公开(公告)号：US20090184351A1

公开(公告)日：2009-07-23

申请号：US12354575

申请日：2009-01-15

Applicant: Hiroyuki OGAWA ,  Jun LIN ,  Hideyuki KOJIMA

Inventor： Hiroyuki OGAWA ,  Jun LIN ,  Hideyuki KOJIMA

IPC: H01L27/108 ,  H01L21/8242

CPC classification number: H01L21/763 ,  H01L21/823481 ,  H01L27/0629 ,  H01L27/10805 ,  H01L27/1085

Abstract: A semiconductor device includes a semiconductor substrate, an active region formed in the semiconductor substrate and extending in a first direction, the active region including a transistor sub-region and a capacitor sub-region, a first trench extending around the transistor sub-region, an isolation layer disposed in the first trench, a second trench extending around the capacitor sub-region, a first transistor including a first insulating layer disposed on the transistor sub-region, the first transistor including a first conductive layer disposed on the first insulating layer, and a first capacitor including a second insulating layer extending over the capacitor sub-region and a sidewall of the second trench, the first capacitor including a second conductive layer disposed on the second insulating layer, the active region having an end portion in the first direction opposite to the transistor sub-region and extending across the first capacitor.

Abstract translation: 半导体器件包括半导体衬底，形成在半导体衬底中并沿第一方向延伸的有源区，包括晶体管子区和电容器子区的有源区，围绕晶体管子区延伸的第一沟槽， 设置在所述第一沟槽中的隔离层，围绕所述电容器子区域延伸的第二沟槽，包括设置在所述晶体管子区域上的第一绝缘层的第一晶体管，所述第一晶体管包括设置在所述第一绝缘层上的第一导电层 以及包括在所述电容器子区域上延伸的第二绝缘层和所述第二沟槽的侧壁的第一电容器，所述第一电容器包括设置在所述第二绝缘层上的第二导电层，所述有源区域具有在所述第一绝缘层 方向与晶体管子区域相反并延伸穿过第一电容器。

公开(公告)号：US20090183769A1

公开(公告)日：2009-07-23

申请号：US12015690

申请日：2008-01-17

Applicant: LEEYIH WANG ,  YI-JUN LIN ,  WEN-YEN CHIU ,  WEI-FANG SU

Inventor： LEEYIH WANG ,  YI-JUN LIN ,  WEN-YEN CHIU ,  WEI-FANG SU

IPC: H01L31/0264 ,  B05D5/12 ,  H01L21/033

CPC classification number: H01L51/4226 ,  H01L51/0006 ,  H01L51/002 ,  H01L51/0036 ,  H01L51/0037 ,  Y02E10/549 ,  Y02P70/521

Abstract: The present invention discloses a solar cell having a multi-layered nanostructure that is used to generate, transport, and collect electric charges. The multi-layered nanostructure comprises a cathode, a hole-blocking layer, a photo-active layer, and an anode. The hole-blocking layer is made of the material selected from the group consisting of the following: inorganic semiconducting material, metal oxide material and mixture of inorganic and metal oxide materials. The photo-active layer comprises a porous body and a conjugated polymer filler. The porous body is used as an electron acceptor while the conjugate polymer filler is as an electron donor. The conjugated polymer filler is formed in the pores of the porous body by in-situ polymerization. In addition, the invention discloses a method for preparing the solar cell having a multi-layered nanostructure.

