公开(公告)号：US07745895B2

公开(公告)日：2010-06-29

申请号：US11567931

申请日：2006-12-07

Applicant: Youichi Nagai ,  Yasuhiro Iguchi ,  Hiroshi Inada

Inventor： Youichi Nagai ,  Yasuhiro Iguchi ,  Hiroshi Inada

IPC: H01L31/0232 ,  H01L31/14

CPC classification number: H01S5/0683 ,  H01S5/02284 ,  H01S5/02292

Abstract: The present invention provides a semiconductor light emitting device capable of easily realizing stable output characteristics within a wide temperature range. The semiconductor light emitting device includes a semiconductor laser element, and a semiconductor photodiode having an absorption layer disposed on a semiconductor substrate, a second conductivity type region formed in a cap layer and the absorption layer, and a transmissive reflection film disposed on the back side of the semiconductor substrate. The semiconductor photodiode is mounted with the epitaxial layer side down, and the transmissive reflection film is irradiated with a laser beam emitted from the semiconductor laser element so that light reflected from the transmissive reflection film is used as output light, and transmitted light is received by the semiconductor photodiode and used for controlling the output of the semiconductor laser element.

Abstract translation: 本发明提供一种能够在宽的温度范围内容易地实现稳定的输出特性的半导体发光装置。 半导体发光器件包括半导体激光元件和具有设置在半导体衬底上的吸收层的半导体光电二极管，形成在帽层中的第二导电类型区域和吸收层，以及设置在背面的透射反射膜 的半导体衬底。 半导体光电二极管安装有外延层侧向下，透射反射膜用从半导体激光元件发射的激光束照射，使得从透射反射膜反射的光用作输出光，并且透射光被 半导体光电二极管，用于控制半导体激光元件的输出。

公开(公告)号：US20100072457A1

公开(公告)日：2010-03-25

申请号：US12443575

申请日：2008-07-18

Applicant: Yasuhiro Iguchi ,  Hiroshi Okada ,  Yuichi Kawamura

Inventor： Yasuhiro Iguchi ,  Hiroshi Okada ,  Yuichi Kawamura

IPC: H01L31/0352

CPC classification number: H01L31/035236 ,  B82Y20/00 ,  H01L27/14649 ,  H01L31/03046 ,  Y02E10/544

Abstract: A light-receiving element device capable of receiving near infrared to mid-infrared light of 1.7 μm-3.5 μm is provided. A substrate is formed of InP, and a superlattice light-receiving layer is formed of a superlattice of a type 2 junction formed by alternately being stacked a falling layer of a Group III-V compound semiconductor including In, Ga, As, N and a rising layer of a Group III-V compound semiconductor including Ga, As, Sb. The film thickness of the falling layer and the rising layer is each 3 nm-10 nm. The entire thickness of the superlattice light-receiving layer is 2 μm-7 μm. The lattice mismatch of the constituent film of the superlattice light-receiving layer to InP is ±0.2% or less.

Abstract translation: 提供能够接收1.7μm〜3.5μm的近红外到中红外光的受光元件装置。 衬底由InP形成，并且超晶格光接收层由通过交替堆叠包括In，Ga，As，N的III-V族化合物半导体的下降层形成的2型结的超晶格形成，以及 包含Ga，As，Sb的III-V族化合物半导体的上升层。 下降层和上升层的膜厚分别为3nm〜10nm。 超晶格光接收层的整个厚度为2μm-7μm。 超晶格光接收层的构成膜与InP的晶格失配为±0.2％以下。

公开(公告)号：US07608825B2

公开(公告)日：2009-10-27

申请号：US11954617

申请日：2007-12-12

Applicant: Youichi Nagai ,  Yasuhiro Iguchi ,  Hiroshi Inada

Inventor： Youichi Nagai ,  Yasuhiro Iguchi ,  Hiroshi Inada

IPC: G01J5/20

CPC classification number: H01L27/14643 ,  H01L27/14621 ,  H01L27/14634 ,  H01L27/14636 ,  H01L31/03042 ,  H01L31/145

Abstract: There is provided an image pickup device which picks up an image of an object by absorbing light in a near infrared region reflected from the object and which has semiconductor photodetectors including an absorption layer of a bandgap wavelength in the range of 1.65 to 3.0 μm.

