公开(公告)号：US20130058461A1

公开(公告)日：2013-03-07

申请号：US13697497

申请日：2011-05-20

Applicant: Kohei Okamoto ,  Atsushi Komoto ,  Wataru Kubo ,  Hirokatsu Miyata ,  Takashi Noma

Inventor： Kohei Okamoto ,  Atsushi Komoto ,  Wataru Kubo ,  Hirokatsu Miyata ,  Takashi Noma

IPC: G21K1/06

CPC classification number: G21K1/06 ,  G21K2201/067 ,  H01J11/44 ,  H01J35/065

Abstract: An X-ray waveguide showing a small propagation loss and having a waveguide mode with its phase controlled is provided. The X-ray waveguide including: a core for guiding an X-ray in a wavelength band that a real part of the refractive index of a material is 1 or less; and a cladding for confining the X-ray in the core, in which: the X-ray is confined in the core by total reflection at a interface between the core and the cladding; in the core multiple materials having different real parts of the refractive index are periodically arranged; and a waveguide mode of the X-ray waveguide is such that the number of antinodes or nodes of an electric field intensity distribution or a magnetic field intensity distribution of the X-ray coincides with the number of periods of the periodic structure in a direction perpendicular to a waveguiding direction of the X-ray in the core.

Abstract translation: 提供了具有小的传播损耗并且具有其相位控制的波导模式的X射线波导。 X射线波导包括：用于引导材料的折射率的实部的1个以下的波长带的X射线的芯; 以及用于将X射线限制在芯中的包层，其中：通过在芯和包层之间的界面处的全反射将X射线限制在芯中; 在具有折射率不同的实部的核心多个材料中定期布置; 并且X射线波导的波导模式使得X射线的电场强度分布或磁场强度分布的波腹或节点的数量与垂直方向上的周期性结构的周期数相一致 到核心中的X射线的波导方向。

公开(公告)号：US20130027681A1

公开(公告)日：2013-01-31

申请号：US13626330

申请日：2012-09-25

Applicant: Carl Zeiss SMT GmbH

Inventor： Hans-Juergen Mann ,  Wolfgang Singer

IPC: G03B27/54 ,  G21K5/04 ,  G02B5/08

CPC classification number: G03F7/70175 ,  G03F7/7005 ,  G03F7/70166 ,  G21K1/067 ,  G21K2201/067

Abstract: A collector transfers an emission of an EUV radiation source to a main intensity spot. The collector has at least one collector subunit including at least one grazing incidence mirror. The grazing incidence mirror transfers EUV radiation from the radiation source to an intensity spot. At least one ellipsoid mirror of the collector has an ellipsoidal mirror surface. The ellipsoidal mirror surface is impinged by an angle of incidence above a critical grazing incidence angle. No more than one collector subunit is arranged in the beam path of an EUV radiation source between a position of the EUV radiation source and the intensity spot. At least some of the EUV rays are only reflected in a grazing manner.

Abstract translation: 收集器将EUV辐射源的发射转移到主强度点。 收集器具有至少一个收集器子单元，其包括至少一个掠入射镜。 掠入射镜将EUV辐射从辐射源转移到强度点。 收集器的至少一个椭圆面镜具有椭圆面镜面。 椭圆面镜面在入射角高于临界掠入射角时入射。 在EUV辐射源的位置与强度点之间的EUV辐射源的光束路径中不超过一个收集器子单元。 至少一些EUV射线只能以放牧的方式反映出来。

公开(公告)号：US08338809B2

公开(公告)日：2012-12-25

申请号：US13164745

申请日：2011-06-20

Applicant: Yao-Hung Yang ,  Tuan Anh Nguyen ,  Sanjeev Baluja ,  Andrzej Kaszuba ,  Juan Carlos Rocha ,  Thomas Nowak ,  Dustin W. Ho

Inventor： Yao-Hung Yang ,  Tuan Anh Nguyen ,  Sanjeev Baluja ,  Andrzej Kaszuba ,  Juan Carlos Rocha ,  Thomas Nowak ,  Dustin W. Ho

IPC: G01N21/33 ,  B01J19/08 ,  B29C35/08

CPC classification number: G21K1/062 ,  B82Y10/00 ,  G21K2201/064 ,  G21K2201/065 ,  G21K2201/067

Abstract: A reflector for an ultraviolet lamp can be used in a substrate processing apparatus. The reflector comprises a centrally positioned longitudinal strip and first and second side reflectors to form a parabolic-type surface. The longitudinal strip and first and second side reflectors have curved reflective surfaces with dichroic coatings and the longitudinal strip comprises a plurality of through holes to direct a coolant gas toward the ultraviolet lamp. A chamber that uses an ultraviolet lamp module with the reflector, and a method of ultraviolet treatment are also described.

