公开(公告)号：US5797068A

公开(公告)日：1998-08-18

申请号：US706252

申请日：1996-09-04

Applicant: Naohito Otsuki ,  Kyoji Kamei ,  Akiyoshi Inoue ,  Kiyoshi Ishikawa ,  Shin Sakurai ,  Takuo Matsumura

Inventor： Naohito Otsuki ,  Kyoji Kamei ,  Akiyoshi Inoue ,  Kiyoshi Ishikawa ,  Shin Sakurai ,  Takuo Matsumura

IPC: B41J13/00 ,  B41J29/00 ,  G03G15/00 ,  G03G21/16

CPC classification number: G03G21/1638 ,  G03G21/1619 ,  G03G2215/00544 ,  G03G2215/00586

Abstract: A compact image formation apparatus forms an image on an image support, discharges the image support supporting an image to an outside of the apparatus and facilitates jam removal. The image formation apparatus has all operation portions for performing operations from the outside of the image formation apparatus located on three operation faces including a top face, a front, and either a left side face or a right side face of the image formation apparatus. A rear face and the other of the left side face or right side face of the image formation apparatus are set to be non-operation faces.

Abstract translation: 紧凑的图像形成装置在图像载体上形成图像，将支持图像的图像载体排出到装置的外部，并且便于去除卡纸。 图像形成装置具有用于从位于包括图像形成装置的顶面，前面和左侧面或右侧面的三个操作面上的图像形成装置的外部执行操作的所有操作部分。 图像形成装置的左侧面或右侧面的背面和另一方被设定为非操作面。

公开(公告)号：US20130082700A1

公开(公告)日：2013-04-04

申请号：US13604225

申请日：2012-09-05

Applicant: Natsuhiko Mizutani ,  Tetsuo Kobayashi ,  Kiyoshi Ishikawa

Inventor： Natsuhiko Mizutani ,  Tetsuo Kobayashi ,  Kiyoshi Ishikawa

IPC: G01R33/48

CPC classification number: G01R33/26 ,  G01R33/482

Abstract: The present invention has an object to provide a nuclear magnetic resonance imaging apparatus or the like that avoids a region with zero sensitivity of an optical magnetometer and allows imaging by strong magnetic resonance when a common magnetic field is used as a bias field of an optical magnetometer and as a magnetostatic field to be applied to a sample. When a direction of a magnetostatic field application unit applying a magnetostatic field to a sample is a z direction, alkali metal cell of a scalar magnetometer is arranged so as not to overlap a region to be imaged in a z direction, and so as not to intersect the region to be imaged in an in-plane direction perpendicular to the z direction.

Abstract translation: 本发明的目的是提供一种避免光学磁力计具有零灵敏度的区域的核磁共振成像设备等，并且当使用公共磁场作为光学磁力计的偏置场时允许通过强磁共振成像 并且作为应用于样品的静磁场。 当向样品施加静磁场的静磁场施加单元的方向是az方向时，标量磁力计的碱金属单元被布置成不与在az方向上要成像的区域重叠，并且不与 在与z方向垂直的面内方向成像的区域。

公开(公告)号：US20130017501A1

公开(公告)日：2013-01-17

申请号：US13489862

申请日：2012-06-06

Applicant: Tsuyoshi Nakamura ,  Kiyoshi Ishikawa

Inventor： Tsuyoshi Nakamura ,  Kiyoshi Ishikawa

IPC: G03F7/20

CPC classification number: H01L21/0273 ,  G03F7/0397 ,  G03F7/325 ,  G03F7/405

Abstract: A method of forming a resist pattern, comprising: a step of forming a resist film on a substrate using a resist composition containing a base component (A) which exhibits decreased solubility in an organic solvent under action of acid and an acid-generator component (B) which generates acid upon exposure; a step of subjecting the resist film to exposure; a step of patterning the resist film by a negative-tone development using a developing solution containing the organic solvent to form a resist pattern; a step of applying a coating material to the resist pattern, thereby forming a coating film; a step of performing a thermal treatment at a temperature lower than the softening point of the resist pattern, thereby heat shrinking the coating film to narrow an interval between the resist pattern; and a step of removing the coating film.

