Work piece carrier head for plating and polishing
    51.
    发明授权
    Work piece carrier head for plating and polishing 有权
    工件载体头用于电镀和抛光

    公开(公告)号:US06612915B1

    公开(公告)日:2003-09-02

    申请号:US09472523

    申请日:1999-12-27

    CPC classification number: B24B37/30 C25D7/12

    Abstract: A work piece carrier head can carry a semiconductor wafer during both plating and polishing operations. The carrier head includes a first component secured to a shaft by which the carrier head can be rotated, translated, and moved up and down, a second component connected to the first component and movable by fluid pressure relative to the first component between retracted and extended positions, and a third component connected to the first and second components for up and down movement between wafer loading or unloading and wafer plating or polishing positions. The third carrier head component includes a contact element by which electrical contact with the wafer is provided to permit wafer plating.

    Abstract translation: 工件载体头可以在电镀和抛光操作期间承载半导体晶片。 承载头包括固定到轴的第一部件,承载头可以通过该第一部件旋转,平移和上下移动;第二部件,连接到第一部件并且可相对于第一部件在流体压力下相对于第一部件在缩回和延伸之间移动 位置,以及连接到第一和第二部件的第三部件,用于晶片装载或卸载以及晶片电镀或抛光位置之间的上下移动。 第三载体头部件包括接触元件,通过该接触元件提供与晶片的电接触以允许晶片电镀。

    Method and apparatus employing pad designs and structures with improved fluid distribution
    52.
    发明授权
    Method and apparatus employing pad designs and structures with improved fluid distribution 失效
    使用具有改进的流体分布的垫设计和结构的方法和装置

    公开(公告)号:US06413403B1

    公开(公告)日:2002-07-02

    申请号:US09621969

    申请日:2000-07-21

    CPC classification number: B24B37/26 B23H5/08 C25D17/001 C25D17/14

    Abstract: An apparatus capable of assisting in controlling an electrolyte flow and distribution of an electric field, a magnetic field, or an electromagnetic field in order to process a substrate is provided with improved fluid distribution. A support member having a top surface and a bottom surface contains at least one support member electrolyte channel. Each support member electrolyte channel forms a passage between the top surface and the bottom surface and allows the electrolyte to flow therethrough. A pad is attachable to the support member and contains at least one set of pad electrolyte channels also allowing for electrolyte flow therethrough to the substrate. Each support member electrolyte channel is connected to one set of pad electrolyte channels by fluid distribution structure. A method of assisting in control of the electrolyte flow and distribution of the electric field, the magnetic field, or the electromagnetic field, utilizing the apparatus, is also provided.

    Abstract translation: 能够有助于控制电解质流动和电场分布,磁场或电磁场以便处理衬底的装置提供改进的流体分布。 具有顶表面和底表面的支撑构件包含至少一个支撑构件电解质通道。 每个支撑构件电解质通道在顶表面和底表面之间形成通道,并允许电解质流过其中。 衬垫可附接到支撑构件并且包含至少一组衬垫电解质通道,还允许电解质流过衬底。 每个支撑构件电解质通道通过流体分配结构连接到一组垫片电解质通道。 还提供了一种利用该装置协助控制电解质流动和分布电场,磁场或电磁场的方法。

    Vias in porous substrates
    53.
    发明授权
    Vias in porous substrates 有权
    多孔基材中的通孔

    公开(公告)号:US08975751B2

    公开(公告)日:2015-03-10

    申请号:US13092495

    申请日:2011-04-22

    Abstract: A microelectronic unit can include a substrate having front and rear surfaces and active semiconductor devices therein, the substrate having a plurality of openings arranged in a symmetric or asymmetric distribution across an area of the rear surface, first and second conductive vias connected to first and second pads exposed at the front surface, pluralities of first and second conductive interconnects extending within respective ones of the openings, and first and second conductive contacts exposed for interconnection with an external element. The plurality of first conductive interconnects can be separated from the plurality of second conductive interconnects by at least one of the plurality of openings, the at least one opening at least partially filled with an insulating material. The distribution of the openings can include at least m openings spaced apart in a first direction and n openings spaced apart in a second direction transverse to the first direction.

