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    Display Device and Electronic Device
    42.
    发明申请
    Display Device and Electronic Device 有权

    公开(公告)号：US20250076697A1

    公开(公告)日：2025-03-06

    申请号：US18954090

    申请日：2024-11-20

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Yoshiharu Hirakata ,  Tetsuji ISHITANI ,  Daisuke KUBOTA ,  Ryo HATSUMI ,  Masaru NAKANO ,  Takashi HAMADA

    IPC: G02F1/1333 ,  G02F1/1335 ,  G02F1/1362

    Abstract: A display device including a peripheral circuit portion with high operation stability. The display device includes a first substrate and a second substrate. A first insulating layer is on a first plane of the first substrate, and a second insulating layer is on a first plane of the second substrate. An area of the first plane of the first substrate is the same as an area of the first plane of the second substrate. The first plane of the first substrate and the first plane of the second substrate face each other. A bonding layer is between the first insulating layer and the second insulating layer. A protection film is in contact with the first substrate, the first insulating layer, the bonding layer, the second insulating layer, and the second substrate.

    POWER STORAGE DEVICE AND VEHICLE
    44.
    发明申请
    POWER STORAGE DEVICE AND VEHICLE 有权

    公开(公告)号：US20240405308A1

    公开(公告)日：2024-12-05

    申请号：US18695496

    申请日：2022-09-20

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Yohei MOMMA ,  Tetsuya KAKEHATA ,  Tetsuji ISHITANI ,  Yuji IWAKI ,  Ryota TAJIMA ,  Shuhei YOSHITOMI

    IPC: H01M10/615 ,  B60L58/27 ,  H01M10/44 ,  H01M10/48 ,  H01M10/625 ,  H01M10/63 ,  H01M10/653 ,  H01M50/136 ,  H01M50/213

    Abstract: A power storage device that is less likely to be influenced by an ambient temperature is provided. The power storage device capable of being charged and discharged even in a low-temperature environment is provided. A first secondary battery capable of being charged and discharged even at low temperatures and a general second secondary battery are adjacent to each other in the power storage device. The power storage device having such a structure can use, as an internal heat source in a low-temperature environment, heat generated by charge and discharge of the secondary battery capable of being charged and discharged even at low temperatures. Specifically, the power storage device includes the first secondary battery and the second secondary battery adjacent to each other, the first secondary battery has flexibility, and a value of discharge capacity in discharge at −40° C. is higher than or equal to 50% of a value of discharge capacity in discharge at 25° C.

    FERROELECTRIC DEVICE AND SEMICONDUCTOR DEVICE
    47.
    发明公开
    FERROELECTRIC DEVICE AND SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20230393727A1

    公开(公告)日：2023-12-07

    申请号：US18246367

    申请日：2021-09-17

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Fumiyasu SEINO ,  Tetsuji ISHITANI

    IPC: G06F3/0488 ,  G06F3/04842 ,  G06F3/0481 ,  G06F3/041

    CPC classification number: G06F3/0488 ,  G06F3/04842 ,  G06F3/0481 ,  G06F3/0412 ,  G06F2203/04104

    Abstract: An electronic device capable of operation of a three-dimensional movement is provided. An electronic device capable of performing various types of actuation by simple operation is provided. A display device includes a control portion, a display portion, and a detection portion. The display portion includes a screen displaying an image, and the detection portion has a function of obtaining positional information of a detection target that is in contact with the screen or approaches above the screen and outputting the information to the control portion. The control portion has a function of executing first processing based on first operation, a function of executing second processing when second operation is successively performed after the first operation, and a function of executing third processing when third operation is successively performed after the second operation. The first operation is operation in which two pointed positions are detected on the screen, the second operation is operation in which the two pointed positions move to reduce the distance therebetween, and the third operation is operation in which the two pointed positions move in the normal direction with respect to the screen from the state where they are in contact with the screen.

