Abstract:
Provided is a quantum dot having a core-shell structure, wherein a core includes a first semiconductor nanocrystal including zinc, tellurium, and selenium, and a semiconductor nanocrystal shell is disposed on the core and includes a Group II-VI compound, wherein the quantum dot further includes phosphorus and fluorine, and the quantum dot does not include cadmium.
Abstract:
A method of transferring a micro light emitting diode (LED) to a pixel array panel includes transferring the micro LED by spraying using an inkjet method, wherein the micro LED comprises an active layer comprising a first portion emitting light in a first direction and a second portion emitting the light in a second direction different from the first direction.
Abstract:
A core shell quantum dot including a core including a first semiconductor nanocrystal and including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core and including a zinc chalcogenide, a method of manufacture thereof, and a device including the same are disclosed, wherein the core shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein in an X-ray photoelectron spectrum of the quantum dot, a peak area for Te oxide to a peak area for Te3d5/2 as an area percentage is less than or equal to about 25%.
Abstract:
Provided is a display apparatus. The display apparatus may include a monolithic device in which a light emitting element array, a transistor array, and a color control member are monolithically provided on one substrate. The display apparatus may include a first layered structure including the light emitting element array, a second layered structure including the transistor array, and a third layered structure including the color control member, wherein the second layered structure may be between the first layered structure and the third layered structure. The light emitting element array may include a plurality of light emitting elements comprising an inorganic material. The plurality of light emitting elements may have a vertical nanostructure.
Abstract:
Example embodiments disclose a smart contact lens for augmented reality and methods of manufacturing and operating the smart contact lens. The smart contact lens includes a first contact lens, a display unit in a center region of the first contact lens, a peripheral device on the first contact lens and around the display unit, the peripheral device being connected to the display unit, and a passivation layer covering the display unit and the peripheral device. The method of manufacturing the smart contact lens includes forming a display unit; mounting the display unit in a center region of a first contact lens, forming a peripheral device on the first contact lens, around the display unit and in connection with the display unit, and forming a passivation layer to cover the display unit and the peripheral device.
Abstract:
A cadmium free quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not include cadmium and includes indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than or equal to about 40 nanometers (nm), an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot includes a valley between about 450 nm to a center wavelength of a first absorption peak, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.2, a quantum dot polymer composite including the same, and a display device including the quantum dot-polymer composite: (Absfirst−Absvalley)/Absfirst=VD.
Abstract:
An image sensor includes an optical sensor layer including a plurality of light-sensitive cells configured to sense light to generate electrical signals, and a color filter array layer disposed on the optical sensor layer and including a plurality of color filters respectively facing the plurality of light-sensitive cells. Each of the plurality of color filters includes a nanostructure in which a first material having a first refractive index and a second material having a second refractive index higher than the first refractive index are arranged. The first material and the second material are alternatively positioned at an interval less than a central wavelength of a color of the color filter. Thus, a thin image sensor having good wavelength selectivity and suitable for obtaining high resolution images is provided.
Abstract:
An image display device includes an eye wearable lens; a display panel embedded inside the eye wearable lens or arranged on a surface of the eye wearable lens, the display panel comprising an array of a plurality of optical elements for forming an image to be projected onto a retina, wherein a resolution of the image formed by the plurality of optical elements is higher on a central portion of the retina than on a peripheral portion of the retina; and an image signal processor for generating an image signal according to image information which is to be displayed on the display panel and for generating a control signal for controlling each of the plurality of optical elements to be turned on/off according to the image signal.
Abstract:
An electrical conductor includes: a first conductive layer including a plurality of ruthenium oxide nanosheets, wherein at least one ruthenium oxide nanosheet of the plurality of ruthenium oxide nanosheets includes a halogen, a chalcogen, a Group 15 element, or a combination thereof on a surface of the ruthenium oxide nanosheet.
Abstract:
A method of forming an amorphous carbon monolayer (ACM) and an electronic device including the ACM are provided. The method includes forming the ACM on a surface of a germanium (Ge) substrate via a chemical vapor deposition (CVD) process. The CVD process includes injecting a reaction gas including carbon-containing gas and hydrogen (H2) gas in to a reaction chamber containing the Ge substrate, wherein a partial pressure of the H2 gas in the reaction chamber may range from 1 Torr to 30 Torr.