Abstract translation: 提供了一种图像拾取装置，其通过吸收从物体反射的近红外区域中的光拾取物体的图像，并且具有半导体光电检测器，该半导体光电检测器包括1.65至3.0μm范围内的带隙波长的吸收层。

公开(公告)号：US07605406B2

公开(公告)日：2009-10-20

申请号：US11557427

申请日：2006-11-07

Applicant: Yasuhiro Iguchi

Inventor： Yasuhiro Iguchi

IPC: H01L27/142

CPC classification number: H01L27/1446

Abstract: A rear-illuminated-type photodiode array has (a) a first-electroconductive-type semiconductor substrate, (b) a first-electroconductive-type electrode that is placed at the rear side of the semiconductor substrate and has openings arranged one- or two-dimensionally, (c) an antireflective coating provided at each of the openings of the first-electroconductive-type electrode, (d) a first-electroconductive-type absorption layer formed at the front-face side of the substrate, (e) a leakage-lightwave-absorbing layer that is provided on the absorption layer and has an absorption edge wavelength longer than that of the absorption layer, (f) a plurality of second-electroconductive-type regions that are formed so as to penetrate through the leakage-lightwave-absorbing layer from the top surface and extend into the absorption layer to a certain extent and are arranged one- or two-dimensionally at the positions coinciding with those of the antireflective coatings at the opposite side, and (g) a second-electroconductive-type electrode provided on the top surface of each of the second-electroconductive-type regions.

Abstract translation: 背照式光电二极管阵列具有（a）第一导电型半导体基板，（b）第一导电型电极，其设置在半导体基板的后侧，并且具有一或二个开口 （c）设置在第一导电型电极的每个开口处的抗反射涂层，（d）形成在基板的正面侧的第一导电型吸收层，（e） 设置在吸收层上并具有比吸收层的吸收边长波长的吸收边缘波长的漏光波吸收层，（f）多个第二导电型区域， 光吸收层从上表面延伸到吸收层一定程度，并且在相反侧的抗反射涂层的位置一一或二维地排列，（g）一个 设置在每个第二导电型区域的顶表面上的导电型电极。

公开(公告)号：US20090001412A1

公开(公告)日：2009-01-01

申请号：US12163039

申请日：2008-06-27

Applicant: Youichi Nagai ,  Yasuhiro Iguchi ,  Kouhei Miura

Inventor： Youichi Nagai ,  Yasuhiro Iguchi ,  Kouhei Miura

IPC: H01L31/0336 ,  H01L31/18

CPC classification number: H01L27/14643 ,  H01L27/14694 ,  H01L31/101 ,  H01L31/184 ,  Y02E10/544 ,  Y02P70/521

Abstract: The invention offers a photodetector that has an N-containing InGaAs-based absorption layer having a sensitivity in the near-infrared region and that suppresses the dark current and a production method thereof. The photodetector is provided with an InP substrate 1, an N-containing InGaAs-based absorption layer 3 positioned above the InP substrate 1, a window layer 5 positioned above the N-containing InGaAs-based absorption layer 3, and an InGaAs buffer layer 4 positioned between the N-containing InGaAs-based absorption layer 3 and the window layer 5.

Abstract translation: 本发明提供了一种具有在近红外区域具有灵敏度并且抑制暗电流的含N的InGaAs基吸收层的光电检测器及其制造方法。 光电检测器设置有InP基板1，位于InP基板1上方的含有N的InGaAs基吸收层3，位于含N的InGaAs基吸收层3上方的窗口层5和InGaAs缓冲层4 位于含N的InGaAs基吸收层3和窗口层5之间。

公开(公告)号：US20080142714A1

公开(公告)日：2008-06-19

申请号：US11954617

申请日：2007-12-12

Applicant: Youichi Nagai ,  Yasuhiro Iguchi ,  Hiroshi Inada

Inventor： Youichi Nagai ,  Yasuhiro Iguchi ,  Hiroshi Inada

IPC: H01L25/00 ,  H01L31/00

CPC classification number: H01L27/14643 ,  H01L27/14621 ,  H01L27/14634 ,  H01L27/14636 ,  H01L31/03042 ,  H01L31/145

Abstract: There is provided an image pickup device which picks up an image of an object by absorbing light in a near infrared region reflected from the object and which has semiconductor photodetectors including an absorption layer of a bandgap wavelength in the range of 1.65 to 3.0 μm.