Abstract translation: 用于紫外灯的反射器可用于基板处理装置。 反射器包括中心定位的纵向条和第一和第二侧反射器以形成抛物线型表面。 纵向条和第一和第二侧反射器具有带有二向色涂层的弯曲反射表面，并且纵向条带包括多个通孔以将冷却剂气体引向紫外线灯。 还描述了使用具有反射器的紫外线灯模块的室以及紫外线处理方法。

公开(公告)号：US20120300184A1

公开(公告)日：2012-11-29

申请号：US13475173

申请日：2012-05-18

Applicant: Dirk Heinrich EHM ,  Franz-Josef STICKEL ,  Juergen Mueller

Inventor： Dirk Heinrich EHM ,  Franz-Josef STICKEL ,  Juergen Mueller

IPC: G03B27/70 ,  B05D5/06 ,  C23C14/48 ,  G02B7/185

CPC classification number: C23C14/48 ,  G02B17/0657 ,  G02B26/0825 ,  G03B7/20 ,  G03F7/70266 ,  G03F7/70316 ,  G03F7/7095 ,  G21K1/062 ,  G21K2201/067

Abstract: A mirror (1) for a microlithography projection exposure apparatus including a substrate (3) and a reflective coating (5). A functional coating (11) between the substrate (3) and the reflective coating (5) has a local form variation (19) for correcting the surface form of the mirror (1), wherein the local form variation (19) is brought about by a local variation in the chemical composition of the functional coating (11) and wherein a thickness of the reflective coating (5) is not changed by the local variation in the chemical composition of the functional coating (11). The local variation in the chemical composition of the functional coating (11) can be brought about by bombardment with particles (15), for example with hydrogen ions.

Abstract translation: 一种用于包括基板（3）和反射涂层（5）的微光刻投影曝光装置的反射镜（1）。 在基板（3）和反射涂层（5）之间的功能性涂层（11）具有用于校正反射镜（1）的表面形状的局部形状变化（19），其中局部形状变化（19）带来 通过功能性涂层（11）的化学组成的局部变化，并且其中反射涂层（5）的厚度不会由于功能涂层（11）的化学组成的局部变化而改变。 功能性涂层（11）的化学组成的局部变化可以通过用颗粒（15）例如用氢离子轰击来实现。

公开(公告)号：US20120256105A1

公开(公告)日：2012-10-11

申请号：US13494778

申请日：2012-06-12

Applicant: Masato MORIYA ,  Osamu Wakabayashi ,  Georg Soumagne

Inventor： Masato MORIYA ,  Osamu Wakabayashi ,  Georg Soumagne

IPC: G21K5/00

CPC classification number: H05G2/003 ,  B82Y10/00 ,  G03F7/70575 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/064 ,  G21K2201/067

Abstract: The exposure device is able to supply only EUV radiation to a mask, while eliminating radiation other than the EUV radiation. A multi layer made from a plurality of Mo/Si pair layers is provided upon the front surface of a mirror, and blazed grooves are formed in this multi layer. Radiation which is incident from a light source device is incident upon this mirror, and is reflected or diffracted. Since the reflected EUV radiation (including diffracted EUV radiation) and the radiation of other wavelengths are reflected or diffracted at different angles, accordingly their directions of progression are different. By eliminating the radiation of other wavelengths with an aperture and/or a dumper, it is possible to irradiate a mask only with EUV radiation of high purity.

Abstract translation: 曝光装置只能将EUV辐射提供给掩模，同时消除EUV辐射以外的辐射。 在反射镜的前表面上设置由多个Mo / Si对层制成的多层，并且在该多层中形成闪耀的凹槽。 从光源装置入射的辐射入射在该反射镜上并被反射或衍射。 由于反射的EUV辐射（包括衍射的EUV辐射）和其他波长的辐射在不同的角度被反射或衍射，因此它们的进展方向是不同的。 通过用孔和/或自卸车消除其它波长的辐射，可以仅用高纯度的EUV辐射照射掩模。

公开(公告)号：US20120229785A1

公开(公告)日：2012-09-13

申请号：US13510505

申请日：2010-10-11

Applicant: Vladimir Mihailovitch Krivtsun ,  Andrei Mikhailovich Yakunin ,  Viacheslav Medvedev

Inventor： Vladimir Mihailovitch Krivtsun ,  Andrei Mikhailovich Yakunin ,  Viacheslav Medvedev

IPC: G03B27/70 ,  G03B27/32 ,  F21V9/06

CPC classification number: G03F7/70958 ,  B82Y10/00 ,  G02B5/0891 ,  G03F7/70575 ,  G21K1/062 ,  G21K2201/067