Abstract translation: 一种形成抗蚀剂图案的方法，包括：使用含有在酸和酸产生剂成分的作用下在有机溶剂中显示降低的溶解度的碱成分（A）的抗蚀剂组合物在基材上形成抗蚀剂膜的步骤（ B）暴露时产生酸; 使抗蚀剂膜曝光的步骤; 使用含有有机溶剂的显影液形成抗蚀剂图案的负色发展图案化抗蚀剂膜的步骤; 将涂料施加到抗蚀剂图案上，从而形成涂膜的步骤; 在低于抗蚀剂图案的软化点的温度下进行热处理的步骤，从而使涂膜热收缩以缩小抗蚀剂图案之间的间隔; 以及除去涂膜的工序。

公开(公告)号：US08043798B2

公开(公告)日：2011-10-25

申请号：US10644738

申请日：2003-08-21

Applicant: Tsuyoshi Nakamura ,  Tasuku Matsumiya ,  Kiyoshi Ishikawa ,  Yoshiki Sugeta ,  Toshikazu Tachikawa

Inventor： Tsuyoshi Nakamura ,  Tasuku Matsumiya ,  Kiyoshi Ishikawa ,  Yoshiki Sugeta ,  Toshikazu Tachikawa

IPC: G03C5/00

CPC classification number: G03F7/40 ,  C23F1/02 ,  H01L21/0273 ,  Y10S430/143

Abstract: It is disclosed a method of forming fine patterns comprising: covering a substrate having photoresist patterns thereon made of a photoresist composition which is sensitive to high energy light rays with wavelength of 200 nm or shorter or electron beam radiation, with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent substantially completely. The present invention provides a method of forming fine patterns whereby fine patterns having pattern width or diameter of 100 nm or shorter and being excellent in uniformity (in-plane uniformity), etc. can be formed by ultrafine processing using high energy light rays with wavelength of 200 nm or shorter or electron beams.

Abstract translation: 公开了一种形成精细图案的方法，包括：在其上涂覆由光致抗蚀剂组合物制成的光刻胶图案的基板，其对波长为200nm或更短的高能量光线或电子束辐射敏感， 形成精细图案，进行热处理以引起覆盖剂的热收缩，使得由于所得热收缩作用而使相邻光致抗蚀剂图案之间的间隔减小，并且基本上完全除去覆盖剂。 本发明提供一种形成精细图案的方法，由此可以通过使用具有波长的高能量光线的超细处理来形成图案宽度或直径为100nm以下并且均匀性（面内均匀性）等优异的精细图案 为200nm以下或电子束。

公开(公告)号：US08035542B2

公开(公告)日：2011-10-11

申请号：US12726072

申请日：2010-03-17

Applicant: Kiyoshi Ishikawa

Inventor： Kiyoshi Ishikawa

IPC: H03M1/66

CPC classification number: H03M1/468 ,  H03M1/804

Abstract: A digital-to-analog converter generates a voltage from power supply and ground voltages, generates upper and lower limit reference voltages for a reference width which regards the generated voltage as an intermediate potential, converts a change in an analog input signal with respect to the upper and lower limit reference voltages into a digital code, and performs a control in order to achieve a sample and hold of the analog input signal.

Abstract translation: 数模转换器从电源和接地电压产生电压，产生将发电电压视为中间电位的参考宽度的上限和下限参考电压，将模拟输入信号的变化相对于 将上限参考电压和下限参考电压转换为数字码，并执行控制以实现模拟输入信号的采样和保持。

公开(公告)号：US20100255429A1

公开(公告)日：2010-10-07

申请号：US12671805

申请日：2008-07-03

Applicant: Kiyoshi Ishikawa ,  Jun Koshiyama ,  Kazumasa Wakiya

Inventor： Kiyoshi Ishikawa ,  Jun Koshiyama ,  Kazumasa Wakiya

IPC: G03F7/20

CPC classification number: H01L21/0273 ,  G03F7/0035 ,  G03F7/40

Abstract: Provided are a fine pattern forming method for forming a fine resin pattern having an excellent shape on a supporting body, and a coat film forming material used in the fine pattern forming method. A photosensitive resin composition is applied on the supporting body, selectively exposed and developed to form a first resin pattern. On the surface of the first resin pattern, a coat film composed of a water-soluble resin film is formed to form a coat pattern, then, on the supporting body whereupon the coat pattern is formed, a resin composition containing a photo-acid generating agent is applied, and the entire surface is exposed. Then, the work is cleaned by a solvent, and a second resin pattern wherein a resin film is formed on the surface of the coat pattern is formed. The coat film is formed by using the coat film forming material composed of an aqueous solution containing a water soluble resin and a water soluble cross-linking agent.

