公开(公告)号：US09105720B2

公开(公告)日：2015-08-11

申请号：US14023481

申请日：2013-09-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Hsien Lin ,  An-Chi Liu

IPC: H01L29/78 ,  H01L21/28 ,  H01L29/49 ,  H01L21/8238 ,  H01L29/51 ,  H01L29/66

CPC classification number: H01L29/7833 ,  H01L21/28088 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6659

Abstract: A method for manufacturing a semiconductor device having metal gate includes following steps. A substrate having at least a first semiconductor device formed thereon is provided. The first semiconductor device includes a first gate trench formed therein. Next, an n-typed work function metal layer is formed in the first gate trench. After forming the n-typed work function metal layer, a nitridation process is performed to form a first protecting layer on the n-typed work function metal layer. After forming the first protecting layer, an oxidation process is performed to the first protecting layer to form a second protecting layer on the n-typed work function metal layer. Then, a gap filling metal layer is formed to fill up the first gate trench.

Abstract translation: 一种制造具有金属栅极的半导体器件的方法包括以下步骤。 提供了至少形成有第一半导体器件的衬底。 第一半导体器件包括形成在其中的第一栅极沟槽。 接下来，在第一栅极沟槽中形成n型功函数金属层。 在形成n型功函数金属层之后，进行氮化处理以在n型功函数金属层上形成第一保护层。 在形成第一保护层之后，对第一保护层进行氧化处理，以在n型功函数金属层上形成第二保护层。 然后，形成间隙填充金属层以填充第一栅极沟槽。

公开(公告)号：US20150069533A1

公开(公告)日：2015-03-12

申请号：US14023481

申请日：2013-09-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Hsien Lin ,  An-Chi Liu

IPC: H01L29/423 ,  H01L29/78 ,  H01L21/28

CPC classification number: H01L29/7833 ,  H01L21/28088 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6659

Abstract: A method for manufacturing a semiconductor device having metal gate includes following steps. A substrate having at least a first semiconductor device formed thereon is provided. The first semiconductor device includes a first gate trench formed therein. Next, an n-typed work function metal layer is formed in the first gate trench. After forming the n-typed work function metal layer, a nitridation process is performed to form a first protecting layer on the n-typed work function metal layer. After forming the first protecting layer, an oxidation process is performed to the first protecting layer to form a second protecting layer on the n-typed work function metal layer. Then, a gap filling metal layer is formed to fill up the first gate trench.

Abstract translation: 一种制造具有金属栅极的半导体器件的方法包括以下步骤。 提供了至少形成有第一半导体器件的衬底。 第一半导体器件包括形成在其中的第一栅极沟槽。 接下来，在第一栅极沟槽中形成n型功函数金属层。 在形成n型功函数金属层之后，进行氮化处理以在n型功函数金属层上形成第一保护层。 在形成第一保护层之后，对第一保护层进行氧化处理，以在n型功函数金属层上形成第二保护层。 然后，形成间隙填充金属层以填充第一栅极沟槽。