    METHOD FOR FABRICATING SECONDARY BATTERY AND MANUFACTURING APPARATUS FOR SECONDARY BATTERY
    48.
    发明公开
    METHOD FOR FABRICATING SECONDARY BATTERY AND MANUFACTURING APPARATUS FOR SECONDARY BATTERY 审中-公开

    公开(公告)号：US20230290992A1

    公开(公告)日：2023-09-14

    申请号：US18017191

    申请日：2021-07-27

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shuhei YOSHITOMI ,  Tetsuji ISHITANI ,  Shunpei YAMAZAKI

    IPC: H01M10/04 ,  H01M10/0583

    CPC classification number: H01M10/0431 ,  H01M10/0404 ,  H01M10/0583

    Abstract: At least part of a fabrication process of a secondary battery is automated. A highly reliable secondary battery is provided. The secondary battery is fabricated by placing a first electrode over a first exterior body; placing a separator over the first electrode; placing a second electrode over the separator; dripping an electrolyte on at least one of the first electrode, the separator, and the second electrode; impregnating the at least one of the first electrode, the separator, and the second electrode with the electrolyte; then placing a second exterior body over the first exterior body to cover the first electrode, the separator, and the second electrode; and sealing the first electrode, the separator, and the second electrode with the first exterior body and the second exterior body. The electrolyte is dripped from a position whose shortest distance from a surface where the electrolyte is dripped is greater than 0 mm and less than or equal to 1 mm.

    MANUFACTURING METHOD OF POSITIVE ELECTRODE ACTIVE MATERIAL
    49.
    发明公开
    MANUFACTURING METHOD OF POSITIVE ELECTRODE ACTIVE MATERIAL 审中-公开

    公开(公告)号：US20230286825A1

    公开(公告)日：2023-09-14

    申请号：US18040286

    申请日：2021-08-06

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Tetsuya KAKEHATA ,  Tetsuji ISHITANI ,  Yohei MOMMA ,  Yusuke YOSHITANI

    IPC: C01G53/00

    CPC classification number: C01G53/44 ,  C01P2006/40

    Abstract: A manufacturing method of a highly purified positive electrode active material is provided. Alternatively, a manufacturing method of a positive electrode active material whose crystal structure is not easily broken even when charging and discharging are repeated is provided. Provided is a manufacturing method of a positive electrode active material containing lithium and a transition metal. The manufacturing method includes a first step of forming a hydroxide containing the transition metal using a basic aqueous solution and an aqueous solution containing the transition metal, a second step of preparing a lithium compound, a third step of mixing the lithium compound and the hydroxide to form a mixture, and a fourth step of heating the mixture to form a composite oxide containing lithium and the transition metal. A material with a purity higher than or equal to 99.99% is prepared as the lithium compound in the second step, and the heating is performed in an oxygen-containing atmosphere with a dew point lower than or equal to −50° C. in the fourth step.

    FLIP-FLOP CIRCUIT, DRIVER CIRCUIT, DISPLAY PANEL, DISPLAY DEVICE, INPUT/OUTPUT DEVICE, AND DATA PROCESSING DEVICE
    50.
    发明公开
    FLIP-FLOP CIRCUIT, DRIVER CIRCUIT, DISPLAY PANEL, DISPLAY DEVICE, INPUT/OUTPUT DEVICE, AND DATA PROCESSING DEVICE 审中-公开

    公开(公告)号：US20230154369A1

    公开(公告)日：2023-05-18

    申请号：US18096117

    申请日：2023-01-12

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Kouhei TOYOTAKA ,  Kazunori WATANABE ,  Susumu KAWASHIMA ,  Daisuke KUBOTA ,  Tetsuji ISHITANI ,  Akio YAMASHITA

    IPC: G09G3/20

    CPC classification number: G09G3/20 ,  G06F3/041

    Abstract: A flip-flop circuit is provided. A driver circuit is provided. The flip-flop circuit includes first to fifth input terminals and first to third output terminals, the first input terminal is supplied with a first trigger signal, the second input terminal is supplied with a second trigger signal, the third input terminal is supplied with a batch selection signal, the fourth input terminal is supplied with a first pulse width modulation signal, and the fifth input terminal is supplied with a second pulse width modulation signal. The first output terminal supplies a first selection signal in response to the first pulse width modulation signal in a period from supply of the first trigger signal to supply of the second trigger signal, the first output terminal supplies the first selection signal in a period during which the batch selection signal is supplied, the second output terminal supplies a second selection signal in response to the second pulse width modulation signal in the period from the supply of the first trigger signal to the supply of the second trigger signal, and the third output terminal supplies a third trigger signal.

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