least one of the vertically extending wires is moveable within the void.

Abstract translation: 本文提供垂直集成MEMS开关，制造这种垂直开关的设计结构和方法。 制造MEMS开关的方法包括在晶片中形成至少两个垂直延伸的通孔，并用金属填充至少两个垂直延伸的通孔以形成至少两个垂直延伸的导线。 该方法还包括从底侧打开晶片中的空隙，使得垂直延伸的线中的至少一个可在空隙内移动。

公开(公告)号：US20140008741A1

公开(公告)日：2014-01-09

申请号：US14024171

申请日：2013-09-11

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： David L. HARAME ,  Stephen E. LUCE ,  Anthony K. STAMPER

IPC: H01L41/09 ,  G06F17/50 ,  H01L41/332

CPC classification number: H01L41/083 ,  G06F17/5068 ,  H01L21/84 ,  H01L27/1203 ,  H01L41/081 ,  H01L41/094 ,  H01L41/332 ,  H03H3/02 ,  H03H9/1007 ,  H03H9/173 ,  H03H2001/0064 ,  H03H2003/027 ,  H03H2009/155

Abstract: Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam from a silicon layer on an insulator. The method further includes providing a coating of insulator material over the single crystalline beam. The method further includes forming a via through the insulator material. The method further includes providing a sacrificial material in the via and over the insulator material. The method further includes providing a lid on the sacrificial material. The method further includes providing further sacrificial material in a trench of a lower wafer. The method further includes bonding the lower wafer to the insulator, under the single crystalline beam. The method further includes venting the sacrificial material and the further sacrificial material to form an upper cavity above the single crystalline beam and a lower cavity, below the single crystalline beam.

Abstract translation: 提供了与CMOS器件集成的体声波滤波器和/或体声波谐振器，制造方法和设计结构。 该方法包括从绝缘体上的硅层形成单晶束。 该方法还包括在单晶束上提供绝缘体材料涂层。 该方法还包括通过绝缘体材料形成通孔。 该方法还包括在通孔和绝缘体材料上提供牺牲材料。 该方法还包括在牺牲材料上提供盖子。 该方法还包括在下晶片的沟槽中提供另外的牺牲材料。 该方法还包括在单晶束下将下晶片接合到绝缘体。 该方法还包括排出牺牲材料和另外的牺牲材料，以在单晶束之下形成单结晶束上方的上空腔和在单晶束下方的下腔。

公开(公告)号：US20140001599A1

公开(公告)日：2014-01-02

申请号：US14013409

申请日：2013-08-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Fen CHEN ,  Jeffrey P. GAMBINO ,  Zhong-Xiang HE ,  Tom C. LEE ,  John C. MALINOWSKI ,  Anthony K. STAMPER

IPC: H01L49/02

CPC classification number: H01L28/20 ,  H01C7/006 ,  H01C17/075 ,  H01L21/7685 ,  H01L23/5228 ,  H01L23/53295 ,  H01L24/11 ,  H01L28/24 ,  H01L2224/0231 ,  H01L2224/02313 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05181 ,  H01L2224/05546 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/013

Abstract: Disclosed are methods for forming a thin film resistor and terminal bond pad simultaneously. A method includes simultaneously forming a terminal bond pad on a terminal wire and a thin film resistor on two other wires.

Abstract translation: 公开了同时形成薄膜电阻器和端子接合焊盘的方法。 一种方法包括在端子线上同时形成端子接合焊盘和在另外两条导线上形成薄膜电阻器。