Abstract: A multilayer mirror is configured to reflect extreme ultraviolet (EUV) radiation while absorbing a second radiation having a wavelength substantially-longer than that of the EUV radiation. The mirror includes a plurality of layer pairs stacked on a substrate. Each layer pair comprises a first layer that includes a first material, and a second layer that includes a second material. The first layer is modified to reduce its contribution to reflection of the second radiation, compared with a simple layer of the same metal having the same thickness. Modifications can include doping with a third material in or around the metal layer to reduce its electric conductivity by chemical bonding or electron trapping, and/or splitting the metal layer into sub-layers with insulating layers. The number of layers in the stack is larger than known multilayer mirrors and may be tuned to achieve a minimum in IR reflection.

Abstract translation: 多层反射镜被配置为反射极紫外（EUV）辐射，同时吸收具有比EUV辐射的波长更大的波长的第二辐射。 反射镜包括堆叠在基板上的多个层对。 每层对包括包括第一材料的第一层和包括第二材料的第二层。 与具有相同厚度的相同金属的简单层相比，修改第一层以减少其对第二辐射的反射的贡献。 修改可以包括在金属层中或其周围掺杂第三材料，以通过化学键合或电子俘获来降低其导电性，和/或将金属层分成具有绝缘层的子层。 堆叠中的层数大于已知的多层反射镜，并且可以调谐以在IR反射中达到最小。

公开(公告)号：US20120205785A1

公开(公告)日：2012-08-16

申请号：US13371124

申请日：2012-02-10

Applicant: Nathalie C.D. Bouet ,  Raymond P. Conley ,  Ralu Divan ,  Albert Macrander

Inventor： Nathalie C.D. Bouet ,  Raymond P. Conley ,  Ralu Divan ,  Albert Macrander

IPC: H01L23/58 ,  H01L21/3065

CPC classification number: H01L21/3065 ,  B82Y10/00 ,  C23F4/00 ,  G21K1/062 ,  G21K2201/067 ,  H01L21/32137

Abstract: A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF3, Cl2, and O2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.

Abstract translation: 公开了通过使用具有氟基化学的RIE技术通过蚀刻单层和多层进行切片的方法。 在一个实施方案中，该方法单独使用反应离子蚀刻（RIE）或与使用氟基化学的电感耦合等离子体（ICP）组合使用，并且使用足够的功率提供高离子能量以增加蚀刻速率并获得更深的各向异性蚀刻 。 在第二实施例中，提供了使用RIE与ICP结合使用氟基和氯基化学物质并使用RF功率和ICP功率的WSI2 / Si多层的切片的方法。 根据第二实施例，通过三种气体的比例实现高水平的垂直各向异性; 即CHF3，Cl2和O2与RF和ICP。 另外，结合第二实施例，可以在有助于各向异性轮廓生成的多层的表面上形成钝化层。

公开(公告)号：US08235769B2

公开(公告)日：2012-08-07

申请号：US11989960

申请日：2006-08-03

Applicant: Yuzo Mori

Inventor： Yuzo Mori

IPC: B24B49/00

CPC classification number: G21K1/06 ,  B23H5/04 ,  B23H7/38 ,  B23K15/00 ,  B24B31/10 ,  B24C1/08 ,  G21K2201/064 ,  G21K2201/067 ,  Y10S451/908

Abstract: To provide an electron beam assisted EEM method that can realize ultraprecision machining of workpieces, including glass ceramic materials, in which at least two component materials different from each other in machining speed in a machining process are present in a refined mixed state and the surface state is not even, to a surface roughness of 0.2 to 0.05 nm RMS. The EEM method comprises a working process in which a workpiece and chemically reactive fine particles are allowed to flow along the working face to remove atoms on the working face chemically bonded to the fine particles together with the fine particles through chemical interaction between the fine particles and the working face interface. The workpiece comprises at least two component materials present in a refined mixed state and different from each other in machining speed in the machining process. After the exposure of the workpiece in its working face to an electron beam to conduct modification so that the machining speed of the surface layer part in the working face is substantially even, ultraprecision smoothening is carried out by working process.