Abstract translation: 提供一种用于在支撑体上形成具有优异形状的精细树脂图案的精细图案形成方法以及用于精细图案形成方法的涂膜形成材料。 将感光性树脂组合物涂布在支撑体上，选择性地曝光和显影以形成第一树脂图案。 在第一树脂图案的表面上，形成由水溶性树脂膜构成的涂膜以形成涂层图案，然后在形成涂层图案的支撑体上形成含有产生光酸的树脂组合物 涂料，整个表面露出。 然后，通过溶剂清洗工件，并且形成在涂层图案的表面上形成树脂膜的第二树脂图案。 通过使用由含有水溶性树脂和水溶性交联剂的水溶液构成的涂膜形成材料形成涂膜。

公开(公告)号：US20070042288A1

公开(公告)日：2007-02-22

申请号：US10554380

申请日：2004-04-22

Applicant: Takuma Hojo ,  Kiyoshi Ishikawa ,  Tsuyoshi Nakamura ,  Tasuku Matsumiya

Inventor： Takuma Hojo ,  Kiyoshi Ishikawa ,  Tsuyoshi Nakamura ,  Tasuku Matsumiya

IPC: G03C1/00

CPC classification number: G03F7/40 ,  G03F7/0397 ,  G03F7/2059 ,  Y10S430/106 ,  Y10S430/111

Abstract: The invention provides a positive photoresist composition which exhibits a high level of etching resistance and attains high resolution, and enables the formation of a fine pattern using an electron beam exposure step, as well as a method for forming a resist pattern that uses the positive photoresist composition. This positive photoresist composition for use with EB contains a resin component (A) that exhibits increased alkali solubility under the action of acid, an acid generator component (B) that generates acid on exposure, and an organic solvent (C), wherein the component (A) comprises a copolymer containing a first structural unit (a1) derived from hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate ester having an alcoholic hydroxyl group, and a portion of the hydroxyl groups of the structural units (a1) and the alcoholic hydroxyl groups of the structural units (a2) are protected with acid dissociable, dissolution inhibiting groups.

Abstract translation: 本发明提供一种正光致抗蚀剂组合物，其具有高水平的耐蚀刻性并获得高分辨率，并且能够使用电子束曝光步骤形成精细图案，以及形成使用正性光致抗蚀剂的抗蚀剂图案的方法 组成。 用于EB的正性光致抗蚀剂组合物含有在酸作用下表现出增加的碱溶性的树脂组分（A），暴露时产生酸的酸产生剂组分（B）和有机溶剂（C），其中组分 （A）包含含有由羟基苯乙烯衍生的第一结构单元（a1）和由具有醇羟基的（甲基）丙烯酸酯衍生的第二结构单元（a2）和结构单元的一部分羟基的共聚物 （a1）和结构单元（a2）的醇羟基被酸解离，溶解抑制基团保护。

公开(公告)号：US20060063102A1

公开(公告)日：2006-03-23

申请号：US10536711

申请日：2003-12-01

Applicant: Naotaka Kubota ,  Kiyoshi Ishikawa ,  Mitsuru Sato ,  Tasuku Matsumiya

Inventor： Naotaka Kubota ,  Kiyoshi Ishikawa ,  Mitsuru Sato ,  Tasuku Matsumiya

IPC: G03C1/76 ,  G03C1/492

CPC classification number: G03F7/32 ,  G03F7/0397 ,  G03F7/325 ,  G03F7/40

Abstract: There is provided a positive resist composition which, during resist pattern formation, can prevent the collapse of very fine resist patterns during the drying step following developing. This positive resist composition is used in a resist pattern formation method comprising a step, within the lithography process, for substituting a liquid remaining on the substrate following alkali developing with a critical drying liquid, and then drying this critical drying liquid by causing passage through a critical state. The positive resist composition comprises a resin component (A), which has an alkali-soluble unit content of less than 20 mol %, contains an acid dissociable, dissolution inhibiting group, and displays increased alkali solubility under action of acid, an acid generator component (B) that generates acid on exposure, and an organic solvent (C) for dissolving the components (A) and (B), and moreover, the component (A) comprises a structural unit (a1) containing an acid dissociable, dissolution inhibiting group, a structural unit (a2) containing a lactone unit, and a structural unit (a3) containing a polycyclic group with an alcoholic hydroxyl group.

