公开(公告)号：US20150261097A1

公开(公告)日：2015-09-17

申请号：US14418373

申请日：2013-07-16

Applicant: ASML Netherlands B.V.

Inventor： Simon Gijsbert Josephus Mathijssen ,  Arie Jeffrey Den Boef

IPC: G03F7/20

CPC classification number: G03F7/70141 ,  G03F9/7026 ,  G03F9/7034

Abstract: An apparatus for measuring positions of marks on a substrate, includes an illumination arrangement for supplying radiation with a predetermined illumination profile across a pupil of the apparatus, an objective lens for forming a spot of radiation on a mark using radiation supplied by said illumination arrangement, a radiation processing element for processing radiation that is diffracted by the mark, a first detection arrangement for detecting variations in an intensity of radiation output by the radiation processing element and for calculating therefrom a position of the mark, an optical arrangement, a second detection arrangement, wherein the optical arrangement serves to direct diffracted radiation to the second detection arrangement, and wherein the second detection arrangement is configured to detect size and/or position variations in the radiation and to calculate therefrom a defocus and/or local tilt of the mark.

Abstract translation: 一种用于测量基板上的标记位置的装置，包括：用于向装置的瞳孔提供具有预定照明轮廓的辐射的照明装置;用于使用由所述照明装置提供的辐射在标记上形成辐射点的物镜; 用于处理由标记衍射的辐射的辐射处理元件;第一检测装置，用于检测由辐射处理元件输出的辐射强度的变化，并从其计算标记的位置，光学装置，第二检测装置 ，其中所述光学装置用于将衍射辐射引导到所述第二检测装置，并且其中所述第二检测装置被配置为检测所述辐射中的尺寸和/或位置变化并由其计算所述标记的散焦和/或所述局部倾斜。

公开(公告)号：US08994944B2

公开(公告)日：2015-03-31

申请号：US14149723

申请日：2014-01-07

Applicant: ASML Netherlands B.V.

Inventor： Hugo Augustinus Joseph Cramer ,  Arie Jeffrey Den Boef ,  Henricus Johannes Lambertus Megens ,  Hendrik Jan Hidde Smilde ,  Adrianus Johannes Hendrikus Schellekens ,  Michael Kubis

IPC: G01B11/00 ,  G01B11/24 ,  G01B11/02 ,  G03F7/20 ,  G01N21/88

CPC classification number: G03F7/70641 ,  G01B11/02 ,  G01B11/22 ,  G01B11/24 ,  G01B11/30 ,  G01N21/47 ,  G01N21/88 ,  G03F7/70608 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/7065

Abstract: In a method of determining the focus of a lithographic apparatus used in a lithographic process on a substrate, the lithographic process is used to form a structure on the substrate, the structure having at least one feature which has an asymmetry in the printed profile which varies as a function of the focus of the lithographic apparatus on the substrate. A first image of the periodic structure is formed and detected while illuminating the structure with a first beam of radiation. The first image is formed using a first part of non-zero order diffracted radiation. A second image of the periodic structure is formed and detected while illuminating the structure with a second beam of radiation. The second image is formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part in a diffraction spectrum. The ratio of the intensities of the measured first and second portions of the spectra is determined and used to determine the asymmetry in the profile of the periodic structure and/or to provide an indication of the focus on the substrate. In the same instrument, an intensity variation across the detected portion is determined as a measure of process-induced variation across the structure. A region of the structure with unwanted process variation can be identified and excluded from a measurement of the structure.

公开(公告)号：US08670118B2

公开(公告)日：2014-03-11

申请号：US13676562

申请日：2012-11-14

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey Den Boef

IPC: G01N21/00

CPC classification number: G01N21/95607 ,  G03F7/7015 ,  G03F7/70633

Abstract: Systems, methods, and apparatus are provided for determining overlay of a pattern on a substrate with a mask pattern defined in a resist layer on top of the pattern on the substrate. A first grating is provided under a second grating, each having substantially identical pitch to the other, together forming a composite grating. A first illumination beam is provided under an angle of incidence along a first horizontal direction. The intensity of a diffracted beam from the composite grating is measured. A second illumination beam is provided under the angle of incidence along a second horizontal direction. The second horizontal direction is opposite to the first horizontal direction. The intensity of the diffracted beam from the composite grating is measured. The difference between the diffracted beam from the first illumination beam and the diffracted beam from the second illumination beam, linearly scaled, results in the overlay error.

Abstract translation: 提供了系统，方法和装置，用于确定衬底上的图案的覆盖层，其中掩模图案限定在衬底上图案顶部上的抗蚀剂层中。 第一光栅设置在第二光栅下方，每个具有与另一光栅基本相同的间距，一起形成复合光栅。 沿着第一水平方向以入射角设置第一照明光束。 测量来自复合光栅的衍射光束的强度。 沿着第二水平方向的入射角设置第二照明光束。 第二水平方向与第一水平方向相反。 测量来自复合光栅的衍射光束的强度。 来自第一照明光束的衍射光束与来自第二照明光束的衍射光束之间的差异线性缩放导致重叠误差。

公开(公告)号：US12189305B2

公开(公告)日：2025-01-07

申请号：US18004555

申请日：2021-05-27

Applicant: ASML Netherlands B.V.

