公开(公告)号：US20140151334A1

公开(公告)日：2014-06-05

申请号：US14176197

申请日：2014-02-10

Applicant: Tokyo Electron Limited

Inventor： Takashi MATSUMOTO ,  Osayuki Akiyama

IPC: C01B31/08

CPC classification number: C01B32/168 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  C01B32/176 ,  H01J9/025

Abstract: A method for processing carbon nanotubes includes positioning in a treatment chamber of a carbon nanotube processing apparatus a substrate having multiple carbon nanotubes bundled together and oriented substantially perpendicular to a surface of the substrate, and introducing a microwave into the treatment chamber from a planar antenna having multiple microwave radiation holes such that plasma of an etching gas is generated and that the plasma etches the carbon nanotubes starting from one end of the carbon nanotubes bundled together.

Abstract translation: 一种碳纳米管的处理方法，其特征在于，在碳纳米管处理装置的处理室中，将具有多个碳纳米管的基板在基板的表面垂直配置的基板上进行定位，并将微波从具有 产生多个微波辐射孔，使得产生蚀刻气体的等离子体，并且等离子体从碳纳米管的一端开始捆扎在一起，从而蚀刻碳纳米管。