公开(公告)号：US09669400B2

公开(公告)日：2017-06-06

申请号：US14777954

申请日：2014-01-15

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Masahiko Ishida ,  Hiroshi Saito ,  Atsushi Yoshida

IPC: B01J41/04 ,  B01J41/08 ,  B01J49/00 ,  C01B33/107 ,  C01B33/04 ,  B01J41/07 ,  B01J41/09 ,  B01J49/57

CPC classification number: B01J49/57 ,  B01J41/07 ,  B01J41/09 ,  C01B33/046 ,  C01B33/1071 ,  C01B33/10778 ,  C01B33/10784

Abstract: The present invention provides a technique which allows stable use of an ion-exchange resin for removing boron impurities over a long period of time in the purification step of a silane compound or a chlorosilane compound. In the present invention, a weakly basic ion-exchange resin used for the purification of a silane compound and a chlorosilane compound is cleaned with a gas containing hydrogen chloride. When this cleaning treatment is used for the initial activation of the weakly basic ion-exchange resin, a higher impurity-adsorbing capacity can be obtained. Further, use of the cleaning treatment for the regeneration of the weakly basic ion-exchange resin allows stable use of the ion-exchange resin for a long time. This allows reduction in the amount of the resin used in a long-term operation and reduction in the cost of used resin disposal.