公开(公告)号：US20200027883A1

公开(公告)日：2020-01-23

申请号：US16495600

申请日：2017-03-31

Applicant: Intel Corporation

Inventor： Van H. Le ,  Abhishek A. Sharma ,  Ravi Pillarisetty ,  Gilbert W. Dewey ,  Shriram Shivaraman ,  Tristan A. Tronic ,  Sanaz Gardner ,  Tahir Ghani

IPC: H01L27/108 ,  H01L29/786 ,  H01L27/12

Abstract: Substrates, assemblies, and techniques for an apparatus, where the apparatus includes a gate, where the gate includes a first gate side and a second gate side opposite to the first gate side, a gate dielectric on the gate, where the gate dielectric includes a first gate dielectric side and a second gate dielectric side opposite to the first gate dielectric side, a first dielectric, where the first dielectric abuts the first gate side, the first gate dielectric side, the second gate side, and the second gate dielectric side, a channel, where the gate dielectric is between the channel and the gate, a source coupled with the channel, and a drain coupled with the channel, where the first dielectric abuts the source and the drain. In an example, the first dielectric and the gate dielectric help insulate the gate from the channel, the source, and the drain.