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    THIN FILM WITH NEGATIVE TEMPERATURE COEFFICIENT BEHAVIOR AND METHOD OF MAKING THEREOF
    3.
    发明申请
    THIN FILM WITH NEGATIVE TEMPERATURE COEFFICIENT BEHAVIOR AND METHOD OF MAKING THEREOF 审中-公开
    具有负温度系数的薄膜及其制造方法

    公开(公告)号：US20150108632A1

    公开(公告)日：2015-04-23

    申请号：US14335947

    申请日：2014-07-21

    Applicant: Nano and Advanced Materials Institute Limited

    Inventor： Caiming SUN

    IPC: H01L23/373 ,  C09D11/52 ,  C08K7/10 ,  H01L21/02

    CPC classification number: C08K7/10 ,  C08K2201/001 ,  C09D11/52 ,  G01K7/183 ,  H01C7/006 ,  H01C7/042 ,  H01C7/043 ,  H01C7/049 ,  H01C17/06513 ,  H01C17/06593 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02628

    Abstract: A conductive thin film including a binder matrix and semiconductor nanowires dispersed therein is disclosed. The semiconductor nanowires are in the range of 30% to 50% by weight percentage of the thin film. The present invention also discloses a method of making such thin film. The method includes the steps of: mixing a plurality of semiconductor nanowires with a polymer binder to obtain a printing ink; thinning the printing ink with a solvent to achieve a predetermined viscosity; printing the printing ink on a substrate to form a conductive thin film thereon and evaporating the solvent at a rate slower than the evaporation rate of water.

    Abstract translation: 公开了一种包含粘合剂基质和分散在其中的半导体纳米线的导电薄膜。 半导体纳米线在薄膜的30〜50重量％的范围内。 本发明还公开了制造这种薄膜的方法。 该方法包括以下步骤：将多个半导体纳米线与聚合物粘合剂混合以获得印刷油墨; 用溶剂稀释印刷油墨以达到预定的粘度; 将印刷油墨印刷在基材上以在其上形成导电薄膜并以比水的蒸发速率慢的速率蒸发溶剂。

    NTC THIN FILM THERMAL RESISTOR AND A METHOD OF PRODUCING IT
    5.
    发明申请
    NTC THIN FILM THERMAL RESISTOR AND A METHOD OF PRODUCING IT 审中-公开
    NTC薄膜热电阻及其生产方法

    公开(公告)号：US20110068890A1

    公开(公告)日：2011-03-24

    申请号：US12919169

    申请日：2008-12-05

    Applicant: Chuanren Yang ,  Hongwei Chen ,  Jihua Zhang ,  Lijun Yang

    Inventor： Chuanren Yang ,  Hongwei Chen ,  Jihua Zhang ,  Lijun Yang

    IPC: H01C7/04 ,  H01C7/02

    CPC classification number: H01C1/1413 ,  H01C1/14 ,  H01C7/041 ,  H01C7/043 ,  Y10T29/49085

    Abstract: This invention relates to a method for thin film device. The method for manufacturing a thin film negative temperature coefficient thermistor is disclosed. It includes selecting a substrate, a temperature-sensitive layer, inner electrodes, a protective layer and end electrodes. The temperature-sensitive layer is an NTC thin film, the inner electrodes have a comb-shaped structure. The resistance value of the present invention can be regulated by changing material composition and the width, gap, length of comb-shaped electrodes, which are not influenced by the error of the thermistor physical size. In present invention, a high temperature glaze is engaged to smooth the surface of cheaper ceramic substrates. This process reduces the manufacturing cost, improves the structure, enhances the reliability and the yield and thus expands the application scope of the NTC thin film thermistor chips. The invention has an industrial practicability.

