Apparatus for optical measurements of nitrogen concentration in thin films
    51.
    发明授权
    Apparatus for optical measurements of nitrogen concentration in thin films 有权
    用于光学测量薄膜中氮浓度的装置

    公开(公告)号:US06882421B2

    公开(公告)日:2005-04-19

    申请号:US10886111

    申请日:2004-07-07

    CPC classification number: G01N21/211 G01N21/8422 G01N25/72

    Abstract: Systems and methods are disclosed for evaluating nitrogen levels in thin gate dielectric layers formed on semiconductor samples. In one embodiment, a tool is disclosed which includes both a narrow band ellipsometer and a broadband spectrometer for measuring the sample. The narrowband ellipsometer provides very accurate information about the thickness of the thin film layer while the broadband spectrometer contains information about the nitrogen levels. In another aspect of the subject invention, a thermal and/or plasma wave detection system is used to provide information about the nitrogen levels and nitration processes.

    Abstract translation: 公开了用于评估在半导体样品上形成的薄栅介质层中的氮含量的系统和方法。 在一个实施例中,公开了一种工具,其包括窄带椭偏仪和用于测量样品的宽带光谱仪。 窄带椭偏仪提供关于薄膜层的厚度的非常准确的信息,而宽带光谱仪包含关于氮水平的信息。 在本发明的另一方面,使用热和/或等离子体波检测系统来提供关于氮水平和硝化过程的信息。

    Photothermal system with spectroscopic pump and probe
    52.
    发明申请
    Photothermal system with spectroscopic pump and probe 有权
    带光谱泵和探头的光热系统

    公开(公告)号:US20050062971A1

    公开(公告)日:2005-03-24

    申请号:US10947925

    申请日:2004-09-23

    CPC classification number: G01N21/9501 G01N21/1717 G01N21/636

    Abstract: The ability of a Modulated Optical Reflectivity (MOR) or Thermal Wave (TW) system to measure characteristics of a sample based on the amplitude and phase of a probe beam reflected from the surface of the sample can be improved by providing a polychromatic pump and/or probe beam that can be scanned over a wide spectral range, such as a range of at least 100 nm. The information contained in the spectral dependencies of a TW response obtained from the sample can be compared and/or fitted to corresponding theoretical dependencies in order to obtain more precise and reliable information about the properties of the particular sample than is available for single-wavelength systems. This information can further be combined with measurements taken for varying spot separations or varying pump source modulation frequency, as well as with photo-thermal radiometry (PTR), spectroscopic reflectometry, and/or ellipsometry measurements.

    Abstract translation: 基于从样品表面反射的探针光束的幅度和相位,调制光学反射率(MOR)或热波(TW)系统测量样品的特性的能力可以通过提供多色泵和/ 或可以在宽光谱范围(例如至少100nm的范围)上扫描的探测光束。 包含在从样本获得的TW响应的频谱相关性中的信息可以与相应的理论依赖性进行比较和/或拟合,以获得关于特定样品的性质的更精确和可靠的信息,而不是可用于单波长系统 。 该信息可以进一步与用于变化的点分离或变化的泵浦源调制频率以及光热辐射测量(PTR),光谱反射测量和/或椭偏仪测量的测量结合。

    Apparatus for evaluating metalized layers on semiconductors
    53.
    发明授权
    Apparatus for evaluating metalized layers on semiconductors 有权
    用于评估半导体上的金属化层的装置

    公开(公告)号:US06836338B2

    公开(公告)日:2004-12-28

    申请号:US10342027

    申请日:2003-01-14

    Applicant: Jon Opsal Li Chen

    Inventor: Jon Opsal Li Chen

    CPC classification number: G01N21/211 G01N21/1717

    Abstract: An apparatus for characterizing multilayer samples is disclosed. An intensity modulated pump beam is focused onto the sample surface to periodically excite the sample. A probe beam is focused onto the sample surface within the periodically excited area. The power of the reflected probe beam is measured by a photodetector. The output of the photodetector is filtered and processed to derive the modulated optical reflectivity of the sample. Measurements are taken at a plurality of pump beam modulation frequencies. In addition, measurements are taken as the lateral separation between the pump and probe beam spots on the sample surface is varied. The measurements at multiple modulation frequencies and at different lateral beam spot spacings are used to help characterize complex multilayer samples. In the preferred embodiment, a spectrometer is also included to provide additional data for characterizing the sample.