Abstract translation: 本发明公开了一种具有用于产生，运送和收集电荷的多层纳米结构的太阳能电池。 多层纳米结构包括阴极，空穴阻挡层，光活性层和阳极。 空穴阻挡层由选自以下的材料制成：无机半导体材料，金属氧化物材料和无机和金属氧化物材料的混合物。 光活性层包括多孔体和共轭聚合物填料。 多孔体用作电子受体，而共轭聚合​​物填料是电子给体。 通过原位聚合在多孔体的孔中形成共轭聚合物填料。 此外，本发明公开了一种制备具有多层纳米结构的太阳能电池的方法。

公开(公告)号：US20070292623A1

公开(公告)日：2007-12-20

申请号：US11818456

申请日：2007-06-14

Applicant: Jun Lin

Inventor： Jun Lin

IPC: B05D7/00 ,  C08K9/00

CPC classification number: C09D1/00 ,  C08K3/36 ,  C08K9/06 ,  C09D201/005 ,  H05K3/285

Abstract: Disclosed herein is a clear coating composition comprising a dispersion of silica nano-particles prepared from silica nano-particles having reactive silane groups of 1-500 nm particle size, and at least 0.001 parts by weight of oligomer having at least two groups reactive with the silica nano-particles, or oligomer in combination with a film forming polymer, a low molecular weight coupling agent, or a combination of a film forming polymer and a low molecular weight coupling agent.

Abstract translation: 本文公开了一种透明涂料组合物，其包含由具有1-500nm粒度的反应性硅烷基团的二氧化硅纳米颗粒制备的二氧化硅纳米颗粒的分散体和至少0.001重量份具有至少两个与 二氧化硅纳米颗粒或低聚物与成膜聚合物，低分子量偶联剂或成膜聚合物和低分子量偶联剂的组合组合。

公开(公告)号：US07233610B2

公开(公告)日：2007-06-19

申请号：US10908825

申请日：2005-05-27

Applicant: Wen-How Lan ,  Yuh-Der Shiang ,  Jia-Ching Lin ,  Ker-Jun Lin ,  Kai-Fung Perng ,  Ya-Tung Cherng

Inventor： Wen-How Lan ,  Yuh-Der Shiang ,  Jia-Ching Lin ,  Ker-Jun Lin ,  Kai-Fung Perng ,  Ya-Tung Cherng

IPC: H01S5/00 ,  H01S3/20

CPC classification number: H01S5/32341 ,  H01S5/0213 ,  H01S5/0218 ,  H01S5/3201 ,  H01S5/3211 ,  H01S2304/12

Abstract: A nitride based semiconductor laser diode device comprising a selective growth mask with a grating structure is proposed. The island-like stacked epitaxial layers including the P-type cladding layer is formed from the selective growth mask upon the active layer of the semiconductor laser structure. This proposed structure can reduce the strain by the deformation due to the isolate structure. Thus, increase of thickness of the cladding layer and/or increase of composition difference can be achieved without crack existing in the island-like stacked epitaxial layers. The optical confinement can be effectively improved.

Abstract translation: 提出了一种包括具有光栅结构的选择性生长掩模的氮化物基半导体激光二极管器件。 在半导体激光器结构的有源层上由选择性生长掩模形成包括P型覆层的岛状堆叠的外延层。 这种提出的结构可以通过隔离结构的变形来减小应变。 因此，可以实现在岛状堆叠的外延层中存在裂纹的情况下，可以实现包覆层的厚度的增加和/或组成差异的增加。 可以有效地提高光学限制。

公开(公告)号：US20070015040A1

公开(公告)日：2007-01-18

申请号：US11391592

申请日：2006-03-28

Applicant: Wen Li ,  John Muldoon ,  Hiroshi Hamaguchi ,  Akira Tsujiko ,  Toshiya Saito ,  Ryszard Wycisk ,  Jun Lin ,  Peter Pintauro

Inventor： Wen Li ,  John Muldoon ,  Hiroshi Hamaguchi ,  Akira Tsujiko ,  Toshiya Saito ,  Ryszard Wycisk ,  Jun Lin ,  Peter Pintauro

IPC: H01M4/86 ,  H01M8/10

CPC classification number: H01M8/1004 ,  H01M4/622 ,  H01M4/8652 ,  H01M4/921 ,  H01M4/926 ,  H01M8/0239

Abstract: Improved polymer-based materials are described, for example for use as an electrode binder in a fuel cell. A fuel cell according to an example of the present invention comprises a first electrode including a catalyst and an electrode binder, a second electrode, and an electrolyte located between the first electrode and the second electrode. The electrolyte may be a proton-exchange membrane (PEM). The electrode binder includes one or more polymers, such as a polyphosphazene.