    Abstract translation: 微电子单元可以包括其中具有前表面和后表面的基板和其中的有源半导体器件,所述基板具有布置成在后表面的区域上的对称或不对称分布的多个开口,连接到第一和第二导电通孔的第一和第二导电通孔 在前表面暴露的焊盘,在相应的一个开口内延伸的多个第一和第二导电互连,以及暴露以与外部元件互连的第一和第二导电触点。 多个第一导电互连可以通过所述多个开口中的至少一个与所述多个第二导电互连部分开,所述至少一个开口至少部分地填充有绝缘材料。 开口的分布可以包括在第一方向上间隔开的至少m个开口和在横向于第一方向的第二方向上间隔开的n个开口。

    VIAS IN POROUS SUBSTRATES
    54.
    发明申请
    VIAS IN POROUS SUBSTRATES 有权
    多孔基材中的VIAS

    公开(公告)号:US20120267789A1

    公开(公告)日:2012-10-25

    申请号:US13092495

    申请日:2011-04-22

    Abstract: A microelectronic unit can include a substrate having front and rear surfaces and active semiconductor devices therein, the substrate having a plurality of openings arranged in a symmetric or asymmetric distribution across an area of the rear surface, first and second conductive vias connected to first and second pads exposed at the front surface, pluralities of first and second conductive interconnects extending within respective ones of the openings, and first and second conductive contacts exposed for interconnection with an external element. The plurality of first conductive interconnects can be separated from the plurality of second conductive interconnects by at least one of the plurality of openings, the at least one opening at least partially filled with an insulating material. The distribution of the openings can include at least m openings spaced apart in a first direction and n openings spaced apart in a second direction transverse to the first direction.

    Abstract translation: 微电子单元可以包括其中具有前表面和后表面的基板和其中的有源半导体器件,所述基板具有布置成在后表面的区域上的对称或不对称分布的多个开口,连接到第一和第二导电通孔的第一和第二导电通孔 在前表面暴露的焊盘,在相应的一个开口内延伸的多个第一和第二导电互连,以及暴露以与外部元件互连的第一和第二导电触点。 多个第一导电互连可以通过所述多个开口中的至少一个与所述多个第二导电互连部分开,所述至少一个开口至少部分地填充有绝缘材料。 开口的分布可以包括在第一方向上间隔开的至少m个开口和在横向于第一方向的第二方向上间隔开的n个开口。

    HIGH DENSITY THREE-DIMENSIONAL INTEGRATED CAPACITORS
    55.
    发明申请
    HIGH DENSITY THREE-DIMENSIONAL INTEGRATED CAPACITORS 有权
    高密度三维集成电容器

    公开(公告)号:US20120181658A1

    公开(公告)日:2012-07-19

    申请号:US13182890

    申请日:2011-07-14

    Abstract: A capacitor can include a substrate having a first surface, a second surface remote from the first surface, and a through opening extending between the first and second surfaces, first and second metal elements, and a capacitor dielectric layer separating and insulating the first and second metal elements from one another at least within the through opening. The first metal element can be exposed at the first surface and can extend into the through opening. The second metal element can be exposed at the second surface and can extend into the through opening. The first and second metal elements can be electrically connectable to first and second electric potentials. The capacitor dielectric layer can have an undulating shape.

    Abstract translation: 电容器可以包括具有第一表面的基板,远离第一表面的第二表面,以及在第一和第二表面之间延伸的通孔,第一和第二金属元件以及将第一和第二表面分离和绝缘的电容器介电层 至少在通孔内的金属元​​件彼此之间。 第一金属元件可以在第一表面暴露并且可以延伸到通孔中。 第二金属元件可以在第二表面处露出并且可以延伸到通孔中。 第一和第二金属元件可以电连接到第一和第二电位。 电容器介电层可以具有起伏的形状。

    Method of making rolling electrical contact to wafer front surface
    56.
    发明授权
    Method of making rolling electrical contact to wafer front surface 失效
    制造与晶片正面滚动电接触的方法

    公开(公告)号:US07491308B2

    公开(公告)日:2009-02-17

    申请号:US11123268

    申请日:2005-05-05

    Abstract: Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.

    Abstract translation: 可以通过包括第一和第二导电元件的特定装置来提供导电材料在包含导电材料的电解质的衬底的包括半导体晶片的表面上的基本均匀沉积。 第一导电元件可以具有相同或不同构造的多个电触点,或者可以是导电焊盘的形式,并且可以在基本上所有的衬底表面上与衬底表面接触或以其他方式电互连。 当在电解质与衬底表面和第二导电元件物理接触的同时在第一和第二导电元件之间施加电势时,导电材料沉积在衬底表面上。 可以使施加在阳极和阴极之间的电压的极性反转,从而可以对沉积的导电材料进行电蚀刻。

    Device providing electrical contact to the surface of a semiconductor workpiece during processing
    57.
    发明授权
    Device providing electrical contact to the surface of a semiconductor workpiece during processing 有权
    在处理过程中提供与半导体工件的表面的电接触的装置

    公开(公告)号:US07311811B2

    公开(公告)日:2007-12-25

    申请号:US10826219

    申请日:2004-04-16

    Abstract: Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.

