公开(公告)号：US20060166463A1

公开(公告)日：2006-07-27

申请号：US11336267

申请日：2006-01-20

Applicant: Thor Bakke ,  Martin Friedrichs ,  Benjamin Volker ,  Thomas Haase

Inventor： Thor Bakke ,  Martin Friedrichs ,  Benjamin Volker ,  Thomas Haase

IPC: H01L21/30

CPC classification number: B81C1/00142 ,  B81B2201/042 ,  B81C1/00611 ,  B81C2201/0121 ,  B81C2201/019 ,  G02B26/0833

Abstract: A method of producing a device with a movable portion spaced apart from a support wafer comprises a step of providing the support wafer having a structured surface and a further step of providing a device wafer with a backing layer and a device layer disposed thereon. Further, the method comprises the step of generating a first planarization layer from a first starting material on the support wafer with a first method to fill in the structures of the structured surface of the support wafer, whereby a surface with a first degree of planarization is obtained. Further, the method comprises a step of generating a second planarization layer from a second starting material on the planarized surface of the support wafer with a second method to obtain a surface with a second degree of planarization, which is higher than the first degree of planarization, wherein the first and second planarization layers can be removed together. Additionally, the support wafer is connected to the device wafer such that the device layer and the planarized surface of the support wafer are connected. Then, removing the backing layer of the device wafer is performed, followed by structuring the resulting structure and removing the first and second planarization layers via a common method to generate the moveable portion of the device.

Abstract translation: 制造具有与支撑晶片间隔开的可移动部分的装置的方法包括提供具有结构化表面的支撑晶片的步骤，以及提供具有背衬层和设置在其上的器件层的器件晶片的另外步骤。 此外，该方法包括以第一种填充支撑晶片的结构化表面的结构的方式从支撑晶片上的第一起始材料产生第一平坦化层的步骤，由此具有第一程度的平坦化的表面是 获得。 此外，该方法包括以第二种方法从支撑晶片的平坦化表面上的第二起始材料产生第二平坦化层的步骤，以获得具有比第一平坦化程度高的第二平坦度的表面 ，其中第一和第二平坦化层可以一起去除。 此外，支撑晶片连接到器件晶片，使得器件层和支撑晶片的平坦化表面被连接。 然后，去除器件晶片的背衬层，然后构造所得到的结构，并且通过常用的方法去除第一和第二平坦化层以产生器件的可移动部分。

公开(公告)号：US20050183938A1

公开(公告)日：2005-08-25

申请号：US10994704

申请日：2004-11-20

Applicant: Chia-Shing Chou

Inventor： Chia-Shing Chou

IPC: B44C1/22 ,  B81B3/00 ,  B81C1/00 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01H1/00 ,  H01H51/22 ,  H01H57/00 ,  H01H59/00 ,  H01L21/00 ,  H01L31/00 ,  H01P1/10

CPC classification number: B81C1/00611 ,  B81C2201/0121 ,  H01H59/0009 ,  H01H2059/0072 ,  Y10T29/49105

Abstract: A head electrode region for an electromechanical device is presented, comprising a first insulating layer having electrode region edges; and a head electrode, where the head electrode comprises a locking portion, with the locking portion surrounding the electrode region edges of the first insulating layer such that the head electrode is held fixed relative to the first insulating layer. The head electrode region can further comprise a top region residing above the first insulating layer and a contact region residing below the first insulator, the head electrode region further comprising a second insulating layer formed to cover at least a portion of the top region of the head electrode.

Abstract translation: 本发明提供了一种机电装置的头电极区域，包括具有电极区域边缘的第一绝缘层; 以及头电极，其中所述头电极包括锁定部分，所述锁定部分围绕所述第一绝缘层的电极区域边缘，使得所述头电极相对于所述第一绝缘层保持固定。 磁头电极区域可以进一步包括位于第一绝缘层上方的顶部区域和位于第一绝缘体下方的接触区域，所述磁头电极区域还包括形成为覆盖磁头的顶部区域的至少一部分的第二绝缘层 电极。

公开(公告)号：US20030129843A1

公开(公告)日：2003-07-10

申请号：US10264704

申请日：2002-10-04

Inventor： Yongming Cai ,  Linda P.B. Katehi

IPC: H01L021/311

CPC classification number: H01L21/0272 ,  B81C1/00611 ,  B81C2201/0121 ,  H01L21/32115

Abstract: A method of planarizing a circuit surface is disclosed. The basic idea is to use the photoresist mask for etching as the mask for lift-off, i.e. after the substrate patterned with photoresist and dry etched, metal is directly deposited onto it and liftoff afterwards. Thus, the deposited metal is self aligned and filled into the etched pattern with a planar surface. It is important that the metal thickness should be the same as the etching depth. The lithography needs a special recipe and photoresist requires a special pre-treatment so that the metal can form a clean edge without any residual metal along the edge. A prototype using this invention, a MEMS switch, is introduced.

Abstract translation: 公开了一种平面化电路表面的方法。 基本思想是使用光致抗蚀剂掩模作为剥离掩模，即在用光致抗蚀剂图案化并经干蚀刻蚀刻的基板之后，金属直接沉积在其上并随后提升。 因此，沉积的金属是自对准的并且被填充到具有平坦表面的蚀刻图案中。 重要的是金属厚度应与蚀刻深度相同。 光刻需要特殊的配方，光刻胶需要进行特殊的预处理，以便金属可以形成一个干净的边缘，而不会沿边缘有任何残留的金属。 引入了使用本发明的MEMS开关的原型。