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    BACKSIDE COUPLED SYMMETRIC VARACTOR STRUCTURE
    45.
    发明申请
    BACKSIDE COUPLED SYMMETRIC VARACTOR STRUCTURE 有权
    后置耦合对称变流器结构

    公开(公告)号：US20170077093A1

    公开(公告)日：2017-03-16

    申请号：US15298124

    申请日：2016-10-19

    Applicant: QUALCOMM Incorporated

    Inventor： Daeik Daniel KIM ,  David Francis BERDY ,  Je-Hsiung Jeffrey LAN ,  Changhan Hobie YUN ,  Jonghae KIM

    IPC: H01L27/08 ,  H01L29/93 ,  H01L21/78 ,  H01L29/66

    CPC classification number: H01L27/0808 ,  H01L21/7624 ,  H01L21/76264 ,  H01L21/78 ,  H01L27/1203 ,  H01L29/66174 ,  H01L29/66181 ,  H01L29/93

    Abstract: A symmetric varactor structure may include a first varactor component. The first varactor component may include a gate operating as a second plate, a gate oxide layer operating as a dielectric layer and a body operating as a first plate of an area modulating capacitor. In addition, doped regions may surround the body of the first varactor component. The first varactor component may be supported on a backside by an isolation layer. The symmetric varactor structure may also include a second varactor component electrically coupled to the backside of the first varactor component through a backside conductive layer.

    Abstract translation: 对称变容二极管结构可以包括第一变容二极管组件。 第一变容二极管分量可以包括作为第二板操作的栅极，作为电介质层工作的栅极氧化物层和作为区域调制电容器的第一板工作的主体。 此外，掺杂区域可围绕第一变容二极管部件的主体。 第一变容二极管组件可以由隔离层在背面支撑。 对称变容二极管结构还可以包括通过背侧导电层电耦合到第一变容二极管部件的背侧的第二变容二极管部件。

    INDUCTIVE DEVICE
    48.
    发明申请
    INDUCTIVE DEVICE 有权

    公开(公告)号：US20240387092A1

    公开(公告)日：2024-11-21

    申请号：US18317366

    申请日：2023-05-15

    Applicant: QUALCOMM Incorporated

    Inventor： Kai LIU ,  Jui-Yi CHIU ,  Jonghae KIM ,  Nosun PARK ,  Je-Hsiung LAN

    IPC: H01F17/00 ,  H01F27/02 ,  H01F27/06 ,  H01F27/255 ,  H01F27/28 ,  H01F27/29

    Abstract: An inductive device includes multiple packaged devices, each including a body and a conductor layer within the body and a set of external connectors. The conductor layer of a packaged device includes a set of conductive lines electrically connected to the set of external connectors of the packaged device. Conductive lines of two packaged devices of the inductive device are at an angle relative to one another. External connectors of the packaged devices are coupled to one another to electrically connect the sets of conductive lines to define one or more coils, each coil having multiple turns and each turn including a conductive line of each packaged device.

    ANTENNA ON GLASS WITH THROUGH GLASS VIA SIDEWALL SHIELDING STRUCTURE
    49.
    发明公开
    ANTENNA ON GLASS WITH THROUGH GLASS VIA SIDEWALL SHIELDING STRUCTURE 审中-公开

    公开(公告)号：US20240313405A1

    公开(公告)日：2024-09-19

    申请号：US18601578

    申请日：2024-03-11

    Applicant: QUALCOMM Incorporated

    Inventor： Je-Hsiung LAN ,  Sang-June PARK ,  Jonghae KIM

    IPC: H01Q9/04 ,  H01Q1/38

    CPC classification number: H01Q9/0407 ,  H01Q1/38

    Abstract: Disclosed are techniques for a structure of an antenna apparatus. In an aspect, an antenna apparatus includes a glass substrate having an upper surface, a lower surface, and a side portion; a first conductive structure on the upper surface of the glass substrate; a second conductive structure on the lower surface of the glass substrate; and a through-glass via (TGV) structure including a first conductive film on a sidewall of a first TGV hole, the first conductive film being configured to couple the first conductive structure to the second conductive structure, wherein the side portion includes a plurality of metalized recess structures having recess sidewalls and a plurality of second conductive films respectively on the recess sidewalls of the plurality of metalized recess structures, each recess sidewall having a shape corresponding to a partial TGV hole.

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