Abstract:
A method for manufacturing a thin film negative temperature coefficient thermistor is disclosed. The method includes selecting a negative temperature coefficient of resistance versus temperature curve, selecting a mixture of metal film materials to provide the negative temperature coefficient of resistance curve while maintaining a desired physical size, and depositing the mixture of metal film materials on a substrate.
Abstract:
The present invention describes an NTC element having a body that includes at least a first (2) and a second (5) three-dimensionally formed ceramic section of different NTC materials, where at least a first and a second contact layer are provided on the surface of the body. In addition, electrically conductive electrode layers are present in the interior of the body. By varying both the relative arrangement and the relative proportions of the two ceramic sections in the body, through suitable combinations of materials and variation of the layers of electrodes, it is possible to produce NTC elements with different electrical properties while the dimensions of the body remain the same.
Abstract:
A semiconductor ceramic for thermistors contains zinc oxide and titanium oxide as main components and a predetermined content of manganese. Also, a chip-type thermistor including the semiconductor ceramic is provided. By adding manganese, the resistance-temperature characteristic is controllable in the range of positive temperature coefficient to negative temperature coefficient. Also, by adding nickel, the resistivity is controllable. As a result, a thermistor material which provides a series of semiconductor ceramics having various resistivities and various B constants in a low range, for example 0 to 1,000 K, is available.
Abstract:
An NTC thermistor has an electrically insulating substrate, a temperature-sensitive film on a surface of the substrate containing oxide of rare earth elements such as LaCoO3 as its principal component by at least 50 weight %, and a pair of electrodes which are separated from each other and are each electrically connected to this film. An NTC thermistor chip is obtained by further forming a pair of outer electrodes which are each on a corresponding end portion and electrically connected to a corresponding one of the surface electrodes.
Abstract:
A semiconductive ceramic having a negative temperature coefficient of resistance, includes an oxide of a rare earth transition element excluding Ce and including Y, with the addition of at least one of the following elements: Si, Zr, Hf, Ta, Sn, Sb, W, Mo, Te or Ce.
Abstract:
It is an object of the present invention to provide an improved negative temperature coefficient thermistor capable of increasing an adhesion strength between a negative temperature coefficient thermistor element consisting of LaCoO.sub.3 rare earth transition element oxide on one hand and electrodes on the other, thereby improving a reliability of the thermistor product. The negative temperature coefficient thermistor of the present invention is obtained by forming electrodes on the surface of a negative temperature coefficient thermistor element consisting of LaCoO.sub.3 rear earth transition element oxide. Such electrodes are formed by adding one or more kinds of oxide powders of Ni, Cr, Mn and Fe in a metal powder, with the content of the oxide powders in the metal powder being 1.0 wt % or less (however, not including 0 wt %).
Abstract:
Provided is a semiconductive ceramic composition comprising a lanthanum cobalt oxide and having a negative resistance-temperature characteristic, which contains, as the side component, a chromium oxide in an amount of from about 0.005 to 30 mol % in terms of chromium, and also a semiconductive ceramic device comprising the composition. The device is usable for rush current inhibition, for motor start-up retardation and for halogen lamp protection, and is also usable in temperature-compensated crystal oscillators.
Abstract:
The invention relates to the growth of nickel manganese oxide monocrystals having a cubic spinel geometry. Methods of their growth and sensors constructed with same are also described.
Abstract:
A sintering ceramic for stable high-temperature thermistors includes a system of matter containing manganese (IV) and a content of a basic oxide. A method for producing a sintering ceramic for stable high-temperature thermistors includes calcining a mixture of SrCO.sub.3 and Mn.sub.2 O.sub.3 or Mn.sub.3 O.sub.4 ; adding an oxide hydroxide of a dopant in a molar quantity x to an aqueous suspension of the calcined oxide mixture; and then carrying out a compacting densification of the system of matter.
Abstract translation:用于稳定的高温热敏电阻的烧结陶瓷包括含有锰(IV)的物质和碱性氧化物的含量的系统。 用于制造用于稳定的高温热敏电阻的烧结陶瓷的方法包括煅烧SrCO 3和Mn 2 O 3或Mn 3 O 4的混合物; 向煅烧氧化物混合物的水性悬浮液中加入摩尔量x的掺杂剂的氧化物氢氧化物; 然后对物质系统进行压实致密化。
Abstract:
A thermistor chip has an elongated ceramic thermistor body with an outside surface and opposite ends. A dielectric envelope excapsulates the outer surface of the body, and conductive terminal caps are formed on the end of the body. The material of the thermistor is Mn.sub.2 O.sub.3, NiO, Co.sub.3 O.sub.4, Al.sub.2 O.sub.3, CuO, or Fe.sub.2 O.sub.3.