Thin film solar cell and fabrication method therefor
    43.
    发明授权
    Thin film solar cell and fabrication method therefor 失效
    薄膜太阳能电池及其制造方法

    公开(公告)号:US06521826B2

    公开(公告)日:2003-02-18

    申请号:US09723277

    申请日:2000-11-29

    Applicant: Kenji Wada

    Inventor: Kenji Wada

    Abstract: An n-type polysilicon thin film, an intrinsic polysilicon thin film and a p-type polysilicon thin film are formed on a transparent conductive film of a glass substrate by the plasma enhanced CVD method at a plasma excitation frequency of 81.36 MHz so as to obtain a photoelectric conversion layer. The n-type polysilicon thin film and the intrinsic polysilicon thin film are then formed so that the crystallization ratio of the n-doped layer located on the incident light side becomes equal to or greater than the crystallization ratio of the intrinsic layer. Thus, a thin film solar cell having an appropriate structure of a junction interface between the n-layer and the intrinsic layer is obtained.

    Abstract translation: 在81.36MHz的等离子体激发频率下,通过等离子体增强CVD法在玻璃基板的透明导电膜上形成n型多晶硅薄膜,本征多晶硅薄膜和p型多晶硅薄膜,以获得 光电转换层。 然后形成n型多晶硅薄膜和本征多晶硅薄膜,使得位于入射光侧的n掺杂层的结晶比变得等于或大于本征层的结晶比。 因此,获得具有n层和本征层之间的结界面的适当结构的薄膜太阳能电池。

    Positive resist composition, pattern forming method using the composition, and compound for use in the composition
    44.
    发明授权
    Positive resist composition, pattern forming method using the composition, and compound for use in the composition 有权
    正性抗蚀剂组合物,使用该组合物的图案形成方法和用于该组合物的化合物

    公开(公告)号:US08507174B2

    公开(公告)日:2013-08-13

    申请号:US12673096

    申请日:2008-08-11

    Abstract: A positive resist composition comprising (A) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (B) a resin capable of increasing the solubility in an alkali developer by the action of an acid, and (C) a compound having a specific structure, which decomposes by the action of an acid to generate an acid, a pattern forming method using the positive resist composition, and a compound for use in the positive resist composition are provided as a positive resist composition exhibiting good performance in terms of pattern profile, line edge roughness, pattern collapse, sensitivity and resolution in normal exposure (dry exposure), immersion exposure and double exposure, a pattern forming method using the positive resist composition and a compound for use in the positive resist composition.

    Abstract translation: 一种正型抗蚀剂组合物,其包含(A)在通过光化射线或辐射照射时能够产生酸的化合物,(B)能够通过酸的作用增加在碱性显影剂中的溶解度的树脂,和(C) 提供具有特定结构的化合物,其通过酸的作用而分解以产生酸,使用正性抗蚀剂组合物的图案形成方法和用于正性抗蚀剂组合物的化合物作为正性抗蚀剂组合物,其表现出良好的性能 使用正性抗蚀剂组合物的图案形成方法和用于正性抗蚀剂组合物的化合物的图案形成方法,线条粗糙度,图案塌陷,在正常曝光(干曝光)中的灵敏度和分辨率,浸渍曝光和双重曝光。

    Resist composition and pattern forming method using the same
    48.
    发明授权
    Resist composition and pattern forming method using the same 有权
    抗蚀剂组合物和图案形成方法使用其

    公开(公告)号:US07718344B2

    公开(公告)日:2010-05-18

    申请号:US11864049

    申请日:2007-09-28

    Abstract: A resist composition, includes: (B) a polymer having a group capable of decomposing under an action of an acid and having a weight average molecular weight of 1,000 to 5,000, of which solubility in an alkali developer increases under an action of an acid; and (Z) a compound containing a sulfonium cation having a structure represented by formula (Z-1): wherein Y1 to Y13 each independently represents a hydrogen atom or a substituent, and adjacent members of Y1 to Y13 may combine with each other to form a ring; and Z represents a single bond or a divalent linking group.

    Abstract translation: 抗蚀剂组合物包括:(B)具有能够在酸的作用下分解并且重均分子量为1,000至5,000的基团的聚合物,其在碱性显影剂中的溶解度在酸的作用下增加; 和(Z)含有具有由式(Z-1)表示的结构的锍阳离子的化合物:其中Y 1至Y 13各自独立地表示氢原子或取代基,并且Y 1至Y 13的相邻成员可以相互结合形成 戒指; Z表示单键或二价连接基团。

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