公开(公告)号：US20230022940A1

公开(公告)日：2023-01-26

申请号：US17784411

申请日：2020-12-14

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Kenichi TAGUCHI ,  Takahiro WAKABAYASHI

IPC: H01L23/38 ,  G01J5/061 ,  H01L27/146

Abstract: A sensor device according to the present disclosure includes: a Peltier element; a sensor element thermally connected to a cooling surface of the Peltier element; and a package substrate that is thermally connected to a heat dissipation surface of the Peltier element and accommodates the Peltier element and the sensor element. In addition, the package substrate has a heat dissipation member, made of a material having a higher thermal conductivity than a material of the package substrate, on at least a part of a surface facing the heat dissipation surface of the Peltier element.

公开(公告)号：US11467036B2

公开(公告)日：2022-10-11

申请号：US17361499

申请日：2021-06-29

Applicant: United States of America, as represented by the Secretary of the Army

Inventor： Jason G. Zeibel ,  William Paul Blase ,  John K. Delaney

IPC: G01J5/061 ,  G01J5/0806 ,  F25D23/06 ,  G01J5/00

Abstract: A cold-tunnel system is disclosed for recovery of thermal emissivity of extended targets. The cold-tunnel system is comprised of an infrared camera having a thermal imaging lens; an aperture plate having a hole aligned with the thermal imaging lens; four cold-wall panels assembled in a box pattern as a cold-tunnel assembly to form a cold tunnel; an air-blowing desiccator affixed to each cold-wall panel; an external liquid chiller to chill a reservoir of working fluid; a target under test; and an extended source blackbody reference disposed directly behind the target under test.

公开(公告)号：US11462657B1

公开(公告)日：2022-10-04

申请号：US17181669

申请日：2021-02-22

Applicant: Shimon Maimon

Inventor： Shimon Maimon

IPC: H01L31/18 ,  H01L31/10 ,  H01L31/0352 ,  H01L31/0304 ,  H01L31/0296 ,  H01L27/146 ,  B82Y20/00 ,  G01J5/06 ,  G01J5/20 ,  H01L31/101 ,  G01J5/061 ,  H01L23/38 ,  G01J5/00

Abstract: Photo-detector comprising: photo absorbing layer exhibiting a valence band energy level; a barrier layer, first side of the barrier layer adjacent a first side of the photo absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and a conductance band gap sufficient to prevent tunneling of majority carriers between the photo absorbing layer and contact area, and block the flow of thermalized majority carriers between the photo absorbing layer and contact area. The photoabsorber layer extends past the one or more individual sections of the contact layer in the direction across the photodetector, and is monolithically provided for each of the individuals detector elements.

公开(公告)号：US20220291047A1

公开(公告)日：2022-09-15

申请号：US17688781

申请日：2022-03-07

Applicant: FLIR Systems AB

Inventor： Sten Lindau ,  Austin A. Richards

IPC: G01J5/061 ,  G01J5/0802 ,  G01J5/0806

Abstract: Various techniques are disclosed to reduce the effect of reflected infrared radiation on cooled thermal imaging systems. In one example, a system includes an integrated dewar cooler assembly (IDCA) configured to maintain an interior volume at a constant temperature. The system also includes a thermal imager disposed within the interior volume and configured to capture thermal images. The system also includes an optical element external to the IDCA and configured to provide reflected infrared radiation in a uniform distribution over a field of view of the thermal imager in response to emitted infrared radiation from the thermal imager. Additional methods, devices, and systems are also provided.

公开(公告)号：US11333557B2

公开(公告)日：2022-05-17

申请号：US16856680

申请日：2020-04-23

Applicant: Raytheon Company

Inventor： Gerald P. Uyeno ,  Sean D. Keller ,  Benn Gleason

IPC: G01J5/06 ,  G02B13/14 ,  H04B10/80 ,  H04B10/516 ,  G02B27/10 ,  F25D19/00 ,  G01J5/061 ,  F25B9/14 ,  G01J5/0806

Abstract: An optically powered cryogenic FPA with an optical data link eliminates electrical penetrations of the cryogenic chamber for power delivery thereby reducing heat leaks into the cold volume by copper wires and EMI. An optical splitter receives and separates an optical input signal into an optical carrier signal, an optical Data IN signal and an optical power signal. An optical-to-electrical (O/E) converter converts the optical power signal into an electrical power signal, which is converted into a plurality of DC voltage signals to supply power within the chamber. An optical data link modulates the optical carrier signal with electrical signals from the ROIC to form and output an optical Data OUT signal.

公开(公告)号：US11300453B2

公开(公告)日：2022-04-12

申请号：US17353421

申请日：2021-06-21

Applicant: William N. Carr

Inventor： William N. Carr

IPC: G01J5/00 ,  G01J5/12 ,  G01J5/20 ,  G01J5/061 ,  G01J5/08

Abstract: A thermal pixel configured as an electromagnetic emitter and/or an electromagnetic detector. The thermal pixel comprises a micro-platform suspended with semiconductor nanowires from a surrounding support platform. The nanowires comprise phononic structure providing a decrease in thermal conductivity. In some embodiments, the pixel is structured for operation within a broad bandwidth or a limited bandwidth. Metamaterial and/or photonic crystal filters provide pixel operation over a limited bandwidth. In some other embodiments, the micro-platform comprises a nanotube structure providing a broadband emission/absorption spectral response.

公开(公告)号：US11264528B2

公开(公告)日：2022-03-01

申请号：US15679487

申请日：2017-08-17

Applicant: Shimon Maimon

Inventor： Shimon Maimon

IPC: H01L31/18 ,  H01L31/0296 ,  H01L31/10 ,  G01J5/06 ,  G01J5/20 ,  H01L27/146 ,  H01L31/101 ,  B82Y20/00 ,  H01L31/0352 ,  H01L31/0304 ,  G01J5/061 ,  H01L23/38 ,  G01J5/00

Abstract: A photodetector comprising a photoabsorber, comprising a doped semiconductor, a contact layer comprising a doped semiconductor and a barrier layer comprising a charge carrier compensated semiconductor, the barrier layer compensated by doping impurities such that it exhibits a valence band energy level substantially equal to the valence band energy level of the photo absorbing layer and a conduction band energy level exhibiting a significant band gap in relation to the conduction band of the photo absorbing layer, the barrier layer disposed between the photoabsorber and contact layers. The relationship between the photo absorbing layer and contact layer valence and conduction band energies and the barrier layer conduction and valance band energies is selected to facilitate minority carrier current flow while inhibiting majority carrier current flow between the contact and photo absorbing layers.