Inventor： Simon Gijsbert Josephus Mathijssen ,  Patricius Aloysius Jacobus Tinnemans ,  Arie Jeffrey Den Boef ,  Kaustuve Bhattacharyya ,  Samee Ur Rehman

IPC: G03F7/00 ,  G03F9/00

Abstract: Disclosed is a method of improving a measurement of a parameter of interest. The method comprises obtaining metrology data comprising a plurality of measured values of the parameter of interest, relating to one or more targets on a substrate, each measured value relating to a different measurement combination of a target of said one or more targets and a measurement condition used to measure that target and asymmetry metric data relating to asymmetry for said one or more targets. A respective relationship is determined for each of said measurement combinations relating a true value for the parameter of interest to the asymmetry metric data, based on an assumption that there is a common true value for the parameter of interest over said measurement combinations. These relationships are used to improve a measurement of the parameter of interest.

公开(公告)号：US11815675B2

公开(公告)日：2023-11-14

申请号：US17633882

申请日：2020-07-27

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey Den Boef ,  Simon Reinald Huisman

IPC: G02B26/06 ,  G02F1/11 ,  G03F9/00

CPC classification number: G02B26/06 ,  G02F1/113 ,  G03F9/7088

Abstract: Disclosed is a phase modulator apparatus comprises at least a first phase modulator for modulating input radiation, and a metrology device comprising such a phase modulator apparatus. The first phase modulator comprises a first moving grating in at least an operational state for diffracting the input radiation and Doppler shifting the frequency of the diffracted radiation; and a first compensatory grating element comprising a pitch configured to compensate for wavelength dependent dispersion of at least one diffraction order of said diffracted radiation.

公开(公告)号：US11803130B2

公开(公告)日：2023-10-31

申请号：US17633884

申请日：2020-08-05

Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

Inventor： Franciscus Godefridus Casper Bijnen ,  Muhsin Eralp ,  Simon Reinald Huisman ,  Arie Jeffrey Den Boef

IPC: G03F9/00

CPC classification number: G03F9/7049 ,  G03F9/7069 ,  G03F9/7088

Abstract: An alignment apparatus includes an illumination system configured to direct one or more illumination beams towards an alignment target and receive the diffracted beams from the alignment target. The alignment apparatus also includes a self-referencing Interferometer configured to generate two diffraction sub-beams, wherein the two diffraction sub-beams are orthogonally polarized, rotated 180 degrees with respect to each other around an alignment axis, and spatially overlapped. The alignment apparatus further includes a beam analyzer configured to generate interference between the overlapped components of the diffraction sub-beams and produce two orthogonally polarized optical branches, and a detection system configured to determine a position of the alignment target based on light intensity measurement of the optical branches, wherein the measured light intensity is temporally modulated by a phase modulator.

公开(公告)号：US11640116B2

公开(公告)日：2023-05-02

申请号：US16893619

申请日：2020-06-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Arie Jeffrey Den Boef ,  Kaustuve Bhattacharyya

IPC: G03F7/20 ,  G01B11/24 ,  G01B11/27

Abstract: A method including determining a type of structural asymmetry of the target from measured values of the target, and performing a simulation of optical measurement of the target to determine a value of an asymmetry parameter associated with the asymmetry type. A method including performing a simulation of optical measurement of a target to determine a value of an asymmetry parameter associated with a type of structural asymmetry of the target determined from measured values of the target, and analyzing a sensitivity of the asymmetry parameter to change in a target formation parameter associated with the target. A method including determining a structural asymmetry parameter of a target using a measured parameter of radiation diffracted by the target, and determining a property of a measurement beam of the target based on the structural asymmetry parameter that is least sensitive to change in a target formation parameter associated with the target.

公开(公告)号：US11619595B2

公开(公告)日：2023-04-04

申请号：US16719075

申请日：2019-12-18

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey Den Boef

IPC: G01N21/956 ,  G03F7/20

Abstract: Systems, methods, and apparatus are provided for determining overlay of a pattern on a substrate with a mask pattern defined in a resist layer on top of the pattern on the substrate. A first grating is provided under a second grating, each having substantially identical pitch to the other, together forming a composite grating. A first illumination beam is provided under an angle of incidence along a first horizontal direction. The intensity of a diffracted beam from the composite grating is measured. A second illumination beam is provided under the angle of incidence along a second horizontal direction. The second horizontal direction is opposite to the first horizontal direction. The intensity of the diffracted beam from the composite grating is measured. The difference between the diffracted beam from the first illumination beam and the diffracted beam from the second illumination beam, linearly scaled, results in the overlay error.

公开(公告)号：US11525786B2

公开(公告)日：2022-12-13

申请号：US17192276

申请日：2021-03-04

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey Den Boef ,  Arno Jan Bleeker ,  Youri Johannes Laurentius Maria Van Dommelen ,  Mircea Dusa ,  Antoine Gaston Marie Kiers ,  Paul Frank Luehrmann ,  Henricus Petrus Maria Pellemans ,  Maurits Van Der Schaar ,  Cédric Désiré Grouwstra ,  Markus Gerardus Martinus Maria Van Kraaij

IPC: G01N21/00 ,  G01N21/88 ,  G03F7/20 ,  G03F9/00

Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.

公开(公告)号：US11385553B2

公开(公告)日：2022-07-12

申请号：US17306670

申请日：2021-05-03

Applicant: ASML Netherlands B.V.

Inventor： Zili Zhou ,  Nitesh Pandey ,  Olger Victor Zwier ,  Patrick Warnaar ,  Maurits Van Der Schaar ,  Elliott Gerard McNamara ,  Arie Jeffrey Den Boef ,  Paul Christiaan Hinnen ,  Murat Bozkurt ,  Joost Jeroen Ottens ,  Kaustuve Bhattacharyya ,  Michael Kubis

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/95 ,  G01N21/956 ,  G03F9/00

Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shift (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.