    Abstract translation: 可以通过包括第一和第二导电元件的特定装置来提供导电材料在包含导电材料的电解质的衬底的包括半导体晶片的表面上的基本均匀沉积。 第一导电元件可以具有相同或不同构造的多个电触点,或者可以是导电焊盘的形式,并且可以在基本上所有的衬底表面上与衬底表面接触或以其他方式电互连。 当在电解质与衬底表面和第二导电元件物理接触的同时在第一和第二导电元件之间施加电势时,导电材料沉积在衬底表面上。 可以使施加在阳极和阴极之间的电压的极性反转,从而可以对沉积的导电材料进行电蚀刻。

    Method of forming contact layers on substrates
    58.
    发明申请
    Method of forming contact layers on substrates 有权
    在基片上形成接触层的方法

    公开(公告)号:US20070066054A1

    公开(公告)日:2007-03-22

    申请号:US11232718

    申请日:2005-09-21

    CPC classification number: H01L21/2885 C25D5/02 C25D7/123 C25D17/005

    Abstract: A method is provided for manufacturing removable contact structures on the surface of a substrate to conduct electricity from a contact member to the surface during electroprocessing. The method comprises forming a conductive layer on the surface. A predetermined region of the conductive layer is selectively coated by a contact layer so that the contact member touches the contact layer as the electroprocessing is performed on the conductive layer.

    Abstract translation: 提供了一种用于在基板的表面上制造可移除接触结构以在电加工期间将电从接触构件传导到表面的方法。 该方法包括在表面上形成导电层。 导电层的预定区域被接触层选择性地涂覆,使得当在导电层上进行电处理时,接触构件接触接触层。

    Method of making rolling electrical contact to wafer front surface
    59.
    发明申请
    Method of making rolling electrical contact to wafer front surface 失效
    制造与晶片正面滚动电接触的方法

    公开(公告)号:US20050269212A1

    公开(公告)日:2005-12-08

    申请号:US11123268

    申请日:2005-05-05

    Abstract: Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.

    Abstract translation: 可以通过包括第一和第二导电元件的特定装置来提供导电材料在包含导电材料的电解质的衬底的包括半导体晶片的表面上的基本均匀沉积。 第一导电元件可以具有相同或不同构造的多个电触点,或者可以是导电焊盘的形式,并且可以在基本上所有的衬底表面上与衬底表面接触或以其他方式电互连。 当在电解质与衬底表面和第二导电元件物理接触的同时在第一和第二导电元件之间施加电势时,导电材料沉积在衬底表面上。 可以使施加在阳极和阴极之间的电压的极性反转,从而可以对沉积的导电材料进行电蚀刻。

    Method and apparatus for avoiding particle accumulation in electrodeposition
    60.
    发明授权
    Method and apparatus for avoiding particle accumulation in electrodeposition 有权
    用于避免电沉积中的颗粒积聚的方法和装置

    公开(公告)号:US06932896B2

    公开(公告)日:2005-08-23

    申请号:US09982558

    申请日:2001-10-17

    Abstract: Systems and methods to remove or lessen the size of metal particles that have formed on, and to limit the rate at which metal particles form or grow on, workpiece surface influencing devices used during electrodeposition are presented. According to an exemplary method, the workpiece surface influencing device is occasionally placed in contact with a conditioning substrate coated with an inert material, and the bias applied to the electrodeposition system is reversed. According to another exemplary method, the workpiece surface influencing device is conditioned using mechanical contact members, such as brushes, and conditioning of the workpiece surface influencing device occurs, for example, through physical brushing of the workpiece surface influencing device with the brushes. According to a further exemplary method, the workpiece surface influencing device is rotated in different direction during electrodeposition.

    Abstract translation: 提出了用于去除或减小在电沉积期间使用的工件表面影响装置上形成金属颗粒的尺寸并限制金属颗粒形成或生长的速率的系统和方法。 根据示例性的方法,工件表面影响装置偶尔地与涂覆有惰性材料的调理基板接触,并且施加到电沉积系统的偏压被反转。 根据另一示例性方法,使用诸如刷子的机械接触构件对工件表面影响装置进行调节,并且例如通过用刷子物理刷刷工件表面影响装置来发生工件表面影响装置的调节。 根据另一示例性方法,在电沉积期间,工件表面影响装置在不同方向上旋转。

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