ZERO-MISALIGNMENT TWO-VIA STRUCTURES

    公开(公告)号:US20220084931A1

    公开(公告)日:2022-03-17

    申请号:US17537406

    申请日:2021-11-29

    Abstract: A device package and a method of forming a device package are described. The device package includes an interposer with interconnects on an interconnect package layer and a conductive layer on the interposer. The device package has dies on the conductive layer, where the package layer includes a zero-misalignment two-via stack (ZM2VS) and a dielectric. The ZM2VS is directly coupled to the interconnect. The ZM2VS may further include the dielectric on a conductive pad, a first via on a first seed, and the first seed on a top surface of the conductive pad, where the first via extends through dielectric. The ZM2VS may also have a conductive trace on dielectric, and a second via on a second seed, the second seed is on the dielectric, where the conductive trace connects to first and second vias, where second via connects to an edge of conductive trace opposite from first via.

    FIRST LAYER INTERCONNECT FIRST ON CARRIER APPROACH FOR EMIB PATCH

    公开(公告)号:US20200286847A1

    公开(公告)日:2020-09-10

    申请号:US16646084

    申请日:2018-01-12

    Abstract: A patch structure of an integrated circuit package comprises a core having a first side facing downwards and a second side facing upwards. Forming a first solder resist (SR) layer on the first side of the core, wherein the first SR layer comprises a first layer interconnect (FLI) and has a first set of one or more microbumps thereon to bond to one or more logic die. Forming a second solder resist (SR) layer on the second side of the core, wherein the second SR layer has a second set of one or more microbumps thereon to bond with a substrate. One or more bridge dies includes a respective sets of bumps, wherein the one or more bridge dies is disposed flipped over within the core such that the respective sets of bumps face downward and connect to the first set of one or more microbumps in the FLI.

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