Abstract translation: 提供了抗蚀剂组合物，其在抗蚀剂图案形成期间可以防止在显影之后的干燥步骤期间非常精细的抗蚀剂图案的塌陷。 该抗蚀剂组合物用于抗蚀剂图案形成方法，该方法包括以下步骤：在光刻工艺中，用临界干燥液代替碱显影后残留在基材上的液体，然后通过使其通过 临界状态。 正型抗蚀剂组合物包含具有小于20摩尔％的碱溶性单元含量的树脂组分（A），其含有酸解离溶解抑制基团，并且在酸的作用下显示出增加的碱溶解度，酸产生剂组分 （A）和（B）成分的有机溶剂（C），（A）成分含有酸解离，抑制溶解的结构单元（a1） 基团，含有内酯单元的结构单元（a2）和含有醇羟基的多环基团的结构单元（a3）。

公开(公告)号：US06606586B1

公开(公告)日：2003-08-12

申请号：US09305277

申请日：1999-05-05

Applicant: Kiyoshi Ishikawa

Inventor： Kiyoshi Ishikawa

IPC: G06F1750

CPC classification number: G06F17/5018 ,  G06F2217/16

Abstract: A physical quantity at a given position in an analysis space is expressed by using a Poisson's equation, a Green's function and the Green's theorem. The equation thus obtained is substituted into an unknown parameter in the equation, to be expanded into infinite series. Stopping the expansion when the equation is expanded to some degree, the equation can be expressed only with known parameters such as boundary conditions. Through calculating the respective values of integrations included in terms of the series by the Monte Carlo method and adding them up, a physical quantity at a given position can be thereby obtained. Further, by the same method, a parasitic element constant at a given position in the analysis space can be also obtained. With this method, a simulation is achieved for obtaining a physical quantity and a parasitic element constant at a given position in an analysis space, without solving a matrix equation.

Abstract translation: 分析空间中给定位置的物理量用泊松方程，格林函数和格林定理表示。 将这样获得的方程式代入方程式中的未知参数，以扩展为无限序列。 当方程扩展到某种程度时，停止扩展，方程式只能用已知参数（如边界条件）表示。 通过利用蒙特卡洛方法计算包含在该系列中的积分值，并将它们相加，从而可以得到给定位置的物理量。 此外，通过相同的方法，也可以获得分析空间中的给定位置处的寄生元件常数。 利用这种方法，在求解矩阵方程式的情况下，可以获得在分析空间中给定位置处的物理量和寄生元素常数的模拟。

公开(公告)号：US5955241A

公开(公告)日：1999-09-21

申请号：US956792

申请日：1997-10-23

Applicant: Mitsuru Sato ,  Kiyoshi Ishikawa ,  Hiroyuki Yamazaki ,  Yoshiki Sugeta ,  Toshimasa Nakayama

Inventor： Mitsuru Sato ,  Kiyoshi Ishikawa ,  Hiroyuki Yamazaki ,  Yoshiki Sugeta ,  Toshimasa Nakayama

IPC: G03F7/004 ,  G03F7/038 ,  G03C1/492

CPC classification number: G03F7/038 ,  G03F7/0045 ,  Y10S430/12 ,  Y10S430/122

Abstract: The present invention provides a chemical-amplification-type negative resist composition and a method for forming a negative resist pattern using the same. The chemical-amplification-type negative resist composition comprises (A) an alkali-soluble resin, (B) an acid-generating agent, and (C) a compound capable of causing crosslinking reaction in the presence of an acid, wherein the ingredient (A) is a mixture comprising (i) a copolymer which comprises constitutional repeating units of a hydroxystyrene type, has a weight average molecular weight of 2,000 to 4,000, and has a ratio of the weight average molecular weight to the number average molecular weight falling within 1.0 to 2.0; and (ii) a hydroxystyrene homopolymer, and wherein the dissolution rate of the ingredient (A) at 23.degree. C. in a 2.38% by weight tetramethylammonium hydroxide aqueous solution falls within 80 to 300 nm/s.

Abstract translation: 本发明提供化学放大型负光刻胶组合物和使用其形成负光刻胶图案的方法。 化学增幅型负性抗蚀剂组合物包含（A）碱溶性树脂，（B）酸产生剂和（C）在酸存在下能够引起交联反应的化合物，其中成分（ A）是包含（i）包含羟基苯乙烯型结构重复单元的共聚物，其重均分子量为2,000至4,000的共聚物，并且其重均分子量与数均分子量的比率 1.0〜2.0; 和（ii）羟基苯乙烯均聚物，并且其中成分（A）在23℃在2.38重量％四甲基氢氧化铵水溶液中的溶解速率为80-300nm / s。