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    Gap-fill methods
    43.
    发明授权
    Gap-fill methods 有权
    间隙填充方法

    公开(公告)号：US09324604B2

    公开(公告)日：2016-04-26

    申请号：US14755471

    申请日：2015-06-30

    Applicant: Rohm and Haas Electronic Materials LLC ,  Rohm and Haas Electronic Materials Korea Ltd.

    Inventor： Jae Hwan Sim ,  Jae-Bong Lim ,  Jung Kyu Jo ,  Bon-ki Ku ,  Cheng-Bai Xu

    IPC: H01L21/31 ,  H01L21/762 ,  H01L21/3105

    CPC classification number: H01L21/76224 ,  H01L21/0276 ,  H01L21/31058

    Abstract: Provided are gap-fill methods. The methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled, wherein the gaps have a width of 50 nm or less; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a first polymer comprising a crosslinkable group, a second polymer comprising a chromophore, wherein the first polymer and the second polymer are different, a crosslinker, an acid catalyst and a solvent, wherein the gap-fill composition is disposed in the gaps; (c) heating the gap-fill composition at a temperature to cause the first polymer to self-crosslink and/or to crosslink with the second polymer to form a crosslinked polymer; (d) forming a photoresist layer over the substrate comprising the crosslinked polymer-filled gaps; (e) patternwise exposing the photoresist layer to activating radiation; and (f) developing the photoresist layer to form a photoresist pattern. The methods find particular applicability in the manufacture of semiconductor devices for the filling of high aspect ratio gaps with an antireflective coating material.

    Abstract translation: 提供间隙填充方法。 所述方法包括：（a）在衬底的表面上提供具有浮雕图像的半导体衬底，所述浮雕图像包括要填充的多个间隙，其中所述间隙具有50nm或更小的宽度; （b）在所述浮雕图像上施加间隙填充组合物，其中所述间隙填充组合物包含包含可交联基团的第一聚合物，包含发色团的第二聚合物，其中所述第一聚合物和所述第二聚合物不同，交联剂， 酸催化剂和溶剂，其中间隙填充组合物设置在间隙中; （c）在温度下加热间隙填充组合物以使第一聚合物与第二聚合物自交联和/或交联以形成交联聚合物; （d）在包含交联聚合物填充间隙的基底上形成光致抗蚀剂层; （e）将光致抗蚀剂层图形化地曝光于激活辐射; 和（f）显影光致抗蚀剂层以形成光致抗蚀剂图案。 该方法在用抗反射涂层材料填充高纵横比间隙的半导体器件的制造中特别适用。

    Gap-fill methods
    44.
    发明授权
    Gap-fill methods 有权
    间隙填充方法

    公开(公告)号：US09209067B2

    公开(公告)日：2015-12-08

    申请号：US14542428

    申请日：2014-11-14

    Applicant: Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC

    Inventor： Jong Keun Park ,  Cheng-Bai Xu ,  Phillip D. Hustad ,  Mingqi Li

    IPC: H01L21/762

    CPC classification number: H01L21/76224

    Abstract: Provided are gap-fill methods. The methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a self-crosslinkable polymer and a solvent, wherein the self-crosslinkable polymer comprises a first unit comprising a polymerized backbone and a crosslinkable group pendant to the backbone; and (c) heating the gap-fill composition at a temperature to cause the polymer to self-crosslink. The methods find particular applicability in the manufacture of semiconductor devices for the filling of high aspect ratio gaps.

    Abstract translation: 提供间隙填充方法。 所述方法包括：（a）提供在衬底的表面上具有浮雕图像的半导体衬底，所述浮雕图像包括要填充的多个间隙; （b）在所述浮雕图像上施加间隙填充组合物，其中所述间隙填充组合物包含自交联聚合物和溶剂，其中所述自交联聚合物包含第一单元，所述第一单元包含聚合主链和可交联基团， 骨干 和（c）在温度下加热间隙填充组合物以使聚合物自交联。 该方法在用于填充高纵横比间隙的半导体器件的制造中具有特别的适用性。

    Photoacid generator and photoresist comprising same
    45.
    发明授权
    Photoacid generator and photoresist comprising same 有权
    光生酸产生剂和包含其的光致抗蚀剂

    公开(公告)号：US08956799B2

    公开(公告)日：2015-02-17

    申请号：US13711679

    申请日：2012-12-12

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Emad Aqad ,  Cheng-Bai Xu ,  Mingqi Li ,  William Williams, III

    IPC: G03F7/004 ,  G03F7/039 ,  G03F7/09

    CPC classification number: C07D493/18 ,  G03F7/0045 ,  G03F7/027 ,  G03F7/0392

    Abstract: A photoacid generator includes those of formula (I): wherein each Ra in formula 1 is independently H, F, a C1-10 nonfluorinated organic group, C1-10 fluorinated organic group, or a combination comprising at least one of the foregoing, provided at least one Ra is F or a C1-10 fluorinated organic group, the C1-10 fluorinated and nonfluorinated organic groups each optionally comprising O, S, N, or a combination comprising at least one of the foregoing heteroatoms; L1 is a linking group comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing; G+ is an onium salt of the formula (II): wherein in formula (II), X is S or I, each R0 is independently C1-30 alkyl group; a polycyclic or monocyclic C3-30 cycloalkyl group; a polycyclic or monocyclic C4-30 aryl group; or a combination comprising at least one of the foregoing, provided at least one R0 is substituted where each R0 is a C6 monocyclic aryl group, and wherein when X is I, a is 2, and where X is S, a is 3, p is 0 or 1, and q is an integer of from 1 to 10.