    Abstract translation: 公开了一种用于表征多层样品的装置。 将强度调制的泵浦光束聚焦到样品表面上以周期性地激发样品。 探针光束聚焦在周期性激发区域内的样品表面上。 反射探测光束的光束由光电检测器测量。 对光电检测器的输出进行滤波和处理,以得出样品的调制光学反射率。 在多个泵浦光束调制频率下进行测量。 此外,测量取决于泵和探针之间的横向分离,样品表面上的光斑变化。 使用多个调制频率和不同横向光斑间距的测量来帮助表征复杂的多层样品。 在优选实施例中,还包括光谱仪以提供用于表征样品的附加数据。

    Real time analysis of periodic structures on semiconductors
    55.
    发明授权
    Real time analysis of periodic structures on semiconductors 有权
    半导体周期性结构的实时分析

    公开(公告)号:US06778911B2

    公开(公告)日:2004-08-17

    申请号:US10405541

    申请日:2003-04-02

    Abstract: A system for characterizing periodic structures on a real time basis is disclosed. A multi-parameter measurement module generates output signals as a function of wavelength or angle of incidence. The output signals are supplied to a parallel processor, which creates an initial theoretical model and calculates the theoretical optical response. The calculated optical response is compared to measured values. Based on the comparison, the model configuration is modified to be closer to the actual measured structure. Thereafter, the complexity of the model is iteratively increased, by dividing the model into layers each having an associated width and height. The model is fit to the data in an iterative manner until a best fit model is obtained which is similar in structure to the periodic structure.

    Abstract translation: 公开了一种用于实时表征周期性结构的系统。 多参数测量模块产生作为波长或入射角的函数的输出信号。 输出信号被提供给并行处理器,其产生初始理论模型并计算理论光学响应。 将计算出的光学响应与测量值进行比较。 基于比较,模型配置被修改为更接近实际的测量结构。 此后,通过将模型分为各自具有相关联的宽度和高度的层,迭代地增加了模型的复杂性。 该模型以迭代方式适合于数据,直到获得与结构相似的周期结构相似的最佳拟合模型。

    Thin film optical measurement system and method with calibrating ellipsometer
    56.
    发明授权
    Thin film optical measurement system and method with calibrating ellipsometer 有权
    薄膜光学测量系统和校准椭偏仪的方法

    公开(公告)号:US06753962B2

    公开(公告)日:2004-06-22

    申请号:US10320907

    申请日:2002-12-17

    CPC classification number: G01B11/0641 G01J4/00 G01N21/211

    Abstract: An optical measurement system for evaluating a reference sample that has at least a partially known composition. The optical measurement system includes a reference ellipsometer and at least one non-contact optical measurement device. The reference ellipsometer includes a light generator, an analyzer and a detector. The light generator generates a beam of quasi-monochromatic light having a known wavelength and a known polarization for interacting with the reference sample. The beam is directed at a non-normal angle of incidence relative to the reference sample to interact with the reference sample. The analyzer creates interference between the S and P polarized components in the light beam after the light beam has interacted with reference sample. The detector measures the intensity of the light beam after it has passed through the analyzer. A processor determines the polarization state of the light beam entering the analyzer from the intensity measured by the detector, and determines an optical property of the reference sample based upon the determined polarization state, the known wavelength of light from the light generator and the composition of the reference sample. The processor also operates the optical measurement device to measure an optical parameter of the reference sample. The processor calibrates the optical measurement device by comparing the measured optical parameter from the optical measurement device to the determined optical property from the reference ellipsometer.

    Abstract translation: 一种用于评估至少具有部分已知组成的参考样品的光学测量系统。 光学测量系统包括参考椭偏仪和至少一个非接触式光学测量装置。 参考椭偏仪包括光发生器,分析器和检测器。 光发生器产生具有已知波长和已知极化的准单色光束,用于与参考样品相互作用。 光束相对于参考样品被引导到非正常入射角,以与参考样品相互作用。 在光束与参考样本相互作用后,分析仪在光束中产生S和P偏振分量之间的干扰。 检测器测量光束通过分析仪后的强度。 处理器根据由检测器测量的强度确定进入分析器的光束的偏振状态,并且基于所确定的偏振状态,来自光发生器的已知的光的波长以及来自光发生器的光的组成,确定参考样品的光学特性 参考样品。 处理器还操作光学测量装置以测量参考样品的光学参数。 处理器通过将来自光学测量装置的测量光学参数与来自参考椭偏仪的所确定的光学特性进行比较来校准光学测量装置。

    Combination thermal wave and optical spectroscopy measurement systems
    57.
    发明授权
    Combination thermal wave and optical spectroscopy measurement systems 失效
    组合热波和光谱测量系统

    公开(公告)号:US06671047B2

    公开(公告)日:2003-12-30

    申请号:US10346389

    申请日:2003-01-17

    CPC classification number: G01N21/1717 G01N21/211

    Abstract: A combination metrology tool is disclosed which is capable of obtaining both thermal wave and optical spectroscopy measurements on a semiconductor wafer. In a preferred embodiment, the principal combination includes a thermal wave measurement and a spectroscopic ellipsometric measurement. These measurements are used to characterize ion implantation processes in semiconductors over a large dosage range.