Abstract translation: 描述了改进的基于聚合物的材料，例如用作燃料电池中的电极粘合剂。 根据本发明实施例的燃料电池包括包含催化剂和电极粘合剂的第一电极，第二电极和位于第一电极和第二电极之间的电解质。 电解质可以是质子交换膜（PEM）。 电极粘合剂包括一种或多种聚合物，例如聚磷腈。

公开(公告)号：US07020003B2

公开(公告)日：2006-03-28

申请号：US10710123

申请日：2004-06-21

Applicant: Jun-Lin Yeh

Inventor： Jun-Lin Yeh

IPC: G11C13/00

CPC classification number: G11C29/883 ,  G11C29/88

Abstract: A device for compensating a semiconductor memory defect suitable for a semiconductor memory is provided. The device comprises: a memory array, the memory array having a memory region consisting of a plurality of memory cells, the memory array being coupled to the address decoder circuit and the sensing circuit for storing data, if the memory array has a defect, the memory array is divided into a plurality of sub-memory regions, wherein one of the plurality of sub-memory regions is defectless, the memory array is replaced by the defectless sub-memory regions for storing data. A selection circuit coupled to the control unit, selects one of the memory region and the defectless sub-memory region to store data. A first input address buffer coupled to the control unit and the address decoder circuit has an address input port and an address output port. The address input port receives a most significant bit address signal, wherein if the memory array is defectless, the selection circuit outputs a selection signal to select the memory region to store data and makes the control unit control the address output port to output the most significant bit address signal to the address decoder circuit. If the memory array has the defect, the selection circuit outputs a selection signal to select the defectless memory region to store data and makes the control unit control the address output port to output the selection signal to the address decoder circuit.

Abstract translation: 提供一种用于补偿适用于半导体存储器的半导体存储器缺陷的装置。 所述装置包括：存储器阵列，所述存储器阵列具有由多个存储器单元组成的存储器区域，所述存储器阵列耦合到地址解码器电路和用于存储数据的感测电路，如果存储器阵列具有缺陷， 存储器阵列被分成多个子存储器区域，其中多个子存储器区域中的一个是无缺陷的，存储器阵列被用于存储数据的无缺陷子存储器区域替换。 耦合到控制单元的选择电路选择存储区域和无缺陷子存储器区域之一来存储数据。 耦合到控制单元和地址解码器电路的第一输入地址缓冲器具有地址输入端口和地址输出端口。 地址输入端口接收最高有效位地址信号，其中如果存储器阵列是无缺陷的，则选择电路输出选择信号以选择存储区域以存储数据，并使控制单元控制地址输出端口以输出最高有效位 位地址信号到地址解码器电路。 如果存储器阵列具有缺陷，则选择电路输出选择信号以选择无缺陷存储区域以存储数据，并使控制单元控制地址输出端口以将选择信号输出到地址解码器电路。

公开(公告)号：US20050199893A1

公开(公告)日：2005-09-15

申请号：US10908825

申请日：2005-05-27

Applicant: Wen-How Lan ,  Yuh-Der Shiang ,  Jia-Ching Lin ,  Ker-Jun Lin ,  Kai-Fung Perng ,  Ya-Tung Cherng

Inventor： Wen-How Lan ,  Yuh-Der Shiang ,  Jia-Ching Lin ,  Ker-Jun Lin ,  Kai-Fung Perng ,  Ya-Tung Cherng