Abstract translation: 提供了一种图像拾取装置，其通过吸收从物体反射的近红外区域中的光来拾取物体的图像，并且具有半导体光电检测器，该半导体光电检测器包括1.65至3.0μm范围内的带隙波长的吸收层。

公开(公告)号：US20070194401A1

公开(公告)日：2007-08-23

申请号：US11709393

申请日：2007-02-21

Applicant: Youichi Nagai ,  Yasuhiro Iguchi ,  Hiroshi Inada

Inventor： Youichi Nagai ,  Yasuhiro Iguchi ,  Hiroshi Inada

IPC: H01L31/00

CPC classification number: H01L31/02165 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1464 ,  H01L31/022416 ,  H01L31/03046

Abstract: A photodetector having a mechanism of suppressing light crosstalk includes a plurality of photodiodes disposed on a common semiconductor substrate, each photodiode including an absorption layer epitaxially grown on the common semiconductor substrate and being provided with an epitaxial-side electrode. Each photodiode is provided with at least one of a ring-shaped or crescent-shaped epitaxial-side electrode, an incident-side-limited condensing part which condenses incident light that is directed to the corresponding photodiode only, and emission means which is disposed on a side opposite to a light-incident side of the absorption layer and which allows light entering from the light-incident side to be easily emitted out of the photodiode.

Abstract translation: 具有抑制光串扰的机构的光电检测器包括设置在公共半导体衬底上的多个光电二极管，每个光电二极管包括在公共半导体衬底上外延生长并设有外延侧电极的吸收层。 每个光电二极管设置有至少一个环形或月牙形的外延侧电极，仅将引导到相应的光电二极管的入射光聚光的入射侧限制的聚光部分，以及放置在 与吸收层的光入射侧相对的一侧，允许从光入射侧进入的光容易地从光电二极管发射出。

公开(公告)号：US20070138490A1

公开(公告)日：2007-06-21

申请号：US11567931

申请日：2006-12-07

Applicant: Youichi Nagai ,  Yasuhiro Iguchi ,  Hiroshi Inada

Inventor： Youichi Nagai ,  Yasuhiro Iguchi ,  Hiroshi Inada

IPC: H01L33/00

CPC classification number: H01S5/0683 ,  H01S5/02284 ,  H01S5/02292

Abstract: The present invention provides a semiconductor light emitting device capable of easily realizing stable output characteristics within a wide temperature range. The semiconductor light emitting device includes a semiconductor laser element, and a semiconductor photodiode having an absorption layer disposed on a semiconductor substrate, a second conductivity type region formed in a cap layer and the absorption layer, and a transmissive reflection film disposed on the back side of the semiconductor substrate. The semiconductor photodiode is mounted with the epitaxial layer side down, and the transmissive reflection film is irradiated with a laser beam emitted from the semiconductor laser element so that light reflected from the transmissive reflection film is used as output light, and transmitted light is received by the semiconductor photodiode and used for controlling the output of the semiconductor laser element.

