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公开(公告)号：US12069956B2
公开(公告)日：2024-08-20
申请号：US17487877
申请日：2021-09-28
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Fuchao Wang , Christopher Eric Brannon , William David French , Dok Won Lee
CPC classification number: H10N50/01 , G01R33/0052 , G01R33/096 , H01L21/30604 , H10N50/10 , H10N50/80 , H10N59/00
Abstract: Apparatus, and their methods of manufacture, including an integrated circuit device having metallization layers for interconnecting underlying electronic devices. Contacts contact conductors of an uppermost one of the metallization layers. A planarized first dielectric layer covers the contacts and the uppermost one of the metallization layers. An anisotropic magnetoresistive (AMR) stack is on the first dielectric layer between vertically aligned portions of an etch stop layer formed on the first dielectric layer and a second dielectric layer formed on the etch stop layer. Vias extend through the first dielectric layer to electrically connect the AMR stack and the contacts. A chemical-mechanical planarization (CMP) stop layer is on the AMR stack. A third dielectric layer is on the CMP stop layer. A passivation layer contacts the second dielectric layer portions, the third dielectric layer, and each opposing end of the AMR stack and the CMP stop layer.
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公开(公告)号：US20240096767A1
公开(公告)日：2024-03-21
申请号：US17945835
申请日：2022-09-15
Applicant: Texas Instruments Incorporated
Inventor： Hank Sung , Dok Won Lee , Wai Lee , Sreenivasan Koduri
IPC: H01L23/495 , H01L21/48 , H01L23/00
CPC classification number: H01L23/49568 , H01L21/4825 , H01L23/49513 , H01L23/49555 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , G01R15/202
Abstract: An electronic device includes a metal heat slug, a semiconductor die, and a package structure. The metal heat slug has a first portion, a second portion, and a third portion, the second portion is spaced apart from the first portion, and the third portion connects the first and second portions. The semiconductor die is attached to the third portion of the metal heat slug to measure a current of the third portion of the metal heat slug, and the package structure encloses the semiconductor die and the third portion of the metal heat slug and exposes sides of the first and second portions of the metal heat slug.
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公开(公告)号：US11864471B2
公开(公告)日：2024-01-02
申请号：US17514820
申请日：2021-10-29
Applicant: Texas Instruments Incorporated
Inventor： Rafael Jose Lizares Guevara , Dok Won Lee , Kashyap Mohan
CPC classification number: H10N52/80 , G01R33/0011 , G01R33/07 , H10N50/85 , H10N52/01 , H10N52/101
Abstract: A described example includes: a semiconductor die including a Hall sensor arranged in a first plane that is parallel to a device side surface of the semiconductor die; a passivated magnetic concentrator including a magnetic alloy layer formed over the device side surface of the semiconductor die, the upper surface of the magnetic alloy layer covered by a layer of polymer material; a backside surface of the semiconductor die opposite the device side surface mounted to a die side surface of a die pad on a package substrate, the semiconductor die having bond pads on the device side surface spaced from the magnetic concentrator; electrical connections coupling the bond pads of the semiconductor die to leads of the package substrate; and mold compound covering the magnetic concentrator, the semiconductor die, the electrical connections, a portion of the leads, and the die side surface of the die pad.
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公开(公告)号：US20230096573A1
公开(公告)日：2023-03-30
申请号：US17487877
申请日：2021-09-28
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Fuchao Wang , Christopher Eric Brannon , William David French , Dok Won Lee
IPC: H01L43/12 , H01L43/02 , H01L21/306 , G01R33/09
Abstract: Apparatus, and their methods of manufacture, including an integrated circuit device having metallization layers for interconnecting underlying electronic devices. Contacts contact conductors of an uppermost one of the metallization layers. A planarized first dielectric layer covers the contacts and the uppermost one of the metallization layers. An anisotropic magnetoresistive (AMR) stack is on the first dielectric layer between vertically aligned portions of an etch stop layer formed on the first dielectric layer and a second dielectric layer formed on the etch stop layer. Vias extend through the first dielectric layer to electrically connect the AMR stack and the contacts. A chemical-mechanical planarization (CMP) stop layer is on the AMR stack. A third dielectric layer is on the CMP stop layer. A passivation layer contacts the second dielectric layer portions, the third dielectric layer, and each opposing end of the AMR stack and the CMP stop layer.
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公开(公告)号：US11422167B2
公开(公告)日：2022-08-23
申请号：US16932299
申请日：2020-07-17
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Dok Won Lee , Jo Bito , Keith Ryan Green
IPC: G01R15/20 , H01L43/06 , H01L23/495 , H01L43/04 , H01L27/22
Abstract: A packaged current sensor includes a lead frame, an integrated circuit, an isolation spacer, a first magnetic concentrator, and a second magnetic concentrator. The lead frame includes a conductor. The isolation spacer is between the lead frame and the integrated circuit. The first magnetic concentrator is aligned with the conductor. The second magnetic concentrator is aligned with the conductor.