    Abstract translation: 本发明涉及一种薄膜器件的方法。 公开了薄膜负温度系数热敏电阻的制造方法。 其包括选择基板，感温层，内电极，保护层和端电极。 温度敏感层是NTC薄膜，内部电极具有梳状结构。 可以通过改变不受热敏电阻物理尺寸的误差影响的梳状电极的材料组成和宽度，间隙，长度来调节本发明的电阻值。 在本发明中，高温釉料被接合以使廉价陶瓷基板的表面光滑。 该工艺降低了制造成本，改善了结构，提高了可靠性和产量，从而扩大了NTC薄膜热敏电阻芯片的应用范围。 本发明具有工业实用性。

    CIRCUIT ARRANGEMENT COMPRISING AN SMD-COMPONENT, IN PARTICULAR A TEMPERATURE SENSOR, AND A METHOD OF MANUFACTURING A TEMPERATURE SENSOR
    7.
    发明申请
    CIRCUIT ARRANGEMENT COMPRISING AN SMD-COMPONENT, IN PARTICULAR A TEMPERATURE SENSOR, AND A METHOD OF MANUFACTURING A TEMPERATURE SENSOR 失效
    包含SMD元件，特别是温度传感器的电路布置，以及制造温度传感器的方法

    公开(公告)号：US20020050921A1

    公开(公告)日：2002-05-02

    申请号：US09139201

    申请日：1998-08-24

    Inventor： WILHELM A. GROEN ,  VALERIE R.C.M.J. SILLEN

    IPC: H01C001/012

    CPC classification number: H01C1/142 ,  G01K7/22 ,  H01C7/043 ,  H01L2924/0002 ,  H05K3/321 ,  H05K2201/0209 ,  H05K2201/10636 ,  H05K2201/10984 ,  H05K2203/1453 ,  Y02P70/611 ,  Y10T29/49082 ,  H01L2924/00

    Abstract: The invention relates to a circuit arrangement comprising an SMD-component (1), in particular a temperature sensor with a thermistor element (1), having two electroconductive contacts (2a, 2b), which are each conductively connected to a conductor track (3a, 3b) provided on a substrate (4). A firm, mechanical connection as well as a good electroconductive connection between the SMD-component and the conductor tracks is achieved in that the contacts (2a, 2b) are each made of a metal-glass layer (6) forming the connection to the conductor tracks (3a, 3b), and in that the metal-glass layer (6) is manufactured by heating a glass particle-containing metal until melting or softening of the glass particles occurs. The invention also relates to a method of manufacturing a temperature sensor and to a method of manufacturing such a connection.

    Abstract translation: 本发明涉及一种电路装置，其包括SMD组件（1），特别是具有热敏电阻元件（1）的温度传感器，具有两个导电触点（2a，2b），每个导电触点导电地连接到导体轨道 ，3b）设置在基板（4）上。 实现了SMD组件和导体轨道之间的牢固的机械连接以及良好的导电连接，其中触点（2a，2b）各自由形成与导体的连接的金属玻璃层（6）制成 轨道（3a，3b），并且金属玻璃层（6）通过加热含玻璃颗粒的金属直到发生玻璃颗粒的熔化或软化来制造。 本发明还涉及制造温度传感器的方法和制造这种连接的方法。

    Lanthanum cobalt oxide semiconductor ceramic and related devices
    9.
    发明授权
    Lanthanum cobalt oxide semiconductor ceramic and related devices 有权
    氧化钴镧半导体陶瓷及相关器件

    公开(公告)号：US06222262B1

    公开(公告)日：2001-04-24

    申请号：US09453994

    申请日：1999-12-03

    Applicant: Satoshi Ueno ,  Akinori Nakayama ,  Terunobu Ishikawa ,  Hideaki Niimi ,  Yoichi Kawase

    Inventor： Satoshi Ueno ,  Akinori Nakayama ,  Terunobu Ishikawa ,  Hideaki Niimi ,  Yoichi Kawase

    IPC: H01L710

    CPC classification number: H01C7/043

    Abstract: A semiconductor ceramic device includes a semiconductor ceramic sintered body and external electrodes. The semiconductor ceramic sintered body contains a lanthanum cobalt type oxide major component, about 0.1 to 10 mol % on an element conversion basis of an oxide of Cr as a sub-component, and about 0.001 to 0.5 mol % on an element conversion basis of at least one of the oxides of Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, Ni, Cu and Zn.

    Abstract translation: 半导体陶瓷器件包括半导体陶瓷烧结体和外部电极。 半导体陶瓷烧结体含有镧钴型氧化物主成分，以作为副成分的Cr的氧化物的元素换算率为约0.1〜10摩尔％，以元素换算为基准的约0.001〜0.5摩尔％ Li，Na，K，Rb，Cs，Be，Mg，Ca，Sr，Ba，Ni，Cu和Zn的氧化物中的至少一种。

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