IPC: H01L21/00 ,  H01S5/00 ,  H01S5/02 ,  H01S5/32 ,  H01S5/323

CPC classification number: H01S5/32341 ,  H01S5/0213 ,  H01S5/0218 ,  H01S5/3201 ,  H01S5/3211 ,  H01S2304/12

Abstract: A nitride based semiconductor laser diode device comprising a selective growth mask with a grating structure is proposed. The island-like stacked epitaxial layers including the P-type cladding layer is formed from the selective growth mask upon the active layer of the semiconductor laser structure. This proposed structure can reduce the strain by the deformation due to the isolate structure. Thus, increase of thickness of the cladding layer and/or increase of composition difference can be achieved without crack existing in the island-like stacked epitaxial layers. The optical confinement can be effectively improved.

Abstract translation: 提出了一种包括具有光栅结构的选择性生长掩模的氮化物基半导体激光二极管器件。 在半导体激光器结构的有源层上由选择性生长掩模形成包括P型覆层的岛状堆叠的外延层。 这种提出的结构可以通过隔离结构的变形来减小应变。 因此，可以实现在岛状堆叠的外延层中存在裂纹的情况下，可以实现包覆层的厚度的增加和/或组成差异的增加。 可以有效地提高光学限制。

公开(公告)号：US20050198892A1

公开(公告)日：2005-09-15

申请号：US10796087

申请日：2004-03-10

Applicant: Jun Lin

Inventor： Jun Lin

IPC: A01K69/06 ,  A01M23/08

CPC classification number: A01K69/06

Abstract: An improved underwater trap structure is disclosed. The trap structure is easily assembled and conveniently disassembling, and facilitates the trapping of fishes and crabs. The trap structure can sink down to the bottom of waters without being hooked. The trap structure has a trapping cylinder having a handle positioned at the center of the cylinder, and an entrance at the front portion of the trapping cylinder. The entrance is positioned with a rubber funnel having a front grip which is fastened using a front mount. The rear section of the trapping cylinder is mounted with a securing hole and a bait cylinder for holding bait is placed which is secured by a rear cover.

Abstract translation: 公开了一种改进的水下陷阱结构。 捕捉结构易于组装，方便拆卸，便于钓鱼和捕蟹。 陷阱结构可以下沉到水底而不被钩住。 捕集器结构具有捕捉缸，其具有位于气缸中心的手柄，以及在捕集筒前部的入口。 入口设置有具有前把手的橡胶漏斗，该前把手使用前支架紧固。 捕集筒的后部安装有固定孔，并且放置用于保持诱饵的诱饵筒，其由后盖固定。

公开(公告)号：US20050174827A1

公开(公告)日：2005-08-11

申请号：US10710123

申请日：2004-06-21

Applicant: Jun-Lin Yeh

Inventor： Jun-Lin Yeh

IPC: G11C7/00 ,  G11C11/21 ,  G11C29/00

CPC classification number: G11C29/883 ,  G11C29/88

Abstract: A device for compensating a semiconductor memory defect suitable for a semiconductor memory is provided. The device comprises: a memory array, the memory array having a memory region consisting of a plurality of memory cells, the memory array being coupled to the address decoder circuit and the sensing circuit for storing data, if the memory array has a defect, the memory array is divided into a plurality of sub-memory regions, wherein one of the plurality of sub-memory regions is defectless, the memory array is replaced by the defectless sub-memory regions for storing data. A selection circuit coupled to the control unit, selects one of the memory region and the defectless sub-memory region to store data. A first input address buffer coupled to the control unit and the address decoder circuit has an address input port and an address output port. The address input port receives a most significant bit address signal, wherein if the memory array is defectless, the selection circuit outputs a selection signal to select the memory region to store data and makes the control unit control the address output port to output the most significant bit address signal to the address decoder circuit. If the memory array has the defect, the selection circuit outputs a selection signal to select the defectless memory region to store data and makes the control unit control the address output port to output the selection signal to the address decoder circuit.

