公开(公告)号：US11289150B2

公开(公告)日：2022-03-29

申请号：US17196183

申请日：2021-03-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngmin Jo ,  Taehyo Kim ,  Daeseok Byeon ,  Seungwon Lee

IPC: G11C11/40 ,  G11C11/4072 ,  G11C5/06 ,  G11C11/4093 ,  G11C11/4099

Abstract: A memory system is provided. The memory system includes a memory device having a plurality of memory cells; and a memory controller configured to control the memory device to: store write data in first memory cells from among the plurality of memory cells, identify a current charge amount of a first cell string including at least one of the first memory cells and a current charge amount of a second cell string adjacent to the first cell string, and store dummy data in at least one memory cell connected to the first cell string or the second cell string based on the current charge amount of the first cell string and the current charge amount of the second cell string.

公开(公告)号：US11180373B2

公开(公告)日：2021-11-23

申请号：US16183146

申请日：2018-11-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae Song ,  Keunwook Shin ,  Hyeonjin Shin ,  Changseok Lee ,  Changhyun Kim ,  Kyungeun Byun ,  Seungwon Lee ,  Eunkyu Lee

IPC: H01L23/00 ,  C01B32/186 ,  H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  C23C16/26 ,  C23C16/50 ,  H01L27/24 ,  C01B32/182 ,  B82Y30/00 ,  B82Y40/00

Abstract: Provided are nanocrystalline graphene and a method of forming the nanocrystalline graphene through a plasma enhanced chemical vapor deposition process. The nanocrystalline graphene may have a ratio of carbon having an sp2 bonding structure to total carbon within the range of about 50% to 99%. In addition, the nanocrystalline graphene may include crystals having a size of about 0.5 nm to about 100 nm.

公开(公告)号：US20210335427A1

公开(公告)日：2021-10-28

申请号：US17121015

申请日：2020-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taehyo KIM ,  Daeseok Byeon ,  Youngmin JO ,  Seungwon Lee

IPC: G11C16/22 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11582 ,  H01L27/11573 ,  H01L25/065 ,  H01L25/18 ,  H01L23/00

Abstract: A memory device including: a memory area having a first memory block and a second memory block; and a control logic configured to control the first memory block and the second memory block in a first mode and a second mode, wherein in the first mode only a control operation for the first memory block is executable, and in the second mode control operations for the first memory block and the second memory block are executable, wherein the control logic counts the number of accesses made to the second memory block in the first mode, and stores the number of accesses as scan data in the second memory block.

公开(公告)号：US11120330B2

公开(公告)日：2021-09-14

申请号：US15662225

申请日：2017-07-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younghwan Park ,  Kyounghoon Kim ,  Seungwon Lee ,  Hansu Cho ,  Sukjin Kim

IPC: G06F15/76 ,  G06N3/063 ,  G06N3/04

Abstract: The present disclosure relates to a communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. A Processing Element (PE) implemented in an accelerator in a convolutional neural network, which includes a first buffer configured to transfer input data to one other PE, and a second buffer configured to transmit to an outside output data that is processed on the basis of the input data; and an operation unit configured to generate output data.

公开(公告)号：US11055598B2

公开(公告)日：2021-07-06

申请号：US16233886

申请日：2018-12-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyeongdo Kim ,  Sanghyo Lee ,  Seungwon Lee ,  Jongpil Cho

IPC: G06K19/077 ,  G06K19/07 ,  H02M1/08 ,  H02M3/156 ,  H02M1/00 ,  H02M7/06

Abstract: A smart card includes an antenna to transmit and to receive a radio frequency signal, a rectifier to rectify a signal received through the antenna to output a rectified voltage, a voltage regulator to operate in a first operation mode for stabilizing a level of the rectified voltage and a second operation mode for generating an internal voltage using the rectified voltage, a regulator converter to control the voltage regulator to operate the voltage regulator in one of the first operation and the second operation according to a mode selection signal, a clamp circuit to connect an output terminal of the rectifier to a ground according to the mode selection signal, a load modulator to vary a resistance of the antenna to perform a load modulation, and a regulator controller to generate the mode selection signal according to whether the load modulator is activated or deactivated.

公开(公告)号：US09530088B2

公开(公告)日：2016-12-27

申请号：US15009859

申请日：2016-01-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungwon Lee

IPC: G06K19/00 ,  G06K19/077 ,  G05F1/10

CPC classification number: G06K19/07749 ,  G05F1/10

Abstract: Radio frequency identification (RFID) devices are provided including a contactless internal voltage generator configured to generate a rectification voltage responsive to a radio frequency (RF) input signal and an internal voltage responsive to the generated rectification voltage and a reference voltage; a clock generator configured to sense an amount of current to a sink path of the contactless internal voltage generator and to generate a clock signal using a variable resistance value, the variable resistance value based on the amount of current sensed; and an internal circuit driven by the internal voltage and the clock signal.

Abstract translation: 提供射频识别（RFID）装置，其包括非接触式内部电压发生器，其被配置为响应于产生的整流电压和参考电压而产生响应于射频（RF）输入信号和内部电压的整流电压; 时钟发生器，其被配置为感测到所述非接触式内部电压发生器的汇流通路的电流量，并且使用可变电阻值产生所述可变电阻值，所述可变电阻值基于感测的电流量; 以及由内部电压和时钟信号驱动的内部电路。

公开(公告)号：US09274533B2

公开(公告)日：2016-03-01

申请号：US13961170

申请日：2013-08-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungwon Lee

IPC: G06K19/06 ,  G05F1/10 ,  G06K19/077

CPC classification number: G06K19/07749 ,  G05F1/10

Abstract: Radio frequency identification (RFID) devices are provided including a contactless internal voltage generator configured to generate a rectification voltage responsive to a radio frequency (RF) input signal and an internal voltage responsive to the generated rectification voltage and a reference voltage; a clock generator configured to sense an amount of current to a sink path of the contactless internal voltage generator and to generate a clock signal using a variable resistance value, the variable resistance value based on the amount of current sensed; and an internal circuit driven by the internal voltage and the clock signal.

公开(公告)号：US09196372B2

公开(公告)日：2015-11-24

申请号：US14082304

申请日：2013-11-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungwon Lee ,  Byeonghoon Lee

IPC: G11C11/34 ,  G11C16/26

CPC classification number: G11C16/26

Abstract: Provided are a flash memory device and a method of verifying the same. The flash memory device includes: a memory cell for storing data; a sense amplifier for reading information of the memory cell; a load current input device for providing a load current to the sense amplifier; and a control circuit for controlling the load current input device to provide a load current during a memory cell reading operation, verifying the memory cell by using a program verify voltage if the memory cell is a programmed memory cell, and verifying the memory cell by using a compensated erase verify voltage if the memory cell is an erased memory cell.

Abstract translation: 提供一种闪存器件及其验证方法。 闪存装置包括：用于存储数据的存储单元; 用于读取存储器单元的信息的读出放大器; 用于向感测放大器提供负载电流的负载电流输入装置; 以及用于控制负载电流输入装置以在存储单元读取操作期间提供负载电流的控制电路，如果存储器单元是编程存储器单元，则通过使用程序验证电压来验证存储单元，以及通过使用 如果存储器单元是擦除的存储器单元，则补偿擦除验证电压。