Abstract:
A photoacoustic sensor includes a first MEMS device and a second MEMS device. The first MEMS device includes a first MEMS component including an optical emitter, and a first optically transparent cover wafer-bonded to the first MEMS component, wherein the first MEMS component and the first optically transparent cover form a first closed cavity. The second MEMS device includes a second MEMS component including a pressure detector, and a second optically transparent cover wafer-bonded to the second MEMS component, wherein the second MEMS component and the second optically transparent cover form a second closed cavity.
Abstract:
An apparatus for in-situ calibration of a photoacoustic sensor is provided. The apparatus includes a calibration unit that includes at least one processor configured to calculate calibration information. A light emitter of the photoacoustic sensor is configured to emit an electromagnetic spectrum and the photoacoustic sensor is configured to provide at least two measurement signals based on at least two electromagnetic spectra. The calibration unit is configured to compare the at least two measurement signals to obtain the calibration information and apply the calibration information to the photoacoustic sensor to perform the in-situ calibration.
Abstract:
Shown is a wafer arrangement for a gas sensor including a first substrate and a sescond substrate. The first substrate includes a MEMS membrane associated with a sensor element and an emitter element configured to emit electromagnetic radiation. The second substrate is arranged on top of the first substrate and defines at least a portion of a chamber disposed adjacent to the MEMS membrane.
Abstract:
A sensor circuit includes a plurality of half-bridge sensor circuits. The sensor circuit includes a sensor output value determination circuit configured to determine a sensor output value. The sensor circuit further includes an error determination circuit configured to generate an error signal based on a first half-bridge sensor signal and a second half-bridge sensor signal. The sensor circuit further includes a control circuit configured to control a selection of one of the first half-bridge sensor circuit and the second half-bridge sensor circuit for providing one of the first half-bridge sensor signal and the second half-bridge sensor signal to the sensor output value determination circuit to determine the sensor output value.
Abstract:
A microelectromechanical light emitter component comprises an emitter layer structure of the microelectromechanical light emitter component and an inductive structure of the microelectromechanical light emitter component. The inductive structure of the microelectromechanical light emitter component is configured to generate current in the emitter layer structure by electromagnetic induction, such that the emitter layer structure emits light. The emitter layer structure is electrically insulated from the inductive structure.
Abstract:
A photo-acoustic gas sensor includes a light emitter unit having a light emitter configured to emit a beam of light pulses with a predetermined repetition frequency and a wavelength corresponding to an absorption band of a gas to be sensed, and a detector unit having a microphone. The light emitter unit is arranged so that the beam of light pulses traverses an area configured to accommodate the gas. The detector unit is arranged so that the microphone can receive a signal oscillating with the repetition frequency.
Abstract:
A magnetic sensor may comprise a first linear output sensing element configured to sense a first component of an external magnetic field associated with a first axis. The first linear output sensing element may provide a first output voltage corresponding to the first component of the external magnetic field. The magnetic sensor may also comprise a second linear output sending component configured to sense a second component of the external magnetic field associated with a second axis. The second axis may be substantially orthogonal to the first axis. The second linear output sensing element may provide a second output voltage corresponding to the second component of the external magnetic field. The first output voltage and the second output voltage may be provided to determine an angle, associated with the external magnetic field, corresponding to a plane including the first axis and the second axis.
Abstract:
Shown is a gas sensor including a sensor element, a measurement chamber and an emitter element. The sensor element has a MEMS membrane which is arranged in a first substrate region. Furthermore, the measurement chamber is embodied to receive a measurement gas.
Abstract:
A sensor comprises a matrix switch that includes a number of switching elements configured in a matrix configuration. The sensor comprises one or more sensor elements configured in a sensor matrix configuration. A controller operates to dynamically select one or more signal routes via the switching elements to communicate data from one or more sensor elements of the sensor matrix. The matrix switch can operate to dynamically route multiple signal routes between sensor elements of the sensor to another component based on a set of criteria.
Abstract:
An example of a device comprises a signal generator to generate a signal causing a magnetic self test field for a magneto-resistive sensing element. A signal input is configures to receive a first sensor signal at a first time instant before the magnetic self test field is applied and a second sensor signal at a second time instant after the magnetic self test field is applied. An evaluation circuit is configured to determine information indicating a safe operation based on an evaluation of the first sensor signal and the second sensor signal.