Abstract translation: 提供一种用于补偿适用于半导体存储器的半导体存储器缺陷的装置。 所述装置包括：存储器阵列，所述存储器阵列具有由多个存储器单元组成的存储器区域，所述存储器阵列耦合到地址解码器电路和用于存储数据的感测电路，如果存储器阵列具有缺陷， 存储器阵列被分成多个子存储器区域，其中多个子存储器区域中的一个是无缺陷的，存储器阵列被用于存储数据的无缺陷子存储器区域替换。 耦合到控制单元的选择电路选择存储区域和无缺陷子存储器区域之一来存储数据。 耦合到控制单元和地址解码器电路的第一输入地址缓冲器具有地址输入端口和地址输出端口。 地址输入端口接收最高有效位地址信号，其中如果存储器阵列是无缺陷的，则选择电路输出选择信号以选择存储区域以存储数据，并使控制单元控制地址输出端口以输出最高有效位 位地址信号到地址解码器电路。 如果存储器阵列具有缺陷，则选择电路输出选择信号以选择无缺陷存储区域以存储数据，并使控制单元控制地址输出端口以将选择信号输出到地址解码器电路。

公开(公告)号：US20050125849A1

公开(公告)日：2005-06-09

申请号：US10974265

申请日：2004-10-27

Applicant: Sergey Shmelkov ,  Shahin Rafii ,  Jun Lin

Inventor： Sergey Shmelkov ,  Shahin Rafii ,  Jun Lin

IPC: C12N15/85 ,  A01K67/027 ,  C07H21/04 ,  C12N5/08 ,  C12N9/10 ,  C12Q1/68

CPC classification number: C12N15/85 ,  A01K2217/05 ,  C12N2830/008 ,  C12N2830/46

Abstract: The present invention relates to a method of isolating stem cells from a mixed population of different cell types. This method involves selecting a promoter which functions only in said stem cells and not in the other cell types. The promoter can have a nucleotide sequence selected from the group consisting of SEQ ID NO: 4, SEQ ID NO: 5, SEQ ID NO: 6, SEQ ID NO: 7, and SEQ ID NO: 8. A nucleic acid molecule encoding a marker protein under control of said promoter is introduced into all cell types of said mixed population and only the stem cells, but not the other cell types, within said mixed population are allowed to express said marker protein. The cells of said mixed population of cell types that are expressing the marker protein, which are restricted to the stem cells are identified and separated from the mixed population, where the separated cells are restricted to the stem cells. The promoter, nucleic acid constructs comprising it, and the resulting stem cells are also disclosed. The nucleic constructs can be incorporated in transgenic animals in order to monitor stem cell movement. A disorder mediated by stem cell proliferation can be carried out by administering both (1) a nucleic acid construct comprising the promoter of the present application and an enzyme capable of converting a prodrug to a cytotoxic drug and (2) the prodrug.

Abstract translation: 本发明涉及从不同细胞类型的混合群体中分离干细胞的方法。 该方法包括选择仅在所述干细胞中起作用但不在其它细胞类型中起作用的启动子。 启动子可以具有选自SEQ ID NO：4，SEQ ID NO：5，SEQ ID NO：6，SEQ ID NO：7和SEQ ID NO：8的核苷酸序列。 将所述启动子控制下的标记蛋白引入所述混合群体的所有细胞类型中，并且仅允许所述混合群体内的干细胞，而不是其他细胞类型表达所述标记蛋白。 将所述混合的表达限制于干细胞的标记蛋白的细胞类型的细胞群从混合群体中鉴定和分离，其中分离的细胞限于干细胞。 还公开了启动子，包含其的核酸构建体和所得干细胞。 核酸构建体可以并入转基因动物中以监测干细胞运动。 通过施用（1）包含本申请的启动子的核酸构建体和能够将前药转化为细胞毒性药物的酶和（2）前药，可以进行由干细胞增殖介导的病症。