Abstract translation: 提供一种能够实现包括玻璃陶瓷材料在内的工件的超精密加工的电子束辅助EEM方法，其中在加工过程中以加工速度彼此不同的至少两种组分材料以精细混合状态存在，并且表面状态 不均匀，表面粗糙度为0.2〜0.05nm RMS。 EEM方法包括工作过程，其中允许工件和化学反应性微粒沿着工作面流动，以通过细颗粒与细颗粒之间的化学相互作用将微粒与化学键合的工作面上的原子除去 工作面界面。 工件包括以精加工的混合状态存在并且在加工过程中以加工速度彼此不同的至少两种组分材料。 在将工件的工作面暴露于电子束进行变形，使得工作面中的表层部的加工速度基本均匀的情况下，通过加工工序进行超精密平滑化。

公开(公告)号：US20120182634A1

公开(公告)日：2012-07-19

申请号：US13392453

申请日：2010-08-27

Applicant: Marcos Bavdaz

Inventor： Marcos Bavdaz

IPC: G02B7/182 ,  B32B38/00 ,  B32B37/14

CPC classification number: G21K1/06 ,  G21K2201/064 ,  G21K2201/067 ,  Y10T156/1002

Abstract: The invention relates to a method for assembling a mirror plate stack 30 comprising a plurality of mirror plates 10 and a base plate 13 onto which the plurality of mirror plates are stacked. Additionally, the invention relates to a method for assembling two or more mirror plate stacks into a rigid unit. In order to improve the assembly accuracy of the mirror plates, it is proposed that the method comprises the steps of providing a base plate 13 with a first mirror plate mounted thereto; providing a handling tool with a second mirror plate; providing a spacer to a first surface of the second mirror plate; positioning the handling tool comprising the second mirror plate with the spacer to align the second mirror plate with the first mirror plate, wherein the second mirror plate is aligned relative to the first mirror plate based on a measured position and shape of the first mirror plate to compensate a deviation of the measured position and shape of the first mirror plate from a pre-defined position and shape of the first mirror plate; attaching the second mirror plate to the first mirror plate by bonding the spacer to the first mirror plate, wherein the spacer determines a pre-defined distance between the first and the second mirror plates; exposing a second surface of the second mirror plate by removing the handling tool from the attached second mirror plate; and measuring the position and shape of the attached second mirror plate after the second surface has been exposed.

Abstract translation: 本发明涉及一种组装反光板叠层30的方法，所述镜板组30包括多个镜板10和底板13，所述多个镜板堆叠在该底板上。 另外，本发明涉及一种用于将两个或多个镜板组装配成刚性单元的方法。 为了提高镜板的装配精度，提出了该方法包括以下步骤：为基板13提供安装在其上的第一镜板; 提供具有第二镜板的处理工具; 在所述第二镜板的第一表面上设置间隔件; 将包括第二镜板的处理工具定位成具有间隔件以使第二镜板与第一镜板对准，其中第二镜板相对于第一镜板基于第一镜板的测量位置和形状对准 将第一镜板的测量位置和形状与第一镜板的预定位置和形状的偏差补偿; 通过将间隔件接合到第一镜板将第二镜板附接到第一镜板，其中间隔件确定第一和第二镜板之间的预定义距离; 通过从附接的第二镜板上移除操作工具来暴露第二镜板的第二表面; 并且在第二表面已经暴露之后测量附接的第二镜板的位置和形状。

公开(公告)号：US20120148029A1

公开(公告)日：2012-06-14

申请号：US13308013

申请日：2011-11-30

Applicant: Yasuhisa KANEKO

Inventor： Yasuhisa KANEKO

IPC: G21K1/10 ,  B21D39/03

CPC classification number: G21K1/06 ,  G21K2201/067 ,  Y10T29/49826

Abstract: First and second grids are arranged between an X-ray source and an X-ray image detector. The first and second grids have the similar configuration except for width, pitch, and thickness of X-ray absorbing sections. The first grid is composed of subdivision grids arranged with substantially no space between each other on a flat surface of a substrate made of glass, for example. Each subdivision grid has a shape of a regular hexagon. Each subdivision grid has the X-ray absorbing sections and X-ray transmitting sections extending in Y direction and arranged alternately in X direction. The X-ray absorbing sections of the adjacent subdivision grids are aligned substantially parallel to each other. The X-ray transmitting sections of the adjacent subdivision grids are aligned substantially parallel to each other. No side of the subdivision grid is parallel to an extending direction of the X-ray absorbing sections and the X-ray transmitting sections.

Abstract translation: 第一和第二栅极设置在X射线源和X射线图像检测器之间。 除了X射线吸收部的宽度，间距和厚度之外，第一和第二格栅具有相似的构造。 例如，第一格栅由在玻璃基板的平坦表面上彼此基本没有空间布置的细分格栅组成。 每个细分网格具有正六边形的形状。 每个细分格栅具有沿Y方向延伸的X射线吸收部分和X射线透射部分，并且沿X方向交替布置。 相邻细分格栅的X射线吸收部分基本上彼此平行排列。 相邻细分格栅的X射线透射部分基本上彼此平行排列。 细分网格的任何一侧与X射线吸收部分和X射线透射部分的延伸方向平行。