    Abstract translation: 公开了一种能够在半导体晶片上获得热波和光谱测量的组合计量工具。 在优选实施例中,主要组合包括热波测量和光谱椭偏测量。 这些测量用于表征在大剂量范围内的半导体中的离子注入过程。

    Thin film optical measurement system and method with calibrating ellipsometer

    公开(公告)号:US06515746B2

    公开(公告)日:2003-02-04

    申请号:US10138984

    申请日:2002-05-03

    CPC classification number: G01B11/0641 G01J4/00 G01N21/211

    Abstract: An optical measurement system for evaluating a reference sample that has at least a partially known composition. The optical measurement system includes a reference ellipsometer and at least one non-contact optical measurement device. The reference ellipsometer includes a light generator, an analyzer and a detector. The light generator generates a beam of quasi-monochromatic light having a known wavelength and a known polarization for interacting with the reference sample. The beam is directed at a non-normal angle of incidence relative to the reference sample to interact with the reference sample. The analyzer creates interference between the S and P polarized components in the light beam after the light beam has interacted with reference sample. The detector measures the intensity of the light beam after it has passed through the analyzer. A processor determines the polarization state of the light beam entering the analyzer from the intensity measured by the detector, and determines an optical property of the reference sample based upon the determined polarization state, the known wavelength of light from the light generator and the composition of the reference sample. The processor also operates the optical measurement device to measure an optical parameter of the reference sample. The processor calibrates the optical measurement device by comparing the measured optical parameter from the optical measurement device to the determined optical property from the reference ellipsometer.

    Apparatus for analyzing multi-layer thin film stacks on semiconductors

    公开(公告)号:US06297880B1

    公开(公告)日:2001-10-02

    申请号:US09563152

    申请日:2000-05-02

    CPC classification number: G01B11/0641

    Abstract: An optical measurement system is disclosed for evaluating samples with multi-layer thin film stacks. The optical measurement system includes a reference ellipsometer and one or more non-contact optical measurement devices. The reference ellipsometer is used to calibrate the other optical measurement devices. Once calibration is completed, the system can be used to analyze multi-layer thin film stacks. In particular, the reference ellipsometer provides a measurement which can be used to determine the total optical thickness of the stack. Using that information coupled with the measurements made by the other optical measurement devices, more accurate information about individual layers can be obtained.

    Spatial averaging technique for ellipsometry and reflectometry
    60.
    发明授权
    Spatial averaging technique for ellipsometry and reflectometry 有权
    用于椭圆偏振和反射测量的空间平均技术

    公开(公告)号:US06281027B1

    公开(公告)日:2001-08-28

    申请号:US09658812

    申请日:2000-09-11

    CPC classification number: G01N21/211 G01B11/065 G01N21/9501 H01L22/12

    Abstract: This invention relates to ellipsometry and reflectometry optical metrology tools that are used to evaluate semiconductor wafers and is directed to reducing errors associated with material surrounding a desired measurement area or pad, either by minimizing the uncertainties in positioning the measurement beam or by taking into account the effects of the surrounding material in analyzing the measured data. One aspect the present invention utilizes a technique where initially one purposefully aims to place the optical spot of the measurement beam a few microns away from the center of the target pad. Then a series of measurements are made with each measurement separated by a small stage jog as the optical spot is scanned over the measurement pad. Provided the surrounding material is the same on both sides of the pad, one finds that the data invariably has either a cup or inverted “U” shape or an inverted cup or “U” shape when viewed as a function of position. The minimum or maximum of the curve is then used to identify the center of the pad. Another aspect the present invention makes use of a novel method of data analysis that allows for the correction of the effects of the surrounding material in analyzing the data. In essence, the data collected at the center of the pad is treated as being created by a superposition of light coming from the pad material itself and light coming from the surrounding material. The influence of the two materials is weighted by the proportion of the light that reflects off the pad as compared with the light that reflects off of the surrounding material. Given knowledge of both the dimensions of the pad and the size and profile of the beam spot, the resulting signal may be mathematically modeled according to the present invention to account for both the contribution of the light reflected from the pad and the light reflected from the surrounding material.

    Abstract translation: 本发明涉及用于评估半导体晶片的椭偏仪和反射光学测量工具,并且旨在通过最小化定位测量光束的不确定性或通过考虑到测量光束的位置来减少与期望的测量区域或焊盘周围的材料相关的误差 周围材料在测量数据分析中的作用。 本发明的一个方面利用一种技术,其中最初一个目的是将测量光束的光点远离目标焊盘的中心几微米。 然后,通过在测量垫上扫描光点,通过小阶段点动分离每个测量进行一系列测量。 如果周围的材料在垫的两侧是相同的,那么可以发现当视为位置的函数时,数据总是具有杯状或倒置的“U”形或倒杯或“U”形。 然后使用曲线的最小或最大值来识别垫的中心。 本发明的另一方面利用了一种新的数据分析方法,其允许在分析数据时校正周围材料的影响。 实质上,在垫的中心处收集的数据被视为由来自垫材料本身的光和来自周围材料的光的叠加而产生的。 与从周围材料反射的光相比,两种材料的影响被反射离开焊盘的光的比例加权。 考虑到焊盘的尺寸和光束点的尺寸和轮廓两者的知识,可以根据本发明对所得到的信号进行数学建模,以考虑从焊盘反射的光的贡献和从焊盘反射的光的贡献 周边材料。

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