    Abstract translation: 一种光酸产生剂包括式（I）的那些：其中式1中的每个Ra独立地是H，F，C 1-10非氟化有机基团，C 1-10氟化有机基团或包含至少一个前述的组合， 至少一个R a为F或C 1-10氟化有机基团，所述C 1-10氟化和非氟化有机基团各自任选包含O，S，N或包含至少一个前述杂原子的组合; L 1是包含O，S，N，F的杂原子的连接基团，或包含前述的至少一种的组合; G +是式（II）的鎓盐：其中在式（II）中，X是S或I，每个R 10独立地是C 1-30烷基; 多环或单环C 3-30环烷基; 多环或单环C 4-30芳基; 或包含前述的至少一种的组合，只要至少一个R 0被取代，其中每个R 0是C 6单环芳基，其中当X是I时，a是2，并且其中X是S，a是3，p 为0或1，q为1至10的整数。

    PHOTOACID GENERATOR AND PHOTORESIST COMPRISING SAME
    46.
    发明申请
    PHOTOACID GENERATOR AND PHOTORESIST COMPRISING SAME 有权
    光电发生器和包含相同的光电发生器

    公开(公告)号：US20130084525A1

    公开(公告)日：2013-04-04

    申请号：US13630456

    申请日：2012-09-28

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Emad Aqad ,  Cheng-Bai Xu ,  Mingqi Li ,  Shintaro Yamada ,  William Williams, III

    IPC: C07C309/65 ,  C07C311/09 ,  C07D497/18 ,  C07D313/08 ,  C07D327/04 ,  G03F7/027 ,  C07D493/18

    CPC classification number: G03F7/30 ,  C07C309/65 ,  C07C311/09 ,  C07C2603/74 ,  C07D313/08 ,  C07D313/10 ,  C07D327/04 ,  C07D493/18 ,  C07D497/18 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0397 ,  G03F7/2041

    Abstract: A photoacid generator compound has the formula (I): [A-(CHR1)p]k-(L)-(CH2)m—(C(R2)2)n—SO3−Z+  (I) wherein A is a substituted or unsubstituted, monocyclic, polycyclic, or fused polycyclic C5 or greater cycloaliphatic group optionally comprising O, S, N, F, or a combination comprising at least one of the foregoing, R1 is H, a single bond, or a substituted or unsubstituted C1-30 alkyl group, wherein when R1 is a single bond, R1 is covalently bonded to a carbon atom of A, each R2 is independently H, F, or C1-4 fluoroalkyl, wherein at least one R2 is not hydrogen, L is a linking group comprising a sulfonate group, a sulfonamide group, or a C1-30 sulfonate or sulfonamide-containing group, Z is an organic or inorganic cation, p is an integer of 0 to 10, k is 1 or 2, m is an integer of 0 or greater, and n is an integer of 1 or greater. A precursor compound to the photoacid generator, a photoresist composition including the photoacid generator, and a substrate coated with the photoresist composition, are also disclosed.

    Abstract translation: 光生酸化合物具有式（I）：其中A是取代基的[A-（CHR1）p] k-（L） - （CH2）m-（C（R2）2）n-SO3-Z +（I） 或任选包含O，S，N，F或包含前述至少之一的组合的未取代的单环，多环或稠合多环C 5或更多脂环族基团，R 1是H，单键或取代或未取代的C1 -30烷基，其中当R 1为单键时，R 1与A的碳原子共价连接，每个R 2独立地为H，F或C 1-4氟烷基，其中至少一个R 2不为氢，L为 包含磺酸酯基，磺酰胺基或C1-30磺酸酯或磺酰胺的基团的连接基团，Z是有机或无机阳离子，p是0至10的整数，k是1或2，m是整数 为0以上，n为1以上的整数。 还公开了光致酸产生剂的前体化合物，包含光致酸产生剂的光致抗蚀剂组合物和涂有光致抗蚀剂组合物的基材。

    Ion implantation methods
    50.
    发明授权
    Ion implantation methods 有权

    公开(公告)号：US09666436B2

    公开(公告)日：2017-05-30

    申请号：US14145726

    申请日：2013-12-31

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Cheng-Bai Xu ,  Cheng Han Wu ,  Dong Won Chung ,  Yoshihiro Yamamoto

    IPC: H01L21/425 ,  H01L21/266 ,  H01L21/3105 ,  H01L21/02 ,  H01L21/027

    CPC classification number: H01L21/266 ,  H01L21/0206 ,  H01L21/02118 ,  H01L21/0273 ,  H01L21/31058

    Abstract: Provided are methods of forming an ion implanted region in a semiconductor device. The methods comprise: (a) providing a semiconductor substrate having a plurality of regions to be ion implanted; (b) forming a photoresist pattern on the semiconductor substrate, wherein the photoresist pattern is formed from a chemically amplified photoresist composition comprising a matrix polymer having acid labile groups, a photoacid generator and a solvent; (c) coating a descumming composition over the photoresist pattern, wherein the descumming composition comprises: a matrix polymer; a free acid; and a solvent; (d) heating the coated semiconductor substrate; (e) contacting the coated semiconductor substrate with a rinsing agent to remove residual descumming composition and scum from the substrate; and (f) ion implanting the plurality of regions of the semiconductor substrate using the photoresist pattern as an implant mask. The methods find particular applicability in the manufacture of semiconductor devices.

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