Abstract translation: 本发明提供一种能够在宽的温度范围内容易地实现稳定的输出特性的半导体发光装置。 半导体发光器件包括半导体激光元件和具有设置在半导体衬底上的吸收层的半导体光电二极管，形成在帽层中的第二导电类型区域和吸收层，以及设置在背面的透射反射膜 的半导体衬底。 半导体光电二极管安装有外延层侧向下，透射反射膜用从半导体激光元件发射的激光束照射，使得从透射反射膜反射的光用作输出光，并且透射光被 半导体光电二极管，用于控制半导体激光元件的输出。

公开(公告)号：US20050096482A1

公开(公告)日：2005-05-05

申请号：US10502681

申请日：2002-10-28

Applicant: Ryozo Tamada ,  Yasuhiro Iguchi ,  Nobu Yoshimura ,  Shinichi Otuka

Inventor： Ryozo Tamada ,  Yasuhiro Iguchi ,  Nobu Yoshimura ,  Shinichi Otuka

IPC: C08J11/12 ,  C08J11/24 ,  C07C67/02

CPC classification number: C08J11/24 ,  C08J2367/02 ,  Y02W30/706

Abstract: A method of depolymerizing polyethylene terephthalate, and a method of manufacturing a polyester resin. When heating, melting and depolymerizing polyethylene terephthalate to be recycled, the heating, melting and depolymerization reaction of the polyethylene terephthalate to be recycled are carried out all at once using one or a plurality of extruders or using an extruder and a reactor provided at an outlet of the extruder. When manufacturing a polyester resin, the reactants are irradiated with microwaves, thus promoting the heating of the reactants, and promoting the esterification reaction.

Abstract translation: 聚对苯二甲酸乙二醇酯的解聚方法以及聚酯树脂的制造方法。 当加热，熔解和解聚聚对苯二甲酸乙二醇酯进行再循环时，使用一个或多个挤出机一次性使用挤出机和设置在出口处的反应器一次性进行待再循环的聚对苯二甲酸乙二醇酯的加热，熔融和解聚反应 的挤出机。 当制造聚酯树脂时，用微波照射反应物，从而促进反应物的加热，并促进酯化反应。

公开(公告)号：US06214708B1

公开(公告)日：2001-04-10

申请号：US09363397

申请日：1999-07-29

Applicant: Yasuhiro Iguchi ,  Sosuke Sowa

Inventor： Yasuhiro Iguchi ,  Sosuke Sowa

IPC: H01L2138

CPC classification number: H01L21/67109 ,  H01L21/2233

Abstract: An LPE (Liquid Phase Epitaxy) apparatus is diverted to a Zn-diffusion apparatus for diffusing Zn into III-V group compound semiconductor. The Zn-diffusion apparatus comprises a base plank extending in a direction, having a wafer-storing cavity for storing an object wafer and an exhaustion hole for exhaling gases, a slider having a frame and a cap plate for attaching to or detaching from the frame, the frame having serially aligning M rooms with an open bottom and a rack being separated from each other by (M−1) partition walls, a manipulating bar for sliding the slider upon the base plank forward or backward in the direction, a tube for enclosing the base plank and the slider and for being capable of being made vacuous, a heater surrounding the tube for heating the slider, each rack of the rooms being allocated with a Zn-diffusion material and a V element material (or a non-doped capping wafer) in turn for aligning the rooms into repetitions of a V element room and a diffusion room. The V element room or the capping wafer covers and protects the object wafer during the heating step. During the diffusion step, the diffusion room covers the object wafer for diffusing Zn into the wafer.

Abstract translation: 将LPE（液相外延）装置转移到用于将Zn扩散到III-V族化合物半导体中的Zn扩散装置。 Zn扩散装置包括沿着方向延伸的底板，具有用于存储物体晶片的晶片储存腔和用于呼出气体的排气孔;具有框架的滑块和用于附接到框架或从框架拆卸的盖板 （M-1）分隔壁彼此分离的具有开放底部和齿条的M个房间的框架，用于将滑块在基板上沿着该方向向前或向后滑动的操纵杆，用于 封闭基板和滑块并且能够被制成真空的围绕管的加热器的加热器，每个机架的房间被分配有Zn扩散材料和V元件材料（或非掺杂的 盖子晶片）反过来将房间对准V元件室和扩散室的重复。 V元件室或封盖晶片在加热步骤期间覆盖并保护对象晶片。 在扩散步骤期间，扩散室覆盖用于将Zn扩散到晶片中的目标晶片。