公开(公告)号：US20250149329A1

公开(公告)日：2025-05-08

申请号：US18838595

申请日：2023-02-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryota IFUKU ,  Takashi MATSUMOTO ,  Hiroki YAMADA

IPC: H01L21/02 ,  C23C16/455

Abstract: A substrate processing method includes: a preparation process of preparing a substrate having an underlying layer; a first process of forming a first graphene film, which has a first stress, on the underlying layer; a second process of forming a second graphene film, which has a second stress different from the first stress, on the first graphene film; and a third process of forming a third graphene film, which has a third stress different from the second stress, on the second graphene film.

公开(公告)号：US20240120183A1

公开(公告)日：2024-04-11

申请号：US18263920

申请日：2022-01-24

Applicant: Tokyo Electron Limited

Inventor： Makoto WADA ,  Ryota IFUKU ,  Takashi MATSUMOTO ,  Hiroki YAMADA

IPC: H01J37/32 ,  C23C16/26 ,  C23C16/455 ,  C23C16/511 ,  C23C16/52 ,  H01L21/02

CPC classification number: H01J37/32816 ,  C23C16/26 ,  C23C16/45557 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32743 ,  H01L21/02115 ,  H01L21/02274 ,  H01J37/32192 ,  H01J2237/182 ,  H01J2237/332

Abstract: A substrate processing method of processing a substrate includes: a carry-in process of carrying the substrate into a processing container; a first process of forming a first carbon film on the substrate with plasma of a first mixture gas containing a carbon-containing gas in a state in which interior of the processing container is maintained at a first pressure; and a second process of changing a pressure in the processing container to a second pressure higher than the first pressure.

公开(公告)号：US20230167547A1

公开(公告)日：2023-06-01

申请号：US17997410

申请日：2021-04-16

Applicant: Tokyo Electron Limited

Inventor： Ryota IFUKU ,  Takashi MATSUMOTO ,  Masahito SUGIURA ,  Makoto WADA

IPC: C23C16/44 ,  C23C16/26 ,  C23C16/50 ,  H01J37/32

CPC classification number: C23C16/4404 ,  C23C16/26 ,  C23C16/50 ,  H01J37/32449 ,  H01J37/32495 ,  H01J2237/3323

Abstract: A method of pre-coating a carbon film by plasma in a processing container, includes: pre-coating an inner wall of the processing container with a first carbon film by plasma of a first carbon-containing gas under a first pressure; and processing the first carbon film with the plasma under a second pressure.

公开(公告)号：US20220316065A1

公开(公告)日：2022-10-06

申请号：US17636808

申请日：2020-08-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Makoto WADA ,  Takashi MATSUMOTO ,  Masahito SUGIURA ,  Ryota IFUKU ,  Hirokazu UEDA

IPC: C23C16/511 ,  H01J37/32 ,  C23C16/27 ,  C23C16/455

Abstract: There is provided a processing apparatus for forming a film with a plasma. The processing apparatus comprises: a processing container, having a ceramic sprayed coating on an inner wall on which an antenna that radiates microwaves is arranged, configured to accommodate a substrate; a mounting table configured to mount the substrate in the processing container; and a controller configured to perform a precoating process of coating a surface of the ceramic sprayed coating with a first carbon film with a plasma of a first carbon-containing gas at a first pressure and a film forming process of forming a second carbon film on the substrate with a plasma of a second carbon-containing gas at a second pressure.

公开(公告)号：US20220223407A1

公开(公告)日：2022-07-14

申请号：US17593220

申请日：2020-02-26

Applicant: Tokyo Electron Limited

Inventor： Ryota IFUKU ,  Takashi MATSUMOTO ,  Masahito SUGIURA

IPC: H01L21/02 ,  H01L21/285 ,  H01J37/32 ,  C23C16/511 ,  C23C16/26 ,  C23C16/02

Abstract: A method of forming a graphene structure, includes: providing a substrate; performing a preprocessing by supplying a first processing gas including a carbon-containing gas to the substrate while heating the substrate, without using plasma; and after the preprocessing, forming the graphene structure on a surface of the substrate through a plasma CVD using plasma of a second processing gas including a carbon-containing gas.

公开(公告)号：US20220165568A1

公开(公告)日：2022-05-26

申请号：US17438132

申请日：2020-02-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobutake KABUKI ,  Masahito SUGIURA ,  Takashi MATSUMOTO ,  Kenjiro KOIZUMI ,  Ryota IFUKU

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/505 ,  H01J37/32

Abstract: A method for forming a hexagonal boron nitride film comprises: providing a substrate; and generating plasma of a boron-containing gas and a nitrogen-containing gas in a plasma generation region located at a position apart from the substrate to form the hexagonal boron nitride film on the surface of the substrate by plasma CVD using plasma diffused from the plasma generation region.

公开(公告)号：US20220155242A1

公开(公告)日：2022-05-19

申请号：US17439160

申请日：2020-02-26

Applicant: Tokyo Electron Limited

Inventor： Ryota IFUKU ,  Takashi MATSUMOTO ,  Akira FUJIO ,  Kousaku SAITO

IPC: G01N21/956 ,  C01B32/186 ,  C01B32/18

Abstract: A method of detecting an abnormal growth of graphene includes: preparing an inspection target having a graphene film formed on a substrate by CVD; receiving light from the graphene film by using a dark field optical system; and inspecting the received light, thereby detecting the abnormal growth of the graphene.

公开(公告)号：US20180226252A1

公开(公告)日：2018-08-09

申请号：US15888445

申请日：2018-02-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryota IFUKU ,  Hisashi HIGUCHI ,  Takashi MATSUMOTO

IPC: H01L21/04 ,  H01L21/67 ,  H01L29/66

CPC classification number: H01L21/042 ,  H01L21/02074 ,  H01L21/02488 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/67069 ,  H01L29/1606 ,  H01L29/66037

Abstract: There is provided a method for planarizing irregularities in a surface of a grapheme layer formed on a substrate, including: planarizing the grapheme layer by removing graphene constituting a convex portion in the surface of the grapheme layer by anisotropically etching the grapheme layer using a plasma etching in an in-plane direction from an edge portion of the graphene.

公开(公告)号：US20180187298A1

公开(公告)日：2018-07-05

申请号：US15910301

申请日：2018-03-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi MATSUMOTO

IPC: C23C14/22 ,  C23C14/06

Abstract: There is provided a method for manufacturing graphene. The method includes an adsorption step of causing six-membered ring structures of carbon atoms to be adsorbed to a surface of a substrate; and an irradiation step of irradiating the surface of the substrate with a beam of a molecule containing carbon atoms.

公开(公告)号：US20170268103A1

公开(公告)日：2017-09-21

申请号：US15613739

申请日：2017-06-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke NISHIDE ,  Takashi MATSUMOTO ,  Munehito KAGAYA ,  Ryota IFUKU

IPC: C23C16/26 ,  C23C16/18 ,  C23C16/46 ,  C23C16/455

CPC classification number: C23C16/26 ,  C01B32/186 ,  C23C16/0218 ,  C23C16/0281 ,  C23C16/18 ,  C23C16/45523 ,  C23C16/46 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/67103 ,  H01L21/68742 ,  H01L21/76864 ,  H01L21/76876 ,  H01L23/53276 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming a base film of a graphene includes: forming a metal film as a base film of a graphene on a substrate by chemical vapor deposition (CVD) of an organic metal compound using a hydrogen gas and an ammonia gas; heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and heating the substrate to a temperature at which crystal grains of metal are grown in the metal film, wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas.