Abstract:
The structure of materials can be characterized (e.g., via CD-SAXS) by generating a burst of electron bunches in a pulse train and accelerating the electron bunches to relativistic energies. Meanwhile, an optical cavity is filled with a laser pulse; and the electron bunches collide with the laser pulse in the optical cavity, permitting a single laser pulse to interact with the electron bunch train to generate x-rays via inverse Compton scattering. The generated x-rays are then directed to a sample, and the sample is imaged by measuring the scattering of the x-rays from the sample.
Abstract:
An assembly for Kratky collimator is provided. The assembly may be used for a small angle x-ray camera or system requiring such filtering. The assembly may include a first block with a first working surface and a second block with a second working surface. The first and second blocks may be aligned with the first working surface pointing an opposite direction of the second working surface and the first working surface being aligned in a common plane with the second working surface. In some implementations, the first block may comprise a crystal material. In some implementations, an extension may of the first block may be configured position a beamstop.
Abstract:
An apparatus for examining the surface of a crystalline sample uses in-plane grazing incidence diffraction with a position-sensitive detector. The x-ray source illuminates an extended region of the sample and, for crystal sections having the appropriate lattice orientation, an elongated diffraction signal is produced. The relative position of the sample and the x-ray beam may then be changed to illuminate different regions of the sample so that the diffraction signal corresponds to these other regions. By scanning across the entire sample, a spatial profile of the sample surface may be generated. The system may be used to locate crystal boundaries, defects, or the presence of attenuating materials on the sample surface.
Abstract:
Disclosed are apparatus and methods for determining overlay error in a semiconductor target. For illumination x-rays having at least one angle of incidence (AOI), a correlation model is obtained, and the correlation model correlates overlay error of a target with a modulation intensity parameter for each of one or more diffraction orders (or a continuous diffraction intensity distribution) for x-rays scattered from the target in response to the illumination x-rays. A first target is illuminated with illumination x-rays having the at least one AOI and x-rays that are scattered from the first target in response to the illumination x-rays are collected. An overlay error of the first target is determined based on the modulation intensity parameter of the x-rays collected from the first target for each of the one or more diffraction orders (or the continuous diffraction intensity distribution) and the correlation model.
Abstract:
Disclosed are apparatus and methods for performing small angle x-ray scattering metrology. This system includes an x-ray source for generating x-rays and illumination optics for collecting and reflecting or refracting a portion of the generated x-rays towards a particular focus point on a semiconductor sample in the form of a plurality of incident beams at a plurality of different angles of incidence (AOIs). The system further includes a sensor for collecting output x-ray beams that are scattered from the sample in response to the incident beams on the sample at the different AOIs and a controller configured for controlling operation of the x-ray source and illumination optics and receiving the output x-rays beams and generating an image from such output x-rays.
Abstract:
In accordance with an embodiment, a measuring apparatus includes a stage, an electromagnetic wave applying unit, a detector, a monitor, a detector location adjusting unit, and a measuring unit. The stage supports a substrate comprising a periodic structure on a main surface thereof. The electromagnetic wave applying unit generates electromagnetic waves and applies the electromagnetic waves to the substrate. The detector detects the intensity of the electromagnetic waves scattered or reflected by the substrate with the use of two-dimensionally arranged detection elements, and then outputs a signal. The monitor processes the signal from the detector to acquire a first scatter profile, and measure a positional deviation of the detector in accordance with the first scatter profile. The detector location adjusting unit corrects the positional deviation of the detector in accordance with the measured positional deviation. The measuring unit calculates a surface shape of the periodic structure.
Abstract:
A system for analyzing a sample is provided. The system includes a beam selection device for selecting between a one-dimensional operation mode for providing a one-dimensional x-ray beam to the sample and a two-dimensional operation mode for providing a two-dimensional x-ray beam to the sample.
Abstract:
Performing an analysis of an electronic device sample by measuring a property at a plurality of points of said electronic device sample, and in advance of said analysis subjecting said plurality of points to at least one treatment that increases the difference in said property between at least two elements of said electronic device sample.
Abstract:
The present invention discloses an article inspection device, comprising: an x-ray machine, a collimation unit, a transmission detector array and a scattering detector array. The scattering detector array comprising a plurality of same scattering detector modules arranged in a matrix of i-rows and j-columns. A transmission cross section of the article transmitted by the x-rays is divided into a plurality of same sub-regions arranged in a matrix of i-rows and j-columns. The plurality of scattering detector modules arranged in i-rows and j-columns correspond to the plurality of sub-regions arranged in i-rows and j-columns one by one for detecting pair production effect annihilation photons and Compton-effect scattering photons from the respective sub-regions. Obtaining atomic numbers of the respective sub-regions based on a ratio of the pair production effect annihilation photon count to the Compton-effect scattering photon count, so as to form a three-dimensional image of the article. In addition, the present invention further discloses an article inspection method.
Abstract:
An apparatus to examine a target volume in a patient includes an x-ray source generating a first x-ray beam targeting the target volume, and a detector which is placed at an angle less than 180 degrees relative to a beam path of the first x-ray beam to receive a second x-ray beam generated from the first x-ray beam interacting with the target volume. A method to image a target volume in a patient includes directing a first x-ray beam generated from an x-ray source at the target volume, wherein a second x-ray beam is generated by an interaction of the first x-ray beam with the target volume, detecting the second x-ray beam using a detector that is placed at less than 180 degrees relative to a path of the first x-ray beam, and obtaining spatial and temporal information of the target volume using the detected second x-ray beam.