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Patent Agency Ranking
公开(公告)号：US20180202837A1
公开(公告)日：2018-07-19
申请号：US15407990
申请日：2017-01-17
Applicant: Texas Instruments Incorporated
Inventor： William David French , Dok Won Lee
IPC: G01D5/16
CPC classification number: G01D5/145
Abstract: An integrated AMR angular sensor includes a first sensor resistor and a second sensor resistor. The first sensor resistor and the second sensor resistor each has a plurality of magnetoresistive segments containing magnetoresistive material that are electrically coupled in series. The magnetoresistive segments of each sensor resistor are parallel/anti-parallel to each other. The magnetoresistive segments of the second sensor resistor are perpendicular to the magnetoresistive segments of the first sensor resistor. The first magnetoresistive segments are divided into a first group and a second group, which are disposed in a balanced distribution relative to a sensor central point of the integrated AMR angular sensor. Similarly, the second magnetoresistive segments are divided into a first group and a second group, which are disposed in a balanced distribution relative to the sensor central point.
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公开(公告)号：US20170346000A1
公开(公告)日：2017-11-30
申请号：US15605540
申请日：2017-05-25
Applicant: Texas Instruments Incorporated
Inventor： Mona Eissa , Dok Won Lee , Byron Shulver , Yousong Zhang
CPC classification number: H01L43/12 , G01R33/0052 , G01R33/04 , H01F10/265 , H01F41/046 , H01F41/20 , H01L27/22 , H01L43/02 , H01L43/10
Abstract: A method of fabricating a semiconductor device includes aligning an alignment structure of a wafer to a direction of a magnetic field created by an external electromagnet and depositing a magnetic layer (e.g., NiFe) over the wafer in the presence of the magnetic field and while applying the magnetic field and maintaining a temperature of the wafer below 150° C. An insulation layer (e.g., AlN) is deposited on the first magnetic layer. The alignment structure of the wafer is again aligned to the direction of the magnetic field and a second magnetic layer is deposited on the insulation layer, in the presence of the magnetic field and while maintaining the temperature of the wafer below 150° C.
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公开(公告)号：US20170316875A1
公开(公告)日：2017-11-02
申请号：US15399937
申请日：2017-01-06
Applicant: Texas Instruments Incorporated
Inventor： Dok Won Lee , Sudtida Lavangkul , Erika Lynn Mazotti , William David French
IPC: H01F27/34 , H01L43/02 , H01L27/22 , H01L23/522 , G01R33/00 , H01F27/28 , H01F27/24 , G01R33/04 , H01L43/12 , H01L23/528
CPC classification number: H01F27/346 , G01R33/0029 , G01R33/04 , H01F27/24 , H01F27/28 , H01L23/5226 , H01L23/528 , H01L27/22 , H01L43/02 , H01L43/12
Abstract: An integrated fluxgate device, which includes a magnetic core, an excitation coil, and a sense coil. The magnetic core has a longitudinal edge and a terminal edge. The excitation coil coils around the longitudinal edge of the magnetic core, and the excitation coil has a first number of excitation coil members within a proximity of the terminal edge. The sense coil coils around the longitudinal edge of the magnetic core, and the sense coil has a second number of sense coil members within the proximity of the terminal edge. For reducing fluxgate noise, the second number of sense coil members may be less than the first number of excitation coil members within the proximity of the terminal edge.
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公开(公告)号：US09606193B2
公开(公告)日：2017-03-28
申请号：US15171615
申请日：2016-06-02
Applicant: Texas Instruments Incorporated
Inventor： Anuraag Mohan , Dok Won Lee , William French , Erika L. Mazotti
CPC classification number: G01R33/04 , G01R33/0052 , G01R33/09 , H01L29/26 , H01L43/00 , H01L43/02 , H01L43/10 , H01L43/12
Abstract: A method of fabricating fluxgate devices to measure the magnetic field in two orthogonal, in plane directions, by using a composite-anisotropic magnetic core structure.
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公开(公告)号：US09577185B1
公开(公告)日：2017-02-21
申请号：US15141003
申请日：2016-04-28
Applicant: Texas Instruments Incorporated
Inventor： Dok Won Lee , Sudtida Lavangkul , Erika Lynn Mazotti , William David French
IPC: H01L27/02 , H01L43/12 , H01L27/22 , H01L43/02 , H01L23/528 , H01L23/522 , G01R33/04
CPC classification number: H01F27/346 , G01R33/0029 , G01R33/04 , H01F27/24 , H01F27/28 , H01L23/5226 , H01L23/528 , H01L27/22 , H01L43/02 , H01L43/12
Abstract: An integrated fluxgate device, which includes a magnetic core, an excitation coil, and a sense coil. The magnetic core has a longitudinal edge and a terminal edge. The excitation coil coils around the longitudinal edge of the magnetic core, and the excitation coil has a first number of excitation coil members within a proximity of the terminal edge. The sense coil coils around the longitudinal edge of the magnetic core, and the sense coil has a second number of sense coil members within the proximity of the terminal edge. For reducing fluxgate noise, the second number of sense coil members may be less than the first number of excitation coil members within the proximity of the terminal edge.
Abstract translation: 集成磁通门装置，其包括磁芯，励磁线圈和感测线圈。 磁芯具有纵向边缘和末端边缘。 励磁线圈围绕磁芯的纵向边缘缠绕，并且励磁线圈在端子边缘附近具有第一数量的励磁线圈构件。 感测线圈围绕磁芯的纵向边缘缠绕，并且感测线圈在端子边缘附近具有第二数量的感测线圈构件。 为了减小磁通门噪声，第二数量的感测线圈构件可以小于在端子边缘附近的第一数量的励磁线圈构件。
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